# Bipolar Transistor Array, Dual PNP, 40 V, 200 mA

![Product image](https://novapart.co/image/farnell:3617515/)

**URL**: https://novapart.co/products/SMBT3906DW1T1G/bipolar-transistor-array-dual-pnp-40-v-200-ma
**SKU**: SMBT3906DW1T1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0640
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual PNP |
| Power Dissipation Npn | - |
| Power Dissipation Pnp | 150mW |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | - |
| Transition Frequency Pnp | 250MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | - |
| Dc Current Gain Hfe Min Pnp | 100hFE |
| Continuous Collector Current Npn | - |
| Continuous Collector Current Pnp | 200mA |
| Collector Emitter Voltage Max Npn | - |
| Collector Emitter Voltage Max Pnp | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3617515/)

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## Dual General Purpose Transistor 

## MBT3906DW1 

The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. 

## **Features** 

- hFE, 100-300 

- Low VCE(sat),  0.4 V 

- Simplifies Circuit Design 

- Reduces Board Space 

- Reduces Component Count 

- Available in 8 mm, 7-inch/3,000 Unit Tape and Reel 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

**SOT−363/SC−88 CASE 419B STYLE 1** 

## **MARKING DIAGRAM** 

**==> picture [82 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>XX M<br>1<br>XX = Device Code<br>M = Date Code<br>= Pb - Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. 

- These Devices are  Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage|VCEO|−40|Vdc|
|Collector-Base Voltage|VCBO|−40|Vdc|
|Emitter-Base Voltage|VEBO|−5.0|Vdc|
|Collector Curren-Continuous|IC|−200|mAdc|
|Electrostatic Discharge|ESD|HBM Class 2<br>MM Class B||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

**==> picture [279 x 114] intentionally omitted <==**

- *For additional information on our Pb - Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D 

Publication Order Number: **MBT3906DW1T1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2013 **July, 2025 − Rev. 8** 

## **MBT3906DW1** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||
|Collector-Emitter Breakdown Voltage (Note 2)<br>Collector-Base Breakdown Voltage<br>Emitter-Base Breakdown Voltage<br>Base Cutoff Current<br>Collector Cutoff Current<br>**ON CHARACTERISTICS**(Note 2)<br>DC Current Gain<br>~~——~~|V(BR)CEO<br>V(BR)CBO<br>V(BR)EBO<br>IBL<br>ICEX<br>hFE|−40<br>−<br>Vdc<br>−40<br>−<br>Vdc<br>−5.0<br>−<br>Vdc<br>−<br>−50<br>nAdc<br>−<br>−50<br>nAdc<br>−<br>~~Ee~~|||
|(IC= −0.1 mAdc, VCE= −1.0 Vdc)||60|−||
|(IC= −1.0 mAdc, VCE= −1.0 Vdc)||80|−||
|(IC= −10 mAdc, VCE= −1.0 Vdc)||100|300||
|(IC= −50 mAdc, VCE= −1.0 Vdc)||60|−||
|(IC= −100 mAdc, VCE= −1.0 Vdc)||30|−||
|Collector−Emitter Saturation Voltage|VCE(sat)|||Vdc|
|(IC= −10 mAdc, IB= −1.0 mAdc)||−|−0.25||
|(IC= −50 mAdc, IB= −5.0 mAdc)||−|−0.4||
|Base−Emitter Saturation Voltage|VBE(sat)|||Vdc|
|(IC= −10 mAdc, IB= −1.0 mAdc)||−0.65|−0.85||
|(IC= −50 mAdc, IB= −5.0 mAdc)||−|−0.95||
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current-Gain-Bandwidth Product|fT|250|−|MHz|
|Output Capacitance|Cobo|−|4.5|pF|
|Input Capacitance|Cibo|−|10.0|pF|
|Input Impedance|hie|||k|
|(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)||2.0|12||
|Voltage Feedback Ratio|hre|||X 10−4|
|(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)||0.1|10||
|Small−Signal Current Gain<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>hfe<br>100<br>400<br>−<br>Output Admittance<br>(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)<br>hoe<br>3.0<br>60<br>mhos<br>Noise Figure<br>(VCE= −5.0 Vdc, IC= −100 Adc, RS= 1.0 k<br>f = 1.0 kHz)<br>NF<br>−<br>4.0<br>dB<br>**SWITCHING CHARACTERISTICS**<br>Delay Time<br>(VCC= −3.0 Vdc, VBE= 0.5 Vdc)<br>td<br>−<br>35<br>ns<br>Rise Time<br>(IC= −10 mAdc, IB1= −1.0 mAdc)<br>tr<br>−<br>35<br>Storage Time<br>(VCC= −3.0 Vdc, IC= −10 mAdc)<br>ts<br>−<br>225<br>ns<br>Fall Time<br>(IB1= IB2= −1.0 mAdc)<br>tf<br>−<br>75<br>2. Pulse Test: Pulse Width300<br>s; Duty Cycle2.0%.<br>~~ee~~|||||
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**MBT3906DW1** 

