# Dual MOSFET, P Channel, 30 V, 30 V, 7 A, 7 A

![Product image](https://novapart.co/image/farnell:2769559/)

**URL**: https://novapart.co/products/SP8J5FRATB/dual-mosfet-p-channel-30-v-7-a
**SKU**: SP8J5FRATB
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.8790
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.02ohm; Rds(on) T; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Case Style | SOP |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 7A |
| Continuous Drain Current Id P Channel | 7A |
| Drain Source On State Resistance N Channel | - |
| Drain Source On State Resistance P Channel | 0.028ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2769559/)

SP8J5FRASP8J5 

Transistors 

**AEC-Q101 Qualified** 

## 4V Drive Pch+Pch MOS FET 

## **SP8J5 FRA** 

**Structure** 

Silicon P-channel MOS FET 

## **Features** 

1) Low On-resistance. (25m at 4.5V) 2) High Power Package. (PD=2.0W) 

3) High speed switching. 

4) Low voltage drive. (4V) 

## **External dimensions** (Unit : mm) 

**==> picture [169 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOP8<br>5.0<br>0.4 1.75<br>(8) (5)<br>(1) (4)<br>1pin mark ae 1.27 0.2<br>Each lead has same dimensions<br>3.9 6.0<br>0.4Min.<br>**----- End of picture text -----**<br>


## **Applications** 

Power switching, DC-DC converter 

|**Packaging specifications**<br>Package<br>Code<br>Taping<br>Quantity (pcs)<br>SP8J5<br>TB<br>2500<br>Type<br>FRA<br>—|**Packaging specifications**<br>Package<br>Code<br>Taping<br>Quantity (pcs)<br>SP8J5<br>TB<br>2500<br>Type<br>FRA<br>—|**Packaging specifications**<br>Package<br>Code<br>Taping<br>Quantity (pcs)<br>SP8J5<br>TB<br>2500<br>Type<br>FRA<br>—|||**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|**nner circuit**<br>∗2<br>(8)<br>(7)<br>∗2|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||
||||||||||||||
||||||||||∗1||||
|**Absolute maximum ratings**(Ta=25 C)|||||∗1 ESD PROTECTION DIODE<br>∗2 BODY DIODE|1 ESD PROTECTION DIODE<br>2 BODY DIODE<br>(1)<br>(2)|||||||
|<It is the same ratings for Tr1 and Tr2.>|<It is the same ratings for Tr1 and Tr2.>||||||||||||
|Parameter||Symbol||Limits||||||||Unit|
|Drain-source voltage||VDSS||−30||||||||V|
|Gate-source voltage||VGSS||±20||||||||V|
|Drain current|Continuous<br>Pulsed|ID<br>IDP|∗1|±7.0<br>±28||||||||A<br>A|
|Source current|Continuous|IS||−1.6||||||||A|
|(Body diode)|Pulsed|ISP|∗1|−28||||||||A|
|Total power dissipation||PD|∗2|2.0||||||||W|
|Channel temperature||Tch||150||||||||°C|
|Range of Storage temperature||Tstg||−55 to+150||||||||°C|



**==> picture [141 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
(8) (7) (6) (5)<br>∗2 ∗2<br>(1) Tr1 Source<br>∗1 ∗1 (2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate<br>(5) Tr2 Drain<br>(1) (2) (3) (4)<br>(6) Tr2 Drain<br>∗1 ESD PROTECTION DIODE (7) Tr1 Drain<br>∗2 BODY DIODE (8) Tr1 Drain<br>**----- End of picture text -----**<br>


<It is the same ratings for Tr1 and Tr2.> 

- ∗1 Pw≤10μs, Duty cycle≤1% 

- ∗2 Mounted on a ceramic board 

## **Thermal resistance** 

**Thermal resistance** Parameter Symbol Limits Unit ~~—_—_—_—_—_—__—==—~~ Channel to ambient Rth(ch-a) ∗ 62.5 °C / W ∗ Mounted on a ceramic board. 

1/4 

20190527- Rev. C 

SP8J5FRASP8J5 

Transistors 

## ~~e~~ **Electrical characteristics** (Ta=25 C) 

<It is the same characteristics for Tr1 and Tr2.> 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage||IGSS||−|−|±10|μA|VGS=±20V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||−30|−|−|V|ID= −1mA, VGS=0V|
|Zero gate voltage drain current||IDSS||−|−|−1|μA|VDS= −30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||−1.0|−|−2.5|V|VDS= −10V, ID= −1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−<br>−|20<br>25|28<br>35|mΩ<br>mΩ|ID= −7A, VGS= −10V<br>ID= −3.5A, VGS= −4.5V|
|||||−|30|42|mΩ|ID= −3.5A, VGS= −4.0V|
|Forward transfer admittance||Yfs|∗|6.0|−|−|S|VDS= −10V, ID= −3.5A|
|Input capacitance||Ciss||−|2600|−|pF|VDS= −10V|
|Output capacitance||Coss||−|450|−|pF|VGS=0V|
|Reverse transfer capacitance||Crss||−|350|−|pF|f=1MHz|
|Turn-on delay time<br>Rise time<br>Turn-off delay time|td (on)<br>tr<br>td (off)<br>∗<br>∗<br>∗|||−<br>−<br>−|20<br>50<br>110|−<br>−<br>−|ns<br>ns<br>ns|VDD<br>−15V<br>ID= −3.5A<br>VGS= −10V<br>RL=4.3Ω|
|Fall time||tf|∗|−|70|−|ns|RG=10Ω|
|Total gate charge||Qg|∗|−|25|−|nC|VDD<br>−15V|
|Gate-sourcecharge||Qgs|∗|−|5.5|−|nC|VGS= −5V|
|Gate-draincharge||Qgd|∗|−|10|−|nC|ID= −7A|
|∗Pulsed|||||||||



