# SM9994DSO, Dual MOSFET, N Channel, 20V, TSSOP-8

![Product image](https://novapart.co/image/sinopower:SM9994DSO_DUALN_CISS:2000/)

**URL**: https://novapart.co/products/SM9994DSO/sm9994dso-dual-mosfet-n-channel-20v-tssop-8
**SKU**: SM9994DSO
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | Dual N |
| Bv(V) | 20 |
| 4V Max. | 10 |
| Package | TSSOP-8 |
| 2.5V Max. | 13 |
| 3.1V Max. | 11.5 |
| 3.7V Max. | 10.5 |
| Vgs (±V) | 12 |
| Vth(V) Typ. | 0.7 |
| Id (A) Ta=25 | 9 |
| Rg (Ω) Typ. | 1.5 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6549 |
| Ciss (Pf) Typ. | 2000 |
| Coss (Pf) Typ. | 370 |
| Crss (Pf) Typ. | 350 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6549 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6549 |
| Ron(Mω Max) 4.5V Max. | 9.5 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM9994DSO_DUALN_CISS:2000/)

## **SM9994DSO** 

Dual N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 20V/9A, 

   - RDS(ON)= 9.5mΩ(max.) @ VGS= 4.5V RDS(ON)= 10mΩ(max.) @ VGS= 4V 

   - RDS(ON)= 10.5mΩ(max.) @ VGS= 3.7V 

   - RDS(ON)= 11.5mΩ(max.) @ VGS= 3.1V RDS(ON)= 13mΩ(max.) @ VGS= 2.5V 

- Reliable and Rugged 

- ESD Protected 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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D<br>S2<br>S2<br>G2<br>D<br>S1<br>S1<br>G1<br>**----- End of picture text -----**<br>


Top View of TSSOP-8 

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(1) (8)<br>D D<br>(4) (5)<br>G1 G2<br>S1 S2<br>(2)(3) (6)(7)<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

> SM9994DS OO ~~-~~ OU O Package Code O : TSSOP-8 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel (4000ea/reel) Assembly Material G : Halogen and Lead Free Device ~~cE~~ | SM9994DS  O : SM9994 XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. 1 Rev. A.1 - October, 2013 

## **SM9994DSO** 

**Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>~~PO~~|||||
|VDSS<br>~~————————~~|Drain-Source Voltage<br>~~————————~~||20<br>~~————————~~|V<br>~~————————~~<br>|
|VGSS<br>~~————————~~<br>~~a~~|Gate-Source Voltage<br>~~————————~~<br>||±12<br>~~————————~~<br>||
|ID<br>~~el~~|Continuous Drain Current<br>~~el~~|TA=25°C<br>~~el~~|9<br>~~el~~|A<br>~~el~~|
|||TA=70°C<br>~~el~~<br>~~a~~|7.5<br>~~el~~<br>~~a~~||
|IDM<br>~~el~~<br>~~a~~|Continuous Drain Current<br>~~el~~|TA=25°C<br>~~el~~<br>~~a~~|36<br>~~el~~<br>~~a~~|A<br>~~el~~|
|IS<br>~~a~~|Diode Continuous Forward Current<br>||2<br>|A|
|TJ<br>~~Se~~|Maximum Junction Temperature<br>~~Se~~||150<br>~~Se~~|°C<br>~~a~~|
|TSTG<br>~~a~~|Storage Temperature Range<br>~~a~~||-55 to 150<br>~~a~~||
|PD<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TA=25°C<br>~~a~~|1.25<br>~~a~~|W<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~a~~|0.8<br>~~a~~<br>~~a~~||
|RθJA<br>a<br>~~a~~|Thermal Resistance-Junction to Ambient|t≤10s|100|°C/W|



