# Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1156420/)

**URL**: https://novapart.co/products/SPA20N60C3XKSA1/power-mosfet-n-channel-650-v-207-a-019-ohm-to
**SKU**: SPA20N60C3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4200
**Stock**: 200+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 34.5W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20.7A |
| Drain Source On State Resistance | 0.19ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1156420/)

Cool MOS™ Power Transistor 

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- 

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_T_ C _T_ C Pulsed drain current, _t_ p limited by _T_ jmax A Avalanche energy, single pulse Eas mJ _V_ DD Avalanche energy, repetitive tap limited by _T_ jmax 2) _E_ AR 1 1 _V_ DD Avalanche current, repetitive tar limited by _T_ jmax A Gate source voltage static | _V_ GS 20 | a20 lv Gate source voltage AC (f >1Hz) | _V_ GS | 30 ± «| ± 30 Power dissipation, _T_ C = 25°C | _P_ tot 208 | 34.5 |W Operating and storage temperature °C Reverse diode dv/dt                                                      dv/dt                        15                   V/ns7) a 

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|Thermal Characteristics||||||
|---|---|---|---|---|---|
|Parameter<br>Thermalresistance, junction-case|_min.<br>ee||typ.|max.||||Unit<br>K/W|
|||_min.<br>|<br>ee|_min.<br>|typ.|<br>ee|_min.<br>|max.|<br>ee||
|Thermalresistance, junction-case<br>Thermalresistance, junction-case,FullPAK<br>Rnic|_R_thJC<br>ee<br>Rnicrel||<br>ee<br>rel-||| typ. |<br>ee<br>|-||| max.|<br>ee<br>|36||K/W|
|Thermal resistance, junction -case<br>Thermalresistance, junction-case,FullPAK<br>Rnic<br>Thermalresistance,junction-ambient,leaded<br>||ee<br>Rnicrel<br>|<br>fe|ee <br>rel-|<br>fefe|ee<br>|-|<br>fe||ee <br>|36|<br>|62|||
|Thermal resistance, junction -case, FullPAK<br>Rnic<br>Thermalresistance,junction-ambient,leaded<br>|<br>Thermalresistance, junction-ambient,FullPAK<br>Rn|_R_thJA<br>Rnicrel<br>|<br>fe<br>Rnep]|rel - |<br>fefe<br>ep]-||| - |<br>fe|<br>|-||| 36 |<br>|62|<br>|80|||
|Thermal resistance, junction -ambient, leaded<br>|<br>Thermalresistance, junction-ambient,FullPAK<br>Rn<br>@6cm?coolingarea3)<br>mel)||<br>fe<br>Rnep]<br>mel)|fe fe<br>ep]-|<br>mel)|fe |<br>|-|<br>mel)le|| 62 |<br>|80|<br>le||
|Thermal resistance, junction -ambient, FullPAK<br>Rn<br>SMD version, device on PCB:<br>@ min. footprint<br>@6cm?coolingarea3)<br>mel)<br>1.6mm(0.063in.)fromcasefor10s4)<br>few|Rn ep]<br>RinJA<br>mel)<br>fewJo|ep] - |<br>mel)<br>Jo|| - |<br>-<br>mel)le<br>>||| 80 |<br>62<br>le<br>|200||
|wavesoldering<br>@6cm?coolingarea3)<br>mel)<br>Soldering temperature,<br>1.6mm(0.063in.)fromcasefor10s4)<br>few|mel)<br>Tsold<br>fewJo|mel)<br>Jo|mel) le<br>>||le<br>260 |<br>|200||°C|



