# Power MOSFET, N Channel, 500 V, 500 mA, 11.7 ohm, SOP, Surface Mount

![Product image](https://novapart.co/image/farnell:4203099/)

**URL**: https://novapart.co/products/SP8K80TB1/power-mosfet-n-channel-500-v-ma-117-ohm-sop
**SKU**: SP8K80TB1
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7740
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOP |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | - |
| Continuous Drain Current Id | 500mA |
| Drain Source On State Resistance | 11.7ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4203099/)

## 10V Drive Nch MOSFET 

## **SP8K80** 

##  **Structure** 

Silicon N-channel MOSFET 

##  **Features** 

1) Built-in G-S protection diode. 

2) Small surface mount package(SOP8). 

##  **Dimensions** (Unit : mm) 

**==> picture [120 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOP8<br>(8) (7) (6) (5)<br>(1) Tr1 Source<br>(2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate ||<br>(5) Tr2  Drain el (1) (2) (3) (4)<br>(6) Tr2 Drain<br>(7) Tr1 Drain ae<br>(8) Tr1 Drain<br>**----- End of picture text -----**<br>


 **Application** Switching 

##  **Packaging specifications** 

|Type|Package|Taping|
|---|---|---|
||Code|TB|
||Basic orderingunit(pieces)|2500|
|g(p)<br>SP8K80|||



##  **Inner circuit** 

**==> picture [155 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
(8) (7) (6) (5)<br>(1) Tr1 Source ∗ 2 ∗ 2<br>(2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate ∗ 1 ∗ 1<br>(5) Tr2  Drain<br>(6) Tr2 Drain (1) (2) (3) (4)<br>(7) Tr1 Drain 1 ESD PROTECTION DIODE<br>(8) Tr1 Drain 2 BODY DIODE<br>**----- End of picture text -----**<br>


 **Absolute maximum ratings** (Ta = 25C) 

|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)|(Ta = 25C)Ta = 25C)C)C))|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~a~~|Limits<br>~~a~~|Unit|
|Drain-source voltage||VDSS<br>~~rr~~|500<br>~~rr~~|V|
|Gate-source voltage<br>~~a~~||VGSS<br>~~a~~<br>~~ee~~|30<br>~~a~~<br>~~ee~~|V<br>~~ee~~|
|Drain current|Continuous<br>~~a~~<br>~~a~~|ID<br>*3<br>~~ee~~<br>~~ee~~|0.5<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
||Pulsed<br>~~a~~<br>~~a~~<br>~~a~~|IDP<br>*1<br>~~ee ~~<br>~~ee~~<br>~~ee~~|2<br> ~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Source current<br>(Body Diode)|Continuous<br>~~a~~<br>~~rs~~<br>~~a~~|IS<br>*3<br>~~ee ~~<br>~~rs~~<br>~~ee~~<br>~~ee~~|0.5<br> ~~ee~~<br>~~rs~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
||Pulsed<br>~~a~~|ISP<br>*1<br>~~ee~~<br>~~ee~~|2<br>~~ee~~|A<br>~~ee~~|
|Avalanche current||IAS<br>*2<br>~~ee~~<br>~~a~~|0.25<br>~~ee~~<br>~~a~~|A<br>~~ee~~|
|Avalanche energy||EAS<br>*2<br>~~a~~|0.017<br>~~a~~|mJ|
|Power dissipation||PD<br>*4<br>~~a~~|2<br>~~a~~|W|
|Channel temperature||Tch<br>~~a~~|0.2<br>~~a~~|C|
|Range of storage temperature||Tstg<br>~~a~~|55 to150<br>~~a~~|C|



*1 Pw10s, Duty cycle1% 

*2 L 500H, VDD=50V, RG=25, Tch=25°C 

- *3 Limited only by maximum channel temperature allowed. 

