# Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:2845333/)

**URL**: https://novapart.co/products/SMMBT3906WT1G/bipolar-bjt-single-transistor-pnp-40-v-200-ma-150
**SKU**: SMMBT3906WT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0270
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:150mW; DC Collector Current:-200mA; DC Current Gain hFE:30h

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 250MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845333/)

## MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP 

## General Purpose Transistors **NPN and PNP Silicon** 

## **www.onsemi.com** 

**==> picture [75 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>& )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [470 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|3|SC−70 (SOT−323)|
|CASE 419|
|Compliant|1|
|&|2|STYLE 3|
|MAXIMUM RATINGS|
|Rating|Symbol|Value|Unit|
|MARKING DIAGRAM|
|Collector−Emitter Voltage|VCEO|Vdc|
|MMBT3904WT1, SMMBT3904WT1|40|
|MMBT3906WT1, SMMBT3906WT1|−40|
|xx M|
|Collector−Base Voltage|VCBO|Vdc|
|MMBT3904WT1, SMMBT3904WT1|60|
|MMBT3906WT1, SMMBT3906WT1|−40|1|
|Emitter−Base Voltage|VEBO|Vdc|xx|= AM for MMBT3904WT1,|
|MMBT3904WT1, SMMBT3904WT1|6.0|SMMBT3904WT|
|MMBT3906WT1, SMMBT3906WT1|−5.0|= 2A for MMBT3906WT1,|
|SMMBT3906WT1|
|Collector Current − Continuous|IC|mAdc|M|= Date Code*|
|MMBT3904WT1, SMMBT3904WT1|200|
|MMBT3906WT1, SMMBT3906WT1|−200|=|Pb−Free Package|
|os|
|(Note: Microdot may be in either location)|
|THERMAL CHARACTERISTICS|
|*Date Code orientation may vary depending up-|
|Characteristic|Symbol|Max|Unit|on manufacturing location.|
|Total Device Dissipation (Note 1)|PD|150|mW|
|@TA = 25|°|C|
|ORDERING INFORMATION|
|Thermal Resistance, Junction−to−Ambient|R|JA|833|°|C/W|
|Junction and Storage Temperature|TJ, Tstg|−55 to +150|°|C|Device|Package|Shipping|

**----- End of picture text -----**<br>


*Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] MMBT3904WT1G, SC−70/ 3000 / Tape & SMMBT3904WT1G SOT−323 Reel (Pb−Free) MMBT3906WT1G, SC−70/ 3000 / Tape & SMMBT3906WT1G SOT−323 Reel (Pb−Free) ~~=a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **November, 2015 − Rev. 9** 

**MMBT3904WT1/D** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 2)<br>(IC= 1.0 mAdc, IB= 0)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= −1.0 mAdc, IB= 0)<br>MMBT3906WT1, SMMBT3906WT1|V(BR)CEO|40<br>−40|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 10�Adc, IE= 0)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= −10�Adc, IE= 0)<br>MMBT3906WT1, SMMBT3906WT1|V(BR)CBO|60<br>−40|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)<br>MMBT3904WT1, SMMBT3904WT1<br>(IE= −10�Adc, IC= 0)<br>MMBT3906WT1, SMMBT3906WT1|V(BR)EBO|6.0<br>−5.0|−<br>−|Vdc|
|Base Cutoff Current<br>(VCE= 30 Vdc, VEB= 3.0 Vdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −30 Vdc, VEB= −3.0 Vdc)<br>MMBT3906WT1, SMMBT3906WT1|IBL|−<br>−|50<br>−50|nAdc|
|Collector Cutoff Current<br>(VCE= 30 Vdc, VEB= 3.0 Vdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −30 Vdc, VEB= −3.0 Vdc)<br>MMBT3906WT1, SMMBT3906WT1|ICEX|−<br>−|50<br>−50|nAdc|
|**ON CHARACTERISTICS**(Note 2)|||||
|DC Current Gain<br>(IC= 0.1 mAdc, VCE= 1.0 Vdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= 1.0 mAdc, VCE= 1.0 Vdc)<br>(IC= 10 mAdc, VCE= 1.0 Vdc)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 100 mAdc, VCE= 1.0 Vdc)<br>(IC= −0.1 mAdc, VCE= −1.0 Vdc)<br>MMBT3906WT1, SMMBT3906WT1<br>(IC= −1.0 mAdc, VCE= −1.0 Vdc)<br>(IC= −10 mAdc, VCE= −1.0 Vdc)<br>(IC= −50 mAdc, VCE= −1.0 Vdc)<br>(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|40<br>70<br>100<br>60<br>30<br>60<br>80<br>100<br>60<br>30|−<br>−<br>300<br>−<br>−<br>−<br>−<br>300<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>(IC= −10 mAdc, IB= −1.0 mAdc)<br>MMBT3906WT1, SMMBT3906WT1<br>(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−<br>−<br>−<br>−|0.2<br>0.3<br>−0.25<br>−0.4|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>(IC= −10 mAdc, IB= −1.0 mAdc)<br>MMBT3906WT1, SMMBT3906WT1<br>(IC= −50 mAdc, IB= −5.0 mAdc)|VBE(sat)|0.65<br>−<br>−0.65<br>−|0.85<br>0.95<br>−0.85<br>−0.95|Vdc|