|Parameter<br>[Symbol]<br>Drain-sourcebreakdownvoltage||[Symbol]<br>|<br>||[Symbol]Condivons|<br>=0v,fp20.25ma|||___Vaues—_Unit<br>|typ.|max.|||___Vaues—_Unit<br>|typ.|max.|||___Vaues—_Unit<br>|typ.|max.||Unit<br>_min.<br>|<br>|V|
|---|---|---|---|---|---|---|
|||||___Vaues<br>_min.<br>|<br>=0v,fp20.25ma|600||___Vaues—_<br>_min.<br>|typ.|<br>|-||—_Unit<br>_min.<br>|max.|<br>|-|||
|Parameter<br>[Symbol]<br>Drain-sourcebreakdownvoltage|<br>Drain-Sourceavalanche<br>Memos)|_V_(BR)DSS<br>[Symbol]<br>|<br>|<br>Memos)|_V_GS<br>[Symbol] Condivons |<br>=0v,fp20.25ma|<br>Memos)mevoaon||___Vaues<br>|<br>=0v,fp20.25ma|600|<br>=||___Vaues—_<br>| typ. |<br>|-|<br>|ToT|—_Unit<br>| max.|<br>|-|<br>ToT|Unit<br>|<br>|V|
|Drain-sourcebreakdown voltage |<br>Drain-Sourceavalanche<br>Memos)<br>breakdown voltage||<br>|<br>Memos)|_V_GS<br>=0v,fp20.25ma|<br>Memos)mevoaon|=0v,fp20.25ma| 600 |<br>=||| - |<br>|ToT|| - |<br>ToT||
|Drain-Sourceavalanche<br>Memos)<br>Gate threshold voltage|Memos)|µ<br>Memos) mevoaon|= ||| ToT|ToT||
|Zero gate voltage drain current<br>|<br>Gate-sourceleakagecurrent<br>‘igss||/pss<br>BEA<br>‘igss||_V_DS<br>_V_GS<br>_T_j<br>_T_j<br>=600V,<br>=OV,<br>=25°C<br>BEA<br>|=30v,=ov||BEA<br>|-||0.1<br>BEA<br>|-||1<br>BEA<br>|100||UA<br>|nA|
|Gate-sourceleakagecurrent<br>‘igss|‘igss||_V_GS<br>_V_DS<br>|=30v,=ov|||-|||-|||100|||nA|
|Gate-source leakage current<br>‘igss<br>Drain-source on-state resistance |<br>Gateinputresistance<br>||‘igss |<br>|Rpsion)<br>|<br>||_V_GS<br>_T_j<br>_T_j<br>| =30v, =ov |<br>=10V, Ip=13.1A<br>=25°C<br>=150°C<br>RAMHz,opendrain|| - |<br>|-||| - |<br>0.16 |<br>0.43<br>|0.54]|| 100 |<br>| 0.19<br>-<br>0.54]-||Ω<br>|nA<br>||
|Gateinputresistance<br>||_R_G<br>|<br>||RAMHz,opendrain||-|||0.54]|0.54]-|||



