# Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm ![Product image](https://novapart.co/image/farnell:3368910RL/) **URL**: https://novapart.co/products/SMUN5235T1G/bipolar-pre-biased-digital-transistor-single-npn **SKU**: SMUN5235T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Pre-Biased / Digital Bipolar Transistors **Price**: €0.0310 **Stock**: 200+ **Lead Time**: 127 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3 Pin | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 310mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | Single NPN | | Transistor Case Style | SC-70 | | Base Input Resistor R1 | 2.2kohm | | Dc Current Gain Hfe Min | 80hFE | | Base Emitter Resistor R2 | 47kohm | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max Npn | 50V | | Collector Emitter Voltage Max Pnp | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368910RL/) ## MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 ## Digital Transistors (BRT) R1 = 2.2 k R2 = 47 k ## **NPN Transistors with Monolithic Bias Resistor Network** This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. ## **Features** - Simplifies Circuit Design ## **www.onsemi.com** ## **PIN CONNECTIONS** **==> picture [149 x 117] intentionally omitted <==** **----- Start of picture text -----**
PIN 3
COLLECTOR
(OUTPUT)
PIN 1 R1
BASE
(INPUT) R2
C 5) PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
**----- End of picture text -----**
**==> picture [483 x 318] intentionally omitted <==** **----- Start of picture text -----**
• Reduces Board Space
• Reduces Component Count XX M CASE 318DSC−59
• S and NSV Prefix for Automotive and Other Applications Requiring STYLE 1
Unique Site and Control Change Requirements; AEC−Q101 1
o
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SOT−23
Compliant XXX M CASE 318
STYLE 6
MAXIMUM RATINGS (TA = 25 ° C) 1
Rating Symbol Max Unit SC−70/SOT−323
XX M
Collector−Base Voltage VCBO 50 Vdc CASE 419
STYLE 3
Collector−Emitter Voltage VCEO 50 Vdc 1
Collector Current − Continuous IC 100 mAdc SC−75
Input Forward Voltage VIN(fwd) 12 Vdc XX M CASE 463
STYLE 1
S55 Input Reverse Voltage VIN(rev) 6 Vdc 8 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
SOT−723
device. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected. t e XX M CASE 631AA
e [] 1 STYLE 1
SOT−1123
X M 1 CASE 524AA
STYLE 1
XXX = Specific Device Code
M = Date Code*
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **DTC123J/D** **1** © Semiconductor Components Industries, LLC, 2012 **March, 2017 − Rev. 5** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** **Table 1. ORDERING INFORMATION** |**Table 1. ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Part Marking**|**Package**|**Shipping**†| |MUN2235T1G|6M|SC−59
(Pb−Free)|3000 / Tape & Reel| |MMUN2235LT1G, NSVMMUN2235LT1G*|AA2|SOT−23
(Pb−Free)|3000 / Tape & Reel| |MUN5235T1G, SMUN5235T1G*|8M|SC−70/SOT−323
(Pb−Free)|3000 / Tape & Reel| |DTC123JET1G, NSVDTC123JET1G*|8M|SC−75
(Pb−Free)|3000 / Tape & Reel| |DTC123JM3T5G, NSVDTC123JM3T5G*|8M|SOT−723
(Pb−Free)|8000 / Tape & Reel| |NSBC123JF3T5G|V|SOT−1123
(Pb−Free)|8000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
300
250
200
(1) (2) (3) (4) (5)
150
100
50
0
−50 −25 0 25 50 75 100 125 150
AMBIENT TEMPERATURE ( ° C)
, POWER DISSIPATION (mW)
D
P
**----- End of picture text -----**
(1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm[2] , 1 oz. copper trace - (5) SOT−723; Minimum Pad **Figure 1. Derating Curve** **www.onsemi.com** **2** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**THERMAL CHARACTERISTICS (SC−59) (MUN2235)**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|230
338
1.8
2.7|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|540
370|°C/W| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)|R�JL|264
287|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−23) (MMUN2235L)**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|246
400
2.0
3.2|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|508
311|°C/W| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)|R�JL|174
208|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5235)**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|202
310
1.6
2.5|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|618
403|°C/W| |Thermal Resistance,
(Note 1)
Junction to Lead
(Note 2)|R�JL|280
332|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−75) (DTC123JE)**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|200
300
1.6
2.4|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|600
400|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−723) (DTC123JM3)**|||| |Total Device Dissipation
