# Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 150 mW ![Product image](https://novapart.co/image/farnell:2724494RL/) **URL**: https://novapart.co/products/SMBT3946DW1T1G/bipolar-transistor-array-complementary-npn-and-pnp **SKU**: SMBT3946DW1T1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.0320 **Stock**: 1000+ **Lead Time**: 99 days (indicative) ## Description Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Complementary NPN and PNP | | Power Dissipation Npn | 150mW | | Power Dissipation Pnp | 150mW | | Transistor Case Style | SOT-363 | | Transition Frequency Npn | 300MHz | | Transition Frequency Pnp | 250MHz | | Operating Temperature Max | 150°C | | Dc Current Gain Hfe Min Npn | 30hFE | | Dc Current Gain Hfe Min Pnp | 30hFE | | Continuous Collector Current Npn | 200mA | | Continuous Collector Current Pnp | 200mA | | Collector Emitter Voltage Max Npn | 40V | | Collector Emitter Voltage Max Pnp | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2724494RL/) ## MBT3946DW1T1G, SMBT3946DW1T1G ## Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. ## **Features** - hFE, 100−300 - Low VCE(sat), ≤ 0.4 V ## **http://onsemi.com** **SOT−363/SC−88 CASE 419B STYLE 1** - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ## **Table 1. MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Collector−Emitter Voltage
(NPN)
(PNP)|VCEO|40
−40|Vdc| |Collector −Base Voltage
(NPN)
(PNP)|VCBO|60
−40|Vdc| |Emitter−Base Voltage
(NPN)
(PNP)|VEBO|6.0
−5.0|Vdc| |Collector Current − Continuous
(NPN)
(PNP)|IC|200
−200|mAdc| |Electrostatic Discharge|ESD|HBM Class 2
MM Class B|| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **Table 2. THERMAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Total Package Dissipation (Note 1)
TA= 25°C|PD|150|mW| |Thermal Resistance,
Junction-to-Ambient|R JA|833|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. **==> picture [122 x 114] intentionally omitted <==** **----- Start of picture text -----**
(3) (2) (1)
Q1 Q2
aes
(4) (5) (6)
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
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## **MARKING DIAGRAM** **==> picture [96 x 84] intentionally omitted <==** **----- Start of picture text -----**
46 M
46 = Specific Device Code
M = Date Code
= Pb-Free Package
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**==> picture [146 x 9] intentionally omitted <==** **----- Start of picture text -----**
(Note: Microdot may be in either location)
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**ORDERING INFORMATION** **Device Package Shipping**[†] MBT3946DW1T1G SC−88 3,000 / (Pb-Free) Tape & Reel SMBT3946DW1T1G SC−88 3,000 / (Pb-Free) Tape & Reel MBT3946DW1T2G SC−88 3,000 / (Pb-Free) Tape & Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MBT3946DW1T1/D** **1** © Semiconductor Components Industries, LLC, 2012 **July, 2012 − Rev. 7** **MBT3946DW1T1G, SMBT3946DW1T1G** **Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**Table 3. ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 2)
(IC= 1.0 mAdc, IB= 0)
(NPN)
(IC= −1.0 mAdc, IB= 0)
(PNP)|V(BR)CEO|40
−40|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)
(NPN)
(IC= −10�Adc, IE= 0)
(PNP)|V(BR)CBO|60
−40|−
−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)
(NPN)
(IE= −10�Adc, IC= 0)
(PNP)|V(BR)EBO|6.0
−5.0|−
−|Vdc| |Base Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
(NPN)
(VCE= −30 Vdc, VEB= −3.0 Vdc)
(PNP)|IBL|−
−|50
−50|nAdc| |Collector Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
(NPN)
(VCE= −30 Vdc, VEB= −3.0 Vdc)
(PNP)|ICEX|−
−|50
−50|nAdc| |**ON CHARACTERISTICS**(Note 2)||||| |DC Current Gain
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
(NPN)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)
(IC= −0.1 mAdc, VCE= −1.0 Vdc)
(PNP)
(IC= −1.0 mAdc, VCE= −1.0 Vdc)
(IC= −10 mAdc, VCE= −1.0 Vdc)
(IC= −50 mAdc, VCE= −1.0 Vdc)
(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|40
70
100
60
30
60
80
100
60
30|−
−
300
−
−
−
−
300
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(NPN)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