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|Parameter<br>Symbol]|Symbol]<br>donee|Symbol]<br>onatone|<br>donee|||__Vatues—_Unit<br>|typ.|max.|||__Vatues—_Unit<br>|typ.|max.|||__Vatues—_Unit<br>|typ.|max.||Unit<br>||
|---|---|---|---|---|---|---|
|||||__Vatues<br>_min.<br>|<br>||__Vatues—_<br>_min.<br>|typ.|<br>||—_Unit<br>_min.<br>|max.|<br>|||
|Transconductance<br>Parameter<br>Symbol]|_g_fs<br>Symbol]<br>donee<br>||_V_DS≥<br>Symbol]<br>onatone |<br>2*/D"RDS(on)max:<br>donee|<br>mov,<br>=v,|=||__Vatues<br>|<br>|<br>|=||__Vatues—_<br>| typ. |<br>17.5<br>|<br>|2400|=|—_Unit<br>| max.|<br>|<br>|=|Unit<br>|<br>Ss<br>oF|
|Input capacitance|_C_iss<br>donee<br>|<br>|<br>||_V_GS<br>_V_DS<br>_f_<br>donee|<br>mov,<br>=v, |=<br> ame||<br>|=|<br>=|||<br>|2400|=<br>|||<br>|=<br><br>-||oF<br>||
|Output capacitance<br>Effective|_C_oss<br>|<br>|<br>||||= |<br>=|<br>=||| 2400|=<br>|780]<br>|50|||=<br>780]<br>-|<br>|||
|Reverse transfer capacitance<br>Effective|_C_rss<br>| <br>|||= |<br>=|||<br>|50||- |<br>|||
|Effective output capacitance,<br>°)<br>energy related||_V_GS<br>_V_DS<br>=0V,<br>=0V to 480V|= |<br>fl|| 50|<br>fl||<br>fl||
|Effective output capacitance,<br>®)<br>time related|||fey|fey|fey||
|Turn-on delay time|_t_d(on)<br>||_V_DD<br>_V_GS<br>_R_G<br>Ω_T_j<br>=380V,<br>=0/13V,<br>Ip=20.7A,<br>=3.6<br>,<br>=125°C||10<br>5||||ns<br>100 |<br>||
|Rise time|_t_r<br>|<br>|<br>|||7)<br>=||7)<br>5|<br>|67 ||7)<br>|<br>67 |100 |||
|Turn-off delay time|_t_d(off)<br>|<br>|||=|<br>~~2~~1|5 |<br>|67 |<br>145|||<br>67 |100 |<br>|12|||
||||||||
|Fall time|_t_f<br>|||= |<br>~~2~~1||67 |<br>145||67 |100 |<br>|12|||



0J-STD20 and JESD22 

_E_ AR _f_ 

> 7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. 

> oss while _V_ DS _C_ oss while _V_ DS 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Inverse|diode|continuous|Is|T|C|=25°C|
|forward current|Is|
|Inverse diode direct current,|I|SM|
|pulsed|
|V|
|GS|
|Inverse diode forward|voltage|Vep|||=tels|||
|Reverse recovery time|t|rr|V|R|
|Reverse recovery charge|Q|rr|d|i|F/d|t|
|Peak reverse recovery current|I|rrm|
|||
|Peak|rate|of|fall|of|reverse|di,/at|T|j|=25°C|

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|---|---|---|
|I|
|Symbol|ee|
|spp|||SPA|

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> AZP2 **0N** GO60 **C** 3 **3** 

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## _T_ C 

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## _P T_ tot =f( C 

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## _V_ DS Ip=Ff() 

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10 2 ee SS ee ec Se<br> A<br>KN Sa<br>10 1<br>a ee ell<br>10 0 INUIT SL<br>tp = 0.001 ms<br>tp = 0.01 ms<br>tp = 0.1 ms Cora<br>10 -1 tp = 1 ms<br>DC<br>LT TE ET<br>10 -2<br>Il<br>10 [0] 10 [1] 10 [2]  V 10 [3]<br>_—__ V DS<br>I D<br>**----- End of picture text -----**<br>


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t<br>p<br>D= t p<br>**----- End of picture text -----**<br>


## Ip=f();.--=25°C _V_ DS _T_ j 

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V<br>GS<br>4<br>fe<br>|<br>ss<br>tte!<br>a<br>15 V<br>V DS<br>**----- End of picture text -----**<br>


## Ip=f(_);--=150°C _V_ DS _T_ j _V_ parameter: f, = 10 us, GS 

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## Rps(on)= _f_ (/p) 

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T j =150°C, V GS parameter : Ip = 13.1A, V GS<br>SPP20N60C3<br>1.5 1.1<br>Ω<br>**----- End of picture text -----**<br>


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Ip=f( Ves); Vos ≥ 2X Ip X Ros(on)ymax 

_V_ GS 

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inductive load, T =125°C<br>V V R Ω<br>DS GS G<br>**----- End of picture text -----**<br>


