# TVS Diode, TRANSZORB eSMP, Bidirectional, 243 V, DO-214AA (SMB), 2 Pins

![Product image](https://novapart.co/image/farnell:1749394RL/)

**URL**: https://novapart.co/products/SMP80MC-270/tvs-diode-transzorb-esmp-bidirectional-243-v-do
**SKU**: SMP80MC-270
**Manufacturer**: STMICROELECTRONICS
**Category**: Circuit Protection || TVS - Transient Voltage Suppressors || TVS Diodes
**Price**: €0.2520
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Product Range:TRANSZORB eSMP Series; TVS Polarity:Bidirectional; Reverse Stand-Off Voltage Vrwm:243V; Clamping Voltage Vc Max:-; Diode Case Style:DO-214AA; No. of Pins:2Pins; Breakdown Voltage

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Tvs Polarity | Bidirectional |
| Product Range | TRANSZORB eSMP |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | DO-214AA (SMB) |
| Clamping Voltage Max | - |
| Reverse Standoff Voltage | 243V |
| Maximum Breakdown Voltage | 270V |
| Minimum Breakdown Voltage | - |
| Operating Temperature Max | 150°C |
| Peak Pulse Power Dissipation | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1749394RL/)

**SMP80MC** 

Trisil™ for telecom equipment protection 

**==> picture [61 x 39] intentionally omitted <==**

## **Features** 

- Bidirectional crowbar protection 

- Voltage: range from 120 V to 320 V 

- Low VBO / VR ratio 

- Micro capacitance equal to 12 pF @ 50 V 

**==> picture [45 x 37] intentionally omitted <==**

**SMB (JEDEC DO-214AA)** 

- Low leakage current: IR = 2 µA max 

- Holding current: IH = 150 mA min. 

- Repetitive peak pulse current: IPP = 80 A (10/1000 µs) 

## **Benefits** 

- Trisils are not subject to ageing and provide a fail safe mode in short circuit for better protection. 

- Helps equipment meet main standards such as UL60950, IEC 950 / CSA C22.2 and UL1459. 

- Epoxy meets UL94, V0. 

- Package is JEDEC registered (DO-214AA). 

## **Complies with the following standards** 

- GR-1089 Core 

- ITU-T-K20/K21 

**==> picture [66 x 96] intentionally omitted <==**

## **Description** 

The SMP80MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission like ADSL2 and ADSL2+. 

- IEC 61000-4-5 

- TIA/EIA IS-968 

- UL497B recognized, UL file E136224 

## **Applications** 

Any sensitive equipment requiring protection against lightning strikes and power crossing: 

- Terminals (phone, fax, modem...) and central office equipment 

**TM:** Trisil is a trademark of STMicroelectronics. 

1/11 

February 2012 

Doc ID 9702 Rev 5 

_www.st.com_ 

**Characteristics** 

**SMP80MC** 

## **1 Characteristics** 

**Table 1. In compliance with the following standards** 

|**Standard**|**Peak surge**<br>**voltage**<br>**(V)**|**Waveform**<br>**voltage**|**Required**<br>**peak current**<br>**(A)**|**Current**<br>**waveform**|**Minimum serial**<br>**resistor to meet**<br>**standard (**Ω**)**|
|---|---|---|---|---|---|
|**GR-1089 Core**<br>**First level**|2500<br>1000|2/10 µs<br>10/1000 µs|500<br>100|2/10 µs<br>10/1000 µs|5<br>2.5|
|**GR-1089 Core**<br>**Second level**|5000|2/10 µs|500|2/10 µs|10|
|**GR-1089 Core**<br>**Intra-building**|1500|2/10 µs|100|2/10 µs|0|
|**ITU-T-K20/K21**|6000<br>1500|10/700 µs|150<br>37.5|5/310 µs|10<br>0|
|**ITU-T-K20**<br>**(IEC61000-4-2)**|8000<br>15000|1/60 ns|ESD contact discharge<br>ESD air discharge||0<br>0|
|**IEC61000-4-5**|4000<br>4000|10/700 µs<br>1.2/50 µs|100<br>100|5/310 µs<br>8/20 µs|0<br>0|
|**TIA/EIA IS-968,**<br>**lightning surge type A**|1500<br>800|10/160 µs<br>10/560 µs|200<br>100|10/160 µs<br>10/560 µs|2.5<br>0|
|**TIA/EIA IS-968,**<br>**lightning surge type B**|1000|9/720 µs|25|5/320 µs|0|