(PNP)
(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−
−
−
−|0.2
0.3
−0.25
−0.4|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(NPN)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
(PNP)
(IC= −50 mAdc, IB= −5.0 mAdc)|VBE(sat)|0.65
−
−0.65
−|0.85
0.95
−0.85
−0.95|Vdc| |**SMALL-SIGNAL CHARACTERISTICS **||||| |Current−Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)
(NPN)
(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)
(PNP)|fT|300
250|−
−|MHz| |Output Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)
(NPN)
(VCB= −5.0 Vdc, IE= 0, f = 1.0 MHz)
(PNP)|Cobo|−
−|4.0
4.5|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)
(NPN)
(VEB= −0.5 Vdc, IC= 0, f = 1.0 MHz)
(PNP)|Cibo|−
−|8.0
10.0|pF| |Input Impedance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hie|1.0
2.0|10
12|k�| |Voltage Feedback Ratio
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hre|0.5
0.1|8.0
10|X 10−4| |Small−Signal Current Gain
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)|hfe|100
100|400
400|−| **http://onsemi.com** **2** **MBT3946DW1T1G, SMBT3946DW1T1G** **Table 4. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (continued) |**Table 4. ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|**Table 4. ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed) (continued)|||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |Output Admittance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(NPN)
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
(PNP)||hoe|1.0
3.0|40
60|�mhos| |Noise Figure
(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)
(NPN)
(VCE= −5.0 Vdc, IC= −100�Adc, RS= 1.0 k�, f = 1.0 kHz)
(PNP)||NF|−
−|5.0
4.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)
(NPN)
(VCC= −3.0 Vdc, VBE= 0.5 Vdc)
(PNP)|td|−
−|35
35|ns| |Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)
(NPN)
(IC= −10 mAdc, IB1= −1.0 mAdc)
(PNP)|tr|−
−|35
35|| |Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)
(NPN)
(VCC= −3.0 Vdc, IC= −10 mAdc)
(PNP)|ts|−
−|200
225|ns| |Fall Time|(IB1= IB2= 1.0 mAdc)
(NPN)
(IB1= IB2= −1.0 mAdc)
(PNP)|tf|−
−|50
75|| 2. Pulse Test: Pulse Width ≤ 300 �� s; Duty Cycle ≤�� .0%. ## **(NPN)** **==> picture [487 x 391] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 �s t1
+10.9 V
300 ns +10.9 V 275 DUTY CYCLE = 2% 275
10 k 10 k
0
-�0.5 V
< 1 ns Cs < 4 pF* 1N916 Cs < 4 pF*
-�9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10 5000
(NPN) 3000 VCC = 40 V (NPN)
7.0 IC/IB = 10
2000
5.0
1000
700
Cibo
500
3.0
300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Q, CHARGE (pC)
CAPACITANCE (pF)
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**Figure 3. Capacitance** **Figure 4. Charge Data** **http://onsemi.com** **3** **MBT3946DW1T1G, SMBT3946DW1T1G** **==> picture [29 x 10] intentionally omitted <==** **----- Start of picture text -----**
(NPN)
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**==> picture [490 x 636] intentionally omitted <==** **----- Start of picture text -----**
500 500
300 IC/IB = 10 300 VCC = 40 V
IC/IB = 10
200 200
100 100
70 tr @ VCC = 3.0 V 70
50 50
30 30
40 V
20 20
15 V
10 10 (NPN)
(NPN) 2.0 V
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time Figure 6. Rise Time
500 500
′
300200 IC/IB = 20 IC/IB = 10 tIB1 s = t= IsB2 - [1] /8 tf 300200 VIB1CC = I = 40 VB2
IC/IB = 20
100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 (NPN) 10 (NPN)
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 � f = 1.0 kHz
IC = 1.0 mA
10 IC = 1.0 mA 12
SOURCE RESISTANCE = 200 � 10 IC = 0.5 mA
8
IC = 0.5 mA IC = 50 �A
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 �A
IC = 50 �A 6
4
4
2 SOURCE RESISTANCE = 500 � 2
IC = 100 �A (NPN) (NPN)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)′s
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
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**Figure 9. Noise Figure** **Figure 10. Noise Figure** **http://onsemi.com** **4** **MBT3946DW1T1G, SMBT3946DW1T1G** ## **(NPN)** ## **h PARAMETERS** (VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C) **==> picture [491 x 375] intentionally omitted <==** **----- Start of picture text -----**
