# Power MOSFET, N Channel, 60 V, 200 mA, 2.3 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3755147/)

**URL**: https://novapart.co/products/SN7002IXTSA1/power-mosfet-n-channel-60-v-200-ma-23-ohm-sot
**SKU**: SN7002IXTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0390
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 2.3ohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3755147/)

om. Cinfineone@ 

SN7002I 

## Small ~~-S~~ ignal Transistor 

## Features 

- ¢ N ~~-~~ channel 

- e« Enhancement mode 

- Logic level 

- ¢ dv/dt rated 

- Pb ~~-f~~ ree lead plating; ROHS compliant 

- * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

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## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

~~Table 1. | Key Performance Parameters~~ 

ESD[Sen] ~~[si]~~[tivity,] 

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Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

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Small ~~-S~~ ignal Transistor 

CiT **n** fitneon ; 

$N7002I 

## 1 Maximum ratings at Ta=25 °C, unless otherwise specified 

|Table<br>2_—/|Maximum|Maximum ratings|ratings|ratings|ratings|ratings|ratings|ratings|ratings|
|---|---|---|---|---|---|---|---|---|---|
|~~m~~~~**aramet**~~<br>~~er~~||||~~Symbol,~~<br>~~ymbo~~<br>~~Min.~~|~~Symbol,ae~~<br>~~Min.|~~<br>~~Typ.[Max._|~~|||~~it~~|~~No|Te~~~~**s**t~~<br>~~Condit~~<br>~~ote /Te t~~<br>~~Condition~~|
||||||~~Symbol,ae~~<br>~~Min.|~~<br>~~Typ.~~|~~ae~~<br>~~|~~<br>~~Typ.[Max._|~~|~~[Max._|~~|||
|~~m~~~~**aramet**~~<br>~~er~~||||~~Symbol,~~<br>~~ymbo~~<br>~~Min.~~|~~Symbol, ae~~<br>~~Min. |~~<br>~~Typ.~~|~~ae~~<br>~~|~~<br>~~Typ. [Max._|~~|~~[Max._|~~|~~it ~~|~~No | Te~~~~**s**t~~<br>~~Condit~~<br>~~ote / Te t~~<br>~~Condition~~|
|~~Reversediodedvidt~~||||~~dvidt~~<br>~~-~~|~~-b~~|~~be~~|~~e|~~|~~kVius|~~|~~|2-0-2~~|
|~~Reversediodedvidt~~||||~~dvidt~~<br>~~-~~|~~-b~~|~~be~~|~~e|~~|~~kVius|~~|~~|2-0-2~~<br>fh Mas=48 V,dildt=200Alus,<br>j,max—|
|~~Reverse diode dvidt~~<br>~~Powerdissipation~~||||~~dvidt~~<br>~~-~~<br>~~Po|;~~|~~- b~~<br>~~|;~~|~~be~~<br>~~40.86~~|~~e | ~~<br>~~40.86JW~~|~~kVius |~~<br>~~JW~~<br>~~|~~|~~|2-0-2~~<br>~~|Ta25°C,Rinsn=350°C~~|
|~~Powerdissipation~~||||~~Po|;~~|~~|;~~|~~40.86~~|~~40.86JW~~|~~JW~~<br>~~|~~|~~|Ta25°C,Rinsn=350°C~~|
|~~Power dissipation~~||||~~Po |;~~|~~|;~~|~~40.86~~|~~40.86 JW~~|~~JW~~<br>~~|~~|~~| Ta 25 °C, Rinsn=350 °C~~|



## 2 Thermal characteristics 

|Table 3_—|Thermal|Thermal characteristics|characteristics|characteristics|characteristics|characteristics|characteristics|characteristics|
|---|---|---|---|---|---|---|---|---|
|~~p~~~~**aramet**~~<br>~~er~~|||~~symbol,~~<br>~~ymbo~~<br>~~Min,~~|~~symbol,ae~~<br>~~nit~~<br>~~Min,~~<br>~~Typ.[Max.|~~|||~~nit~~|~~N~~~~**o**ITe~~~~**s**t~~<br>~~Condit~~<br>~~te/Te t~~<br>~~Condition~~|
|||||~~symbol,ae~~<br>~~Min,~~<br>~~Typ.~~|~~ae~~<br>~~Typ.[Max.~~|~~nit~~<br>~~[Max.|~~|||
|~~p~~~~**aramet**~~<br>~~er~~<br>Thermal resistance, junction ~~- ~~ambient,|||~~symbol,~~<br>~~ymbo~~<br>~~Min,~~<br>ambient,|~~symbol, ae~~<br>~~Min,~~<br>~~Typ.~~|~~ae~~<br>~~Typ. [Max.~~|~~nit~~<br>~~[Max.|~~|~~nit ~~|~~N~~~~**o** I Te~~~~**s**t~~<br>~~Condit~~<br>~~te / Te t~~<br>~~Condition~~|



## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

|Table 4|Static characteristics|characteristics|characteristics|characteristics|characteristics|characteristics|characteristics|characteristics|
|---|---|---|---|---|---|---|---|---|
|~~p~~~~**aramet**~~<br>~~er~~<br>~~Drain-sourcebreakdownvoltage~~|||~~Symbol,~~<br>~~ymbo~~<br>~~Min,~~<br>~~lVaross~~<br>~~[60~~|~~Symbol,ae~~<br>~~Min,~~<br>~~Typ.[Max.|~~|||~~it~~<br>~~|v~~|~~No|Te~~~~**s**t~~<br>~~Condit~~<br>~~ote/Te t~~<br>~~Condition~~<br>~~Ves=0V,Ip=250YA~~|
|||||~~Symbol,ae~~<br>~~Min,~~<br>~~Typ.~~<br>~~[60|-~~|~~ae~~<br>~~Typ.[Max.~~<br>~~|- |-~~|~~[Max.|~~<br>~~|-|v~~|||
|~~p~~~~**aramet**~~<br>~~er~~<br>~~Drain-sourcebreakdownvoltage~~<br>~~Gatethresholdvoltage~~|||~~Symbol,~~<br>~~ymbo~~<br>~~Min,~~<br>~~lVaross~~<br>~~[60~~<br>~~Vosm~~<br>~~(0.8~~|~~Symbol, ae~~<br>~~Min,~~<br>~~Typ.~~<br>~~[60|-~~<br>~~(0.8(14~~|~~ae~~<br>~~Typ. [Max.~~<br>~~|- |-~~<br>~~(14(18~~|~~[Max.|~~<br>~~|-|v~~<br>~~(18[Ve~~|~~it ~~<br>~~|v~~<br>~~[Ve~~|~~No | Te~~~~**s**t~~<br>~~Condit~~<br>~~ote / Te t~~<br>~~Condition~~<br>~~Ves=0V,Ip=250YA~~<br>~~Vos=Ves,[p=26UA~~|
|~~Drain-source breakdown voltage~~<br>~~Gatethresholdvoltage~~|||~~lVaross~~<br>~~[60~~<br>~~Vosm~~<br>~~(0.8~~|~~[60 |-~~<br>~~(0.8(14~~|~~|-  |-~~<br>~~(14(18~~|~~|- |v~~<br>~~(18[Ve~~<br>~~hm~~|~~|v ~~<br>~~[Ve~~<br>~~hm~~|~~Ves=0 V, Ip=250 YA~~<br>~~Vos=Ves,[p=26UA~~<br>~~Mes~~|
|~~Gate threshold voltage~~<br>mesmronmeanaron<br>~~Gate-sourceleakagecurrent~~|||~~Vosm~~<br>~~(0.8~~<br>~~fing~~<br>~~lesssee~~|~~(0.8 (14~~<br>~~fing~~<br>~~see~~|~~(14 (18~~<br>~~fing~~<br>~~see~~|~~(18 [Ve~~<br>~~fing~~<br>~~hm~~<br>~~10[nc~~|~~[Ve ~~<br>~~fing~~<br>~~hm~~<br>~~[nc~~|~~Vos=Ves, [p=26 UA~~<br>~~Mes~~<br>=<br>,<br>Ves=0<br>V,<br>T=<br>~~Ves=20V,Vos=0V~~|
|~~Gate-sourceleakagecurrent~~<br>~~Drain-sourceon-stateresistance~~|||~~lesssee~~<br>~~Foam~~|~~see~~<br>~~|~~|~~see~~<br>~~oe~~|~~hm~~<br>~~10[nc~~|~~hm ~~<br>~~[nc~~|~~Mes~~<br>~~Ves=20V,Vos=0V~~<br>~~yaaaOotyA~~|
|~~Gate-source leakage current~~<br>~~Drain-sourceon-stateresistance~~<br>~~Transconductance~~|||~~less see~~<br>~~Foam~~<br>~~los~~<br>~~ssfoog-fot7~~|~~see~~<br>~~|~~<br>~~foog-fot7~~|~~see~~<br>~~oe~~<br>~~foog-fot7|-~~|~~10 [nc~~<br>~~|- [s~~|~~[nc ~~<br>~~[s|~~|~~Ves=20 V, Vos=0 V~~<br>~~yaaaOotyA~~<br>~~|Vos|22|/p|Rosionymax,[>=0.16A~~|
|~~Drain-source on-state resistance~~<br>~~Transconductance~~|||~~Foam ~~<br>~~los~~<br>~~ssfoog-fot7~~|~~|~~<br>~~foog-fot7~~|~~oe~~<br>~~foog-fot7|-~~|~~|- [s~~|~~[s|~~|~~yaaa OotyA~~<br>~~|Vos|22|/p|Rosionymax,[>=0.16A~~|



