# Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 330 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1056538/)

**URL**: https://novapart.co/products/SMBT2907AE6327HTSA1/bipolar-bjt-single-transistor-pnp-60-v-600-ma-330
**SKU**: SMBT2907AE6327HTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0430
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 330mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1056538/)

**SMBT2907A/MMBT2907A** 

## **PNP Silicon Switching Transistor** 

- Low collector-emitter saturation voltage 

- Complementary type: 

SMBT2222A / MMBT2222A (NPN) 

**==> picture [116 x 32] intentionally omitted <==**

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3 2<br>1<br>**----- End of picture text -----**<br>


- Pb-free (RoHS compliant) package[1)] 

- Qualified according AEC Q101 

|**Maximum Ratings**|~~e~~e|eee||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~e~~e<br>~~e~~e|**Value**<br>eee<br>eee|**Unit**|
|Collector-emitter voltage|_V_CEO<br>~~e~~e <br>~~e~~e<br>~~e~~e|60<br> eee<br>eee<br>ee|V|
|Collector-base voltage|_V_CBO<br>~~e~~e <br>~~e~~e<br>~~e~~e|60<br> eee<br>ee<br>eee||
|Emitter-base voltage|_V_EBO<br>~~e~~e<br>~~e~~e<br>~~e~~e|5<br>ee<br>eee<br>ee||
|Collector current|_I_C<br>~~e~~e <br>~~e~~e<br>~~e~~e|600<br> eee<br>ee<br>ee|mA|
|Base current|_I_B<br>~~e~~e<br>~~e~~e<br>~~e~~e|100<br>ee<br>ee<br>eee||
|Peak base current|_I_BM<br>~~e~~e<br>~~e~~e|200<br>ee<br>eee||
|Total power dissipation<br>_T_S ≤77 °C|_P_tot<br>~~e~~e <br>~~ee~~|330<br> eee<br>~~eee~~|mW|
|Junction temperature|_T_j<br>~~ee~~<br>~~ee~~|150<br>~~eee~~<br>~~ee~~|°C|
|Storage temperature|j<br>_T_stg<br>~~ee ~~<br>~~ee~~|-65 ... 150<br> ~~eee~~<br>~~ee~~||



1Pb-containing package may be available upon special request 

> 2For calculation of _R_ thJA please refer to Application Note Thermal Resistance 

1 

**SMBT2907A/MMBT2907A** 

**Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C, unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|<br>**Parameter**|<br>**Symbol**|<br>**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 10 mA,_I_B= 0|_V_(BR)CEO|60|-|-|V|
|Collector-base breakdown voltage<br>_I_C= 10 µA,_I_E= 0|_V_(BR)CBO|60|-|-||
|Emitter-base breakdown voltage<br>_I_E= 10 µA,_I_C= 0|_V_(BR)EBO|5|-|-||
|Collector-base cutoff current<br>_V_CB= 50 V,_I_E= 0<br>_V_CB= 50 V,_I_E= 0 ,_T_A= 150 °C|_I_CBO|-<br>-|-<br>-|0.01<br>10|µA|
|Emitter-base cutoff current<br>_V_EB= 5 V,_I_C= 0|_I_EBO|-|-|10|nA|
|DC current gain1)<br>_I_C= 100 µA,_V_CE= 10 V<br>_I_C= 1 mA,_V_CE= 10 V<br>_I_C= 10 mA,_V_CE= 10 V<br>_I_C= 150 mA,_V_CE= 10 V<br>_I_C= 500 mA,_V_CE= 10 V|_h_FE|75<br>100<br>100<br>100<br>50|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>300<br>-|-|
|Collector-emitter saturation voltage1)<br>_I_C= 150 mA,_I_B= 15 mA<br>_I_C= 500 mA,_I_B= 50 mA|_V_CEsat|-<br>-|-<br>-|0.4<br>1.6|V|
|Base emitter saturation voltage-1)<br>_I_C= 150 mA,_I_B= 15 mA<br>_I_C= 500 mA,_I_B= 50 mA|_V_BEsat|-<br>-|-<br>-|1.3<br>2.6||



1Puls test: t ≤ 300µs, D = 2% 

2 

**SMBT2907A/MMBT2907A** 

|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**||||||
|Transition frequency<br>_I_C= 20 mA,_V_CE= 20 V,_f_= 100 MHz|_f_T|200|-|-|MHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|-|8|pF|
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz|_C_eb|-|-|30||
|Delay time<br>_V_CC= 30 V,_I_C= 150 mA,_I_B1= 15 mA,<br>_V_BE(off)= 0.5 V|_t_d|-|-|10|ns|
|Rise time<br>_V_CC= 30 V,_I_C= 150 mA,_I_B1= 15 mA,<br>_V_BE(off)= 0.5 V|_t_r|-|-|40||
|Storage time<br>_V_CC= 30 V,_I_C= 150 mA,_I_B1=_I_B2= 15mA|_t_stg|-|-|80||
|Fall time<br>_V_CC= 30 V,_I_C= 150 mA,_I_B1=_I_B2= 15mA|_t_f|-|-|30||



3 

**Package SOT23** 

**SMBT2907A/MMBT2907A** 

## Package Outline 

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1±0.1<br>2.9 ±0.1 0.1 MAX.<br>B<br>3<br>1 2<br>+0.1 1)<br>0.4 -0.05 A<br>C<br>0.95<br>1.9<br>0.25 M B C 0.2 M A<br>1) Lead width can be 0.6 max. in dambar area<br>0.8<br>0.8 1.2<br>Manufacturer<br>2005, June<br>EH s Date code (YM)<br>Pin 1 BCW66<br>Type code<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.3<br>0.9<br>**----- End of picture text -----**<br>


## Foot Print 

## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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4<br>0.9 0.2<br>Pin 1 3.15 1.15<br>2.13 2.65<br>8<br>**----- End of picture text -----**<br>


8 



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