# Power MOSFET, N Channel, 650 V, 6.2 A, 0.68 ohm, TO-220F, Through Hole
**URL**: https://novapart.co/products/SPA06N60C3XKSA1/power-mosfet-n-channel-650-v-62-a-068-ohm-to-220f
**SKU**: SPA06N60C3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5960
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 32W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 32W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.68ohm |
| Transistor Case Style | TO-220F |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.2A |
| Drain Source On State Resistance | 0.68ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1471765/)
## **SPA06N60C3**
## **CoolMOS[TM] Power Transistor**
## **Features**
- New revolutionary high voltage technology
- Ultra low gate charge
## **Product Summary**
|**Product Summary**|||
|---|---|---|
||||
|_V_DS@_T_j,max|650|V|
||||
|_R_DS(on),max|0.75|Ω|
||||
|_I_D
1)|6.2|A|
- Periodic avalanche rated
- High peak current capability
- Ultra low effective capacitances
- Extreme d _v_ /d _t_ rated
P-TO220-3-31
- Improved transconductance
- Fully isolated package (2500 V AC; 1 minute)
|||||
|---|---|---|---|
|**Type**|**Package**|**Ordering Code**|**Marking**|
|||||
|SPA06N60C3|PG-TO220-3-31|Q67040-S4631|06N60C3|
**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified
|**Parameter**|**Symbol **|**Conditions**|**Unit**
**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current1)|_I_D|_T_C=25 °C|A
6.2
3.9
18.6|A|
|||_T_C=100 °C|||
|Pulsed drain current1)|_I_D,pulse|_T_C=25 °C|||
|Avalanche energy, single pulse|_E_AS|_I_D=3.1 A,_V_DD=50 V|200
mJ
0.5|mJ|
|Avalanche energy, repetitive_t_AR
1),2)|_E_AR|_I_D=6.2 A,_V_DD=50 V|||
|Avalanche current, repetitive_t_AR
1)|_I_AR||A
6.2|A|
|Drain source voltage slope|d_v_/d_t_|_I_D=6.2 A,_V_DS=480 V,
_T_j=125 °C|V/ns
50|V/ns|
|Gate source voltage|_V_GS|static|V
±20
±30|V|
||_V_GS|AC (_f_>1 Hz)|||
|Power dissipation|_P_tot|_T_C=25 °C|W
32|W|
|Operating and storage temperature|_T_j,_T_stg||°C
-55 ... 150|°C|
Rev. 1.3
page 1
2010-12-21
|e—
(
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teghnolegte's
;|||||||
|---|---|---|---|---|---|---|
|(
Infineon
teghnolegte's
;|||||**SPA06N60C3**||
||||||||
|**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermal resistance, junction - case|_R_thJC||-|-|3.92|K/W|
|Thermal resistance, junction -
ambient|_R_thJA|leaded|-|-|80||
|Soldering temperature|_T_sold|1.6 mm (0.063 in.)
from case for 10 s|-|-|260|°C|
**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified
|Drain-source breakdown voltage|_V_(BR)DSS
~~ee~~|_V_GS=0 V,_I_D=250 µA
~~ee~~|600
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|V
~~ee~~|
|---|---|---|---|---|---|---|
|Avalanche breakdown voltage
~~Pe]~~|_V_(BR)DS
~~Pe]~~|_V_GS=0 V,_I_D=6.2 A
~~Pe]~~
~~TT~~|-
~~ee~~
~~TT~~|700
~~ee~~
~~TT~~|-
~~ee~~||
|Gate threshold voltage
~~Pe]~~|_V_GS(th)
~~Pe]~~|_V_DS=_V_GS,_I_D=0.26 mA
~~Pe]~~
~~TT~~|2.1
~~TT~~|3
~~TT~~|3.9||
|Zero gate voltage drain current
~~Pe]~~|_I_DSS
~~Pe]~~|_V_DS=600 V,_V_GS=0 V,
_T_j=25 °C
~~Pe]~~
~~TT~~|-
~~TT~~|0.1
~~TT~~|1|µA|
|||_V_DS=600 V,_V_GS=0 V,
_T_j=150 °C|-
~~ee~~|-
~~ee~~|100
~~ee~~||
|Gate-source leakage current|_I_GSS
~~ee~~|_V_GS=20 V,_V_DS=0 V
~~ee~~|-
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|100
~~ee~~
~~ee~~|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=10 V,_I_D=3.9 A,
_T_j=25 °C|-
~~ee ~~|0.68
~~ee~~|0.75
~~ee~~|Ω|