~~e~~ **Body diode characteristics** (Source-drain) (Ta=25 C) 

<It is the same characteristics for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD|−|−|−1.2|V|IS= −1.6A, VGS=0V|



2/4 

20190527- Rev. C 

SP8J5FRASP8J5 

Transistors 

## ~~e~~ **Electrical characteristic curves** 

**==> picture [433 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 VDS= −10V 1000 Ta=25°C 100 VGS= −10V<br>Pulsed Pulsed Pulsed<br>|HH ===wrhf | ==si——pe ++ee S——ea e se<br>1 Ta=125°C<br>== TaTaTa=== −752525° ° CC°C SGA (FARR EEEH 100 VVVGSGSGS= −= −= −4V4.5V10V == —— nest reo eI]<br>0.1 SEEREEERYoa SAV 5 42 ARRREEEE PNRee 10 PL/Iee7 Ta=125°C<br>Ta=75 ° C<br>Boo 10 a Pop Ta Ta == −25 25 °C° C TE<br>0.01<br>SERRESSPERE SSS) SS252/17SS 25FRRRRREEEESSS SSS=== ==eoa ae aellenill<br>FERRERS ESR RRR RRA a<br>0.001 THEPCCP 1 lll 1 CAI Co<br>1.0 1.5 2.0 2.5 3.0 0.1 1 10 0.1 1 10<br>GATE-SOURCE VOLTAGE : −VGS (V) DRAIN  CURRENT : −ID (A) DRAIN  CURRENT : −ID (A)<br>Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Fig.3 Static Drain-Source On-State<br>Resistance vs.  Drain Current Resistance vs.  Drain Current<br>1000 1000 10<br>VGS= −4.5V VGS= −4V VGS=0V<br>popoa ee Pulsed poapT eee eee Pulsed Pa TaTa==12575°C°C 4tt} fh2 AAA) A Pulsed |<br>a ee ee a ee Ta=25°C NSAI LELLL<br>es| aPe 1 Baeeess///RRREEE Ta= −25°C SAH<br>Ta=125°C Ta=125°C<br>100 coc) Ta=75°C 100 Ta=75°C SSSSS°5555=====—<br>a eee Ta = 25 ° C A A =  OUI")a ee ee | Ta=25°C KV eer BBB<br>Ta= −25°C Ta= −25°C<br>==a——— SEHoo PEESersRH| 0.1 PCS=S=7SSS 552722 =—===——<br>| | See<br>10 PT TTT 10 ll 0.01 PEPE<br>0.1 1 10 0.1 1 10 0.0 0.5 1.0 1.5<br>DRAIN  CURRENT : −ID (A) DRAIN  CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V)<br>Fig.4 Static Drain-Source On-State  Fig.5 Static Drain-Source On-State  Fig.6 Reverse Drain Current<br>vs. Drain Current vs. Drain Current Source-Drain Current<br>10000 eeeeTeefn cece eee TafV= GS 1MHz==250V°C 100001000 PeSHPSSTSS SSSHia tf TTTSee| RTaVVPulsedDDGSG=== −= −2510°Ω15V10VC 876 CePeePCPTT TTT TTTTTTTT] TaVIRPulsedDDDG===−=25107A−°Ω15VC<br>Frit Tne Ciss JN td (off) EI 5 PTT<br>PUT oom SS SS oo PT oo<br>1000 CT TTT | 100 S ST 4 HUSUUEEEUUERRRRRERERED” ANNE<br>eer T S HREEREREREREERRERERED7AHERRREL<br>ES Ee tr tr TH 3 Pee<br>CHEE HITMIECTSSN Coss 10 Serer td (on) rl 2 HEEDANSEEAAAAAREEEERREEEEEEL<br>HTSUN Crss SS HANAURAHEAOESURASEREESOEEOAL<br>TT IS Seer eri meat 1 PACELCCELCE<br>1000.01 UII 0.1 VAIN 1 10 7 100 0.011 PettTT 0.1 Heit 1 tt 10 0 0 MCCPATHE 5 10 HEE 15 CCEPEE 20 eeCCEL 25 CC 30<br>DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN  CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.7 Typical Capacitance Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics<br>vs. Drain-Source Voltage<br>)Ω )Ω<br> (m  (m<br> (A)ID− RDS (on) RDS (on)<br>DRAIN CURRENT :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :<br>) (mΩ ) (mΩ  (A)<br>IDR−<br>DS (on) DS (on)<br>R R<br>REVERSE DRAIN CURRNT :<br>STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :  STATIC  DRAIN-SOURCE ON-STATE  RESISTANCE :<br> (V)<br>GS<br>V<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) −<br>GATE-SOURCE VOLTAGE :<br>**----- End of picture text -----**<br>


3/4 

20190527- Rev. C 

SP8J5FRASP8J5 

Transistors 

## **Measurement circuits** 

**==> picture [138 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG<br>VDD<br>mit<br>Fig.10  Switching Time Test Circuit<br>**----- End of picture text -----**<br>


**==> picture [141 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS ID<br>VDS<br>RL<br>IG(Const.)<br>D.U.T.<br>RG<br>VDD<br>pel<br>Fig.12  Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


**==> picture [130 x 81] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS 10%<br>90%<br>90% 90%<br>10% 10%<br>VDS<br>td(on) tr td(off) tr<br>ton toff<br>**----- End of picture text -----**<br>


Fig.11  Switching Time Waveforms 

**==> picture [112 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br>


Fig.13  Gate Charge Waveform 

4/4 

20190527- Rev. C 



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- [Supplier page](https://es.farnell.com/rohm/sp8j5fratb/mosfet-aec-q101-dual-p-30v-7a/dp/2769559)
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