Note a：Surface Mounted on 1in[2] pad area , t ≤ 10s 

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## **SM9994DSO** 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~a~~|~~es~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~a~~<br>~~es~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||20<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~<br>~~I~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ft~~||-<br>~~ee~~<br>~~ftff~~|-<br>~~ee~~<br>~~ff~~|1<br>~~ee~~<br>~~ff~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ft~~|-<br>~~ee~~<br>~~ftff~~|-<br>~~ee~~<br>~~ff~~|30<br>~~ee~~<br>~~ff~~||
|VGS(th)<br>~~I~~<br>~~a~~|Gate Threshold Voltage<br>~~es ee~~|VDS=VGS, IDS=250µA<br>~~ft~~<br>~~ee~~||0.5<br>~~ft ff~~|0.7<br>~~ff~~|1<br>~~ff~~|V|
|IGSS<br>~~a~~|Gate Leakage Current<br>~~es ee~~|VGS=±12V, VDS=0V<br>~~ee~~<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA|
|RDS(ON)<br>b <br>~~a~~|Drain-Source On-state Resistance<br>~~es ee~~|VGS=4.5V, IDS=9A<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|7.6<br>~~ee~~<br>~~ee~~|9.5<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=4V, IDS=8A<br>~~ee ~~<br>~~ee~~<br>~~ee ee~~||-<br> ~~ee~~<br>~~ee~~<br>~~ee~~|7.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=3.7V, IDS=7A<br>~~ee ~~<br>~~ee ee~~<br>~~ee~~||-<br> ~~ee~~<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~<br>~~ee~~|10.5<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=3.1V, IDS=6A<br>~~ee ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.5<br>~~ee~~<br>~~ee~~|11.5<br>~~ee~~<br>~~ee~~||
|||VGS=2.5V, IDS=5A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.5<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~||||||||
|VSD<br>b<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=2A, VGS=0V||-|0.8|1.3|V|
|trr<br>~~a~~<br>~~ee~~|Reverse Recovery Time<br>~~a~~|ISD=5.5A, dlSD/dt=100A/µs<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~||~~|36.5<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|ns<br>~~ee~~<br>~~|~~|
|Qrr<br>~~ee~~|Reverse Recovery Charge|||-<br>~~ee~~<br>~~||~~|30<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|nC<br>~~ee~~<br>~~|~~|
|**Dynamic Characteristics**<br>c<br>~~ee~~<br>~~ee~~<br>~~| ||~~<br>~~PR Re~~||||||||
|RG<br>~~PR Re~~<br>~~ee~~|Gate Resistance<br>~~Re~~|VGS=0V,VDS=0V,f=1MHz<br>~~Re~~<br>~~|~~||-<br>~~Re~~<br>~~|~~|1.5<br>~~Re~~<br>|-<br>~~Re~~<br>|Ω<br>~~Re~~|
|Ciss<br>~~PR Re~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~Re~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~Re~~<br>~~|~~<br>~~ee~~||-<br>~~Re~~<br>~~|~~~~**|**~~|2000<br>~~Re~~<br>~~**|**~~|-<br>~~Re~~<br>~~**|**~~|pF<br>~~Re~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~~~**|**~~<br>~~**|**~~|370<br>~~**|**~~<br>~~**|**~~|-<br>~~**|**~~<br>~~**|**~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~**|**~~<br>~~**|**~~<br>~~ff~~|350<br>~~**|**~~<br>~~**|**~~<br>~~ff~~|-<br>~~**|**~~<br>~~**|**~~<br>~~ff~~||
|td(ON)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~||-<br>~~**|**~~<br>~~ff~~<br>~~Pf~~<br>~~|~~|13<br>~~**|**~~<br>~~ff~~<br>~~Pf~~<br>|24<br>~~**|**~~<br>~~ff~~<br>~~Pf~~<br>|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~ff~~<br>~~Pf~~<br>~~||~~<br>~~sf~~|16<br>~~ff~~<br>~~Pf~~<br>~~|~~<br>~~sf|~~|28.5<br>~~ff~~<br>~~Pf~~<br>~~|~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~Pf~~<br>~~||~~<br>~~sf~~|40<br>~~Pf~~<br>~~|~~<br>~~sf|~~|75<br>~~Pf~~<br>~~|~~<br>~~|~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~|~~<br>~~sf~~<br>~~FL~~|6<br>~~|~~<br>~~sf|~~<br>~~FL~~|11<br>~~|~~<br>~~|~~<br>~~FL~~||
|**Gate Charge Characteristics**<br>c<br>~~ee~~<br>~~sf |~~<br>~~ee~~<br>~~FL~~<br>~~ee~~<br>~~|~~||||||||
|Qg<br>~~ee~~<br>~~es~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=10V, VGS=4.5V,<br>IDS=9A<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~||-<br>~~|tT~~<br>~~||~~|27<br>~~tT~~<br>~~|~~|-<br>~~tT~~<br>~~|~~|nC|
|Qgs<br>~~ee~~<br>~~es~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~|tT~~<br>~~||~~<br>~~||~~|2.5<br>~~tT~~<br>~~|~~<br>~~|~~|-<br>~~tT~~<br>~~|~~<br>~~|~~||
|Qgd<br>~~es~~<br>~~a~~|Gate-Drain Charge|||-<br>~~tT~~<br>~~|~~ ~~|~~<br>~~||~~|11.8<br>~~tT~~<br>~~|~~<br>~~|~~|-<br>~~tT~~<br>~~|~~<br>~~|~~||



Note b：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note c：Guaranteed by design, not subject to production testing. 

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## **SM9994DSO** 

## **Typical Operating Characteristics** 

**Drain Current** 

**Power Dissipation** 

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1.50 10<br>1.25<br>8<br>1.00<br>6<br>0.75<br>4<br>0.50<br>2<br>0.25<br>0.00 TA=25oCA=25oC=25oCoCC 0 TA=25oC,VG=4.5V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (j - Junction Temperature ( - Junction Temperature ( [[o]] C) Tj - Junction Temperature ( [o] C)<br>Safe Operation Area Thermal Transient Impedance<br>300 2<br>100 1 Duty = 0.5<br>0.2<br>0.1<br>10 0.05<br>300µs<br>0.1<br>1ms 0.02<br>1 10ms 0.01<br>100ms<br>0.01<br>0.1 1s<br>Single Pulse<br>DC<br>Mounted on 1in 2  pad<br>0.01 TA=25oC 1E-3 RθJA : 100 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br> - Drain Current (A)<br>ID<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