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**SMP80MC** 

**Characteristics** 

## **Table 2. Absolute ratings (Tamb = 25 °C)** 

|**Table 2.**|**Absolute ratings (Tamb = 25 °C)**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Value**|**Unit**|
|IPP|Repetitive peak pulse current (see_Figure 2_)|10/1000 µs<br>8/20 µs<br>10/560 µs<br>5/310 µs<br>10/160 µs<br>1/20 µs<br>2/10 µs|80<br>200<br>100<br>120<br>150<br>200<br>250|A|
|IFS|Fail-safe mode: maximum current(1)|8/20 µs|5|kA|
|ITSM|Non repetitive surge peak on-state current<br>(sinusoidal)|t = 0.2 s<br>t = 1 s<br>t = 2 s<br>t = 15 mn|14<br>8<br>6.5<br>2|A|
|I2t|I2t value for fusing|t = 16.6 ms<br>t = 20 ms|7.5<br>7.8|A2s|
|Tstg|Storage temperature range||-55 to 150|°C|
|Tj|Operating junction temperature range||-40 to 150||
|TL|Maximum lead temperature for soldering during 10 s.||260|°C|



1. In fail safe mode the device acts as a short circuit. 

## **Table 3. Thermal resistances** 

**==> picture [406 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Value Unit<br>Rth(j-a) Junction to ambient (with recommended footprint) 100  °C/W<br>R Junction to leads 20  °C/W<br>th(j-l)<br>Figure 1. Electrical characteristics - definitions (Tamb = 25 °C)<br>Symbol Parameter IPP I<br>VRM Stand-off voltage<br>VBO Breakover voltage<br>IRM Leakage current<br>IPP Peak pulse current IBO<br>IBO Breakover current IH<br>IH Holding current IRM V<br>VR Continuous reverse voltage<br>IR Leakage current at VR VRM VR VBO<br>C Capacitance<br>**----- End of picture text -----**<br>


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**Characteristics** 

**SMP80MC** 

**Table 4. Electrical characteristics - values (Tamb = 25 °C)** 

|**Types**|**IRM @ VRM**<br>**max.**|**IRM @ VRM**<br>**max.**|**IR** **@ VR**<br>**max.**<br>**µA**<br>**V**|**IR** **@ VR**<br>**max.**<br>**µA**<br>**V**|**Dynamic**<br>**VBO**<br>**(1)**<br>**max.**<br>**V**|**Static**<br>**VBO@ IBO**<br>**(2)**<br>**max.**<br>**max.**<br>**V**<br>**mA**|**Static**<br>**VBO@ IBO**<br>**(2)**<br>**max.**<br>**max.**<br>**V**<br>**mA**|**IH**<br>**(3)**<br>**min.**<br>**mA**|**C(4)**<br>**typ.**<br>**pF**|**C(5)**<br>**typ.**<br>**pF**|
|---|---|---|---|---|---|---|---|---|---|---|
||**µA**|**V**|||||||||
|SMP80MC-120|2|108|5|120|155|155|800|150|12|25|
|SMP80MC-140||126||140|180|180|||||
|SMP80MC-160||144||160|205|205|||||
|SMP80MC-200||180||200|255|255|||||
|SMP80MC-230||207||230|295|295|||||
|SMP80MC-270||243||270|345|345|||||
|SMP80MC-320||290||320|400|400|||||



