# Power MOSFET, N Channel, 650 V, 7.3 A, 0.54 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2443411RL/)

**URL**: https://novapart.co/products/SPB07N60C3ATMA1/power-mosfet-n-channel-650-v-73-a-054-ohm-to-263
**SKU**: SPB07N60C3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9050
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 83W |
| Drain Source On State Resistance | 0.54ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443411RL/)

**SPB07N60C3** 

## **Cool MOS™ Power Transistor** 

## **Feature** 

- New revolutionary high voltage technology 

|_V_DS _@ T_jmax|650|V|
|---|---|---|
|jmax<br>_R_DS(on)|0.6|Ω|
|_I_D|7.3|A|



- Ultra low gate charge 

- Periodic avalanche rated 

## PG-TO263 

- Extreme d _v_ /d _t_ rated 

- High peak current capability 

- Improved transconductance 

|**Type**|**Package**|**Ordering Code**|**Marking**|
|---|---|---|---|
|SPB07N60C3|PG-TO263|Q67040-S4394|07N60C3|



|**Parameter**<br>/|**Symbol**<br>/|**Value**<br>**SPB**<br>a<br>/|**Value**<br>**SPB**<br>a<br>/|**Unit**<br>a|
|---|---|---|---|---|
|||**SPB**<br>/|||
|Continuous drain current<br>_T_C= 25 °C<br>_T_C= 100 °C<br>/|_I_D<br>/|7.3<br>4.6<br>/|/|A|
|Pulsed drain current,_t_plimited by_T_jmax<br>_|_I_D puls<br>_|21.9<br>_|_|A|
|pjmax<br>Avalanche energy, single pulse<br>_I_D=5.5A,_V_DD=50V<br>_|D puls<br>_E_AS<br>_<br>||230<br>_<br>||_|mJ|
|Avalanche energy, repetitive_t_ARlimited by_T_jmax2)<br>_I_D=7.3A,_V_DD=50V<br>_|_E_AR<br>_|0.5<br>_|||
|Avalanche current, repetitive_t_ARlimited by_T_jmax|_I_AR<br>a|7.3||A|
|jmax<br>Gate source voltage static|_V_GS<br>a|±20<br> a||V|
|Gate source voltage AC (f >1Hz)|_V_GS<br>es|±30<br>es|es||
|Power dissipation,_T_C= 25°C|_P_tot<br>aa|83<br>aa|aa|W|
|Operatingand storage temperature|_T_j ,_T_stg<br>a|-55...+150<br>a||°C|
|Reverse diode dv/dt                                                     dv/dt                15                           V/ns<br>6)|j ,stg<br>Reverse diode dv/dt                                                     dv/dt                15                           V/ns<br>~~a~~|Reverse diode dv/dt                                                     dv/dt                15                           V/ns<br>~~a~~|Reverse diode dv/dt                                                     dv/dt                15                           V/ns|Reverse diode dv/dt                                                     dv/dt                15                           V/ns|



2005-09-14 

Rev. 2.5 

Page 1 

**SPB07N60C3** 

|**Maximum Ratings**|**Maximum Ratings**|||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|||**Unit**|
|Drain Source voltage slope<br>_V_DS= 480 V,_I_D= 7.3 A,_T_j= 125 °C|d_v_/d_t_|50|||V/ns|
|**Thermal Characteristics**||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|Thermal resistance, junction - case|_R_thJC|-|-|1.5|K/W|
|Thermal resistance, junction - case, FullPAK|_R_thJCFP|-|-|3.9||
|Thermal resistance, junction - ambient, leaded|_<br>_R_thJA|-|-|62||
|Thermal resistance, junction - ambient, FullPAK|_R_thJAFP|-|-|80||
|SMD version, device on PCB:<br>@ min. footprint<br>@ 6 cm2cooling area3)|_<br>_R_thJA|-<br>-|-<br>35|62<br>-||
|Soldering temperature,reflow soldering, MSL1<br>1.6 mm(0.063 in.)from case for 10s|_T_sold|-|-|260|°C|



## **Electrical Characteristics,** at _T_ =25°C unless otherwise specified j 

|**Parameter**|**Symbol**|**Conditions**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0V,_I_D=0.25mA|600|-|-|V|
|Drain-Source avalanche<br>breakdown voltage|_V_(BR)DS|_V_GS=0V,_I_D=7.3A|-|700|-||
|Gate threshold voltage|_V_GS(th)|_I_D=350µA,_V_GS=VDS|2.1|3|3.9||
|Zero gate voltage drain current|_I_DSS|_V_DS=600V,_V_GS=0V,<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.5<br>-|1<br>100|µA|
|Gate-source leakage current|_I_GSS|_V_GS=30V,_V_DS=0V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=10V,_I_D=4.6A<br>_T_j=25°C<br>_T_j=150°C|-<br>-|0.54<br>1.46|0.6<br>-|Ω|
|Gate input resistance|_R_G|_f_=1MHz, open drain|-|0.8|-||