2. Pulse Test: Pulse Width � 300 � s; Duty Cycle � 2.0%. 

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**2** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Continued) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Continued)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Continued)|||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)<br>MMBT3906WT1, SMMBT3906WT1||fT|300<br>250|−<br>−|MHz|
|Output Capacitance<br>(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCB= −5.0 Vdc, IE= 0, f = 1.0 MHz)<br>MMBT3906WT1, SMMBT3906WT1||Cobo|−<br>−|4.0<br>4.5|pF|
|Input Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VEB= −0.5 Vdc, IC= 0, f = 1.0 MHz)<br>MMBT3906WT1, SMMBT3906WT1||Cibo|−<br>−|8.0<br>10.0|pF|
|Input Impedance<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>MMBT3906WT1, SMMBT3906WT1||hie|1.0<br>2.0|10<br>12|k�|
|Voltage Feedback Ratio<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>MMBT3906WT1, SMMBT3906WT1||hre|0.5<br>0.1|8.0<br>10|X 10−4|
|Small−Signal Current Gain<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>MMBT3906WT1, SMMBT3906WT1||hfe|100<br>100|400<br>400|−|
|Output Admittance<br>(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>MMBT3906WT1, SMMBT3906WT1||hoe|1.0<br>3.0|40<br>60|�mhos|
|Noise Figure<br>(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCE= −5.0 Vdc, IC= −100�Adc, RS= 1.0 k�, f = 1.0 kHz)<br>MMBT3906WT1, SMMBT3906WT1||NF|−<br>−|5.0<br>4.0|dB|
|**SWITCHING CHARACTERISTICS**||||||
|**Characteristic**|**Condition**|**Symbol**|**Min**|**Max**|**Unit**|
|Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCC= −3.0 Vdc, VBE= 0.5 Vdc)<br>MMBT3906WT1, SMMBT3906WT1|td|−<br>−|35<br>35|ns|
|Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(IC= −10 mAdc, IB1= −1.0 mAdc)<br>MMBT3906WT1, SMMBT3906WT1|tr|−<br>−|35<br>35||
|Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(VCC= −3.0 Vdc, IC= −10 mAdc)<br>MMBT3906WT1, SMMBT3906WT1|ts|−<br>−|200<br>225|ns|
|Fall Time|(IB1= IB2= 1.0 mAdc)<br>MMBT3904WT1, SMMBT3904WT1<br>(IB1= IB2= −1.0 mAdc)<br>MMBT3906WT1, SMMBT3906WT1|tf|−<br>−|50<br>75||



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**3** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** 

**==> picture [486 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
+3 V +3 V<br>DUTY CYCLE = 2% 10 < t1 < 500 �s t1<br>+10.9 V<br>300 ns +10.9 V 275 DUTY CYCLE = 2% 275<br>10 k 10 k<br>0<br>-�0.5 V<br>< 1 ns CS < 4 pF* 1N916 CS < 4 pF*<br>-�9.1 V<br>< 1 ns<br>**----- End of picture text -----**<br>


