SNRVUD620CTT4G
Fast / Ultrafast Diode, 200 V, 6 A, Dual Common Cathode, 1.2 V, 35 ns, 50 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):6A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:35ns; Forwar
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: TO-252 (DPAK)
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.2V
- Forward Surge Current: 50A
- Reverse Recovery Time: 35ns
- Average Forward Current: 6A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.168 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT ## Switch-mode Power Rectifier **DPAK Surface Mount Package** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - Ultrafast 35 Nanosecond Recovery Time - Low Forward Voltage Drop - Low Leakage - ESD Rating: - ♦ Human Body Model = 3B (> 8 kV) - ♦ Machine Model = C (> 400 V) - NRVUD, SRVUD and SNRVUD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **www.onsemi.com** **==> picture [150 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> ULTRAFAST RECTIFIER<br>6.0 AMPERES<br>200 VOLTS<br>DPAK<br>CASE 369C<br>»<br>1<br>4<br>3 oat<br>MARKING DIAGRAMS<br>AYWW AYWW<br>U U<br>620TG S620TG<br>A 4) = Assembly Location* 4]<br>Y = Year<br>WW = Work Week<br>U620T = Device Code (MURD/NRVUD/<br>SNRVUD620CT)<br>US620T = Device Code (SRVUD620CT)<br>G = Pb−Free Package<br>**----- End of picture text -----**<br> * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURD620CTG|DPAK<br>(Pb−Free)|75 Units / Rail| |NRVUD620CTG|DPAK<br>(Pb−Free)|75 Units / Rail| |MURD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel| |NRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SNRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel| |NRVUD620CTG−<br>VF01|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MURD620CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **June, 2017 − Rev. 14** **MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V| |Average Rectified Forward Current<br>(Rated VR, TC= 140°C)<br>Per Diode<br>Per Device|IF(AV)|3.0<br>6.0|A| |Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 145°C)<br>Per Diode|IF|6.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)|IFSM|50|A| |Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** (Per Diode) |**THERMAL CHARACTERISTICS**(Per Diode)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|9|°C/W| |Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|80|°C/W| 1. Rating applies when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** (Per Diode) |**ELECTRICAL CHARACTERISTICS**(Per Diode)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage Drop (Note 2)<br>(iF= 3 Amps, TC= 25°C)<br>(iF= 3 Amps, TC= 125°C)<br>(iF= 6 Amps, TC= 25°C)<br>(iF= 6 Amps, TC= 125°C)|vF|1<br>0.96<br>1.2<br>1.13|V| |Maximum Instantaneous Reverse Current (Note 2)<br>(TJ= 25°C, Rated dc Voltage)<br>(TJ= 125°C, Rated dc Voltage)|iR|5<br>250|�A| |Maximum Reverse Recovery Time<br>(IF= 1 Amp, di/dt = 50 Amps/�s, VR= 30 V, TJ= 25°C)<br>(IF= 0.5 Amp, iR= 1 Amp, IREC= 0.25 A, VR= 30 V, TJ= 25°C)|trr|35<br>25|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>70 TJ = 175 ° C<br>10<br>50<br>1 150 ° C<br>100 ° C<br>30<br>0.1<br>20<br>0.01<br>25 ° C<br>10 0.001<br>7.0<br>0.0001<br>0 20 40 60 80 100 120 140 160 180 200<br>5.0 VR, REVERSE VOLTAGE (V)<br>Figure 2. Typical Leakage Current* (Per Leg)<br>3.0 175°C TJ = 25°C * The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selections<br>2.0 can be estimated from these curves if VR is sufficiently below rated<br>VR.<br>150°C 100°C 14<br>1.0 13 5.0 SINE<br>12 10 WAVE<br>0.7<br>11<br>10 IPK/IAV = 20 dc<br>0.5<br>9.0<br>8.0<br>7.0 SQUARE<br>0.3<br>6.0 WAVE<br>5.0<br>0.2<br>4.0<br>3.0 T J = 175°C<br>2.0<br>0.1<br>1.0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>0<br>vF, INSTANTANEOUS VOLTAGE (V) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>Figure 1. Typical Forward Voltage (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 3. Average Power Dissipation (Per Leg)<br>8.0 4.0<br>RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED<br>7.0 R�JC = 9°C/W 3.5 R�JA = 80°C/W<br>6.0 3.0<br>TJ = 175°C SURFACE MOUNTED ON<br>5.0 2.5<br>MIN. PAD SIZE RECOMMENDED<br>dc<br>4.0 2.0<br>SINE WAVE<br>dc<br>3.0 OR 1.5 T J = 175°C<br>SQUARE WAVE<br>2.0 1.0 SINE WAVE<br>OR<br>1.0 0.5 SQUARE WAVE<br>0 0<br>100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) IF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Current Derating, Case (Per Leg)** **Figure 5. Current Derating, Ambient (Per Leg)** **www.onsemi.com** **3** **MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** ## **TYPICAL CHARACTERISTICS** **==> picture [245 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 25 ° C<br>10<br>1<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 6. Typical Capacitance (Per Leg)** **www.onsemi.com** **4** **MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** ## **PACKAGE DIMENSIONS** **==> picture [481 x 448] intentionally omitted <==** **----- Start of picture text -----**<br> DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 bly op Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.<br>6. DATUMS A AND B ARE DETERMINED AT DATUM<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE HL 0.0550.370 0.0700.410 1.409.40 10.411.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>fl L1 ys ce CONSTRUCTIONSALTERNATE Gh Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9 CW SOLDERING FOOTPRINT*<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Oe<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ **MURD620CT/D** **www.onsemi.com 5**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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