SMBJ60CA
TVS Diode, SMBJ, Bidirectional, 60 V, 96.8 V, DO-214AA (SMB), 2 Pins
- Manufacturer: ONSEMI
- Product type: TVS Diodes
- Diode Mounting: Surface Mount
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 0.274 € |
| Current stock | 10+ |
| Lead time | 30 days |
**==> picture [64 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> November 2014<br>**----- End of picture text -----**<br> # **SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors** ## **Features** - Glass-Passivated Junction - 600 W Peak Pulse Power Capability - on 10/1000 μ s Waveform. - Excellent Clamping Capability - Low-Incremental Surge Resistance - Fast Response Time: Typically Less than 1.0 ps from 0 V - to BV minimum for Unidirectional and 5.0 ns for Bidirectional - Typical IR Less than 1.0 μ A Above 10 V **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SMB/DO-214AA<br>**----- End of picture text -----**<br> Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in both directions suitable for bi-directional applications. - UL Certificate #E258596 ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PPPM|Peak Pulse Power Dissipation on 10/1000μs Waveform|600|W| |IPPM|Peak Pulse Current on 10/1000μs Waveform|See Table|A| |IFSM|Non-Repetitive Peak Forward Surge Current<br>Superimposed on Rated Load (JEDEC Method)(1)|100|A| |TSTG|Storage Temperature Range|-55 to 150|°C| |TJ|Operating Junction Temperature Range|-55 to 150|°C| ## **Note:** 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**<br>**Bi-Directional (C)**<br>**Device**|**Part**<br>**Marking**(2)|**Reverse**<br>**Stand-Off**<br>**Voltage**<br>**VRWM (V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Test**<br>**Current**<br>**IT (mA)**|**Clamping**<br>**Voltage**<br>**at IPPM**<br>**VC (V)**|**Peak Pulse**<br>**Current**<br>**IPPM (A)**|**Reverse**<br>**Leakage**<br>**at VRWM**<br>**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ5V0(C)A|KE|5.0|6.40|7.00|10|9.2|65.2|800| |SMBJ6V0(C)A|KG|6.0|6.67|7.37|10|10.3|58.3|800| |SMBJ6V5(C)A|KK|6.5|7.22|7.98|10|11.2|53.6|500| |SMBJ7V0(C)A|KM|7.0|7.78|8.60|10|12.0|50.0|200| |SMBJ7V5(C)A|KP|7.5|8.33|9.21|1|12.9|46.5|100| |SMBJ8V0(C)A|KR|8.0|8.89|9.83|1|13.6|44.1|50| |SMBJ8V5(C)A|KT|8.5|9.44|10.4|1|14.4|41.7|20| |SMBJ9V0(C)A|KV|9.0|10.0|11.1|1|15.4|39.0|10| |SMBJ10(C)A|KX|10|11.1|12.8|1|17.0|35.3|5| |SMBJ11(C)A|KZ|11|12.2|13.5|1|18.2|33.0|5| |SMBJ12(C)A|LE|12|13.3|14.7|1|19.9|30.2|5| |SMBJ13(C)A|LG|13|14.4|15.9|1|21.5|27.9|5| |SMBJ14(C)A|LK|14|15.6|17.2|1|23.2|25.9|5| |SMBJ15(C)A|LM|15|16.7|18.5|1|24.4|24.6|5| |SMBJ16(C)A|LP|16|17.8|19.7|1|26.0|23.1|5| |SMBJ17(C)A|LR|17|18.9|20.9|1|27.6|21.7|5| |SMBJ18(C)A|LT|18|20.0|22.1|1|29.2|20.5|5| |SMBJ20(C)A|LV|20|22.2|24.5|1|32.4|18.5|5| |SMBJ22(C)A|LX|22|24.4|26.9|1|35.5|16.9|5| |SMBJ24(C)A|LZ|24|26.7|29.5|1|38.9|15.4|5| |SMBJ26(C)A|ME|26|28.9|31.9|1|42.1|14.3|5| |SMBJ28(C)A|MG|28|31.1|34.4|1|45.4|13.2|5| |SMBJ30(C)A|MK|30|33.3|36.8|1|48.4|12.4|5| |SMBJ33(C)A|MM|33|36.7|40.6|1|53.3|11.3|5| |SMBJ36(C)A|MP|36|40.0|44.2|1|58.1|10.3|5| |SMBJ40(C)A|MR|40|44.4|49.1|1|64.5|9.3|5| |SMBJ43(C)A|MT|43|47.8|52.8|1|69.4|8.6|5| |SMBJ45(C)A|MV|45|50.0|55.3|1|72.7|8.3|5| |SMBJ48(C)A|MX|48|53.3|58.9|1|77.4|7.8|5| |SMBJ51(C)A|MZ|51|56.7|62.7|1|82.4|7.3|5| |SMBJ54(C)A|NE|54|60.0|66.3|1|87.1|6.9|5| |SMBJ58(C)A|NG|58|64.4|71.2|1|93.6|6.4|5| |SMBJ60(C)A|NK|60|66.7|73.7|1|96.8|6.2|5| |SMBJ64(C)A|NM|64|71.1|78.6|1|103.0|5.8|5| |SMBJ70(C)A|NP|70|77.8|86.0|1|113.0|5.3|5| |SMBJ75(C)A|NR|75|83.3|92.1|1|121.0|5.0|5| |SMBJ78(C)A|NT|78|86.7|95.8|1|126.0|4.8|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 2 ## **Electrical Characteristics** (Continued) Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**<br>**Bi-Directional (C)**<br>**Device**|**Part**<br>**Marking**(2)|**Reverse**<br>**Stand-Off**<br>**Voltage**<br>**VRWM (V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Test**<br>**Current**<br>**IT (mA)**|**Clamping**<br>**Voltage**<br>**at IPPM**<br>**VC (V)**|**Peak Pulse**<br>**Current**<br>**IPPM (A)**|**Reverse**<br>**Leakage**<br>**at VRWM**<br>**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ85(C)A|NV|85|94.4|104.0|1|137.0|4.4|5| |SMBJ90(C)A|NX|90|100.0|111.0|1|146.0|4.1|5| |SMBJ100(C)A|NZ|100|111.0|123.0|1|162.0|3.7|5| |SMBJ110(C)A|PE|110|122.0|135.0|1|177.0|3.4|5| |SMBJ120(C)A|PG|120|133.0|147.0|1|193.0|3.1|5| |SMBJ130(C)A|PK|130|144.0|159.0|1|209.0|2.9|5| |SMBJ150(C)A|PM|150|167.0|185.0|1|243.0|2.5|5| |SMBJ160(C)A|PP|160|178.0|197.0|1|259.0|2.3|5| |SMBJ170(C)A|PR|170|189.0|209.0|1|275.0|2.2|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** **==> picture [418 x 505] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br> T = 25 C A º 75<br>10 PSHE CSE YF | YN | J [ ff]<br>UAT TIM [TIM uy LT PT INE Ey<br>Simca SU 50 SEEN<br>1<br>25<br>EE ee<br>Aa 0<br>0.1 0 25 50 75 100 125 150 175 200<br>0.0001 0.001 0.01 0.1 1 10 AMBIENT TEMPERATURE ( C)º<br>PULSE WIDTH (ms)<br>Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve<br>150 oF| fT Pulse Width T = 25 C A º (td) is Defined _ 60004000 -—+ T = 25 C f = 1.0 MHz A º<br>Hel tf = 10 μ sec as the Point Where the Peak 2000 SS Visg = 50m Vp-p<br> Peak Value Current Decays to 50% of Ipp Measured at<br>100 Ippm | 1000 Se Zero Bias<br>500<br>Ppt} Half Value-I +++ pp 4 SH<br> Measured at<br> 2 200<br>IN op a Stand-Off PATS<br>50 10/1000 μ sec Waveform 100 Voltage (V RWM)<br>as Defined by R.E.A.<br>50<br> e-kt<br>PEt td fF Tf Td 20 a<br>0 a 10 PELTTEEE EEE<br>0 1 2 3 4 1 5 10 50 100 200<br>TIME (ms) REVERSE VOLTAGE (V)<br>Figure 3. Pulse Waveform Figure 4. Junction Capacitance<br>200<br> T = T maxA A<br> 8.3ms Single Half Sine-Wave<br> JEDEC Method<br>100<br>ee<br>rr ee a ee ee ee<br>PR<br>50 a<br>CPI<br>20<br>10<br>1 2 5 10 20 50 100<br>NUMBER OF CYCLES AT 60Hz<br>PULSE POWER (kW) PULSE POWER (%)<br>CAPACITANCE (pF)<br>PEAK PULSE CURRENT (%)<br>FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br> **Figure 5. Non-Repetitive Surge Current** © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 4 **==> picture [573 x 759] intentionally omitted <==** **----- Start of picture text -----**<br> THIS DRAWING IS THE PROPERTY OF FAIRCHILD SEMICONDUCTOR CORPORATION. NO USE<br>THEREOF SHALL BE MADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTEDTO FAIRCHILD SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFORMITY REVISIONS<br>COPIED OR DUPLICATED OR ITS CONTENTS DISCLOSED. THE INFORMATION CONTAINEDWITH SUCH PROPOSALS UNLESS THE CONSENT OF SAID FAIRCHILD SEMICONDUCTOR COR-PORATION HAS PREVIOUSLY BEEN OBTAINED. NO PART OF THIS DRAWING SHALL BE NBR DESCRIPTION DATE BY/APP'D<br>ON THIS DRAWING IS CONFIDENTIAL AND PROPRIETARY. 1 RELEASED TO DCC 19MAY2008 SDLEE / FSSZ<br>5.60<br>B B 0.13 M C B A<br>5.08<br>2.50<br>3.95 2.20<br>B<br>3.30 1.91 2.20<br>4.70<br>4.75<br>B<br>4.05 LAND PATTERN RECOMMENDATION<br>A<br>8°<br>0°<br>2.65 MAX<br>A<br>R0.15 4X<br>GAUGE<br>2.45<br>PLANE<br>1.90<br> 0.45<br>0.41<br>0.30 0.15<br>0.203 0.05<br>B 0 -8°<br>C 0.050<br>2.15 1.60<br>0.13 M C B A<br>1.65 0.75<br>DETAIL A<br>NOTES: SCALE 20 : 1<br> A. EXCEPT WHERE NOTED CONFORMS TO<br>JEDEC DO214 VARIATION AA.<br>B DOES NOT COMPLY JEDEC STD. VALUE.<br> C. ALL DIMENSIONS ARE IN MILLIMETERS.<br> D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br> E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br> F. LAND PATTERN STD. DIOM5336X240M. G. DRAWING FILE NAME: DO214AAREV1 DRAWN:APPROVALSBOBOY MALDO 19MAY2008DATE<br>CHECKED: SD LEE<br>APPROVED: FRED REN 2LD, SMB, JEDEC<br>APPROVED:HOWARD ALLEN DO214 VARIATION AA<br>SCALE SIZE DRAWING NUMBER REV<br>PROJECTION 1:1 N/A MKT-DO214AA 1<br>[MM]<br>INCH FORMERLY: N/A SHEET : 1 OF 1<br>**----- End of picture text -----**<br> ## ~~—~~ ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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