# TVS Diode, Transil SMBJ, Bidirectional, 6.5 V, 11.2 V, DO-214AA (SMB), 2 Pins ![Product image](https://novapart.co/image/farnell:2454106RL/) **URL**: https://novapart.co/products/SMBJ6V5CA/tvs-diode-transil-smbj-bidirectional-65-v-112-do **SKU**: SMBJ6V5CA **Manufacturer**: ONSEMI **Category**: Circuit Protection || TVS - Transient Voltage Suppressors || TVS Diodes **Price**: €0.1980 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Tvs Polarity | Bidirectional | | Product Range | Transil SMBJ | | Diode Mounting | Surface Mount | | Diode Case Style | DO-214AA (SMB) | | Clamping Voltage Max | 11.2V | | Reverse Standoff Voltage | 6.5V | | Maximum Breakdown Voltage | 7.98V | | Minimum Breakdown Voltage | 7.22V | | Operating Temperature Max | 150°C | | Peak Pulse Power Dissipation | 600W | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2454106RL/) **==> picture [64 x 7] intentionally omitted <==** **----- Start of picture text -----**
November 2014
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# **SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors** ## **Features** - Glass-Passivated Junction - 600 W Peak Pulse Power Capability - on 10/1000 μ s Waveform. - Excellent Clamping Capability - Low-Incremental Surge Resistance - Fast Response Time: Typically Less than 1.0 ps from 0 V - to BV minimum for Unidirectional and 5.0 ns for Bidirectional - Typical IR Less than 1.0 μ A Above 10 V **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**
SMB/DO-214AA
**----- End of picture text -----**
Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in both directions suitable for bi-directional applications. - UL Certificate #E258596 ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PPPM|Peak Pulse Power Dissipation on 10/1000μs Waveform|600|W| |IPPM|Peak Pulse Current on 10/1000μs Waveform|See Table|A| |IFSM|Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)(1)|100|A| |TSTG|Storage Temperature Range|-55 to 150|°C| |TJ|Operating Junction Temperature Range|-55 to 150|°C| ## **Note:** 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**
**Bi-Directional (C)**
**Device**|**Part**
**Marking**(2)|**Reverse**
**Stand-Off**
**Voltage**
**VRWM (V)**|**Breakdown**
**Voltage**
**VBR(V)**|**Breakdown**
**Voltage**
**VBR(V)**|**Test**
**Current**
**IT (mA)**|**Clamping**
**Voltage**
**at IPPM**
**VC (V)**|**Peak Pulse**
**Current**
**IPPM (A)**|**Reverse**
**Leakage**
**at VRWM**
**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ5V0(C)A|KE|5.0|6.40|7.00|10|9.2|65.2|800| |SMBJ6V0(C)A|KG|6.0|6.67|7.37|10|10.3|58.3|800| |SMBJ6V5(C)A|KK|6.5|7.22|7.98|10|11.2|53.6|500| |SMBJ7V0(C)A|KM|7.0|7.78|8.60|10|12.0|50.0|200| |SMBJ7V5(C)A|KP|7.5|8.33|9.21|1|12.9|46.5|100| |SMBJ8V0(C)A|KR|8.0|8.89|9.83|1|13.6|44.1|50| |SMBJ8V5(C)A|KT|8.5|9.44|10.4|1|14.4|41.7|20| |SMBJ9V0(C)A|KV|9.0|10.0|11.1|1|15.4|39.0|10| |SMBJ10(C)A|KX|10|11.1|12.8|1|17.0|35.3|5| |SMBJ11(C)A|KZ|11|12.2|13.5|1|18.2|33.0|5| |SMBJ12(C)A|LE|12|13.3|14.7|1|19.9|30.2|5| |SMBJ13(C)A|LG|13|14.4|15.9|1|21.5|27.9|5| |SMBJ14(C)A|LK|14|15.6|17.2|1|23.2|25.9|5| |SMBJ15(C)A|LM|15|16.7|18.5|1|24.4|24.6|5| |SMBJ16(C)A|LP|16|17.8|19.7|1|26.0|23.1|5| |SMBJ17(C)A|LR|17|18.9|20.9|1|27.6|21.7|5| |SMBJ18(C)A|LT|18|20.0|22.1|1|29.2|20.5|5| |SMBJ20(C)A|LV|20|22.2|24.5|1|32.4|18.5|5| |SMBJ22(C)A|LX|22|24.4|26.9|1|35.5|16.9|5| |SMBJ24(C)A|LZ|24|26.7|29.5|1|38.9|15.4|5| |SMBJ26(C)A|ME|26|28.9|31.9|1|42.1|14.3|5| |SMBJ28(C)A|MG|28|31.1|34.4|1|45.4|13.2|5| |SMBJ30(C)A|MK|30|33.3|36.8|1|48.4|12.4|5| |SMBJ33(C)A|MM|33|36.7|40.6|1|53.3|11.3|5| |SMBJ36(C)A|MP|36|40.0|44.2|1|58.1|10.3|5| |SMBJ40(C)A|MR|40|44.4|49.1|1|64.5|9.3|5| |SMBJ43(C)A|MT|43|47.8|52.8|1|69.4|8.6|5| |SMBJ45(C)A|MV|45|50.0|55.3|1|72.7|8.3|5| |SMBJ48(C)A|MX|48|53.3|58.9|1|77.4|7.8|5| |SMBJ51(C)A|MZ|51|56.7|62.7|1|82.4|7.3|5| |SMBJ54(C)A|NE|54|60.0|66.3|1|87.1|6.9|5| |SMBJ58(C)A|NG|58|64.4|71.2|1|93.6|6.4|5| |SMBJ60(C)A|NK|60|66.7|73.7|1|96.8|6.2|5| |SMBJ64(C)A|NM|64|71.1|78.6|1|103.0|5.8|5| |SMBJ70(C)A|NP|70|77.8|86.0|1|113.0|5.3|5| |SMBJ75(C)A|NR|75|83.3|92.1|1|121.0|5.0|5| |SMBJ78(C)A|NT|78|86.7|95.8|1|126.0|4.8|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 