# SM6027NSU, Single MOSFET, N Channel, 60V, TO-252-2

![Product image](https://novapart.co/image/sinopower:SM6027NSU_N_CISS:2950/)

**URL**: https://novapart.co/products/SM6027NSU/sm6027nsu-single-mosfet-n-channel-60v-to-252-2
**SKU**: SM6027NSU
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 60 |
| Package | TO-252-2 |
| Vgs (±V) | 25 |
| Vth(V) Typ. | 3 |
| Id (A) Ta=25 | 14 |
| Id (A) Tc=25 | 80 |
| Rg (Ω) Typ. | 1 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6147 |
| Ciss (Pf) Typ. | 2950 |
| Coss (Pf) Typ. | 415 |
| Crss (Pf) Typ. | 200 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6147 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6147 |
| Ron(Mω Max) 10V Max. | 6.4 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM6027NSU_N_CISS:2950/)

> **SM6027NSU** sinopower VX **®** 

N-Channel Enhancement Mode MOSFET ~~a~~ 

## **Features** 

## **Pin Description** 

- 60V/80A[a] , 

- RDS(ON)=6.4mΩ (max.) @ VGS=10V 

- Reliable and Rugged 

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D<br>S<br>G<br>**----- End of picture text -----**<br>


- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

Top View of TO-252 

D 

## **Applications** 

- Secondary Side Synchronous Rectification 

- DC-DC Converter 

- Motor Control 

- Load Switching 

N-Channel MOSFET 

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Ordering and Marking Information<br>SM6027NS Package Code<br>     U : TO-252<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range     TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM6027NS  U : SM6027N XXXXX - Lot Code<br>E e XXXXX |<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

G S 

_www.sinopowersemi.com_ 

1 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

**®** sinopower MA 

## **SM6027NSU** 

## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~I~~<br>~~Ce~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>~~Ce——————Eee~~|||||
|VDSS<br>~~Ce——————Eee~~|Drain-Source Voltage<br>~~——————Eee~~||60<br>~~——————Eee~~|V<br>~~——————Eee~~<br>|
|VGSS<br>~~——————Eee~~<br>~~a~~|Gate-Source Voltage<br>~~——————Eee~~<br>||±25<br>~~——————Eee~~<br>||
|TJ<br>~~——————Eee~~<br>~~ee~~|Maximum Junction Temperature<br>~~——————Eee~~<br>~~ee~~||150<br>~~——————Eee~~<br>~~ee~~|°C<br>~~——————Eee~~<br>~~ee~~<br>|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>||-55 to 150<br>~~ee~~<br>||
|IS<br>~~ee~~|Diode Continuous Forward Current<br>~~ee~~|TC=25°C<br>~~ee~~|40<br>~~ee~~|A<br>~~ee~~|
|ID|Continuous Drain Current|TC=25°C<br>~~a~~|80<br>a<br>~~a~~|A|
|||TC=100°C<br>~~a~~<br>~~a~~|63<br>~~a~~<br>~~a~~||
|IDM<br>b<br>~~aee~~|Pulsed Drain Current<br>~~ee~~|TC=25°C<br>~~ee~~|300<br>~~ee~~||
|PD<br>~~a~~|Maximum Power Dissipation|TC=25°C<br>~~|~~|125<br>~~|~~<br>~~ee~~|W|
|||TC=100°C<br>~~a~~|50<br>~~a~~<br>~~ee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case||1<br>~~ee~~|°C/W|
|ID|Continuous Drain Current<br>~~—_———~~<br>~~a~~|TA=25°C<br>~~—_———~~|14<br>~~—_———~~|A<br>~~—_———~~|
|||TA=70°C<br>~~—_———~~<br>~~a~~|11<br>~~—_———~~<br>~~a~~||
|PD<br>~~a~~|Maximum Power Dissipation|TA=25°C<br>~~|~~|2.5<br>~~|~~<br>~~ee~~|W<br>~~|~~<br>~~a~~|
|||TA=70°C<br>~~a~~|1.6<br>~~a~~<br>~~ee~~||
|RθJA<br>c<br>~~a~~|Thermal Resistance-Junction to Ambient||50<br>~~ee~~|°C/W|
|IAS<br>d<br>~~a~~|Avalanche Current, Single pulse|L=0.5mH|30|A|
|EAS<br>d<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|225|mJ|



