# Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 225 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2628009/)

**URL**: https://novapart.co/products/SMMBTA92LT1G/bipolar-bjt-single-transistor-pnp-300-v-500-ma-225
**SKU**: SMMBTA92LT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0760
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:25hFE

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 50MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2628009/)

## MMBTA92L, SMMBTA92L, MMBTA93L 

## High Voltage Transistors **PNP Silicon** 

## **www.onsemi.com** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [69 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>© )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|**92**|**93**|**Unit**|
|Collector−Emitter Voltage|VCEO|−300|−200|Vdc|
|Collector−Base Voltage|VCBO|−300|−200|Vdc|
|Emitter−Base Voltage|VEBO|−5.0|−5.0|Vdc|
|Collector Current — Continuous|IC|−500||mAdc|



**MARKING** Collector−Base Voltage VCBO −300 −200 Vdc 3 **DIAGRAM** Emitter−Base Voltage VEBO −5.0 −5.0 Vdc 1 Collector Current — Continuous IC −500 mAdc 2 2x M **DEVICE MARKING SOT−23 (TO−236AF)** MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E **CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** 2x = Specific Device Code M = Date Code* Total Device Dissipation FR−5 Board PD 225 mW (Note 1) TA = 25 ° C = Pb−Free Package Derate above 25 ° C 1.8 mW/ ° C (*Note: Microdot may be in either location) Thermal Resistance, Junction to Ambient R JA 556 ° C/W *Date Code orientation and/or overbar mayvary depending upon manufacturing location. Total Device Dissipation (Note 2) PD 300 mW Alumina Substrate,[(2)] TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C **ORDERING INFORMATION** Thermal Resistance, Junction to Ambient R JA 417 ° C/W **Device Package Shipping**[†] Junction and Storage Temperature TJ, Tstg −55 to ° C MMBTA92LT1G SOT−23 3000 / Tape & Reel +150 ~~=r~~ (Pb−Free) Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBTA92LT1G SOT−23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. MMBTA92LT3G SOT−23 10000 / Tape & Reel 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (Pb−Free) SMMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) MMBTA93LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~eee ==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 **1** Publication Order Number: **October, 2016 − Rev. 11 MMBTA92LT1/D** 

Publication Order Number: 

**MMBTA92LT1/D** 

## **MMBTA92L, SMMBTA92L, MMBTA93L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 3)<br>(IC= −1.0 mAdc, IB= 0)<br>MMBTA92, SMMBTA92<br>MMBTA93|V(BR)CEO|−300<br>−200|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= −100�Adc, IE= 0)<br>MMBTA92, SMMBTA92<br>MMBTA93|V(BR)CBO|−300<br>−200|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −100�Adc, IC= 0)|V(BR)EBO|−5.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= −200 Vdc, IE= 0)<br>MMBTA92, SMMBTA92<br>(VCB= −160 Vdc, IE= 0)<br>MMBTA93|ICBO|−<br>−|−0.25<br>−0.25|�Adc|
|Emitter Cutoff Current<br>(VEB= −3.0 Vdc, IC= 0)|IEBO|−|−0.1|�Adc|
|**ON CHARACTERISTICS**(Note 3)|||||
|DC Current Gain<br>(IC= −1.0 mAdc, VCE= −10 Vdc)<br>Both Types<br>(IC= −10 mAdc, VCE= −10 Vdc)<br>Both Types<br>(IC= −30 mAdc, VCE= −10 Vdc)<br>MMBTA92, SMMBTA92<br>MMBTA93|hFE|25<br>40<br>25<br>25|−<br>−<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)<br>MMBTA92, SMMBTA92<br>MMBTA93|VCE(sat)|−<br>−|−0.5<br>−0.5|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= −20 mAdc, IB= −2.0 mAdc)|VBE(sat)|−|−0.9|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain — Bandwidth Product<br>(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)|fT|50|−|MHz|
|Collector−Base Capacitance<br>(VCB= −20 Vdc, IE= 0, f = 1.0 MHz)<br>MMBTA92, SMMBTA92<br>MMBTA93|Ccb|−<br>−|6.0<br>8.0|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 

**==> picture [484 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>TJ = +125°C VCE = 10 Vdc<br>250<br>200<br>25°C<br>150<br>-55°C<br>100<br>50<br>0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**www.onsemi.com** 

**2** 

**MMBTA92L, SMMBTA92L, MMBTA93L** 

**==> picture [238 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Cib @ 1MHz<br>10<br>Ccb @ 1MHz<br>1.0<br>0.1<br>0.1 1.0 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 2. Capacitance** 

**==> picture [235 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>130<br>110<br>90<br>70<br>50 TJ = 25 ° C<br>VCE = 20 Vdc<br>30 F = 20 MHz<br>10<br>1 3 5 7 9 11 13 15 17 19 21<br>IC, COLLECTOR CURRENT (mA)<br>f�, CURRENT-GAIN — BANDWIDTH (MHz)T<br>**----- End of picture text -----**<br>


**Figure 3. Current−Gain − Bandwidth** 

**==> picture [241 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0.1 1.0 10 100<br>IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 

**Figure 4. “ON” Voltages** 

**==> picture [245 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>1.0 s 100  � s 10  � s<br>100 ms<br>100<br>10 ms<br>1.0 ms<br>10<br>Single Pulse Test TA = 25 ° C<br>1<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Safe Operating Area** 

**www.onsemi.com** 

**3** 

**MMBTA92L, SMMBTA92L, MMBTA93L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [462 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>END VIEW PIN 1.2. EMITTERBASE<br>3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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