- *4 Mounted on a ceramic board. 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

1/6 

Data Sheet 

**SP8K80** 

##  **Electrical characteristics** (Ta = 25C) 

|**Electrical characteristics**(Ta|= 25C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|Gate-source leakage|IGSS|-|-|10|A|VGS=30V, VDS=0V|
|Drain-source breakdown voltage|V(BR)DSS|500|-|-|V|ID=1mA, VGS=0V|
|Zerogate voltage drain current|IDSS|-|-|100|A|VDS=500V, VGS=0V|
|Gate threshold voltage|VGS(th)|3.0|-|5.0|V|VDS=10V, ID=1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>*|-|9.0|11.7||ID=0.25A, VGS=10V|
|Forward transfer admittance|l Yfsl<br>*|0.1|-|-|S|VDS=10V, ID=0.25A|
|Input capacitance|Ciss|-|23.5|-|pF|VDS=25V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|-|36.5|-|pF||
|Reverse transfer capacitance|Crss|-|2.4|-|pF||
|Turn-on delaytime|td(on)<br>*|-|10|-|ns|VDD 250V, ID=0.25A<br>VGS=10V<br>RL=1000<br>RG=10|
|Rise time|tr<br>*|-|18|-|ns||
|Turn-off delaytime|td(off)<br>*|-|25|-|ns||
|Fall time|tf<br>*|-|170|-|ns||
|Totalgate charge|Qg<br>*|-|3.8|-|nC|VDD 250V<br>ID=0.5A<br>VGS=10V|
|Gate-source charge|Qgs<br>*|-|1.3|-|nC||
|Gate-drain charge|Qgd<br>*|-|1.6|-|nC||



*Pulsed 

##  **Body diode characteristics** (Source-Drain) 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD<br>*|-|-|1.5|V|IS=0.25A, VGS=0V|



*Pulsed 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

2/6 

Data Sheet 

**SP8K80** 

##  **Electrical characteristic curves** (Ta=25C) 

Fig.1 Typical Output Characteristics ( `Ⅰ` ) 

**==> picture [195 x 624] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.1<br>Ta=25°C  VGS=10.0V<br>Pulsed  VGS=8.0V<br>0.08 VGS=7.0V<br>VGS=6.5V<br>VGS=6.0V<br>0.06 VGS=5.0V<br>0.04<br>0.02<br>VGS=4.5V<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>Drain-Source Voltage : VDS [V]<br>Fig.3 Typical Transfer Characteristics<br>1<br>VDS=10V<br>pulsed<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>0.1 Ta=-25°C<br>0.01<br>0.001<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>Gate-Source Voltage :   VGS [V]<br>Fig.5 Static Drain-Source On-State Resistance vs. Drain Current<br>100<br>VGS=10V  Ta=125°C<br>pulsed  Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>10<br>1<br>0.01 0.1 1<br>Drain Current :  ID [A]<br>Drain Current : I [A] D<br>Drain Currnt :  I [A] D<br> [Ω]<br>DS(on)<br>R<br>Static Drain-Source On-State Resistance<br>**----- End of picture text -----**<br>


Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 

Fig.2 Typical Output Characteristics ( `Ⅱ` ) 

**==> picture [195 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5<br>VVGSGS=10.0V =8.0V  VGS=6.0V<br>0.4 VGS=7.0V<br>VGS=6.5V  Ta=25°C<br>Pulsed<br>0.3<br>0.2<br>VGS=5.0V<br>0.1<br>VGS=4.5V<br>0.0<br>0 1 2 3 4 5 6 7 8 9 10<br>Drain-Source Voltage : VDS [V]<br>Drain Current : I [A] D<br>**----- End of picture text -----**<br>


Fig.4 Gate Threshold Voltage vs. Channel Temperature 

**==> picture [208 x 404] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>VDS=10V<br>ID=1mA<br>pulsed<br>5<br>4<br>3<br>2<br>-50 0 50 100 150<br>Channel Temperature :   Tch [ ℃ ]<br>Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature<br>25<br>VGS=10V<br>pulsed<br>20<br>ID=0.50A<br>15<br>10 ID=0.25A<br>5<br>0<br>-50 0 50 100 150<br>Channel Temperature :   Tch [ ℃ ]<br> [V]<br>GS(th)<br>Gate Threshold Voltage :  V<br> [Ω]<br>DS(on)<br>Static Drain-Source On-State Resistance :  R<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

3/6 

Data Sheet 

**SP8K80** 

Fig.7 Forward Transfer Admittance vs. Drain Current 

**==> picture [196 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>VDS=10V<br>pulsed<br>0.1<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>0.01<br>0.001<br>0.001 0.01 0.1 1<br>Drain Current :  ID [A]<br> [S]<br>fs<br>Y<br>Forward Transfer Admittance<br>**----- End of picture text -----**<br>