2005-09-14 

Rev. 2.5 

Page 2 

**SPB07N60C3** 

## **Electrical Characteristics** , at _T_ j = 25 °C, unless otherwise specified 

|**Parameter**|**Symbol**|**Conditions**||**Values**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Characteristics**|||||||
|Transconductance|_g_fs|_V_DS≥2*_I_D*_R_DS(on)max,|-|6|-|S|
|||_I_D=4.6A|||||
|Input capacitance|_C_iss|_V_GS=0V,_V_DS=25V,|-|790|-|pF|
|Output capacitance|_C_oss|_f_=1MHz|-|260|-||
|Reverse transfer capacitance|_C_rss||-|16|-||
|Effective output capacitance,4)|_C_o(er)|_V_GS=0V,|-|30|-||
|energy related||_V_DS=0V to 480V|||||
|Effective output capacitance,5)|_C_o(tr)||-|55|-||
|time related|||||||
|Turn-on delay time|_t_d(on)|_V_DD=380V,_V_GS=0/13V,|-|6|-|ns|
|Rise time|_t_r|_I_D=7.3A,_R_G=12Ω,|-|3.5|-||
|Turn-off delay time|_t_d(off)|_T_j=125°C|-|60|100||
|Fall time|_t_f||-|7|15||
|**Gate Charge Characteristics**|||||||
|Gate to source charge|_Q_gs|_V_DD=480V,_I_D=7.3A|-|3|-|nC|
|Gate to drain charge|_Q_gd||-|9.2|-||
|Gate charge total|_Q_g|_V_DD=480V,_I_D=7.3A,|-|21|27||
|||_V_GS=0 to 10V|||||
|Gateplateau voltage|_V_(plateau)|_V_DD=480V,_I_D=7.3A|-|5.5|-|V|



1Limited only by maximum temperature 

2Repetitve avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR* _f_ . 

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

4 _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

5 _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

6 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. 

Identical low-side and high-side switch. 

2005-09-14 

Rev. 2.5 

Page 3 

**SPB07N60C3** 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|Inverse diode continuous<br>forward current|_I_S|_T_C=25°C|-|-|7.3|A|
|Inverse diode direct current,<br>pulsed|_I_SM||-|-|21.9||
|Inverse diode forward voltage|_V_SD|_V_GS=0V,_I_F=_I_S|-|1|1.2|V|
|Reverse recovery time|_t_rr|_V_R=480V,_I_F=_I_S,<br>d_i_F/d_t_=100A/µs|-|400|600|ns|
|Reverse recoverycharge|_Q_rr||-|4|-|µC|
|Peak reverse recoverycurrent|_I_rrm||-|28|-|A|
|Peak rate of fall of reverse<br>recoverycurrent|_di_rr_/dt_|_T_j=25°C|-|800|-|A/µs|



## **Typical Transient Thermal Characteristics** 

|**Symbol**||**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|**Unit**|||**Symbol**|**Symbol**|**Symbol**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||**SPB**||||||||||||||**SPB**|||||
|_R_th1||0.024|||||||K/W||||_C_th1|||0.00012||||Ws/K|
|_R_th2||0.046|||||||||||_C_th2|||0.0004578|||||
|_R_th3||0.085|||||||||||_C_th3|||0.000645|||||
|_R_th4||0.308|||||||||||_C_th4|||0.001867|||||
|_R_th5||0.317|||||||||||_C_th5|||0.004795|||||
|_R_th6||0.112|||||||||||_C_th6|||0.045|||||
|||Ptot(t)|||||||||||External Heatsink<br>**Tcase**<br>**Tamb**<br>Rth,n<br>Cth,n||||||||
||||Ptot(t)||**Tj**<br>Cth1<br>Cth2<br>Rth1||||||||Rth,n||||||||
||||||||||||||||||||||
||||||||||||||Cth,n||||||||
||||||||||||||||||||||
||||||||||||||||||||||



2005-09-14 

Rev. 2.5 

Page 4 

**SPB07N60C3** 

## **1 Power dissipation** 

## _P_ tot = _f_ ( _T_ C) 

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SPP07N60C3<br>100<br>W<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

## _I_ D = _f_ ( _V_ DS ) 

parameter : _D_ = 0 , _T_ C=25°C 

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10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>tp = 0.01 ms<br>10 -1 tp = 0.1 ms<br>tp = 1 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


## **2 Power dissipation FullPAK** 

## _P_ tot = _f_ ( _T_ C) 

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34<br>W<br>28<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>0 20 40 60 80 100 120 °C 160<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **4 Safe operating area FullPAK** 

