# Bipolar Transistor Array, NPN, PNP, 80 V, 80 V, 500 mA, 500 mA, 330 mW

![Product image](https://novapart.co/image/farnell:2480767RL/)

**URL**: https://novapart.co/products/SMBTA06UPNE6327HTSA1/bipolar-transistor-array-npn-pnp-80-v-500-ma-330
**SKU**: SMBTA06UPNE6327HTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.2240
**Stock**: 10+

## Description

Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SC-74; No. of

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN, PNP |
| Power Dissipation Npn | 330mW |
| Power Dissipation Pnp | 330mW |
| Transistor Case Style | SC-74 |
| Transition Frequency Npn | 100MHz |
| Transition Frequency Pnp | 100MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 100hFE |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | 500mA |
| Continuous Collector Current Pnp | 500mA |
| Collector Emitter Voltage Max Npn | 80V |
| Collector Emitter Voltage Max Pnp | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480767RL/)

**SMBTA06UPN** 

## **NPN / PNP Silicon AF Transistor Array** 

- High breakdown voltage 

- Low collector-emitter saturation voltage 

- Two (galvanic) internal isolated NPN/PNP 

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4<br>5 3<br>6 2<br>1<br>**----- End of picture text -----**<br>


Transistor in one package 

- Pb-free (RoHS compliant) package 

- Qualified according AEC Q101 

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C1 B2 E2<br>6 5 4<br>Tape loading orientation f}| tL<br>TR2<br>Marking on SC74 package TR1<br>Top View<br>° \ (for example W1s)<br>6 5 4 corresponds to pin 1 of device<br>W1s 1 2 3<br>E1 B1 C2<br>1 2 3 Position in tape: pin 1 EHA07177<br>opposite of feed hole side<br>Direction of Unreeling<br>**----- End of picture text -----**<br>


## **Tape loading orientation** 

|**Maximum Ratings**|ee|ee||
|---|---|---|---|
|**Parameter**|**Symbol**<br>ee<br>ee|**Value**<br>ee<br>eee|**Unit**|
|Collector-emitter voltage|_V_CEO<br>ee<br>ee|80<br>ee<br>eee|V|
|Collector-base voltage|_V_CBO<br>ee <br>eee|80<br> eee<br>eee||
|Emitter-base voltage|_V_EBO<br>SF<br>ee|4<br>SF<br>eee||
|Collector current|_I_C<br>ee|500<br>eee|mA|
|Peak collector current, _t_p ≤10 ms|_I_CM<br>ee <br>Sf|1<br> eee<br>Sf|A|
|p<br>Base current|_I_B<br>Sf|100<br>Sf|mA|
|Peak base current|_I_BM|200||
|Total power dissipation-<br>_T_S ≤115 °C|_P_tot<br>fo|330<br>fo|mW|
|Junction temperature|_T_j<br>SF|150<br>SF|°C|
|Storage temperature|j<br>_T_stg<br>~~a ~~|-65 ... 150<br> ~~eee~~||



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**SMBTA06UPN** 

|**Thermal Resistance**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|_R_thJS|≤105|K/W|
|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified||||



|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|||**Unit**|
|Junction - soldering point1)|_R_thJS|≤105|||K/W|
|**Electrical Characteristics**at_T_A= 25°C, unless otherwise specified||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|80|-|-|V|
|Collector-base breakdown voltage<br>_I_C= 100 µA,_I_E= 0|_V_(BR)CBO|80|-|-||
|Emitter-base breakdown voltage<br>_I_E= 10 µA,_I_C= 0|_V_(BR)EBO|4|-|-||
|Collector-base cutoff current<br>_V_CB= 80 V,_I_E= 0<br>_V_CB= 80 V,_I_E= 0 ,_T_A= 150 °C|_I_CBO|-<br>-|-<br>-|0.1<br>20|µA|
|Collector-emitter cutoff current<br>_V_CE= 60 V,_I_B= 0|_I_CEO|-|-|100|nA|
|DC current gain2)<br>_I_C= 10 mA,_V_CE= 1 V<br>_I_C= 100 mA,_V_CE= 1 V|_h_FE|100<br>100|-<br>-|-<br>-|-|
|Collector-emitter saturation voltage2)<br>_I_C= 100 mA,_I_B= 10 mA|_V_CEsat|-|-|0.25|V|
|Base-emitter voltage2)<br>_I_C= 100 mA,_V_CE= 1 V|_V_BE(ON)|-|-|1.2||
|||||||
|**AC Characteristics**||||||
|Transition frequency<br>_I_C= 20 mA,_V_CE= 5 V,_f_= 20 MHz|_f_T|-|100|-|MHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|7|-|pF|