300 100
(NPN) 50 (NPN)
200
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Output Admittance
20 10
10 (NPN) 7.0 (NPN)
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
�
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (x 10 )
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**Figure 13. Input Impedance** **Figure 14. Voltage Feedback Ratio** **==> picture [242 x 177] intentionally omitted <==** **----- Start of picture text -----**
1 � s
1000
100 ms
10 ms 1 ms
100
1 s
(NPN)
10
Single Pulse Test at TA = 25 ° C
1
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (mA)
IC
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**Figure 15. Safe Operating Area** **http://onsemi.com** **5** **MBT3946DW1T1G, SMBT3946DW1T1G** ## **(NPN)** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [489 x 586] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125°C (NPN) VCE = 1.0 V
1.0 +25°C
0.7
-�55°C
0.5
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. DC Current Gain
1.0
(NPN) T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 17. Collector Saturation Region
1.2 1.0
TJ = 25°C (NPN) (NPN)
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
�VC FOR VCE(sat)
0.8 0 -�55°C TO +25°C
VBE @ VCE =1.0 V
0.6 -�0.5
-�55°C TO +25°C
0.4 -�1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
°
V, VOLTAGE (VOLTS) COEFFICIENT (mV/ C)
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**Figure 18. “ON” Voltages** **Figure 19. Temperature Coefficients** **http://onsemi.com** **6** **MBT3946DW1T1G, SMBT3946DW1T1G** ## **(PNP)** **==> picture [485 x 107] intentionally omitted <==** **----- Start of picture text -----**
3 V 3 V
< 1 ns
+9.1 V
275 275
< 1 ns
+0.5 V 10 k 10 k
0
Cs < 4 pF* 1N916 Cs < 4 pF*
10.6 V
300 ns 10 < t1 < 500 �s
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%
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* Total shunt capacitance of test jig and connectors **Figure 20. Delay and Rise Time Equivalent Test Circuit** **Figure 21. Storage and Fall Time Equivalent Test Circuit** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [239 x 377] intentionally omitted <==** **----- Start of picture text -----**
10
(PNP)
7.0
5.0 Cobo
Cibo
3.0
2.0
1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
REVERSE BIAS (VOLTS)
Figure 22. Capacitance
500
(PNP) IC/IB = 10
300
200
100
70
50 tr @ VCC = 3.0 V
30 15 V
20
40 V
10 2.0 V
7 td @ VOB = 0 V
5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
CAPACITANCE (pF)
TIME (ns)
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**Figure 24. Turn-On Time** **==> picture [240 x 197] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V (PNP)
IC/IB = 10
2000
1000
700
500
300
200 QT
QA
100
70
50
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Q, CHARGE (pC)
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**Figure 23. Charge Data** **==> picture [243 x 170] intentionally omitted <==** **----- Start of picture text -----**
500
300 (PNP) VCC = 40 V
200 IB1 = IB2
IC/IB = 20
100
70
50
30
20 IC/IB = 10
10
7
5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
f
t , FALL TIME (ns)
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**Figure 25. Fall Time** **http://onsemi.com** **7** **MBT3946DW1T1G, SMBT3946DW1T1G** ## **(PNP)** ## **TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** - (VCE = −5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz) **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**
5.0 12
SOURCE RESISTANCE = 200 � f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 � IC = 0.5 mA
IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 �A 6
2.0
4 IC = 50 �A
1.0 SOURCE RESISTANCE = 2.0 kIC = 100 �A 2 IC = 100 �A
(PNP)
(PNP)
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
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**Figure 26.** **Figure 27.** ## **h PARAMETERS** - (VCE = −10 Vdc, f = 1.0 kHz, TA = 25 ° C) **==> picture [490 x 363] intentionally omitted <==** **----- Start of picture text -----**