1. See _Figure 10: Test circuit 1 for dynamic IBO and VBO parameters_ 

2. See _Figure 11: Test circuit 2 for IBO and VBO parameters_ 

3. See _Figure 12: Test circuit 3 for dynamic IH parameter_ 

4. VR = 50 V bias, VRMS = 1 V, F= 1 MHz 

5. VR = 2 V bias, VRMS = 1 V, F = 1 MHz 

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**SMP80MC** 

**Characteristics** 

**Figure 2. Pulse waveform** 

**Figure 3. Non repetitive surge peak on-state current versus overload duration** 

**==> picture [462 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A)<br>% I Repetitive peak pulse current 40<br>PP tr = rise time (µs) F=50Hz<br>tp = pulse duration time (µs) 35 Tj initial = 25°C<br>100<br>30<br>25<br>50 20<br>15<br>10<br>0 5<br>t<br>tr tp 0 t(s)<br>1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03<br>Figure 4. On-state voltage versus on-state  Figure 5. Relative variation of holding<br>current (typical values) current versus junction<br>temperature<br>IT(A)T(A)(A) IH[Tj] / IH[Tj=25°C]H[Tj] / IH[Tj=25°C][Tj] / IH[Tj=25°C]H[Tj=25°C][Tj=25°C]<br>100 2.0<br>Tj=25°C 1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>VT(V)T(V)(V) 0.2 Tj(°C)<br>10 0.0<br>0 1 2 3 4 5 6 7 8 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>**----- End of picture text -----**<br>


**==> picture [462 x 334] intentionally omitted <==**

**----- Start of picture text -----**<br>
IT(A)T(A)(A) IH[Tj] / IH[Tj=25°C]H[Tj] / IH[Tj=25°C][Tj] / IH[Tj=25°C]H[Tj=25°C][Tj=25°C]<br>100 2.0<br>Tj=25°C 1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>VT(V)T(V)(V) 0.2 Tj(°C)<br>10 0.0<br>0 1 2 3 4 5 6 7 8 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>Figure 6. Relative variation of breakover  Figure 7. Relative variation of leakage<br>voltage versus junction  current versus junction<br>temperature temperature (typical values)<br>VBO[Tj] / VBO[Tj=25°C] IR[Tj] / IR[Tj=25°C]<br>1.08 1.E+03<br>1.07 VR=243V<br>1.06<br>1.05<br>1.04<br>1.03 1.E+02<br>1.02<br>1.01<br>1.00<br>0.99 1.E+01<br>0.98<br>0.97<br>0.96<br>0.95 Tj(°C) Tj(°C)<br>0.94 1.E+00<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 25 50 75 100 125<br>**----- End of picture text -----**<br>


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**Characteristics** 

**SMP80MC** 

**==> picture [462 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Variation of thermal impedance  Figure 9. Relative variation of junction<br>junction to ambient versus pulse  capacitance versus reverse voltage<br>duration  applied (typical values)<br>Zth(j-a)/Rth(j-a) C [VR] / C [VR=2V]<br>1.0 1.2<br>0.90.8 Printed circuit board - FR4,copper thickness = 35µm,recommended pad layout 1.11.00.9 VOSCTj = 25°CF =1MHz= 1VRMS<br>0.7<br>0.8<br>0.6 0.7<br>0.5 0.6<br>0.4 0.5<br>0.4<br>0.3<br>0.3<br>0.2<br>0.2<br>0.1 tp(s) 0.1 VR(V)<br>0.0 0.0<br>1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 10 100 1000<br>**----- End of picture text -----**<br>


## **Figure 10. Test circuit 1 for dynamic IBO and VBO parameters** 

**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 V / µs, di/dt < 10 A / µs, Ipp = 80A<br>**----- End of picture text -----**<br>


**==> picture [283 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 Ω 45 Ω 83 Ω 46 µH<br>U 10 µF 66 Ω 470 Ω 0.36 nF<br>KeyTek 'System 2' generator with PN246I module<br>1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A<br>26 µH 250 Ω 47 Ω 46 µH<br>U 60 µF 12 Ω<br>KeyTek 'System 2' generator with PN246I module<br>**----- End of picture text -----**<br>