* Total shunt capacitance of test jig and connectors 

**Figure 1. Delay and Rise Time Equivalent Test Circuit** 

**Figure 2. Storage and Fall Time Equivalent Test Circuit** 

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**4** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** 

## **MMBT3904WT1, SMMBT3904WT1** 

## **TYPICAL TRANSIENT CHARACTERISTICS** 

**==> picture [489 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 25°C<br>TJ = 125°C<br>500 500<br>300 IC/IB = 10 300 VCC = 40 V<br>200 200 IC/IB = 10<br>100 100<br>70 tr @ VCC = 3.0 V 70<br>50 50<br>30 30<br>40 V<br>20 20<br>15 V<br>10 MMBT3904WT1 10<br>MMBT3904WT1<br>7 td @ VOB = 0 V 2.0 V 7<br>5 5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Turn−On Time Figure 4. Rise Time<br>500 500<br>′<br>300 t s = ts -  [1] /8 tf 300 VCC = 40 V<br>200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2<br>IC/IB = 20<br>100 100<br>70 70<br>50 IC/IB = 20 50<br>30 IC/IB = 10 30 IC/IB = 10<br>20 20<br>10 10<br>MMBT3904WT1 MMBT3904WT1<br>7 7<br>5 5 2 0 0<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 5. Storage Time Figure 6. Fall Time<br>TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS<br>(VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)<br>12 14<br>SOURCE RESISTANCE = 200 � f = 1.0 kHz<br>10 IC = 1.0 mA 12 IC = 1.0 mA<br>10 IC = 0.5 mA<br>8 SOURCE RESISTANCE = 200 �<br>IC = 0.5 mA IC = 50 �A<br>8<br>6<br>SOURCE RESISTANCE = 1.0 k IC = 100 �A<br>IC = 50 �A 6<br>4<br>4<br>2<br>SOURCE RESISTANCE = 500 � 2<br>IC = 100 �A MMBT3904WT1 MMBT3904WT1<br>0 0<br>0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100<br>f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)<br>Figure 7. Noise Figure Figure 8. Noise Figure<br>TIME (ns)<br>r<br>t  , RISE TIME (ns)<br>f<br>t  , FALL TIME (ns)<br>t  , STORAGE TIME (ns)′s<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


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**5** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** 

## **h PARAMETERS** 

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C) 

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**----- Start of picture text -----**<br>
300 100<br>MMBT3904WT1 50 MMBT3904WT1<br>200<br>20<br>10<br>100<br>70 5<br>50<br>2<br>30 1<br>0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Current Gain Figure 10. Output Admittance<br>20 10<br>7.0<br>10 MMBT3904WT1 MMBT3904WT1<br>5.0<br>5.0<br>3.0<br>2.0<br>2.0<br>1.0<br>1.0<br>0.5<br>0.7<br>0.2 0.5<br>0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>�<br>fe<br>h    , CURRENT GAIN<br>oe<br>h    , OUTPUT ADMITTANCE (   mhos)<br>-4<br>ie<br>h    , INPUT IMPEDANCE (k OHMS)<br>re<br>h    , VOLTAGE FEEDBACK RATIO (X 10    )<br>**----- End of picture text -----**<br>


**Figure 11. Input Impedance** 

**Figure 12. Voltage Feedback Ratio** 

**TYPICAL STATIC CHARACTERISTICS** 

**==> picture [487 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCE = 1 V<br>TJ = 150°C<br>25°C<br>-�55°C<br>100<br>MMBT3904WT1<br>10<br>1.0 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 13. DC Current Gain** 

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**6** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** 

**==> picture [491 x 586] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>MMBT3904WT1 T J  = 25°C<br>0.8<br>IC = 1.0 mA 10 mA 30 mA 100 mA<br>0.6<br>0.4<br>0.2<br>0<br>0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IB, BASE CURRENT (mA)<br>Figure 14. Collector Saturation Region<br>0.9 1.4<br>0.8 IC/IB = 10 IC/IB = 10<br>1.2<br>0.7 150 ° C<br>0.6 25 ° C 1.0<br>0.5 −55 ° C<br>0.8<br>0.4 −55 ° C 25 ° C<br>0.3 0.6<br>0.2 150 ° C<br>0.4<br>0.1<br>0 0.2<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs.<br>vs. Collector Current Collector Current<br>1.4<br>VCE = 1 V<br>1.2<br>1.0<br>−55 ° C<br>0.8<br>25 ° C<br>0.6<br>0.4 150 ° C<br>0.2<br>0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A)<br>CE<br>V     , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 17. Base Emitter Voltage vs. Collector Current** 