TA= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)|PD|260
600
2.0
4.8|mW
mW/°C| |Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)|R�JA|480
205|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. **www.onsemi.com** **3** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**THERMAL CHARACTERISTICS (SOT−1123) (NSBC123JF3)**|||| |Total Device Dissipation
TA= 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)|PD|254
297
2.0
2.4|mW
mW/°C| |Thermal Resistance,
(Note 3)
Junction to Ambient
(Note 4)|R�JA|493
421|°C/W| |Thermal Resistance, Junction to Lead
(Note 3)|R�JL|193|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. **Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) |**Table 3. ELECTRICAL CHARACTERISTICS**(TA= 25°C, unless otherwis|e noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Base Cutoff Current
(VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector−Emitter Cutoff Current
(VCE= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter−Base Cutoff Current
(VEB= 6.0 V, IC= 0)|IEBO|−|−|0.2|mAdc| |Collector−Base Breakdown Voltage
(IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector−Emitter Breakdown Voltage (Note 5)
(IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 5)
(IC= 5.0 mA, VCE= 10 V)|hFE|80|140|−|| |Collector�Emitter Saturation Voltage (Note 5)
(IC= 10 mA, IB= 1.0 mA)|VCE(sat)|−|−|0.25|Vdc| |Input Voltage (off)
(VCE= 5.0 V, IC= 100�A)|Vi(off)|−|0.6|0.5|Vdc| |Input Voltage (on)
(VCE= 0.3 V, IC= 5.0 mA)|Vi(on)|1.1|0.8|−|Vdc| |Output Voltage (on)
(VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off)
(VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|1.5|2.2|2.9|k�| |Resistor Ratio|R1/R2|0.038|0.047|0.056|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle � 2%. **www.onsemi.com** **4** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **TYPICAL CHARACTERISTICS MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3** **==> picture [491 x 590] intentionally omitted <==** **----- Start of picture text -----**
1 1000
IC/IB = 10 V CE = 10 V
75 ° C
75 ° C
0.1 100
TA = −25 ° C 25 ° C
−25 ° C 25 ° C
0.01 10
0.001 1
0 10 20 30 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain
3.6 100
25 ° C
3.2 f = 10 kHz
2.8 TIEA = 0 A = 25 ° C 10 75 ° C
2.4
1
2
1.6 TA = −25 ° C
0.1
1.2
0.8
0.01
0.4
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
10
75 ° C
1 25 ° C TA = −25 ° C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
, COLLECTOR−EMITTER VOLTAGE (V)
CE(sat)
V
, CAPACITANCE (pF)
ob
C
, COLLECTOR CURRENT (mA)
IC
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 6. Input Voltage vs. Output Current** **www.onsemi.com** **5** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **TYPICAL CHARACTERISTICS NSBC123JF3** **==> picture [491 x 602] intentionally omitted <==** **----- Start of picture text -----**
1 1000
IC/IB = 10 VCE = 10 V 25 ° C 150 ° C
25 ° C 100
150 ° C −55 ° C
0.1
10
−55 ° C
0.01 1
0 10 20 30 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain
2.4 100
f = 10 kHz 150 ° C
2 IE = 0 A
TA = 25 ° C 10
1.6 −55 ° C
1
1.2
25 ° C
0.1
0.8
0.4 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3
VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V)
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
100
10
25 ° C
−55 ° C
1
150 ° C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
, DC CURRENT GAIN
FE
h
, COLLECTOR−EMITTER VOLTAGE (V)
CE(sat)
V
, CAPACITANCE (pF)
ob
C
, COLLECTOR CURRENT (mA)
IC
, INPUT VOLTAGE (V)
in
V
**----- End of picture text -----**
**Figure 11. Input Voltage vs. Output Current** **www.onsemi.com** **6** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **SC−59** CASE 318D−04 ISSUE H **==> picture [409 x 154] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
HE 1 2 E A1A 0.011.00 0.061.15 0.101.30 0.0010.039 0.0450.002 0.0510.004
b 0.35 0.43 0.50 0.014 0.017 0.020
c 0.09 0.14 0.18 0.003 0.005 0.007
D 2.70 2.90 3.10 0.106 0.114 0.122
b E 1.30 1.50 1.70 0.051 0.059 0.067
e 1.70 1.90 2.10 0.067 0.075 0.083
e
L 0.20 0.40 0.60 0.008 0.016 0.024
H E 2.50 2.80 3.00 0.099 0.110 0.118
STYLE 1:
C PIN 1. BASE
A 2. EMITTER
3. COLLECTOR
L
A1
**----- End of picture text -----**
## **SOLDERING FOOTPRINT*** **==> picture [192 x 151] intentionally omitted <==** **----- Start of picture text -----**
0.95
0.95 0.037
0.037
2.4
0.094
1.0
0.039
0.8
SCALE 10:1
0.031 � inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **7** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [469 x 329] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
A1 SIDE VIEW SEE VIEW C c STYLE 6:
PIN 1. BASE
END VIEW 2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90 0.90