2 ## **Electrical Characteristics** (Continued) Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**
**Bi-Directional (C)**
**Device**|**Part**
**Marking**(2)|**Reverse**
**Stand-Off**
**Voltage**
**VRWM (V)**|**Breakdown**
**Voltage**
**VBR(V)**|**Breakdown**
**Voltage**
**VBR(V)**|**Test**
**Current**
**IT (mA)**|**Clamping**
**Voltage**
**at IPPM**
**VC (V)**|**Peak Pulse**
**Current**
**IPPM (A)**|**Reverse**
**Leakage**
**at VRWM**
**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ85(C)A|NV|85|94.4|104.0|1|137.0|4.4|5| |SMBJ90(C)A|NX|90|100.0|111.0|1|146.0|4.1|5| |SMBJ100(C)A|NZ|100|111.0|123.0|1|162.0|3.7|5| |SMBJ110(C)A|PE|110|122.0|135.0|1|177.0|3.4|5| |SMBJ120(C)A|PG|120|133.0|147.0|1|193.0|3.1|5| |SMBJ130(C)A|PK|130|144.0|159.0|1|209.0|2.9|5| |SMBJ150(C)A|PM|150|167.0|185.0|1|243.0|2.5|5| |SMBJ160(C)A|PP|160|178.0|197.0|1|259.0|2.3|5| |SMBJ170(C)A|PR|170|189.0|209.0|1|275.0|2.2|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** **==> picture [418 x 505] intentionally omitted <==** **----- Start of picture text -----**
100 100
T = 25 C A º 75
10 PSHE CSE YF | YN | J [ ff]
UAT TIM [TIM uy LT PT INE Ey
Simca SU 50 SEEN
1
25
EE ee
Aa 0
0.1 0 25 50 75 100 125 150 175 200
0.0001 0.001 0.01 0.1 1 10 AMBIENT TEMPERATURE ( C)º
PULSE WIDTH (ms)
Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve
150 oF| fT Pulse Width T = 25 C A º (td) is Defined _ 60004000 -—+ T = 25 C f = 1.0 MHz A º
Hel tf = 10 μ sec as the Point Where the Peak 2000 SS Visg = 50m Vp-p
Peak Value Current Decays to 50% of Ipp Measured at
100 Ippm | 1000 Se Zero Bias
500
Ppt} Half Value-I +++ pp 4 SH
Measured at
2 200
IN op a Stand-Off PATS
50 10/1000 μ sec Waveform 100 Voltage (V RWM)
as Defined by R.E.A.
50
e-kt
PEt td fF Tf Td 20 a
0 a 10 PELTTEEE EEE
0 1 2 3 4 1 5 10 50 100 200
TIME (ms) REVERSE VOLTAGE (V)
Figure 3. Pulse Waveform Figure 4. Junction Capacitance
200
T = T maxA A
8.3ms Single Half Sine-Wave
JEDEC Method
100
ee
rr ee a ee ee ee
PR
50 a
CPI
20
10
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
PULSE POWER (kW) PULSE POWER (%)
CAPACITANCE (pF)
PEAK PULSE CURRENT (%)
FORWARD SURGE CURRENT (A)
**----- End of picture text -----**
**Figure 5. Non-Repetitive Surge Current** © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 4 **==> picture [573 x 759] intentionally omitted <==** **----- Start of picture text -----**
THIS DRAWING IS THE PROPERTY OF FAIRCHILD SEMICONDUCTOR CORPORATION. NO USE
THEREOF SHALL BE MADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTEDTO FAIRCHILD SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFORMITY REVISIONS
COPIED OR DUPLICATED OR ITS CONTENTS DISCLOSED. THE INFORMATION CONTAINEDWITH SUCH PROPOSALS UNLESS THE CONSENT OF SAID FAIRCHILD SEMICONDUCTOR COR-PORATION HAS PREVIOUSLY BEEN OBTAINED. NO PART OF THIS DRAWING SHALL BE NBR DESCRIPTION DATE BY/APP'D
ON THIS DRAWING IS CONFIDENTIAL AND PROPRIETARY. 1 RELEASED TO DCC 19MAY2008 SDLEE / FSSZ
5.60
B B 0.13 M C B A
5.08
2.50
3.95 2.20
B
3.30 1.91 2.20
4.70
4.75
B
4.05 LAND PATTERN RECOMMENDATION
A
8°
0°
2.65 MAX
A
R0.15 4X
GAUGE
2.45
PLANE
1.90
0.45
0.41
0.30 0.15
0.203 0.05
B 0 -8°
C 0.050
2.15 1.60
0.13 M C B A
1.65 0.75
DETAIL A
NOTES: SCALE 20 : 1
A. EXCEPT WHERE NOTED CONFORMS TO
JEDEC DO214 VARIATION AA.
B DOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. LAND PATTERN STD. DIOM5336X240M. G. DRAWING FILE NAME: DO214AAREV1 DRAWN:APPROVALSBOBOY MALDO 19MAY2008DATE
CHECKED: SD LEE
APPROVED: FRED REN 2LD, SMB, JEDEC
APPROVED:HOWARD ALLEN DO214 VARIATION AA
SCALE SIZE DRAWING NUMBER REV
PROJECTION 1:1 N/A MKT-DO214AA 1
[MM]
INCH FORMERLY: N/A SHEET : 1 OF 1
**----- End of picture text -----**
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