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R G  ), inductive load, T j =125°C d i /d t =f( R G  ,inductiveload, T =125°C<br>V V V V<br>DS =380V, GS =0/+13V, Ip=20.7 A par.: DS =380V, GS =0/+13V, Ip=20.7A<br>==<br> ———<br>= Vet ttt ty<br>wa wo 4 ET ET<br>————— 3000<br>=== ee ee<br>i 9500<br>See—— 2000 ATA<br>lee NS<br>LfiT TT 4000 [SS >~ _|<br>otiPAa oon aivavor) | —.__™oS<br>0 5 10 15tt20 |25 |30tf Ω 40 Litt 0 5 10 15 | 20 25 tte 30 Ω<br>— R G —— R G<br>/d i d t<br>**----- End of picture text -----**<br>


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d v /d t =f( R G  ), inductive load, T j =125°C E =f (Ip), inductive load, T j =125°C<br>V V V V R Ω<br>par.: DS =380V, GS =0/+13V, Ip=20.7A par.: DS =380V, GS =0/+13V, G =3.6<br>commutation losses<br>. mWs\, [snmienes] |<br>my seer ERR<br>e tttt Ye<br>i et J<br>pI ETE EE] te FEET JALT<br>oS Of me<br>* SSSA) “covtee<br>= eae aan<br>Ty Lit<br>% 5 10 15 20 25 30 Ω 40 % 3 6 | 9 | 12 | 15  | A<br>——<_ P R G —_> Ip<br>/d t<br>v<br>d<br>**----- End of picture text -----**<br>


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R T<br>G  ), inductiveload, =125°C lar = f<br>V V T ≤<br>DS =380V, GS =0/+13V, Ip=20.7A par.:<br>0.405) Eoncommutation includes SDPO6S60losses  diode J 20<br>A WA<br>JezREEP AGE ;<br>0.2 Sf 10<br>Ae Y 7<br>A<br>If LET tt ),<br>0 5 10 15 20 25 30 Ω 40<br>—_» R G<br>**----- End of picture text -----**<br>


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_V_ (BR)DSS =f ( _T_ 

## _T_ j ) 10A, _V_ DD 

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a<br>“ETT TTT TT<br>e4o-+a J<br>Pit]eett tt yt ty<br>4<br>PPP TA<br>600aaY<br>ssf + 4el |} | tt tt<br>Pi yi tt tt tt tt<br>CEE<br>LEE -60 -20 20  EEE 60 100 °C<br>T<br>—_ j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>


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f ) C=f( V DS )<br>E V<br>AR =1mJ parameter: GS<br>**----- End of picture text -----**<br>


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_f_ 

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25 Typ. _C_ oss _f V_ Eoss= ( DS ) 

_V_ DS 

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**SPP20N60C3 SPI20N60C3, SPA20N60C3** 

## PG-TO220-3-1, PG-TO220-3-21 : Outline 

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**SPP20N60C3 SPI20N60C3, SPA20N60C3** 

## Outline PG­TO220 FullPAK 

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1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00003319<br>A1 2.34 2.85<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 07<br>b1 0.95 1.38<br>b2 0.95 1.51 SCALE 5:1<br>b3 0.65 1.38 0 1 2 3 4 5mm<br>b4 0.65 1.51<br>c 0.40 0.63<br>D 15.67 16.15<br>D1 8.97 9.83 EUROPEAN PROJECTION<br>E 10.00 10.65<br>e 2.54<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>øP 3.00 3.30 ISSUE DATE<br>Q 3.15 3.50 27.01.2017<br>**----- End of picture text -----**<br>


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**SPP20N60C3 SPI20N60C3, SPA20N60C3** 

## PG-TO262-3-1/PG-TO262-3-21 (I²-PAK) 

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**SPx20N60C3** 

## SPx20N60C3 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|3.2|2018-02-27|Outline PG-TO-220 FullPAK update|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

15 

3 



## Links

- [View this product on Novapart](https://novapart.co/products/SPA20N60C3XKSA1/power-mosfet-n-channel-650-v-207-a-019-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/spa20n60c3xksa1/mosfet-n-coolmos-to-220/dp/1156420)
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