Fig.8 Source Current vs. Source-Drain Voltage 

**==> picture [188 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>VGS=0V<br>pulsed<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>0.1<br>0.01<br>0 0.5 1 1.5 2<br>Source-Drain Voltage :  VSD [V]<br>Source Current :  I [A] S<br>**----- End of picture text -----**<br>


FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 

Fig.10 Switching Characteristics 

**==> picture [450 x 405] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 10000<br>18 Ta=25Pulsed °C  VVDDGS ≒ =10V 250V<br>16 1000 tf  RTaG=25=10Ω °C<br>Pulsed<br>14<br>12<br>ID=0.5A  td(off)<br>10 100<br>8 ID=0.25A  tr<br>6<br>10<br>4 td(on)<br>2<br>0 1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0.01 0.1 1<br>Gate-Source Voltage : VGS [V]  Drain Current : ID [A]<br>Fig.11 Dynamic Input Characteristics  Fig.12 Typical Capacitance vs. Drain-Source Voltage<br>12 1000<br>Ta=25°C  Ta=25°C<br>10 VIDDD=0.5A =250V  Coss  f=1MHz VGS=0V<br>Pulsed<br>100<br>8 Ciss<br>6 10 Crss<br>4<br>1<br>2<br>0 0.1<br>0 1 2 3 4 5 0.01 0.1 1 10 100 1000<br>Total Gate Charge : Qg  [nC]  Drain-Source Voltage : VDS [V]<br>]<br>W<br> [<br>DS(on)<br>R<br>Switching Time : t [ns]<br>Static Drain-Source On-State Resistance<br> [V]<br>GS Capacitance : C [pF]<br>Gate-Source Voltage : V<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

4/6 

Data Sheet 

**SP8K80** 

Fig.13 Normalized  Transient  Thermal  Resistance v.s. Pulse  Width 

**==> picture [195 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Ta=25°C<br>Single Pulse:1unit<br>1<br>0.1<br>0.01<br>Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>Rth(ch-a)=89.3°C/W<br>Rth(ch-a)(t)=r(t)×Rth(ch-a)<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse width : Pw (s)<br>）（tr<br>Normalized  Transient  Thermal  Resistance  :<br>**----- End of picture text -----**<br>


Fig.14 Maximum Safe Operating Area 

**==> picture [224 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Operation in this area<br>is limited by RDS(on)<br>(VGS = 10V)<br>1<br>PW = 100μs<br>0.1<br>PW = 1ms<br>PW = 10ms<br>0.01<br>Ta=25°C<br>Single Pulse:1unit  DC operation<br>Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>0.001<br>0.1 1 10 100 1000<br>Drain-Source Voltage : VDS [ V ]<br>[ A ]<br>Current  :  ID<br>Drain<br>**----- End of picture text -----**<br>


Fig.15 Reverse Recovery Time vs. Source Current 

**==> picture [191 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Ta=25°C<br>di/dt=50A/μs<br>VGS=0V<br>Pulsed<br>100<br>10<br>0.1 1<br>Source Current : IS [A]<br> [ns] Reverse Recovery Time : trr<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

5/6 

Data Sheet 

**SP8K80** 

##  **Measurement circuits** 

**==> picture [105 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br>


Fig.1-1  Switching Time Measurement Circuit 

**==> picture [128 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>IG(Const.) D.U.T.<br>VDD<br>**----- End of picture text -----**<br>


Fig.2-1  Gate Charge Measurement Circuit 

**==> picture [105 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS IAS<br>VDS<br>L<br>D.U.T.<br>RG<br>VDD<br>**----- End of picture text -----**<br>


Fig.3-1  Avalanche Measurement Circuit 

**==> picture [120 x 91] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>50% 90% 50%<br>VGS 10%<br>VDS<br>10% 10%<br>90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-2  Switching Waveforms 

**==> picture [130 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>Fig.2-2  Gate Charge Waveform<br>V(BR)DSS<br>IAS<br>VDD<br>EAS = 1 L IAS2 V(BR)DSS<br>2 V(BR)DSS - VDD<br>**----- End of picture text -----**<br>


Fig.3-2  Avalanche Waveform 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.10 -  Rev.A** 

6/6 

Notice 

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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

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www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

R1120A 



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