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1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>TA=25oCA=25oC=25oCoCC<br>0.00<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (j - Junction Temperature ( - Junction Temperature ( [[o]] C)<br> - Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


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## **SM9994DSO** 

## **Typical Operating Characteristics (Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>40 13<br>35 VGS=2,3,4,5,6,7,8,9,10V<br>12<br>V =2.5V<br>30 GS<br>11<br>1.8V<br>25<br>10<br>20<br>9 VGS=3.7V VGS=3.1V<br>15<br>8<br>10<br>1.5V ae VGS=4.5V<br>5 7 V GS =4V<br>0 6 =——<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>30 1.6<br>IDS=9ADS=9A=9A I DS =250µA<br>1.4<br>25<br>1.2<br>20<br>1.0<br>15<br>0.8<br>10<br>0.6<br>5<br>0.4<br>0 0.2<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate-Source Voltage (V)GS - Gate-Source Voltage (V)- Gate-Source Voltage (V) Tj - Junction Temperature ( [o] C)<br>)<br>Ω<br> - Drain Current (A)  - On Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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30<br>IDS=9ADS=9A=9A<br>25<br>20<br>15<br>10<br>5<br>0<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate-Source Voltage (V)GS - Gate-Source Voltage (V)- Gate-Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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## **SM9994DSO** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V GS  = 4.5V<br>1.6  I DS = 9A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 RON@Tj=25oC: 7.6mΩ<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature ( [o] C)<br>Capacitance<br>3600<br>Frequency=1MHz<br>3200<br>2800<br>2400<br>2000 [_] Ciss<br>1600<br>1200<br>800<br>Crss Coss<br>400<br>0<br>0 4 8 12 16 20<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (nC)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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40<br>10<br>T =150 o C<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source-Drain Voltage (V)<br>Gate Charge<br>10<br>V DS =10V<br>9<br> IDS= 9A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 9 18 27 36 45 54<br>QG - Gate Charge (nC)<br>- Source Current (A)<br>IS<br>- Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **SM9994DSO** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>o&<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM9994DSO** 

## **Package Information** 

## **TSSOP-8** 

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D<br>SEE VIEW A<br>NEE 1. C<br>Lt e tt b<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>eras VIEW A<br>SYM MILLIMETERS TSSOP-8 INCHES RECOMMENDED LAND PATTERN<br>BO<br>———— L MIN. MAX. MIN. MAX. 1.0 4<br>A - 1.20 - 0.047<br>A1 0.05 0.15 0.002 0.006<br>A2 0.80 1.05 0.031 0.041<br>a<br>So 7 |<br>a b 0.19 0.30 0.007 0.012<br>6.0<br>c 0.09 0.20 0.004 0.008<br>a<br>D 2.90 3.10 0.114 0.122<br>a<br>E 6.20 6.60 0.244 0.260<br>a<br>0.65<br>E1 4.30 4.50 0.169 0.177<br>i e 0.65 BSC 0.026 BSC |<br>L 0.45 0.75 0.018 0.030<br>0.4<br>a 0 0 ° 8° a 0° 8° T HATa<br>UNIT: mm<br>Note : 1. Follow JEDEC MO-153 AA<br>           2. Dimension "D" does not include mold flash, protrusions<br>               or gate burrs. Mold flash, protrusion or gate burrs shall not<br>               exceed 6 mil per side.<br>           3. Dimension "E1" does not include inter-lead flash or protrusions.<br>               Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>0.25<br>A2 A<br>A1<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013 

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## **SM9994DSO** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TSSOP-8**|330.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|0.10 2.00±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.90±0.20|3.40±0.20|1.60±0.20|



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## **SM9994DSO** 

## **Taping Direction Information** 

## **TSSOP-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013 

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## **SM9994DSO** 

## **Classification Reflow Profiles** 

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**----- Start of picture text -----**<br>
||||
|---|---|---|
|Profile Feature|Sn-Pb Eutectic Assembly|Pb-Free Assembly|
|Preheat & Soak|100 °C|150 °C|
|Temperature min (Tsmin)|150 °C|200 °C|
|Temperature max (Tsmax)|
|60-120 seconds|60-120 seconds|
|Time (Tsmin to Tsmax) (ts)|
|Average ramp-up rate|3 °C/second max.|3°C/second max.|
|(Tsmax to TP)|
|Liquidous temperature (TL)|183 °C|217 °C|
|Time at liquidous (tL)|60-150 seconds|60-150 seconds|
|Peak package body Temperature|
|*|See Classification Temp in table 1|See Classification Temp in table 2|
|(Tp)|
|Time (tP)** within 5°C of the specified|
|20** seconds|30** seconds|
|classification temperature (Tc)|
|Average ramp-down rate (Tp to Tsmax)|6 °C/second max.|6 °C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.|
|** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|

**----- End of picture text -----**<br>


Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ~~—=———~~ ≥2.5 mm 250 °C 245 °C 245 °C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013 

11 

_www.sinopowersemi.com_ 



## Links

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- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM9994DSO)
---

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