# Small Signal Diode, Dual Series, 100 V, 200 mA, 1.1 V, 4 ns, 1.6 A

![Product image](https://novapart.co/image/farnell:3606786/)

**URL**: https://novapart.co/products/SMMBD7000LT1G/small-signal-diode-dual-series-100-v-200-ma-11-4
**SKU**: SMMBD7000LT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0200
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-23 |
| Diode Configuration | Dual Series |
| Forward Voltage Max | 1.1V |
| Forward Surge Current | 1.6A |
| Reverse Recovery Time | 4ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606786/)

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## Dual Switching Diode MMBD7000L, SMMBD7000L 

**SOT−23 (TO−236) CASE 318 STYLE 11** 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

PPAP Capable 1 2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ANODE CATHODE Compliant ~~aa~~ 3 CATHODE/ANODE **MAXIMUM RATINGS (EACH DIODE)** 

**Rating Symbol Value Unit MARKING DIAGRAM** Reverse Voltage VR 100 V Forward Current IF 200 mA M5C M Forward Surge Current IFSM 1.6 A (60 Hz @ 1 cycle) 1 Repetitive Peak Forward Current IFRM 0.5 A M5C = Specific Device Code (Pulse Wave = 1 sec, Duty Cycle = 66%) M = Date Code* ~~ae~~ Stresses exceeding those listed in the Maximum Ratings table may damage the = Pb−Free Package device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. *Date Code orientation and/or overbar may **THERMAL CHARACTERISTICS** vary depending upon manufacturing location. 

**Characteristic Symbol Max Unit** ~~eses (epee~~ Total Device Dissipation FR−5 Board PD 225 mW (Note 1)TA = 25 ° C **ORDERING INFORMATION** Derate above 25 ° C 1.8 mW/ ° C ~~—~~ **Device Package Shipping**[†] Thermal Resistance, Junction to R JA 556 ° C/W MMBD7000LT1G SOT−23 3,000 / Ambient ~~ee~~ (Pb−Free) Tape & Reel ~~ee~~ Total Device Dissipation PD 300 mW SMMBD7000LT1G SOT−23 3,000 / Alumina Substrate, (Note 2) TA = 25 ° C (Pb−Free) Tape & Reel Derate above 25 ° C 2.4 mW/ ° C MMBD7000LT3G SOT−23 10,000 / Thermal Resistance, R JA ° C/W (Pb−Free) Tape & Reel Junction−to−Ambient 417 SMMBD7000LT3G SOT−23 10,000 / ~~ee PL~~ Junction and Storage Temperature T ~~ee~~ J, Tstg −55 to +150 ° C ~~===~~ (Pb−Free) Tape & Reel †For information on tape and reel specifications, 1. FR−5 = 1.0 0.75 0.062 in. including part orientation and tape sizes, please 2. ~~HH~~ Alumina = 0.4 0.3 0.024 in. 99.5% alumina. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MMBD7000LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 1994 **October, 2024 − Rev. 9** 

## **MMBD7000L, SMMBD7000L** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **(EACH DIODE)** 

**Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** Reverse Breakdown Voltage V(BR) Vdc (I(BR) = 100 Adc) 100 − ~~eeee ee ee~~ Reverse Voltage Leakage Current Adc (VR = 50 Vdc) IR − 1.0 (VR = 100 Vdc) IR2 − 3.0 (VR = 50 Vdc, 125 ° C) IR3 − 100 ~~eee~~ Forward Voltage VF Vdc (IF = 1.0 mAdc) 0.55 0.7 (IF = 10 mAdc) 0.67 0.82 (IF = 100 mAdc) 0.75 1.1 Reverse Recovery Time trr ns (IF = IR = 10 mAdc) (Figure 1) − 4.0 ~~ee~~ Capacitance (VR = 0 V) ~~ee~~ C ~~ee~~ − 1.5 ~~ee~~ pF ~~Qe~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 Q<br>IF<br>+10 V 2.0 k 0.1 F ie tr t p t<br>100 H ; IF 10% t rr t<br>0.1 F m |  -<br>DUT 90%<br>50  OUTPUT 50  INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**MMBD7000L, SMMBD7000L** 

## **CURVES APPLICABLE TO EACH DIODE** 

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**----- Start of picture text -----**<br>
100 10<br>TA = 150°C<br>—————a ee ee) ee 0 ee ee | ————a re a<br>FCTCC ° FJ YF A [| [| | LE<br>TA = 85 C TA = -40°C 1.0 TA = 125°C<br>10 SSN a ee = ee ee<br>TA = 85°C<br>Ff fT TA = 25°C [ 0.1 ee ee ee ee<br>ee a eo es ——>>>>>Fx_—__—>__—__==SS=S==<br>1.0 _-——— + — fF i FF ss pT TA = 55°C S S<br>reFe ee ee eee 0.01 —a ee SS<br>a | ee | S E|<br>TA = 25°C<br>0.1 A)ee A  Aee AA 0.001 ——rs ee ——————— |<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (IR<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

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0.68<br>0.64<br>A a<br>0.60<br>0.56 aN ee<br>i<br>0.52 Pot | | | PS<br>0 2.0 4.0 6.0 8.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>, DIODE CAPACITANCE (pF)<br>D<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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25<br>20<br>A<br>15<br>10<br>{|<br>5<br>i<br>0 [ert<br>0.001 0.01 0.1 1 10 100 1000<br>tp, PULSE ON TIME (ms)<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSW<br>**----- End of picture text -----**<br>


**Figure 5. Forward Surge Current** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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