|||_V_GS=10 V,_I_D=3.9 A,
_T_j=150 °C|-|1.82|-||
|Gate resistance|_R_G|_f_=1 MHz, open drain
~~ft~~|-
~~ft|~~|1
~~|~~|-||
|Transconductance|_g_fs
~~pt~~||_V_DS|>2|_I_D|_R_DS(on)max,
_I_D=3.9 A
~~pt~~
~~ft~~|-
~~pt~~
~~ft|~~|5.6
~~pt~~
~~|~~|-
~~pt~~|S|
Rev. 1.3
page 2
2010-12-21
|-
(
Infineon
technologies
4||||||
|---|---|---|---|---|---|
|(
Infineon
technologies
4||||**SPA06N60C3**||
|||||||
|**Parameter**||**Symbol **|**Conditions**|**Values**|**Unit**|
|||||**min.**
**typ.**
**max.**||
|**Dynamic characteristics**||||||
|Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related3)
Effective output capacitance, time
related4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time|_C_iss
-
620
-
_C_oss
-
200
-
_C_rss
-
17
-
_C_o(er)
-
28
-
_C_o(tr)
-
47
-
_t_d(on)
-
7
-
_t_r
-
12
-
_t_d(off)
-
52
-
_t_f
-
10
-
_V_GS=0 V,_V_DS=25 V,
_f_=1 MHz
_V_DD=480 V,
_V_GS=10 V,_I_D=6.2 A,
_R_G=12Ω
_V_GS=0 V,_V_DS=0 V
to 480 V
~~S|~~
~~Pf~~
~~So~~
~~PFff~~
~~eee~~
~~So~~
~~Ff~~
~~S|~~
~~Pf~~
~~So~~
~~Ff~~
~~S|~~
~~Pf~~||||pF
ns|
|Gate Charge Characteristics||||||
|Gate to source charge||_Q_gs||-
3.3
-|nC|
|Gate to drain charge||_Q_gd|_V_DD=480 V,_I_D=6.2 A,|-
12
-
=6.2 A,||
|Gate charge total||_Q_g|_V_GS=0 to 10 V|-
24
31||
|Gate plateau voltage||_V_plateau||-
5.5
-|V|
- 1) Pulse width limited by maximum temperature _T_ j,max only
- 2) Repetitive avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR* _f._
- 3) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS.
- 4) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS.
Rev. 1.3
page 3
2010-12-21
|**Reverse Diode**|||||||
|---|---|---|---|---|---|---|
|Diode continuous forward current|_I_S|_T_C=25 °C|-|-|6.2|A|
|Diode pulse current|_I_S,pulse||-|-|18.6||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=6.2 A,
_T_j=25 °C|-|0.97|1.2|V|
|Reverse recovery time|_t_rr|_V_R=480 V,_I_F=_I_S,
d_i_F/d_t_=100 A/µs|-|400|-|ns|
|Reverse recovery charge|_Q_rr||-|3.5|-|µC|
|Peak reverse recovery current|_I_rrm||-|25|-|A|
## **Typical Transient Thermal Characteristics**
|||**Unit**
K/W|**Symbol**|||
|---|---|---|---|---|---|
|**Symbol**|**Value**|||**Value**|**Unit**|
|||||||
||**typ.**|||**typ.**||
||||_C_th1|||
|_R_th1|0.034|||0.0000507|Ws/K|
||||_C_th2|||
|_R_th2|0.15|||0.00045||
||||_C_th3|||
|_R_th3|0.388|||0.00117||
||||_C_th4|||
|_R_th4|0.713|||0.0114||
||||_C_th5|||
|_R_th5|1.6|||0.939||
Rev. 1.3
page 4
2010-12-21
**SPA06N60C3**
**==> picture [87 x 10] intentionally omitted <==**
**----- Start of picture text -----**
1 Power dissipation
**----- End of picture text -----**
**==> picture [41 x 9] intentionally omitted <==**
**----- Start of picture text -----**
P tot=f( T C)
**----- End of picture text -----**
**==> picture [210 x 251] intentionally omitted <==**
**----- Start of picture text -----**
40
30
20
10
0
0 40 80 120 160
T C [°C]
[W]
tot
P
**----- End of picture text -----**
## **2 Safe operating area**
_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p
**==> picture [210 x 251] intentionally omitted <==**
**----- Start of picture text -----**
10 [2]
limited by on-state
resistance
1 µs
10 [1] 10 µs
100 µs
10 [0]
1 ms
DC 10 ms
10 [-1]
10 [-2]
10 [0] 10 [1] 10 [2] 10 [3]
V DS [V]
[A]
I D
**----- End of picture text -----**
**3 Max. transient thermal impedance**
_I_ D=f( _V_ DS); _T_ j=25 °C parameter: _D=t_ p/ _T_
## **4 Typ. output characteristics**
_I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS
**==> picture [432 x 251] intentionally omitted <==**
**----- Start of picture text -----**
10 [1] 20
20 V
7 V
16
0.5 6.5 V
10 [0]
0.2
12
0.1 6 V
0.05
8
5.5 V
10 [-1] 0.02
0.01
single pulse 4 5 V
4.5 V
4 V
10 [-2] 0
10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 0 5 10 15 20
t p [s] V DS [V]
[K/W] [A]
I D
thJC
Z
**----- End of picture text -----**
Rev. 1.3
2010-12-21
page 5
**SPA06N60C3**
**5 Typ. output characteristics**
_I_ D=f( _V_ DS); _T_ j=150 °C
parameter: _V_ GS
## **6 Typ. drain-source on-state resistance**
_R_ DS(on)=f( _I_ D); _T_ j=150 °C parameter: _V_ GS
**==> picture [465 x 598] intentionally omitted <==**
**----- Start of picture text -----**
8 6 V 4
20 V
V 4 V 4.5 V 5 V 5.5
7 V 5.5 V
6.5 V
6 3
V 6
5 V
V 20
4 2
4.5 V
2 1
4 V
0 0 wD
0 5 10 15 20 0 2 4 6 8 10
V DS [V] I D [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
DS(on)=f(=f( T j); ); I D=3.9 A; =3.9 A; V GS=10 V=10 V I D=f( V GS); | V DS|>2| I D| R DS(on)max
parameter: T j
2 25
C °25
1.6 20
1.2 15
98 %
0.8 typ 10
C °150
0.4 5
0 0 E
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]
2010-12-21
]
Ω
[A] [
I D
DS(on)
R
]
[ Ω [A]
I D
DS(on)
R
**----- End of picture text -----**
## **7 Drain-source on-state resistance**
_R_ DS(on)=f(=f( _T_ j); ); _I_ D=3.9 A; =3.9 A; _V_ GS=10 V=10 V
Rev. 1.3
page 6
**SPA06N60C3**
**9 Typ. gate charge**
## **10 Forward characteristics of reverse diode**
_V_ GS=f( _Q_ gate); _I_ D=6.2 A pulsed parameter: _V_ DD
_I_ F=f( _V_ SD) parameter: _T_ j
**==> picture [440 x 575] intentionally omitted <==**
**----- Start of picture text -----**
12 10 [2]
10
25 °C 25 °C, 98%
V 120 V 480
8 10 [1] 150 °C, 98%
150 °C
6
4 10 [0]
2
0 10 [-1]
fo 0 10 20 30 0 f 0.5 1 1.5 2 2.5
Q gate [nC] V SD [V]
11 Avalanche SOA 12 Avalanche energy
I AR=f( t AR) E AS=f( T j); I D=3.1 A; V DD=50 V
parameter: T j(start)
8 250
200
6
150
4
100
25 °C
125 °C
2
50
0 0
10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 20 60 100 140 180
t AR [µs] T j [°C]
[V]
[A]
V GS I F
[A] [mJ]
I AV E AS
**----- End of picture text -----**
parameter: _T_ j(start)
Rev. 1.3
2010-12-21
page 7
**SPA06N60C3**
**13 Drain-source breakdown voltage**
_V_ BR(DSS)=f( _T_ j); _I_ D=0.25 mA
## **14 Typ. capacitances**
_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz
**==> picture [436 x 574] intentionally omitted <==**
**----- Start of picture text -----**
700 10 [4]
660 10 [3] Ciss
620 10 [2]
Coss
580 10 [1] Crss
540 10 [0]
-60 -20 20 60 100 140 180 0 100 200 300 400 500
T j [°C] V DS [V]
15 Typ. C oss stored energy stored energy
oss = f (V DS )
5
4
3
2
1
0
0 100 200 300 400 500 600
V DS [V]
[V]
[pF]
C
BR(DSS)
V
[µJ]
oss
E
**----- End of picture text -----**
**15 Typ.** _**C**_ **oss stored energy stored energy**
_E_ oss _=_ f _(V_ DS _)_
Rev. 1.3
page 8
2010-12-21
**SPA06N60C3**
**Definition of diode switching characteristics**
Rev. 1.3
page 9
2010-12-21
**SPA06N60C3**
**PG-TO-220-3-31 (FullPAK)**
Rev. 1.3
page 10
2010-12-21
**SPA06N60C3**
**Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.**
## **Attention please!**
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 11
2010-12-21
## Links
- [View this product on Novapart](https://novapart.co/products/SPA06N60C3XKSA1/power-mosfet-n-channel-650-v-62-a-068-ohm-to-220f)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/spa06n60c3xksa1/mosfet-n-600v-to-220f/dp/1471765)
---
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