# Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 225 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2630344/) **URL**: https://novapart.co/products/SMMBT2907ALT1G/bipolar-bjt-single-transistor-pnp-60-v-600-ma-225 **SKU**: SMMBT2907ALT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0320 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:50hFE; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 225mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 200MHz | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 50hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 600mA | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2630344/) ## MMBT2907AL, SMMBT2907AL ## General Purpose Transistors ## **PNP Silicon** ## **www.onsemi.com** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [69 x 88] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
€
2
EMITTER
**----- End of picture text -----**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** **==> picture [474 x 311] intentionally omitted <==** **----- Start of picture text -----**
||||||||||| |---|---|---|---|---|---|---|---|---|---| |Rating|Symbol|Value|Unit|EMITTER| |Collector−Emitter Voltage|VCEO|−60|Vdc| |Collector−Base Voltage|VCBO|−60|Vdc|3| |Emitter−Base Voltage|VEBO|−5.0|Vdc|SOT−23 (TO−236AB)| |CASE 318| |Collector Current − Continuous|IC|−600|mAdc|1|STYLE 6| |2| |Collector Current − Peak (Note 3)|ICM|−1200|mAdc| |oS| |THERMAL CHARACTERISTICS| |Characteristic|Symbol|Max|Unit|MARKING DIAGRAM| |Total Device Dissipation − FR−5 Board|PD| |Derate above 25(Note 1) @TA = 25|°|C|°|C|2251.8|mW/mW|°|C|2F M| |Thermal Resistance, Junction−to−Ambient|R|JA|556|°|C/W|1|;| |Total Device Dissipation − Alumina|PD| |Substrate, (Note 2) @TA = 25|°|C|300|mW|2F|= Device Code| |Derate above 25|°|C|2.4|mW/|°|C|M|= Date Code*| |Thermal Resistance, Junction−to−Ambient|R|JA|417|°|C/W|= Pb−Free Package| |ee|(Note: Microdot may be in either location)| |Total Device Dissipation − Heat Spreader|PD|*Date Code orientation and/or overbar may| |or equivalent, (Note 4) @TA = 25|°|C|350|mW|vary depending upon manufacturing location.| |Thermal Resistance, Junction−to−Ambient|R|JA|357|°|C/W| |—_—|Junction and Storage Temperature|TJ, Tstg|−55 to +150|°|C|ORDERING INFORMATION| |Stresses exceeding those listed in the Maximum Ratings table may damage the| |device. If any of these limits are exceeded, device functionality should not be|Device|Package|Shipping| |assumed, damage may occur and reliability may be affected.| |1.|FR−5 = 1.0|0.75|0.062 in.|MMBT2907ALT1G|SOT−23| **----- End of picture text -----**
*Date Code orientation and/or overbar may vary depending upon manufacturing location. **==> picture [184 x 61] intentionally omitted <==** **----- Start of picture text -----**
||||| |---|---|---|---| |Device|Package|Shipping|[†]| |MMBT2907ALT1G|SOT−23|3000 / Tape &| |SMMBT2907ALT1G|(Pb−Free)|Reel| |MMBT2907ALT3G|SOT−23|10,000 / Tape &| |SMMBT2907ALT3G|(Pb−Free)|Reel| **----- End of picture text -----**
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. 4. Heat Spreader or equivalent = 450 mm[2] , 2 oz. - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBT2907ALT1/D** **1** © Semiconductor Components Industries, LLC, 2015 **October, 2016 − Rev. 15** ## **MMBT2907AL, SMMBT2907AL** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 5)