3X 0.80 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **8** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **==> picture [76 x 29] intentionally omitted <==** **----- Start of picture text -----**
SC−70 (SOT−323)
CASE 419−04
ISSUE N
**----- End of picture text -----**
||||**H**|||**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**|**A**
**D**
**e1**
**b**
**e**
**E**
**3**
**2**||||**c**
**L**
N|OTES:
1. DIM
2. CON|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
TROLLING DIMENSION: INCH.| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||| ||||||||||||||||||||||||| |||||**E**|||||||||||||||||||| ||||||||||||||||||**DIM**|**MILLIMETERS**|||**INCHES**||| |||||||||||||||||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| ||||||**1**|**3**||||**2**|||||||||||||| ||||||||||||||||||**A**|0.80|0.90|1.00|0.032|0.035|0.040| ||||||||||||||||||**A1**|0.00|0.05|0.10|0.000|0.002|0.004| ||||||||||||||||||**A2**|0.70 REF|||0.028 REF||| ||||||||||||||||||**b**|0.30|0.35|0.40|0.012|0.014|0.016| ||||||||||||||||||**c**|0.10|0.18|0.25|0.004|0.007|0.010| ||||||||||||||||||**D**|1.80|2.10|2.20|0.071|0.083|0.087| ||||||||||||||||||||||||| ||||||||||||||||||**E**|1.15|1.24|1.35|0.045|0.049|0.053| ||||||||||||||||||**e**|1.20|1.30|1.40|0.047|0.051|0.055| ||||||||||||||||||**e1**|0.65 BSC|||0.026 BSC||| ||||||||||||||||||**L**|0.20|0.38|0.56|0.008|0.015|0.022| |||||||||||||||||**L**|**HE**|2.00|2.10|2.40|0.079|0.083|0.095| ||||||||||||||||||STYLE 3
PIN 1
2
3|:
. BASE
. EMITTER
. COLLECTOR|||||| ||||||||||||||**A2**||||||||||| ||||||||||||||||||||||||| ||0.05 (0.002)||||||||||||||||||||||| ||||||**A1**||||||||||||||||||| ## **SOLDERING FOOTPRINT*** **==> picture [172 x 148] intentionally omitted <==** **----- Start of picture text -----**
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **9** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **==> picture [278 x 202] intentionally omitted <==** **----- Start of picture text -----**
SC−75/SOT−416
CASE 463
ISSUE G
−E−
2
3
e −D−
1
b 3 PL
0.20 (0.008) M D
HE 0.20 (0.008) E
C
A
L A1
SOLDERING FOOTPRINT*
**----- End of picture text -----**
**==> picture [158 x 144] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.80 0.90 0.027 0.031 0.035
A1 0.00 0.05 0.10 0.000 0.002 0.004
b 0.15 0.20 0.30 0.006 0.008 0.012
C 0.10 0.15 0.25 0.004 0.006 0.010
D 1.55 1.60 1.65 0.061 0.063 0.065
E 0.70 0.80 0.90 0.027 0.031 0.035
e 1.00 BSC 0.04 BSC
L 0.10 0.15 0.20 0.004 0.006 0.008
HE 1.50 1.60 1.70 0.060 0.063 0.067
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
**----- End of picture text -----**
**==> picture [178 x 135] intentionally omitted <==** **----- Start of picture text -----**
0.356
0.014
1.803 0.787
0.071 0.031
0.508
0.020 1.000
0.039
SCALE 10:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **10** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **==> picture [55 x 29] intentionally omitted <==** **----- Start of picture text -----**
SOT−723
CASE 631AA
ISSUE D
**----- End of picture text -----**
**==> picture [227 x 182] intentionally omitted <==** **----- Start of picture text -----**
−X−
D
b1 A
3 −Y−
E H E
1 2
2X b
C
2X e 0.08 X Y
SIDE VIEW
TOP VIEW
3X L
1
3X L2
BOTTOM VIEW
**----- End of picture text -----**
**==> picture [167 x 179] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
**----- End of picture text -----**
## **RECOMMENDED** **SOLDERING FOOTPRINT*** **==> picture [177 x 144] intentionally omitted <==** **----- Start of picture text -----**
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52 0.36
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **11** **MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3** ## **PACKAGE DIMENSIONS** **SOT−1123** CASE 524AA ISSUE C **==> picture [399 x 383] intentionally omitted <==** **----- Start of picture text -----**
D −X− NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Ke −Y− Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
1 3 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
E FINISH. MINIMUM LEAD THICKNESS IS THE
2 MINIMUM THICKNESS OF BASE MATERIAL.
coe 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
TOP VIEW
MILLIMETERS
A DIM MIN MAX
A 0.34 0.40
b 0.15 0.28
b1 0.10 0.20
c 0.07 0.17
D 0.75 0.85
c f T HE E 0.55 0.65
e 0.35 0.40
SIDE VIEW HE 0.95 1.05
L 0.185 REF
fot o L2 0.05 S 0.15
3X L2 b STYLE 1:PIN 1. BASE
0.08 X Y 2. EMITTER
, TE cm an 3. COLLECTOR
e
3X L
a 2X e b1 enail
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X 0.34
0.26
1
ral:
0.38 2X
r 0.20 aat PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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