300 100
(PNP) 70 (PNP)
50
200
30
100 20
70
10
50
7
30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 28. Current Gain Figure 29. Output Admittance
20 10
10 (PNP) 7.0 (PNP)
7.0 5.0
5.0
3.0
3.0
2.0
2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
�
fe
h , DC CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (x 10 )
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**Figure 30. Input Impedance** **Figure 31. Voltage Feedback Ratio** **http://onsemi.com** **8** **MBT3946DW1T1G, SMBT3946DW1T1G** ## **(PNP)** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [491 x 596] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = +125°C VCE = 1.0 V
+25°C
1.0
0.7
-�55°C
0.5
0.3
(PNP)
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain
1.0
(PNP) T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 33. Collector Saturation Region
1.0 1.0
TJ = 25°C VBE(sat) @ IC/IB = 10
0.8 VBE @ VCE = 1.0 V 0.5 �VC FOR VCE(sat) +25°C TO +125°C
0
0.6 -�55°C TO +25°C
(PNP) -�0.5 (PNP)
0.4 +25°C TO +125°C
-�1.0
VCE(sat) @ IC/IB = 10 -�55°C TO +25°C
0.2
-�1.5 �VB FOR VBE(sat)
0 -�2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN (NORMALIZED)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
°
V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENTS (mV/ C)
V
�
**----- End of picture text -----**
**Figure 34. “ON” Voltages** **Figure 35. Temperature Coefficients** **http://onsemi.com** **9** **MBT3946DW1T1G, SMBT3946DW1T1G** **==> picture [240 x 176] intentionally omitted <==** **----- Start of picture text -----**
1 � s
1000
100 ms
10 ms 1 ms
100
1 s
(PNP)
10
Single Pulse Test at TA = 25 ° C
1
1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (mA)
IC
**----- End of picture text -----**
**Figure 36. Safe Operating Area** **http://onsemi.com** **10** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y **==> picture [479 x 420] intentionally omitted <==** **----- Start of picture text -----**
1
SCALE 2:1 2X DATE 11 DEC 2012
aaa H D
- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
6 5 4 THE PLASTIC BODY AND DATUM H.
L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.
E E1 DETAIL A 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
1 2 3
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
bbb H D 2X 3 TIPS RADIUS OF THE FOOT.
e MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
B l= 6X b : A −−− −−− 1.10 −−− −−− 0.043
ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004
TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039
b 0.15 0.20 0.25 0.006 0.008 0.010
C 0.08 0.15 0.22 0.003 0.006 0.009
A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086
A E 2.00 2.10 2.20 0.078 0.082 0.086
E1 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC 0.026 BSC
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
6X ccc C ccc 0.10 0.004
(tll, A1 C A SEATINGPLANE Ma c === ddd 0.10 0.004
SIDE VIEW END VIEW GENERIC
MARKING DIAGRAM*
RECOMMENDED 6
SOLDERING FOOTPRINT*
6X 6X XXXM
0.30 0.66
1
Ta os 2.50 XXX = Specific Device Code
M = Date Code*
= Pb−Free Package
0.65 yo (Note: Microdot may be in either location)
PITCH
**----- End of picture text -----**
## DATE 11 DEC 2012 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. - *Date Code orientation and/or position may vary depending upon manufacturing location. **==> picture [83 x 5] intentionally omitted <==** **----- Start of picture text -----**
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** **DOCUMENT NUMBER: 98ASB42985B** **DESCRIPTION: SC−88/SC70−6/SOT−363** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 2** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 ## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y ## DATE 11 DEC 2012 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. |**DOCUMENT NUMBER:**|**98ASB42985B**|Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.|Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.| |---|---|---|---| |**DESCRIPTION:**|**SC−88/SC70−6/SOT−363**||**PAGE 2 OF 2**| ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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