Final Data Sheet 

3 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

Small ~~-S~~ ignal Transistor 

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## SN7002I 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|5|Dynamic|characteristics|
|m|aramet|er|symbol,ymbo|Min.|_|Typ.aes||Max._|umnote /||TeTe t|s|t|ConditionCondit|
|Input|capacitance|css|fe|82|p|Ves=0|V,|Vos=30|V,|H1|MHz|
|Output|capacitance|Coss|se|(53|[pF|Ves=0|V,|Vos=30|V,|1|MHz|
|Reverse|transfer|capacitance|Ces|[es|20>|pr|Ves=0|V,|Vos=30|V,|1|MHz|
|sext™|
|sext™|
|Table|6|Gate|charge|characteristics|
|m|aramet|er|Symym|bo|l|jaeMin.||Typ.|[Max._|it|N|o|te /||TeTe t|s|t|ConditionCondit|
|Gate|to|source|charge|las|seit|fe|[nc|Vop=30|V,|Ib=0.5|A,|Ves=0|to|10|V|
|Gate|to|drain|charge|ae|=|sides.||-|[nc|Vop=30|V,|Ip=0.5|A,|Ves=0|to|10|V|
|Gate|charge|total|las|ifn|nc|Vop=30|V,|Ip=0.5|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Voatew||-|f4-|Vop=30|V,|Ip=0.5|A,|Ves=0|to|10|V|
|Table|7|Reverse|diode|
|p|aramet|er|Symbol,ymbo|Min.||eae|lumote /I|TeTe t|s|t|ConditionCondit|
|Typ.||Max.|
|Diode|continuous|forward|current|a|ee|ee|eee|Ta=25|°C|
|Diode|forward|voltage|Vso||=||0.83.|[4.2|[V__|||Vos=0V,|r=0.2|A,|Ti=25|°C|
|Reverse|recovery|time|it,|es|(14.2|[21.3|[ns|[Va=30V,|Ir=0.2|A,|dic/dt=100|A/us|
|Reverse|recovery|charge|la,|sds.|[88|[nc|Vr=30|V,|Ir=0.2|A,|dir/dt=100|A/us|

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## Table 7 Reverse diode 

Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

om Cinfi neon , 

Small ~~-S~~ ignal Transistor 

SN7002I 

## 4 Electrical characteristics diagrams 

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Final Data Sheet 

5 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

Small ~~-S~~ ignal Transistor 

SN7002I 

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Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

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Final Data Sh 

eet 

if 

Vv ~~.~~ 21 ~~-0~~ 33 ~~--~~ 16 

Small ~~-S~~ ignal Transistor 

SN7002I 

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.)_—<br>Cin fineon ;<br>**----- End of picture text -----**<br>


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Diagram 13: Typ. gate charge Diagram 14: Drain - source breakdown voltage<br>1 "a ee 7 ®<br>| —-30V pit tT | TT TP PP A ee EEE EEE EEE EEE EEE<br>Vr isvL LEE EE a<br>t T TTT TTT TTT Tt ryaLt tt seAeA,<br>e H<br>LTTLEE TTT TTT TTT TTTHa YA TT TT BEERee EEREEEREeee eee AHeee<br>LTT ETE TTTTTT TTT TTT TEE TTTAY TAA TTTT 65 TrEEE<br>ettttTTT TTT TTT TT Aye tT 7,A<br>PET TT ttTT tttTT tttTT | TATAa TETtT tttET tt eT TTTT | Js ob A+4 4 4H7AT<br>S LTT TTT TTT TY 44 TETTTT) oye YAHSH<br>D titi tity Yet tt et tt | oda See eee<br>S CPO PEESe ev Trt) pe RR eee<br>Ne e e eee ee<br>BE A R KT---  AE E<br>BETT | ET R TT TTT TET TT TTeTT ET TT TT TI ECCCECCCCAEEEEEEELEEEELSe 4EEE<br>BW 594<br>poe Ae ee<br> See Pye yy<br>LAT a46<br>ET,  TTTTT EETET Te TT TTETT TT tTEEE TTTy TTTTE TTTTTTI TPPPt rAA-<br>py SER eee 55 SDPLI4A4 e0<br>0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 - 80 - 40 0 40 80 120 160<br>Qgate [nC] Tj [°C]<br>Ves=f(Qgate), /p>=0 . 5 A pulsed, 7j=25 °C; parameter: Vop Varipss)="(7j); />=250 pA<br>**----- End of picture text -----**<br>


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Diagram Gate charge waveforms<br>Vos<br>Q g<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 

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Small ~~-S~~ ignal Transistor $N7002I 

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_<br>n neon<br>**----- End of picture text -----**<br>


## Revision History 

## SN7002I 

Revision: 2021 ~~-0~~ 3 ~~-1~~ 6, Rev ~~.~~ 2.1 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects (major changes since last revision)|||||||||||
|2.0||||2021~~-~~01~~-~~26|||/|Release of final version|||||||||||
|2.1||||2021~~-0~~3~~-~~16||||Updatetechnologynaming|||||||||||



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## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ~~.~~ Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ~~.~~ If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~ 

Final Data Sheet 

10 

Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 16 



## Links

- [View this product on Novapart](https://novapart.co/products/SN7002IXTSA1/power-mosfet-n-channel-60-v-200-ma-23-ohm-sot)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/sn7002ixtsa1/mosfet-n-ch-60v-0-2a-sot-23/dp/3755147)
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