# Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 2 A
**URL**: https://novapart.co/products/SMMSD914T3G/small-signal-diode-single-100-v-200-ma-1-4-ns-2-a
**SKU**: SMMSD914T3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0270
**Stock**: 10+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-123 |
| Diode Configuration | Single |
| Forward Voltage Max | 1V |
| Forward Surge Current | 2A |
| Reverse Recovery Time | 4ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3606793/)
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~
## Switching Diode
## MMSD914, SMMSD914
## **Features**
- SOD−123 Surface Mount Package
## **SOD−123 CASE 425 PLASTIC**
- High Breakdown Voltage
- Fast Speed Switching Time
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
## **MAXIMUM RATINGS**
|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Continuous Reverse Voltage|VR|100|Vdc|
|Peak Forward Current|IF|200|mAdc|
|Peak Forward Surge Current|IFM(surge)|500|mAdc|
|Non−repetitive Peak
Forward Surge Current
Pulse Width =1 second
Pulse Width =1 micro second
~~ee~~|IFSM|1.0
2.0|A
A|
Pulse Width =1 second 1.0 A Pulse Width =1 micro second 2.0 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 425 mW ~~ee~~ (Note 1) TA = 25C Derate above 25C 3.4 mW/C ~~ee~~ Thermal Resistance, R JA C/W Junction−to−Ambient 290 ~~ee~~ Junction and Storage Temperature Range TJ, Tstg −55 to C +150 ~~eo~~
1 2 CATHODE ANODE
## **MARKING DIAGRAM**
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5D M
1 2
a | a :
**----- End of picture text -----**
5D = Specific Device Code M = Date Code = Pb−Free Package
(Note: Microdot may be in either location)
**ORDERING INFORMATION Device Package Shipping**[†] MMSD914T1G SOD−123 3,000 / Tape & Reel (Pb−Free) SMMSD914T1G SOD−123 3,000 / Tape & Reel (Pb−Free) MMSD914T3G SOD−123 10,000 / Tape & Reel (Pb−Free) SMMSD914T3G SOD−123 10,000 / Tape & Reel (Pb−Free) ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ~~eee~~
1. FR−5 = 1.0oz Cu, 1.0in[z] pad
> *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
**1**
Semiconductor Components Industries, LLC, 2012 **January, 2025 − Rev. 12**
**MMSD914T1/D**
**MMSD914, SMMSD914**
**ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted)
**Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** ~~GC~~ Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) 100 − Vdc Reverse Voltage Leakage Current IR (VR = 20 Vdc) − 25 nAdc (VR = 75 Vdc) − 5.0 Adc ~~ee GC~~ Forward Voltage (IF = 10 mAdc) VF ~~ee~~ − 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD − 4.0 pF ~~GC~~ Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 4.0 ns ~~a~~
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**----- Start of picture text -----**
820 Q
+10 V 2 k100 H IF 0.1 F “T ak tr t p a t IF
0.1 F 10% t rr t
| |
|____] DUT
50 OUTPUT 50 INPUT 90%
PULSE SAMPLING iR(REC) = 1 mA
GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k Q variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
**----- End of picture text -----**
**Figure 1. Recovery Time Equivalent Test Circuit**
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**MMSD914, SMMSD914**
**==> picture [486 x 394] intentionally omitted <==**
**----- Start of picture text -----**
100 10
[/_——} +} — +¥T- 4 f f ——__— a TA = 150 C
aAYAa ee ee ee) ee’ eee) ee ee | — 1.0 —a OO SS TA = 125 C
10
oo o?>/ FF a
pT TA = 85 C A 2 ee | TA -- 40 C a > a a | TA = 85 C es ee es e s
|ee eee aee eeA A eee ee eee[e |e Wwo 0.1 ——a eea a ee ee e e
1.0 TA = 55 C
a ar TA = 25 a C 0.01
ey a ee ee x ——
en ee a, Ltd _ SS SS SS SS
a ee ee ee ee ee ee ee e e eee OTT ETT NN NN
a a ee TA = 25 C a
0.1 a eyee) Ae eeee es e e e e ee eeeee ee ee 0.001 ———_—————————a a
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage Figure 3. Leakage Current
0.68
0.64
0.60
0.56 aNeeeeeeee
0.52
| | | || ht |
0 2 4 6 8
VR, REVERSE VOLTAGE (VOLTS)
IF, FORWARD CURRENT (mA)
CD, DIODE CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 4. Capacitance**
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOD−123 2−LEAD, 1.60x2.69x1.16** CASE 425 ISSUE H
DATE 29 FEB 2024
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Ө 1
Ө 1
ee
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## **GENERIC**
## **MARKING DIAGRAM***
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**----- Start of picture text -----**
XXXM
1
XXX = Specific Device Code
M = Date Code
= Pb−Free Package
**----- End of picture text -----**
(Note: Microdot may be in either location)
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: PIN 1. CATHODE 2. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42927B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123 2−LEAD, 1.60x2.69x1.16 PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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## Links
- [View this product on Novapart](https://novapart.co/products/SMMSD914T3G/small-signal-diode-single-100-v-200-ma-1-4-ns-2-a)
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- [Supplier page](https://es.farnell.com/on-semiconductor/smmsd914t3g/switching-diode-high-speed-100/dp/3606793)
---
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