(IC= −1.0 mAdc, IB= 0)
(IC= −10 mAdc, IB= 0)||V(BR)CEO|−60
−60|−
−|Vdc| |Collector−Base Breakdown Voltage (IC= −10�Adc, IE= 0)||V(BR)CBO|−60|−|Vdc| |Emitter−Base Breakdown Voltage (IE= −10�Adc, IC= 0)||V(BR)EBO|−5.0|−|Vdc| |Collector Cutoff Current (VCE= −30 Vdc, VEB(off)= −0.5 Vdc)||ICEX|−|−50|nAdc| |Collector Cutoff Current
(VCB= −50 Vdc, IE= 0)
(VCB= −50 Vdc, IE= 0, TA= 125°C)||ICBO|−
−|−0.010
−10|�Adc| |Base Cutoff Current (VCE= −30 Vdc, VEB(off)= −0.5 Vdc)||IBL|−|−50|nAdc| |**ON CHARACTERISTICS**|||||| |DC Current Gain
(IC= −0.1 mAdc, VCE= −10 Vdc)
(IC= −1.0 mAdc, VCE= −10 Vdc)
(IC= −10 mAdc, VCE= −10 Vdc)
(IC= −150 mAdc, VCE= −10 Vdc)
(IC= −500 mAdc, VCE= −10 Vdc) (Note 5)||hFE|75
100
100
100
50|−
−
−
300
−|−| |Collector−Emitter Saturation Voltage (Note 5)
(IC= −150 mAdc, IB= −15 mAdc) (Note 5)
(IC= −500 mAdc, IB= −50 mAdc)||VCE(sat)|−
−|−0.4
−1.6|Vdc| |Base−Emitter Saturation Voltage (Note 5)
(IC= −150 mAdc, IB= −15 mAdc)
(IC= −500 mAdc, IB= −50 mAdc)||VBE(sat)|−
−|−1.3
−2.6|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product (Notes 5, 6),
(IC= −50 mAdc, VCE= −20 Vdc, f = 100 MHz)||fT|200|−|MHz| |Output Capacitance (VCB= −10 Vdc, IE|= 0, f = 1.0 MHz)|Cobo|−|8.0|pF| |Input Capacitance (VEB= −2.0 Vdc, IC=|0, f = 1.0 MHz)|Cibo|−|30|| |**SWITCHING CHARACTERISTICS**|||||| |Turn−On Time|(VCC= −30 Vdc, IC= −150 mAdc,
IB1= −15 mAdc)|ton|−|45|ns| |Delay Time||td|−|10|| |Rise Time||tr|−|40|| |Turn−Off Time|**(VCC = −6.0 Vdc, IC = −150 mAdc,**
**IB1 = IB2 = −15 mAdc)**|toff|−|100|| |Storage Time||ts|−|80|| |Fall Time||tf|−|30|| 5. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 6. fT is defined as the frequency at which |hfe| extrapolates to unity. **==> picture [203 x 107] intentionally omitted <==** **----- Start of picture text -----**
INPUT
Zo = 50 � -30 V
PRF = 150 PPS
200
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
1.0 k
0 TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-16 V 50
200 ns
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**==> picture [212 x 107] intentionally omitted <==** **----- Start of picture text -----**
INPUT
Zo = 50 � +15 V -6.0 V
PRF = 150 PPS
RISE TIME ≤ 2.0 ns 1.0 k 37
P.W. < 200 ns
1.0 k
0 TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-30 V 50 1N916
200 ns
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**Figure 1. Delay and Rise Time Test Circuit** **Figure 2. Storage and Fall Time Test Circuit** **www.onsemi.com** **2** **MMBT2907AL, SMMBT2907AL** ## **TYPICAL CHARACTERISTICS** **==> picture [487 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
TJ = 150°C VCE = 10 V
25°C
100 -�55°C
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
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**Figure 3. DC Current Gain** **==> picture [487 x 388] intentionally omitted <==** **----- Start of picture text -----**
-1.0
-0.8
IC = -1.0 mA -10 mA -100 mA -500 mA
-0.6
-0.4
-0.2
0
-0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
300 500
200 VCC = -30 V 300 VCC = -30 V
100 tr TICJ/I = 25B = 10°C 200 tf IICB1/I = IB = 10B2
70 100 TJ = 25°C
50
70
30 50
20 30 t′s = ts - 1/8 tf
td @ VBE(off) = 0 V
20
10
7.0 10
5.0 2.0 V
7.0
3.0 5.0
-5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT (mA)
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
t, TIME (ns) t, TIME (ns)