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**7** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** 

**==> picture [242 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>MMBT3904WT1<br>0.5 +25°C TO +125°C<br>�VC FOR VCE(sat)<br>0 -�55°C TO +25°C<br>-�0.5<br>-�55°C TO +25°C<br>-�1.0<br>+25°C TO +125°C<br>-�1.5 �VB FOR VBE(sat)<br>-�2.0<br>0 20 40 60 80 100 120 140 160 180 200<br>IC, COLLECTOR CURRENT (mA)<br>°<br>COEFFICIENT (mV/  C)<br>**----- End of picture text -----**<br>


**Figure 18. Temperature Coefficients** 

**==> picture [233 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 25°C<br>TJ = 125°C<br>10<br>MMBT3904WT1<br>7.0<br>5.0<br>Cibo<br>3.0<br>2.0 Cobo<br>1.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40<br>REVERSE BIAS VOLTAGE (VOLTS)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 19. Capacitance** 

**==> picture [490 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1<br>100 mS 10 mS<br>VCE = 1 V<br>TA = 25 ° C 1 mS<br>1 S<br>0.1<br>100<br>Thermal Limit<br>0.01<br>10 0.001<br>0.1 1 10 100 1000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>PRODUCT (MHz)<br>, COLLECTOR CURRENT (A)<br>, CURRENT−GAIN−BANDWIDTH IC<br>fT<br>**----- End of picture text -----**<br>


**Figure 20. Current Gain Bandwidth Product vs. Collector Current** 

**Figure 21. Safe Operating Area** 

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**8** 

**MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** 

## **MMBT3906WT1, SMMBT3906WT1** 

**==> picture [484 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 V 3 V<br>< 1 ns<br>+�9.1 V<br>275 275<br>< 1 ns<br>10 k 10 k<br>0<br>CS < 4 pF* 1N916 CS < 4 pF*<br>+10.6 V<br>300 ns 10 < t1 < 500 �s<br>DUTY CYCLE = 2% t1 10.9 V<br>DUTY CYCLE = 2%<br>**----- End of picture text -----**<br>


* Total shunt capacitance of test jig and connectors 

**Figure 22. Delay and Rise Time Equivalent Test Circuit** 

**Figure 23. Storage and Fall Time Equivalent Test Circuit** 

## **TYPICAL TRANSIENT CHARACTERISTICS** 

TJ = 25°C TJ = 125°C 

**==> picture [488 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
500 500<br>300 MMBT3906WT1 IC/IB = 10 300 MMBT3906WT1 VCC = 40 V<br>200 200 IB1 = IB2<br>IC/IB = 20<br>100 100<br>70 70<br>50 tr @ VCC = 3.0 V 50<br>30 15 V 30 IC/IB = 10<br>20 20<br>40 V<br>10 2.0 V 10<br>7 7<br>td @ VOB = 0 V<br>5 5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 24. Turn−On Time<br>Figure 25. Fall Time<br>TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS<br>NOISE FIGURE VARIATIONS<br>(VCE = −5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)<br>5.0 12<br>SOURCE RESISTANCE = 200 � f = 1.0 kHz IC = 1.0 mA<br>IC = 1.0 mA 10<br>4.0<br>SOURCE RESISTANCE = 200 � IC = 0.5 mA<br>IC = 0.5 mA 8.0<br>3.0<br>SOURCE RESISTANCE = 2.0 k<br>6.0<br>IC = 50 �A<br>2.0<br>4.0<br>IC = 50 �A<br>1.0 SOURCE RESISTANCE = 2.0 k 2.0 IC = 100 �A<br>IC = 100 �A<br>MMBT3906WT1<br>MMBT3906WT1<br>0 0<br>0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100<br>f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k�)<br>TIME (ns) f<br>t  , FALL TIME (ns)<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 26.** 

**Figure 27.** 

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**9** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** 

## **h PARAMETERS** 

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25 ° C) 