## _I_ D = _f_ ( _V_ DS) 

## parameter: _D_ = 0, _T_ C = 25°C 

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10 2<br> A<br>10 1<br>10 0<br>tp = 0.001 ms<br>10 -1 tp = 0.01 ms<br>tp = 0.1 ms<br>tp = 1 ms<br>tp = 10 ms<br>DC<br>10 -2<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>V DS<br>I D<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 5 

**SPB07N60C3** 

## **5 Transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

parameter: _D_ = _t_ p/ _T_ 

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10 1<br> K/W<br>10 0<br>10 -1<br>D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>10 -2 D = 0.01<br>single pulse<br>10 -3<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3]  s 10 [-1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **7 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 10 µs, _V_ GS 

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24<br>20V<br> A 10V<br>8V 7V<br>16 6,5V<br>12 6V<br>8 5,5V<br>5V<br>4<br>4,5V<br>0<br>0 5 10 15 V DS 25<br> V<br>I D<br>**----- End of picture text -----**<br>


## **6 Transient thermal impedance FullPAK** 

_Z_ thJC = _f_ ( _t_ p) parameter: _D_ = _t_ p/ _t_ 

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10 1<br> K/W<br>10 0<br>10 -1<br>D = 0.5<br>D = 0.2<br>D = 0.1<br>D = 0.05<br>10 -2 D = 0.02<br>D = 0.01<br>single pulse<br>10 -3<br>10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]  s 10 [1]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **8 Typ. output characteristic** 

_I_ D = _f_ ( _V_ DS); _T_ j=150°C parameter: _t_ p = 10 µs, _V_ GS 

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13<br> A<br>20V<br>8V<br>11 6.5V<br>6V<br>10<br>9<br>8<br>5.5V<br>7<br>6<br>5 5V<br>4<br>3 4.5V<br>2<br>4V<br>1<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 V 25<br>V DS<br>I D<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 6 

**SPB07N60C3** 

## **9 Typ. drain-source on resistance** 

_R_ DS(on)= _f_ ( _I_ D) 

## parameter: _T_ j=150°C, _V_ GS 

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10<br>Ω 4V<br>4.5V<br>8<br>7<br>5V<br>6<br>6V<br>5<br>6.5V<br>8V<br>4 5.5V 20V<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12  A 15<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. transfer characteristics** 

_I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _t_ p = 10 µs 

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24<br> A<br>20 25°C<br>18<br>16<br>14<br>150°C<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16  V 20<br>V GS<br>I D<br>**----- End of picture text -----**<br>


## **10 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = 4.6 A, _V_ GS = 10 V 

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SPP07N60C3<br>3.4<br>Ω<br>2.8<br>2.4<br>2<br>1.6<br>1.2<br>0.8 98%<br>typ<br>0.4<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **12 Typ. gate charge** 

_V_ GS = _f_ ( _Q_ Gate) 

## parameter: _I_ D = 7.3 A pulsed 

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SPP07N60C3<br>16<br>V<br>12<br>0,2 V DS max<br>10 0,8 V DS max<br>8<br>6<br>4<br>2<br>0<br>0 4 8 12 16 20 24 28 nC 34<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 7 

**SPB07N60C3** 

## **13 Forward characteristics of body diode** 

_I_ F = _f_ (VSD) 

parameter: _T_ j , tp = 10 µs 

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10 2 SPP07N60C3<br>A<br>10 1<br>10 0<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -1<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F<br>**----- End of picture text -----**<br>


## **15 Typ. switching time** 

_t_ = _f_ ( _R_ G), inductive load, _T_ j=125°C 

par.: _V_ DS=380V, _V_ GS=0/+13V, _I_ D=7.3 A 

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500<br> ns<br>400<br>350<br>300<br>250 td(off)<br>200<br>150<br>td(on)<br>tf<br>100<br>tr<br>50<br>0<br>0 20 40 60 80 100 Ω 130<br>R G<br>t<br>**----- End of picture text -----**<br>


## **14 Typ. switching time** 

_t_ = _f_ ( _I_ D), inductive load, _T_ j=125°C 

par.: _V_ DS=380V, _V_ GS=0/+13V, _R_ G=12Ω 

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90<br> ns<br>td(off)<br>70<br>60<br>50<br>40<br>30<br>tf<br>td(on)<br>20 tr<br>10<br>0<br>0 1 2 3 4 5 6  A 8<br>I D<br>t<br>**----- End of picture text -----**<br>


## **16 Typ. drain current slope** 

d _i_ /d _t_ = f( _R_ G), inductive load, _T_ j = 125°C 

par.: _V_ DS=380V, _V_ GS=0/+13V, _I_ D=7.3A 

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3000<br> A/µs<br>2000<br>1500<br>di/dt(on)<br>1000<br>500<br>di/dt(off)<br>0<br>0 20 40 60 80 100 Ω 130<br>R G<br>/d i d t<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 8 

