# Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 225 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2533348/)

**URL**: https://novapart.co/products/SMMBTA06LT1G/bipolar-bjt-single-transistor-npn-80-v-500-ma-225
**SKU**: SMMBTA06LT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0400
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transist

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2533348/)

## MMBTA05L, MMBTA06L 

## Driver Transistors 

## **NPN Silicon** 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **www.onsemi.com** 

COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE **MAXIMUM RATINGS** ~~&~~ ) 2 **Rating Symbol Value Unit** EMITTER Collector−Emitter Voltage VCEO Vdc MMBTA05L 60 3 MMBTA06L 80 Collector−Base Voltage VCBO Vdc 1 MMBTA05L 60 2 MMBTA06L 80 **SOT−23** Emitter−Base Voltage VEBO 4.0 Vdc **CASE 318** Collector Current − Continuous IC 500 mAdc **STYLE 6** Electrostatic Discharge ESD HBM Class 3B MM Class C **MARKING DIAGRAMS** CDM Class IV ~~= "~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1H  M 1GM  M **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** MMBTA05LT1 MMBTA06LT1, Total Device Dissipation FR−5 PDD 225 mW SMMBTA06L Board (Note 1) TA = 25A = 25 = 25 ° C 1H, 1GM = Specific Device Code Derate above 25 ° C 1.8 mW/ ° C M = Date Code* ~~LE~~ Thermal Resistance, R JA 556 ° C/W = Pb−Free Package Junction−to−Ambient (Note: Microdot may be in either location) ~~ee~~ *Date Code orientation and/or overbar may Total Device Dissipation Alumina PDD 300 mW vary depending upon manufacturing location. 

**Characteristic Symbol Max Unit** Total Device Dissipation FR−5 PDD 225 mW Board (Note 1) TA = 25A = 25 = 25 ° C Derate above 25 ° C 1.8 mW/ ° C ~~LE~~ Thermal Resistance, R JA 556 ° C/W Junction−to−Ambient ~~ee~~ Total Device Dissipation Alumina PDD 300 mW Substrate, (Note 2) TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C ~~—~~ Thermal Resistance, R JA 417 ° C/W Junction−to−Ambient Junction and Storage Temperature TJ, Tstg −55 to +150 ° C 1. ~~Ep~~ FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **MMBTA05LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2016 − Rev. 10** 

## **MMBTA05L, MMBTA06L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 3)<br>(IC= 1.0 mAdc, IB= 0)<br>MMBTA05L<br>MMBTA06L|V(BR)CEO|60<br>80|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 100�Adc, IC= 0)|V(BR)EBO|4.0|−|Vdc|
|Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)|ICES|−|0.1|�Adc|
|Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>MMBTA05L<br>(VCB= 80 Vdc, IE= 0)<br>MMBTA06L|ICBO|−<br>−|0.1<br>0.1|�Adc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= 10 mAdc, VCE= 1.0 Vdc)<br>(IC= 100 mAdc, VCE= 1.0 Vdc)|hFE|100<br>100|−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 100 mAdc, IB= 10 mAdc)|VCE(sat)|−|0.25|Vdc|
|Base−Emitter On Voltage<br>(IC= 100 mAdc, VCE= 1.0 Vdc)|VBE(on)|−|1.2|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 4)<br>(IC= 10 mA, VCE= 2.0 V, f = 100 MHz)|fT|100|−|MHz|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 

4. fT is defined as the frequency at which |hfe| extrapolates to unity. 