**==> picture [489 x 594] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 100<br>MMBT3906WT1 70 MMBT3906WT1<br>50<br>200<br>30<br>100 20<br>70<br>10<br>50<br>7.0<br>30 5.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 28. Current Gain Figure 29. Output Admittance<br>20 10<br>MMBT3906WT1 7.0 MMBT3906WT1<br>10<br>7.0 5.0<br>5.0<br>3.0<br>3.0<br>2.0<br>2.0<br>1.0<br>0.7<br>1.0<br>0.5<br>0.7<br>0.3<br>0.2 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 30. Input Impedance Figure 31. Voltage Feedback Ratio<br>STATIC CHARACTERISTICS<br>1000<br>VCE = 1 V<br>TJ = 150°C<br>25°C<br>-�55°C<br>100<br>MMBT3906WT1<br>10<br>1.0 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>�<br>hfe, CURRENT GAIN<br>oe<br>h    , OUTPUT ADMITTANCE (   mhos)<br>-4<br>)Ω<br>ie<br>h    , INPUT IMPEDANCE (k<br>re<br>h    , VOLTAGE FEEDBACK RATIO (X 10    )<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 32. DC Current Gain** 

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**10** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** 

**==> picture [491 x 586] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>MMBT3906WT1 T J  = 25°C<br>0.8<br>IC = 1.0 mA 10 mA 30 mA 100 mA<br>0.6<br>0.4<br>0.2<br>0<br>0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IB, BASE CURRENT (mA)<br>Figure 33. Collector Saturation Region<br>0.50 1.4<br>0.45 IC/IB = 10 IC/IB = 10<br>0.40 150 ° C 1.2<br>0.35<br>1.0<br>0.30 25 ° C −55 ° C<br>0.25 0.8<br>−55 ° C 25 ° C<br>0.20<br>0.6<br>0.15<br>0.10 150 ° C<br>0.4<br>0.05<br>0 0.2<br>0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 34. Collector Emitter Saturation Voltage Figure 35. Base Emitter Saturation Voltage vs.<br>vs. Collector Current Collector Current<br>1.4<br>VCE = 1 V<br>1.2<br>1.0<br>−55 ° C<br>0.8<br>25 ° C<br>0.6<br>0.4 150 ° C<br>0.2<br>0.0001 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A)<br>CE<br>V     , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>, BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 36. Base Emitter Voltage vs. Collector Current** 

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**11** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** 

**==> picture [490 x 419] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 25°C<br>TJ = 125°C<br>1.0 10<br>MMBT3906WT1<br>7.0<br>0.5<br>�VC FOR VCE(sat) +25°C TO +125°C<br>0 -�55°C TO +25°C 5.0 Cobo<br>Cibo<br>-0.5 MMBT3906WT1 3.0<br>+25°C TO +125°C<br>-1.0<br>�VS FOR VBE(sat) -�55°C TO +25°C 2.0<br>-1.5<br>-2.0 1.0<br>0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40<br>IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS)<br>Figure 37. Temperature Coefficients Figure 38. Capacitance<br>1000 1<br>100 mS 10 mS<br>VCE = 1 V<br>TA = 25 ° C<br>1 mS<br>0.1<br>1 S<br>100<br>Thermal Limit<br>0.01<br>10 0.001<br>0.1 1 10 100 1000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Figure 39. Current Gain Bandwidth Product Figure 40. Safe Operating Area<br>C)°<br>CAPACITANCE (pF)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>PRODUCT (MHz)<br>, COLLECTOR CURRENT (A)<br>, CURRENT−GAIN−BANDWIDTH IC<br>fT<br>**----- End of picture text -----**<br>


**Figure 39. Current Gain Bandwidth Product vs. Collector Current** 

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**12** 

## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP PACKAGE DIMENSIONS** 

**==> picture [461 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−70 (SOT−323)<br>CASE 419−04<br>ISSUE N<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>(l iaa nr = —————_—— D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>STYLE 3:<br>A A2 c PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>0.05 (0.002) L<br>A1<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>aa<br>0.075<br>0.9<br>0.035<br>0.7<br>i<br>0.028<br>SCALE 10:1 mm<br>at _ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**13** 



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