**SPB07N60C3** 

## **17 Typ. drain source voltage slope** 

d _v_ /d _t_ = f( _R_ G), inductive load, _T_ j = 125°C par.: _V_ DS=380V, _V_ GS=0/+13V, _I_ D=7.3A 

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100<br> V/ns<br>80<br>70<br>60<br>50<br>dv/dt(on)<br>40<br>30<br>20<br>dv/dt(off)<br>10<br>0<br>0 20 40 60 80 Ω 120<br>R G<br>/d t<br>v<br>d<br>**----- End of picture text -----**<br>


## **19 Typ. switching losses** 

_E_ = _f_ ( _R_ G), inductive load, _T_ j=125°C 

par.: _V_ DS=380V, _V_ GS=0/+13V, _I_ D=7.3A 

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0.2<br>*) Eon includes SDP06S60<br> mWs    diode commutation losses.<br>0.16<br>0.14<br>0.12<br>0.1<br>Eoff<br>0.08<br>0.06<br>Eon*<br>0.04<br>0.02<br>0<br>0 20 40 60 80 100 Ω 130<br>R G<br>E<br>**----- End of picture text -----**<br>


## **18 Typ. switching losses** 

_E_ = _f_ ( _I_ D), inductive load, _T_ j=125°C par.: _V_ DS=380V, _V_ GS=0/+13V, _R_ G=12Ω 

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**----- Start of picture text -----**<br>
0.025<br>*) Eon includes SDP06S60<br>   diode commutation losses.<br> mWs<br>0.015<br>0.01 Eoff<br>0.005<br>Eon*<br>0<br>0 1 2 3 4 5 6  A 8<br>I D<br>E<br>**----- End of picture text -----**<br>


## **20 Avalanche SOA** 

_I_ AR = _f_ ( _t_ AR) 

par.: _T_ j ≤ 150 °C 

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**----- Start of picture text -----**<br>
8<br> A<br>T j(START)=25°C<br>6<br>5<br>T j(START)=125°C<br>4<br>3<br>2<br>1<br>010 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]  µs 10 [4]<br>t AR<br>I AR<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 9 

**SPB07N60C3** 

## **21 Avalanche energy** 

## _E_ AS = _f_ ( _T_ j) 

## **22 Drain-source breakdown voltage** 

_V_ (BR)DSS = _f_ ( _T_ j) 

par.: _I_ D = 5.5 A, _V_ DD = 50 V 

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260<br>mJ<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>20 40 60 80 100 120 °C 160<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br>


## **23 Avalanche power losses** 

## _P_ AR = _f_ ( _f_ ) 

## parameter: _E_ AR=0.5mJ 

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**----- Start of picture text -----**<br>
500<br> W<br>300<br>200<br>100<br>010 [4] 10 [5]  MHz 10 [6]<br>f<br>AR<br>P<br>**----- End of picture text -----**<br>


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SPP07N60C3<br>720<br>V<br>680<br>660<br>640<br>620<br>600<br>580<br>560<br>540<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


## **24 Typ. capacitances** 

_C_ = _f_ ( _V_ DS) 

parameter: _V_ GS=0V, _f_ =1 MHz 

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**----- Start of picture text -----**<br>
10 4<br> pF<br>C iss<br>10 3<br>10 2<br>C oss<br>10 1<br>C rss<br>10 0<br>0 100 200 300 400  V 600<br>V DS<br>C<br>**----- End of picture text -----**<br>


2005-09-14 

Rev. 2.5 

Page 10 

**SPB07N60C3** 

## **25 Typ.** _C_ oss **stored energy** 

_E_ oss= _f_ ( _V_ DS) 

**==> picture [226 x 260] intentionally omitted <==**

**----- Start of picture text -----**<br>
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## Definition of diodes switching characteristics 

2005-09-14 

Rev. 2.5 

Page 11 

**SPB07N60C3** 

## PG-TO263-3- 2 / PG-TO263-3-5/ PG-TO263-3-22 

2005-09-14 

Rev. 2.5 

Page 12 

**SPB07N60C3** 

## **Published by Infineon Technologies AG 81726 München Germany** 

## **© Infineon Technologies AG 2006 All Rights Reserved.** 

## **Attention please!** 

The information herein is given to describe certain components and shall not be considered as warranted characteristics. 

Terms of delivery and rights to technical change reserved. 

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. 

Infineon Technologies is an approved CECC manufacturer. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems  with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2005-09-14 

Rev. 2.5 

Page 13 



## Links

- [View this product on Novapart](https://novapart.co/products/SPB07N60C3ATMA1/power-mosfet-n-channel-650-v-73-a-054-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/spb07n60c3atma1/mosfet-n-ch-650v-7-3a-to-263-3/dp/2443411RL)
---

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