**==> picture [482 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
TURN-ON TIME TURN-OFF TIME<br>-1.0 V VCC +VBB VCC<br>+40 V +40 V<br>5.0 �s 100 RL 100 RL<br>+10 V OUTPUT OUTPUT<br>Vin RB Vin RB<br>0<br>tr = 3.0 ns 5.0 �F * CS � 6.0 pF 5.0 �F * CS � 6.0 pF<br>100 100<br>5.0 �s<br>tr = 3.0 ns<br>**----- End of picture text -----**<br>


- *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 

**Figure 1. Switching Time Test Circuits** 

**www.onsemi.com** 

**2** 

**MMBTA05L, MMBTA06L** 

**==> picture [492 x 622] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 100<br>VCE = 2.0 V Cibo TA = 25 ° C<br>TA = 25 ° C<br>100 10 Cobo<br>10 1<br>1 10 100 1000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 2. Current Gain Bandwidth Product vs. Figure 3. Capacitance<br>Collector Current<br>1.0 k 1000<br>700 TA = 150 ° C VCE = 1.0 V<br>500<br>300 ts TA = 25 ° C<br>200<br>100 100 TA = −55 ° C<br>70 tf<br>50<br>VCC = 40 V<br>30 IC/IB = 10 tr<br>20 IB1 = IB2<br>TJ = 25°C td @ VBE(off) = 0.5 V<br>10<br>10<br>5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 4. Switching Time Figure 5.  DC Current Gain vs. Collector<br>Current<br>1 1.2<br>IC/IB = 10 1.1 IC/IB = 10<br>1.0<br>0.9 TA = −55 ° C<br>TA = 150 ° C 0.8<br>0.1 0.7<br>TA = 25 ° C 0.6 TA = 25 ° C<br>0.5<br>0.4<br>TA = −55 ° C 0.3 TA = 150 ° C<br>0.01 0.2<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>PRODUCT (MHz)<br>C, CAPACITANCE (pF)<br>, CURRENT GAIN BANDWIDTH<br>ftau<br>t, TIME (ns)<br>, DC CURRENT GAIN<br>fe<br>h<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Collector Emitter Saturation Voltage vs. Collector Current** 

**Figure 7. Base Emitter Saturation Voltage vs. Collector Current** 

**www.onsemi.com** 

**3** 

**MMBTA05L, MMBTA06L** 

**==> picture [492 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.1 1.0<br>0.91 VCE = 1 V TA = −55 ° C 0.8 50 mAIC = 100 mAIC = IC = TA = 25 ° C<br>250 mA<br>0.8 IC =<br>0.7 TA = 25 ° C 0.6 500 mA<br>0.6<br>0.5 0.4 IC =<br>0.4 TA = 150 ° C 10 mA<br>0.3 0.2<br>0.2<br>0.1 0<br>0.1 1 10 100 1000 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 8. Base Emitter Turn−ON Voltage vs. Figure 9. Saturation Region<br>Collector Current<br>−0.8 10000<br>MMBTA06L<br>10 ms<br>100 ms<br>−1.2<br>1000<br>1 ms<br>1 s<br>−1.6 Thermal Limit<br>100<br>−2.0 R � VB for VBE<br>10<br>−2.4<br>Single Pulse at TA = 25 ° C<br>−2.8 1<br>0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 10. Base−Emitter Temperature Figure 11. Safe Operating Area<br>Coefficient<br>10000<br>MMBTA05L 100 ms<br>10 ms<br>1000<br>1 ms<br>1 s<br>100 Thermal Limit<br>10<br>Single Pulse at TA = 25 ° C<br>1<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>, COLLECTOR−EMITTER<br>, BASE−EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>BE(on)<br>V<br>C)<br>°<br>, COLLECTOR CURRENT (mA)<br>IC<br>, TEMPERATURE COEFFICIENT (mV/<br>VB<br>�<br>R<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 12. Safe Operating Area** 

**www.onsemi.com** 

**4** 

**MMBTA05L, MMBTA06L** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MMBTA05LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|NSVMMBTA05LT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBTA05LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBTA06LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SMMBTA06LT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|MMBTA06LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SMMBTA06LT3G*|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**www.onsemi.com** 

**5** 

**MMBTA05L, MMBTA06L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [462 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>END VIEW PIN 1.2. EMITTERBASE<br>3. COLLECTOR<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com MMBTA05LT1/D** 

## **LITERATURE FULFILLMENT** : 

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**6** 



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