Note a：Current limited by bond wire. Note b：Pulse width limited by max. junction temperature. Note c：Surface Mounted on 1in[2] pad area. Note d：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

## **SM6027NSU** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||60<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~PRee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a ee~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA||2|3|4|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current|VGS=±25V, VDS=0V||-|-|±100|nA|
|RDS(ON)<br>e <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=40A||-|5.3|6.4|mΩ|
|**Diode Characteristics**<br>~~ee~~||||||||
|VSD<br>e<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~ee~~|ISD=20A, VGS=0V<br>~~a~~||-<br>~~een~~|0.8<br>~~een~~|1.3<br>~~eee~~|V<br>~~eee~~|
|trr<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~<br>~~es~~<br>~~ee~~|ISD=30A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~ee~~||-<br>~~es~~<br>~~een~~<br>~~Po~~|36<br>~~es~~<br>~~een~~<br>~~Po~~|-<br>~~es~~<br>~~eee~~<br>~~Po~~|ns<br>~~es~~<br>~~eee~~<br>~~Po~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~een~~<br>~~Po~~|53<br>~~es~~<br>~~een~~<br>~~Po~~|-<br>~~es~~<br>~~eee~~<br>~~Po~~|nC<br>~~es~~<br>~~eee~~<br>~~Po~~|
|**Dynamic Characteristics**<br>f<br>~~a~~<br>~~een eee~~<br>~~a~~<br>~~ee~~<br>~~Po~~||||||||
|RG<br>~~I~~<br>~~es~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~||-<br>~~Pt~~|1<br>~~Pt~~|-<br>~~Pt~~|Ω|
|Ciss<br>~~es~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~||-<br>~~Pt~~<br>~~P|~~|2950<br>~~Pt~~<br>~~P|~~|4130<br>~~Pt~~<br>~~P|~~|pF|
|Coss<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~Pt~~<br>~~P|~~<br>~~P|~~|415<br>~~Pt~~<br>~~P|~~<br>~~P|~~|-<br>~~Pt~~<br>~~P|~~<br>~~P|~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~P|~~<br>~~P|~~<br>~~P|~~|200<br>~~P|~~<br>~~P|~~<br>~~P|~~|-<br>~~P|~~<br>~~P|~~<br>~~P|~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~ee~~<br>~~Pp~~||-<br>~~P|~~<br>~~P|~~<br>~~P|~~|27<br>~~P|~~<br>~~P|~~<br>~~P|~~|49<br>~~P|~~<br>~~P|~~<br>~~P|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~P|~~<br>~~P|~~<br>~~|~~|15<br>~~P|~~<br>~~P|~~<br>|27<br>~~P|~~<br>~~P|~~<br>||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~P|~~<br>~~||~~<br>~~Pp~~|55<br>~~P|~~<br>~~|~~|99<br>~~P|~~<br>~~|~~||
|tf<br>~~ee~~<br>~~es~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~||~~<br>~~Pp~~|40<br>~~|~~|72<br>~~|~~||
|**Gate Charge Characteristics**<br>f<br>~~|~~<br>~~es~~<br>~~ee~~<br>~~Pp~~<br>~~a~~<br>~~ee~~<br>~~PT~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=30A<br>~~|~~||-<br>~~PT~~<br>~~po~~|55<br>~~PT~~<br>~~po~~|77<br>~~PT~~<br>~~po~~||
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~PT~~<br>~~po~~<br>~~|~~|15<br>~~PT~~<br>~~po~~|-<br>~~PT~~<br>~~po~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~po~~<br>~~|~~|16<br>~~po~~|-<br>~~po~~||



3 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

## **SM6027NSU** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

**Drain Current** 

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150 100<br>125<br>80<br>100<br>60<br>75<br>40<br>50<br>20<br>25<br>TC=25oC TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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800 2<br>1 Duty = 0.5<br>0.2<br>100 100µs<br>0.1<br>0.1<br>0.05<br>1ms 0.02<br>10 =F 0.01<br>0.01<br>10ms<br>DC<br>1<br>1E-3<br>0.1 TC=25oC 1E-4 Single Pulse RθJC :1 o C/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