**==> picture [485 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 V 3 V<br>< 1 ns<br>+9.1 V ~~<br>275 275<br>+0.5 V | < < 1 ns 10 k 10 k<br>0<br>ots Cs < 4 pF* 1N916 oT. Cs < 4 pF*<br>10.6 V — - d - d<br>Te DUTY CYCLE = 2%300 ns af= 10 < t1 < 500 s » > | t1 =WL 10.9 V tL= =<br>DUTY CYCLE = 2%<br>**----- End of picture text -----**<br>


- Total shunt capacitance of test jig and connectors 

**Figure 1. Delay and Rise Time Equivalent Test Circuit** 

**Figure 2. Storage and Fall Time Equivalent Test Circuit** 

## **TYPICAL TRANSIENT CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
TJ = 25  C<br>TJ = 125  C<br>10 5000<br>Sass ee 3000 VCC = 40 V a<br>7.0 IC/IB = 10<br>2000<br>a<br>St EH Po or [eS]<br>5.0 nee Cobo 1000 Ee ea||<br>700<br>PS Cibo re<br>PL 500 re<br>3.0<br>OSE EE ee eee ee<br>300<br>2.0 200 QT<br>TE EE co 100 Per S STeeCAI e rr , QA a<br>70 rt<br>1.0 50 a eee eeeeee<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Capacitance Figure 4. Charge Data<br>500 EN eee eee 500 YP NON TTT Ty hm LT<br>300 NED  NSE eee IC/IB = 10 300 LNT tt VCC = 40 V<br>200 ANNE 200 ah  aS IB1 = IB2<br>IC/IB = 20<br>SSSESCHIE IN S<br>100 100<br>SERS Eee ttt Nt<br>70 70<br>50 FANNERPT SEIS tr @ VCC = 3.0 V 50 PEE EERSSEHS<br>} ff ASREEPRAEKSEE SENY y 7SF|_ | pota eeee SAASOe eee<br>30 15 V 30<br>20 NNFEENNGN EE a 20 | | | TE IC/I | B = 10 PSSST TY<br>NNID SSOSEATIE Ori BSS<br>40 V<br>10 a ptPe ft 2.0 V __ | 10 a a eee eee<br>7 a ee | td @ VOB = 0 V 2 | 7 Ee ee ee |<br>5 a ee ee LT tiiy 5 a eee<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Q, CHARGE (pC)<br>CAPACITANCE (pF)<br>TIME (ns) f<br>t  , FALL TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 5. Turn−On Time** 

**Figure 6. Fall Time** 

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**MBT3906DW1** 

## **TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS** 

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**----- Start of picture text -----**<br>
(VCE = −5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5.0 12<br>SOURCE RESISTANCE = 200  f = 1.0 kHz IC = 1.0 mA<br>IC = 1.0 mA TLL CT eA<br>TTT 10 im ALT<br>4.0<br>SOURCE RESISTANCE = 200  IC = 0.5 mA<br>NT VT TTY<br>X TI IC = 0.5 mA al fTiil 8 pptmam meniiil ViteZs<br>PINE a All<br>3.0<br>ONY SOURCE RESISTANCE = 2.0 k alll POCO IZ<br>2.0 NESTORsZ| —_| IC = 50 A 7 6 NCCTSNEEDNI EL T_TVg<br>SSS 4 IC = 50 A T<br>SSStt SSPEPt TT T<br>1.0 SOURCE RESISTANCE = 2.0 kIC = 100 A Trt 2 PN IC = 100 A<br>" ET || Seeriis —acine<br>0 PIE ill 0 ECELL CE Co n<br>0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100<br>f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 7.** 

**Figure 8.** 

## **h PARAMETERS** 

**==> picture [160 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
300 PL [LEE] EE 10070 ssSea eeOO GOO OB ”<br>200 PLT EET 50 ee ee eeAeee e e<br>30<br>|<br>100 omPta |EH 20 YFEL| ft ftELLETELLTALEPELL<br>70 ee ee eee eee eee pra<br>a ae all<br>10<br>50 eel ee<br>en 7 SS<br>30 5 a eeeee ee e<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Current Gain Figure 10. Output Admittance<br>20 10 a ee<br>10 ERSTE ETC = 7.0 RSE RHEEee rr<br>a ee ee eee N<br>7.0 5.0<br>SEES SS | ENE<br>5.0 oe ee NT EC<br>3.0<br>3.0 Sn EEE SUE OS<br>2.0<br>SEES 2.0 ECE<br>eS Nl<br>1.0<br>0.7 =] SSS aaaNK emN\ "<br>Ee 1.0 S All|<br>0.5<br>= eeee ee eee e e e e e 0.7 aee<br>0.3<br>oh HE HE HH<br>0.2 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>mhos)<br>fe<br>h    , DC CURRENT GAIN<br>oe<br>h    , OUTPUT ADMITTANCE (<br>-4<br>ie<br>h    , INPUT IMPEDANCE (k OHMS)<br>re<br>h    , VOLTAGE FEEDBACK RATIO (x 10   )<br>**----- End of picture text -----**<br>