**----- End of picture text -----**
**Figure 5. Turn−On Time** **Figure 6. Turn−Off Time** **www.onsemi.com** **3** **MMBT2907AL, SMMBT2907AL** ## **TYPICAL SMALL−SIGNAL Characteristics** ## **NOISE FIGURE** VCE = 10 Vdc, TA = 25 ° C **==> picture [490 x 594] intentionally omitted <==** **----- Start of picture text -----**
10 10
f = 1.0 kHz
8.0 8.0
6.0 -500 IC = -1.0 mA, R�A, Rs = 560s = 430 � � 6.0 -100 IC = -50 �A �A
-50 �A, Rs = 2.7 k� -500 �A
4.0 -100 �A, Rs = 1.6 k� 4.0 -1.0 mA
2.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects Figure 8. Source Resistance Effects
30 400
300
20 Ceb
200
10
100
7.0 80 VCE = -20 V
5.0 Ccb 60 TJ = 25°C
40
3.0 30
2.0 20
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product
1 1.1
IC/IB = 10 1.0 IC/IB = 10
150 ° C
25 ° C 0.9 −55 ° C
−55 ° C 0.8
25 ° C
0.7
0.1
0.6
0.5 150 ° C
0.4
0.3
0.01 0.2
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
C, CAPACITANCE (pF)
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
, BASE−EMITTER
, COLLECTOR−EMITTER
BE(sat)
V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat)
V
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**Figure 11. Collector Emitter Saturation Voltage vs. Collector Current** **Figure 12. Base Emitter Saturation Voltage vs. Collector Current** **www.onsemi.com** **4** **MMBT2907AL, SMMBT2907AL** ## **TYPICAL SMALL−SIGNAL Characteristics** ## **NOISE FIGURE** VCE = 10 Vdc, TA = 25 ° C **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1.2 +0.5
1.1 VCE = 1 V
0
1.0 R�VC for VCE(sat)
0.9 −55 ° C -0.5
0.8
0.7 25 ° C -1.0
0.6
-1.5
0.5
150 ° C
0.4
-2.0 R�VB for VBE
0.3
0.2 -2.5
0.001 0.01 0.1 1 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
C)
°
COEFFICIENT (mV/
, BASE−EMITTER VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 13. Base Emitter Voltage vs. Collector Current** **Figure 14. Temperature Coefficients** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
10
1 s 100 ms 10 ms 1 ms 100 � s 10 � s
1
0.1
0.01
Single Pulse Test
@ TA = 25 ° C
0.001
0.01 0.1 1 10 100
VCE (Vdc)
IC (A)
**----- End of picture text -----**
**Figure 15. Safe Operating Area** **www.onsemi.com** **5** **MMBT2907AL, SMMBT2907AL** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [473 x 171] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE
a 3 = BASE MATERIAL.
| E HE T 4.PROTRUSIONS, OR GATE BURRS.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c STYLE 6:
END VIEW PIN 1. BASE
**----- End of picture text -----**
|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| |**A**|0.89|1.00|1.11|0.035|0.039|0.044| |**A1b**|0.010.37|0.060.44|0.100.50|0.0000.015|0.0020.017|0.0040.020| |**b**|0.37|0.44|0.50|0.015|0.017|0.020| |**c**|0.08|0.14|0.20|0.003|0.006|0.008| |**D**|2.80|2.90|3.04|0.110|0.114|0.120| |**E**|1.20|1.30|1.40|0.047|0.051|0.055| |**e**|1.78|1.90|2.04|0.070|0.075|0.080| |**L**|0.30|0.43|0.55|0.012|0.017|0.022| |**L1**|0.35|0.54|0.69|0.014|0.021|0.027| |**L1**
**HE**
**T**|2.10
0.35
0
°|2.40
0.54|2.64
0.69
10
°|0.083
0.014
0
°|0.094
0.021|0.104
0.027
10
°| **==> picture [142 x 135] intentionally omitted <==** **----- Start of picture text -----**
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90 r o 0.90
Lo | cr
3X 0.80 | LLL 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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