4 

## **SM6027NSU** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>150 9<br>125 V GS =5.5,6,7,8,9,10V 8<br>7<br>100<br>5V<br>6<br>V =10V<br>GS<br>75<br>5<br>50<br>4<br>4.5V<br>25<br>3<br>4V<br>0 E- 2<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>24 1.6<br>IDS=40A I DS  =250µA<br>1.4<br>20<br>1.2<br>16<br>1.0<br>12<br>0.8<br>8<br>0.6<br>4<br>0.4<br>0 0.2<br>3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

5 

## **SM6027NSU** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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**----- Start of picture text -----**<br>
Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 40A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 5.3mΩ<br>0.0 2<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>4800<br>Frequency=1MHz<br>4000<br>3200<br>Ciss<br>2400<br>1600<br>800<br>Crss Coss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V =30V<br>DS<br>9  I =30A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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_www.sinopowersemi.com_ 

**®** sinopower WA 

**SM6027NSU** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>oe<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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7 

## **SM6027NSU ®** ~~srrth~~ **Package Information** 

## **TO-252** 

||||||||||||E|E|E|||||||||||||||||||A|A|A|||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||b3||||||||||||||||||||||||||||c2|||||||||||||||||||||||E1||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||L3|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||D||||||||||||||||||||H||||||||||||||||||||||||||||||||||||D1|||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||L4|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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||||||||||||||||||||||||||||||||||||||~~c~~||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||b||||||||e||||||||||||||SEE VIEW A||||||||SEE VIEW A|||||||||||||||||||||||||||||||||||||||||||||||||||||
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||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||GAUGE PLANE|||||||||||||||||0|||||||||||||||||||||||SEATING PLANE|||||||||||TING PLANE|||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||L||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||0.25|||||||||||VIEW A||||||VIEW A|||||||A1||||||||||||||||||||||||||||||||
|**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>0.13<br>A<br>A1<br>**MILLIMETERS**<br>**TO-252-3**<br>**MIN.**<br>**INCHES**<br>2.18<br>0.086<br>-<br>-<br>~~———~~||||||||||||||||||||||||||||||||||||||||**MAX.**<br>0.094<br>0.005||||||||||**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>~~a~~|||||||||||||||||||||||||||||||||||||||
||b|||0.50||||||||||0.89|||||||||0.020|||||||||||||||||0.035|||||||||||||||||||||||||||||||||||||||||||||||||
||b3|||4.95||||||||||5.46|||||||||0.195|||||||||||||||||0.215|||||||||||||||||||||||||||||||||||||||||||6.8 MIN.|6.8 MIN.|||||
|UNIT: mm<br>0.46<br>0.61<br>5.33<br>c<br>c2<br>D<br>D1<br>E<br>2.29 BSC<br>4.57<br>6.35<br>6.73<br>6.22<br>0.090 BSC<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>0.245<br>E1<br>0.035<br>0.070<br>0.410<br>L3<br>H<br>L<br>e<br>9.40<br>0.90<br>0.46<br>0.89<br>1.78<br>10.41<br>0.370<br>0.035<br>0.018<br>0.040<br>L4<br>1.02<br>0.150<br>3.81<br>0.89<br>2.03<br>0.035<br>0.080<br>~~0~~<br>8°<br>0°<br>8°<br>0°<br>6.00<br>6.00<br>0.236<br>0.236<br>3 MIN.<br>6.6<br>1.5 MIN.<br>2.286<br>4.572<br>-<br>-<br>~~SSS~~<br>~~—— ~~a<br>~~ee~~<br>~~Gs~~<br>~~G~~<br>~~=~~<br>~~a~~|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||Note : Follow JEDEC TO-252 .||||||||Note : Follow JEDEC TO-252 .||||||Note : Follow JEDEC TO-252 .|Note : Follow JEDEC TO-252 .||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

8 

## **SM6027NSU** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>Lar<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**|**C**<br>**d**<br>**D**|**D**<br>**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30 1.75|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**<br>**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

sinopower **®** YX 

**SM6027NSU** 

## **Taping Direction Information** 

**TO-252-3** 

USER DIRECTION OF FEED 

## **Classification Profile** 

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_www.sinopowersemi.com_ 

**®** 

## **SM6027NSU** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~——~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———=————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM6027NSU/sm6027nsu-single-mosfet-n-channel-60v-to-252-2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM6027NSU)
---

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