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**SMP80MC** 

**Characteristics** 

## **Figure 11. Test circuit 2 for IBO and VBO parameters** 

**==> picture [291 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>ton = 20ms R1 = 140 Ω<br>R2 = 240 Ω<br>220V 50Hz Vout DUT measurementVBO<br>1/4<br>IBO<br>measurement<br>TEST PROCEDURE<br>Pulse test duration (tp = 20ms):<br>● for Bidirectional devices = Switch K is closed<br>● for Unidirectional devices = Switch K is open<br>VOUT selection:<br>● Device with VBO < 200V ➔ VOUT = 250 VRMS, R1 = 140Ω<br>● Device with VBO ≥ 200V ➔ VOUT = 480 VRMS, R2 = 240Ω<br>**----- End of picture text -----**<br>


## **Figure 12. Test circuit 3 for dynamic IH parameter** 

**==> picture [265 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
R<br>Surge<br>generator<br>VBAT = - 48 V D.U.T<br>**----- End of picture text -----**<br>


This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. 

## **TEST PROCEDURE** 

**1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current** ➔ **IPP = 10A, 10/1000µs. 3/ The D.U.T. will come back off-state within 50ms maximum.** 

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**Ordering Information Scheme** 

**SMP80MC** 

## **2 Ordering Information Scheme** 

## **Figure 13. Ordering information scheme** 

**==> picture [294 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
SMP    80    MC   -   xxx<br>Trisil surface mount<br>Repetitive peak pulse current<br>80 = 80 A<br>Capacitance<br>MC = Micro capacitance<br>**----- End of picture text -----**<br>


**Voltage** 120 = 120 V 140 = 140 V 160 = 160 V 200 = 200 V 230 = 230 V 270 = 270 V 320 = 320 V 

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**SMP80MC** 

**Package information** 

## **3 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **Table 5. SMB dimensions** 

|**C**||||||**b**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**Millimeters**||**Inches**||
||||**E1**||**L**<br>**D**<br>**A1**<br>**A2**|||||||
|||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||||||||||
||||||||A1|1.90|2.45|0.075|0.096|
||||||||A2|0.05|0.20|0.002|0.008|
||||**E**||||b|1.95|2.20|0.077|0.087|
||||||||c|0.15|0.40|0.006|0.016|
|||||||||||||
|||||||||||||
||||||||E<br>|5.10<br>|5.60<br>|0.201<br>|0.220<br>|
|||||||||||||
||||||||E1|4.05|4.60|0.159|0.181|
||||||||D|3.30|3.95|0.130|0.156|
|||||||||||||
||||||||L|0.75|1.50|0.030|0.059|



**Figure 14. Footprint dimensions Figure 15. Marking layout[(1)] in mm (inches)** 

**==> picture [406 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.62 2.60 1.62<br>(0.064) (0.102) (0.064) Cathode bar ( unidirectional devices only )<br>2.18 e e: ECOPACK complianceXXX: Marking<br>(0.086) x x x Z:Y: ManufacturingYear location<br>WW: week<br>z y w w<br>5.84<br>(0.23)<br>**----- End of picture text -----**<br>


1. Marking layout can vary according to assembly location. 

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**Ordering information** 

**SMP80MC** 

## **4 Ordering information** 

## **Table 6. Ordering information** 

|**Part Number**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|SMP80MC-120|TP12|SMB|98 mg|2500|Tape and reel|
|SMP80MC-140|TP14|||||
|SMP80MC-160|TP16|||||
|SMP80MC-200|TP20|||||
|SMP80MC-230|TP23|||||
|SMP80MC-270|TP27|||||
|SMP80MC-320|TP32|||||



## **5 Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|September-2001|1|First issue.|
|11-May-2005|2|New types introduction.|
|20-Jun-2005|3|Qualification of new types|
|18-Jan-2007|4|Added product SMP80MC-320|
|09-Feb-2012|5|Added UL statement in_Complies with the following standards_|



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**SMP80MC** 

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