> 1For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 

2Pulse test: t < 300µs; D < 2% 

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**SMBTA06UPN** 

**DC current gain** _h_ FE =  ƒ( _I_ C) _V_ = 1 V CE 

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EHP00821<br>10 3<br>h FE<br>100  C<br>10 2 25  C<br>-50  C<br>10 [1]<br>10 0<br>10 -1 10 0 10 1 10 2 mA 10 3<br>Ι C<br>**----- End of picture text -----**<br>


## **Base-emitter saturation voltage** 

_I_ C =  ƒ( _V_ BEsat), _h_ FE = 10 

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10 3 EHP00818<br>mA<br>100 ˚C<br>Ι C 25 ˚C<br>-50 ˚C<br>10 [2]<br>5<br>10 1<br>5<br>10 [0]<br>5<br>10 [-1]<br>0 0.5 1.0 V 1.5<br>VBEsat<br>**----- End of picture text -----**<br>


**Collector-emitter saturation voltage** _I_ C = ƒ( _V_ CEsat), _h_ FE = 10 

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EHP00819<br>10 3<br>Ι  C mA<br>100 C<br>25 C<br>-50 C<br>10 2<br>5<br>10 1<br>5<br>10 0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8<br>V CEsat<br>**----- End of picture text -----**<br>


**Collector current** _I_ C = ƒ( _V_ BE) _V_ = 1V CE 

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EHP00815<br>10 3<br>mA<br>Ι C 100   C25   C<br>-50   C<br>10 [2]<br>5<br>10 1<br>5<br>10 [0]<br>5<br>10 [-1]<br>0 0.5 1.0 V 1.5<br>V BE<br>**----- End of picture text -----**<br>


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**Collector cutoff current** _I_ CBO =  ƒ( _T_ A) _V_ CBO = 80 V 

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EHP00820<br>10 4<br>nA<br>Ι CBO<br>max<br>10 [3]<br>5<br>10 [2]<br>5<br>10 1 typ<br>5<br>10 [0]<br>5<br>10 [-1]<br>0 50 100 C 150<br>T A<br>**----- End of picture text -----**<br>


**Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) 

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65<br>pF<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>CEB<br>20<br>15<br>10<br>5<br>CCB<br>0<br>0 4 8 12 16 V 22<br>V CB( V EB<br>)<br>EB<br>C<br>(<br>CB<br>C<br>**----- End of picture text -----**<br>


**Transition frequency** _f_ T =  ƒ( _I_ C) _V_ CE = parameter in V, _f_ = 2 GHz 

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10 3 EHP00817<br>MHz<br>f T 5<br>10 [2]<br>5<br>10 1<br>10 0 5 10 [1] 5 10 [2] mA 10 3<br>Ι C<br>**----- End of picture text -----**<br>


**Total power dissipation** _P_ tot = ƒ( _T_ S) 

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400<br>mW<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 20 40 60 80 100 120 °C 150<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


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**SMBTA06UPN** 

## **Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) 

## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) 

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10 3  10 3<br>K/W<br>D=0<br>0.005<br>0.01<br>10 2  0.02<br>0.05<br>10 2  0.1<br>0.2<br>0.5<br>10 1<br>D=0.5 10 1<br>0.2<br>10 0  0.1<br>0.05<br>0.02<br>0.01<br>0.005<br>0<br>10 -1  10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t t<br>p p<br>totDC<br>/ P<br>thJS totmax<br>R P<br>**----- End of picture text -----**<br>


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**Package SC74** 

**SMBTA06UPN** 

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Package Outline<br>2.9 ±0.2<br>B 1.1 MAX.<br>(2.25)<br>(0.35) 0.15 -0.06+0.1<br>6 5 4<br>1 2 3<br>0.35 +0.1-0.05 A<br>Pin 1 0.2 M B 6x 0.1 MAX.<br>marking 0.95<br>0.2 [M] A<br>1.9<br>±0.1 ±0.1 ±0.1<br>2.5 0.25 1.6<br>10˚ MAX. 10˚ MAX.<br>**----- End of picture text -----**<br>


## Foot Print 

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0.5<br>0.95<br>9 9<br>1. 2.<br>**----- End of picture text -----**<br>


## Marking Layout (Example) 

Small variations  in positioning of 

Date code, Type code and Manufacture are possible. 

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Manufacturer<br>2005, June<br>Date code (Year/Month)<br>Pin 1 marking BCW66H<br>Laser marking Type code<br>**----- End of picture text -----**<br>


## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

For symmetric types no defined Pin 1 orientation in reel. 

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4 0.2<br>Pin 1 3.15 1.15<br>marking<br>8<br>2.7<br>**----- End of picture text -----**<br>


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**SMBTA06UPN** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2011-10-05 

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