**Figure 11. Input Impedance** 

**Figure 12. Voltage Feedback Ratio** 

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**MBT3906DW1** 

## **TYPICAL STATIC CHARACTERISTICS** 

**==> picture [491 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>TJ = +125  C VCE = 1.0 V<br>se<br>+25  C<br>1.0 e e e<br>——— ee ee<br>0.7 pe  C ee T T<br>ee O a a Da ey<br>0.5 a ee ee ee SN ee e<br>0.3 o e [EP] rTS<br>0.2 Pt] [TAA] NT<br>A ANN<br>NN<br>ee<br>0.1 ee N<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (mA)<br>Figure 13. DC Current Gain<br>1.0<br>a0 T J  = 25  C<br>0.8<br>a IC = 1.0 mA A | 10 mA OOO 30 mA OO Yo 100 mA<br>A8<br>0.6 a6<br>0.4<br>[NR<br>KN<br>0.2<br>OS ST<br>PASSES EET TE SEEPS<br>0 er tr<br>0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IB, BASE CURRENT (mA)<br>Figure 14. Collector Saturation Region<br>1.0 1.0<br>TJ = 25  C VBE(sat) @ IC/IB = 10<br>0.8 rdee VBE @ VCE = 1.0 V 0.5 a VC [ FOR V] CE(sat) +25  C TO +125  C<br>a ess —— n e pe TT |<br>0<br>0.6 PT SSS SET  C TO +25  C TT<br>CCI TU | TE s eee s a<br>0.4 CIP rr +25  C TO +125  C<br>PPI VCE(sat) Pe)  @ IC/IB = 10 efe r  C TO +25  C<br>0.2 Ed a an pis VB [ FOR V] BE(sat)<br>FT Ti | Pi ft Me Se Ht<br>0 FEITTt Ti tT | le ooH_t__ [1 [| | | | [ | J<br>1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>FE<br>h     , DC CURRENT GAIN (NORMALIZED)<br>CE<br>V     , COLLECTOR EMITTER VOLTAGE (VOLTS)<br><br>V, VOLTAGE (VOLTS)<br>, TEMPERATURE COEFFICIENTS (mV/  C)<br>V<br>**----- End of picture text -----**<br>


**Figure 15. “ON” Voltages** 

**Figure 16. Temperature Coefficients** 

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**MBT3906DW1** 

## **DEVICE ORDERING INFORMATION** 

|**Device**<br>~~ee~~<br>~~fie~~|**Marking**<br>~~ee~~<br>~~fie~~|**Pin Out**<br>~~ee~~<br>Ge|**Package**<br>~~ee~~|**Shipping**†<br>~~ee~~|
|---|---|---|---|---|
|MBT3906DW1T1G<br>~~ee~~<br>~~fie~~|A2<br>~~ee~~<br>~~fie~~|~~ee~~<br>Ge|SOT−363<br>(Pb−Free)<br>~~ee~~|3000 / Tape & Reel<br>~~ee~~|
|SMBT3906DW1T1G<br>~~ft~~<br>~~|~~|A2<br>~~ft~~<br>~~|~~|~~se~~|SOT−363<br>(Pb−Free)<br>fee<br>~~se~~|3000 / Tape & Reel<br>fee|
|SMBT3906DW3T1G<br>~~|~~|A3<br>~~|~~|~~se~~|SOT−363<br>(Pb−Free)<br>~~se~~|3000 / Tape & Reel|



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**MBT3906DW1** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>8<br>Rebranded the Data Sheet to**onsemi**format<br>7/7/2025<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z 

## DATE 18 APR 2024 

**==> picture [164 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>6<br>io o<br>XXXM<br>1 UU U<br>XXX = Specific Device Code<br>M = Date Code*<br>: = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or position may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**==> picture [169 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
DOCUMENT NUMBER: 98ASB42985B<br>**----- End of picture text -----**<br>


## **SC−88 2.00x1.25x0.90, 0.65P** 

## **PAGE 1 OF 2** 

## 

## **DESCRIPTION:** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

 Semiconductor Components Industries, LLC, 2019 

## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z 

## DATE 18 APR 2024 

|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|



Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. 

**==> picture [492 x 37] intentionally omitted <==**

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42985B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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www.onsemi.com 

 Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

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## Links

- [View this product on Novapart](https://novapart.co/products/SMBT3906DW1T1G/bipolar-transistor-array-dual-pnp-40-v-200-ma)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/smbt3906dw1t1g/dual-pnp-bipolar-transistor/dp/3617515)
---

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