# Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount ![Product image](https://novapart.co/image/farnell:2728082/) **URL**: https://novapart.co/products/SMMBT3904TT1G/bipolar-bjt-single-transistor-npn-40-v-200-ma-mw **SKU**: SMMBT3904TT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0690 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 200mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 300MHz | | Transistor Case Style | SOT-416 | | Dc Current Gain Hfe Min | 30hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 200mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2728082/) ## MMBT3904TT1G, SMMBT3904TT1G ## General Purpose Transistors ## **NPN Silicon** This transistor is designed for general purpose amplifier applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** **GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **SOT−416/SC−75 CASE 463 STYLE 1** **MAXIMUM RATINGS** (TA = 25 ° C) **Rating Symbol Value Unit** COLLECTOR Collector − Emitter Voltage VCEO 40 Vdc 3 Collector − Base Voltage VCBO 60 Vdc 1 Emitter − Base Voltage VEBO 6.0 Vdc BASE Collector Current − Continuous IC 200 mAdc ~~Ss <~~ **THERMAL CHARACTERISTICS** 2 EMITTER **Characteristic Symbol Max Unit** Total Device Dissipation, PD **MARKING DIAGRAM** FR−4 Board (Note 1) @TA = 25 ° C 200 mW Derated above 25 ° C 1.6 mW/ ° C ~~—~~ Thermal Resistance, Junction−to−Ambient R JA 600 ° C/W (Note 1) AM M Total Device Dissipation, PD FR−4 Board (Note 2) @TA = 25 ° C 300 mW 1 Derated above 25 ° C 2.4 mW/ ° C AM = Device Code Thermal Resistance, Junction−to−Ambient R JA 400 ° C/W M = Date Code* (Note 2) = Pb−Free Package Junction and Storage Temperature Range TJ, Tstg −65 to +150 ° C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending updevice. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad **ORDERING INFORMATION** **Device Package Shipping**[†] MMBT3904TT1G SOT−416 3,000 Tape & Reel (Pb−Free) SMMBT3904TT1G SOT−416 3,000 Tape & Reel (Pb−Free) - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2011 **June, 2017 − Rev. 6** **MMBT3904TT1/D** ## **MMBT3904TT1G, SMMBT3904TT1G** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= 1.0 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)||V(BR)CBO|60|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)||V(BR)EBO|6.0|−|Vdc| |Base Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)||IBL|−|50|nAdc| |Collector Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)||ICEX|−|50|nAdc| |**ON CHARACTERISTICS**(Note 3)|||||| |DC Current Gain
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)||hFE|40
70
100
60
30|−
−
300
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VCE(sat)|−
−|0.2
0.3|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)||VBE(sat)|0.65
−|0.85
0.95|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|300|−|MHz| |Output Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)||Cobo|−|4.0|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)||Cibo|−|8.0|pF| |Input Impedance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hie|1.0|10|k�| |Voltage Feedback Ratio
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hre|0.5|8.0|X 10−4| |Small−Signal Current Gain
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hfe|100|400|−| |Output Admittance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)||hoe|1.0|40|�mhos| |Noise Figure
(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)||NF|−|5.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)
MMBT3904TT1G, SMMBT3904TT1G|td|−|35|ns| |Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G|tr|−|35|| |Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)
MMBT3904TT1G, SMMBT3904TT1G|ts|−|200|| |Fall Time|(IB1= IB2= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G|tf|−|50|| 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **www.onsemi.com** **2** **MMBT3904TT1G, SMMBT3904TT1G** **==> picture [488 x 171] intentionally omitted <==** **----- Start of picture text -----**
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE t, TIME (s)
**----- End of picture text -----**
**Figure 1. Normalized Thermal Response** **==> picture [489 x 392] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 �s t1
+10.9 V
300 ns +10.9 V 275 DUTY CYCLE = 2% 275
10 k 10 k
0
-�0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
-�9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time Figure 3. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10 5000
3000 VCC = 40 V
7.0 IC/IB = 10
2000
5.0
1000
700
Cibo
500
3.0
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Q, CHARGE (pC)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 4. Capacitance** **Figure 5. Charge Data** **www.onsemi.com** **3** **MMBT3904TT1G, SMMBT3904TT1G** **==> picture [491 x 636] intentionally omitted <==** **----- Start of picture text -----**
500 500
300 IC/IB = 10 300 VCC = 40 V
200 200 IC/IB = 10
100 100
70 tr @ VCC = 3.0 V 70
50 50
30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−On Time Figure 7. Rise Time
500 500
′
300 t s = ts - [1] /8 tf 300 VCC = 40 V
200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2
IC/IB = 20
100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 8. Storage Time Figure 9. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 � f = 1.0 kHz
10 IC = 1.0 mA 12 IC = 1.0 mA
10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 �
IC = 0.5 mA IC = 50 �A
8
6
SOURCE RESISTANCE = 1.0 k IC = 100 �A
IC = 50 �A 6
4
4
2
SOURCE RESISTANCE = 500 � 2
IC = 100 �A
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)′s
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**Figure 10. Noise Figure** **Figure 11. Noise Figure** **www.onsemi.com** **4** **MMBT3904TT1G, SMMBT3904TT1G** ## **h PARAMETERS** (VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C) **==> picture [490 x 593] intentionally omitted <==** **----- Start of picture text -----**
300 100
50
200
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Figure 13. Output Admittance
20 10
7.0
10
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 14. Input Impedance Figure 15. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C MMBT3904WT1 VCE = 1.0 V
1.0 +25°C
0.7
-�55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
�
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
FE
h , DC CURRENT GAIN (NORMALIZED)
**----- End of picture text -----**
**Figure 16. DC Current Gain** **www.onsemi.com** **5** **MMBT3904TT1G, SMMBT3904TT1G** **==> picture [488 x 387] intentionally omitted <==** **----- Start of picture text -----**
1.0
T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 17. Collector Saturation Region
1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
�VC FOR VCE(sat)
0.8 0 -�55°C TO +25°C
VBE @ VCE =1.0 V
0.6 -�0.5
-�55°C TO +25°C
0.4 -�1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
°
V, VOLTAGE (VOLTS) COEFFICIENT (mV/ C)
**----- End of picture text -----**
**Figure 18. “ON” Voltages** **Figure 19. Temperature Coefficients** **www.onsemi.com** **6** **MMBT3904TT1G, SMMBT3904TT1G** ## **PACKAGE DIMENSIONS** ## **SC−75/SOT−416** CASE 463 ISSUE G **==> picture [423 x 349] intentionally omitted <==** **----- Start of picture text -----**
−E− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
TT Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
e −D− A 0.70 0.80 0.90 0.027 0.031 0.035
1 A1 0.00 0.05 0.10 0.000 0.002 0.004
b 3 PL b 0.15 0.20 0.30 0.006 0.008 0.012
0.20 (0.008) M D HE 0.20 (0.008) E CDE 0.101.550.70 0.151.600.80 0.251.650.90 0.0040.0610.027 0.0060.0630.031 0.0100.0650.035
e 1.00 BSC 0.04 BSC
7 D —eeSeeE L 0.10 0.15 0.20 0.004 0.006 0.008
a Ge HE 1.50 1.60 1.70 0.060 0.063 0.067
C STYLE 1:
A PIN 1. BASE
2. EMITTER
3. COLLECTOR
L A1
SOLDERING FOOTPRINT*
0.356
0.014
ani
1.803 0.787
0.071 0.031
7 mm _
_ 0.508 a
0.020 1.000
0.039
SCALE 10:1 mm
(—) inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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