# SM6012NSU, Single MOSFET, N Channel, 60V, TO-252-2

![Product image](https://novapart.co/image/sinopower:SM6012NSU_N_CISS:1370/)

**URL**: https://novapart.co/products/SM6012NSU/sm6012nsu-single-mosfet-n-channel-60v-to-252-2
**SKU**: SM6012NSU
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 60 |
| Package | TO-252-2 |
| Vgs (±V) | 20 |
| Vth(V) Typ. | 2 |
| Id (A) Ta=25 | 9 |
| Id (A) Tc=25 | 43 |
| Rg (Ω) Typ. | 2.5 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6143 |
| Ciss (Pf) Typ. | 1370 |
| Coss (Pf) Typ. | 135 |
| Crss (Pf) Typ. | 60 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6143 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6143 |
| Ron(Mω Max) 10V Max. | 17.5 |
| Ron(Mω Max) 4.5V Max. | 21.5 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM6012NSU_N_CISS:1370/)

- **SM6012NSU ®** N-Channel Enhancement Mode MOSFET 

- ~~pO~~ **Features Pin Configuration •** 60V/43A, D RDS(ON) = 17.5mΩ (max.) @ VGS = 10V S RDS(ON )= 21.5mΩ (max.) @ VGS = 4.5V ~~.~~ G erni 

- **•** Reliable and Rugged **•** Lead Free and Green Devices Available Top View of TO-252-3 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

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## **Applications** 

- DC-DC Converter. 

- Motor Control. 

- Power Tools. 

- Load Switching. 

## N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM6012NS Package Code<br>    U : TO-252-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code     C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code<br>Assembly Material<br>    G : Halogen and Lead Free Device<br>SM6012NS  U : SM6012N XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

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**®** sinopower WN 

## **SM6012NSU** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~—————EE~~|||||
|VDSS<br>~~—————~~|Drain-Source Voltage<br>~~—————~~||60<br>~~EE~~|V<br>~~EE~~|
|VGSS<br>~~—————~~<br>~~a ee~~|Gate-Source Voltage<br>~~—————~~<br>~~ee~~||±20<br>~~EE~~<br>~~ee~~||
|TJ<br>~~—————~~<br>~~a ee~~<br>~~a~~<br>~~es~~|Maximum Junction Temperature<br>~~————— ~~<br>~~ee~~<br>~~a~~<br>~~ee~~||150<br> ~~EE~~<br>~~ee~~<br>~~a~~<br>~~ee~~|°C<br>~~EE~~<br>~~a~~|
|TSTG<br>~~a~~<br>~~es~~|Storage Temperature Range<br>~~a~~<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~a~~<br>~~ee~~||
|IS<br>~~es~~<br>~~a es~~|Diode Continuous Forward Current<br>~~ee~~<br>~~es~~|TC=25°C<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~eee~~|21<br>~~ee~~<br>~~es~~<br>~~eee~~|A<br>|
|ID<br>~~ee~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee eee~~<br>|43<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>||
|||TC=100°C<br>~~ee~~<br>~~eee~~<br>~~ee eee~~<br>|27<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>|TC=25°C<br>~~eee ~~<br>~~ee eee~~<br>|172<br> ~~eee~~<br>~~eee~~<br>||
|PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~**e**e~~|59.5<br>~~ee~~<br>~~eee~~|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~**e**e~~|23<br>~~ee~~<br>~~eee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~**e**e ~~<br>~~e~~||2.1<br> ~~eee~~|°C/W|
|ID<br>~~[ee~~<br>~~ef~~|Continuous Drain Current<br>~~[ee~~<br>~~ef~~|TA=25°C<br>~~[ee~~<br>~~ee eee~~|9<br>~~[ee~~<br>~~eee~~|A<br>~~[ee~~<br>~~eee~~<br>~~a~~|
|||TA=70°C<br>~~[ee~~<br>~~ee eee~~|7<br>~~[ee~~<br>~~eee~~||
|PD<br>~~ef~~<br>~~es~~|Maximum Power Dissipation<br>~~ef~~<br>|TA=25°C<br>~~ee eee~~<br>~~**e**e eee~~|2.5<br>~~eee~~<br>~~eee~~|W<br>~~eee~~<br>~~a~~|
|||TA=70°C<br>~~ee eee~~<br>~~**e**e eee~~|1.6<br>~~eee~~<br>~~eee~~||
|RθJA<br>c<br>~~es~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~**e**e eee~~<br>~~e~~<br>~~ee~~<br>~~ee~~||50<br>~~eee~~<br>~~ee~~|°C/W|
|IAS<br>b<br>~~es~~<br>~~a~~|Avalanche Current, Single pulse<br><br>~~ee~~|L=0.1mH<br>~~**e**e eee~~<br>~~ee~~|27<br>~~eee~~<br>~~ee~~|A|
|EAS<br>b<br>~~a~~<br>~~a~~|Avalanche Energy, Single pulse<br>~~ee~~|L=0.1mH<br>~~ee~~|36<br>~~ee~~|mJ|



Note a：Pulse width limited by max. junction temperature. 

Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area. 

2 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

**®** sinopower WN 

## **SM6012NSU** 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|~~a~~|~~es~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~a~~<br>~~es~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br><br>~~**e**e a~~||60<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~**e**e a~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~e~~<br>~~a~~|Gate Threshold Voltage<br>~~e~~<br>~~ee ee~~|VDS=VGS, IDS=250µA<br>~~**e**e a~~<br>~~e~~<br>~~ee~~||1|2|3|V|
|IGSS<br>~~a~~<br>~~EEE~~|Gate Leakage Current<br>~~ee ee~~<br>~~EEE~~|VGS=±20V, VDS=0V<br>~~ee~~<br>~~EEE~~||-<br>~~EEE~~|-<br>~~EEE~~|±100<br>~~EEE~~|nA<br>~~EEE~~|
|RDS(ON)<br>d <br>~~a~~<br>~~EEE~~|Drain-Source On-state Resistance<br>~~ee ee~~<br>~~EEE~~|VGS=10V, IDS=16A<br>~~ee~~<br>~~EEE~~<br>~~ee~~||-<br>~~EEE~~|14.5<br>~~EEE~~<br>~~ee~~|17.5<br>~~EEE~~<br>~~ee~~|mΩ<br>~~EEE~~<br>~~ee~~|
|||VGS=4.5V, IDS=14A<br>~~EEE~~<br>~~ee~~||-<br>~~EEE~~|16.5<br>~~EEE~~<br>~~ee~~|21.5<br>~~EEE~~<br>~~ee~~|mΩ<br>~~EEE~~<br>~~ee~~|
|**Diode Characteristics**<br>~~EEE~~<br>~~ee~~<br>~~ee~~<br>~~PR~~||||||||
|VSD<br>d<br>~~PR~~|Diode Forward Voltage<br>|ISD=16A, VGS=0V||-|0.8|1.3|V|
|trr<br>~~PR~~~~**a**~~|Reverse Recovery Time<br>~~**a**~~|ISD=16A, dlSD/dt=100A/µs<br>~~eee~~||-<br>~~eee~~|23<br>~~eee~~|-<br>~~eee~~|ns<br>~~eee~~|
|Qrr<br>~~**a**~~|Reverse Recovery Charge<br>~~**a**~~|||-<br>~~eee~~<br>~~Pot~~|25<br>~~eee~~<br>~~Pot~~|-<br>~~eee~~<br>~~Pot~~|nC<br>~~eee~~<br>~~Pot~~|
|**Dynamic Characteristics**<br>e<br>~~a~~<br>~~es~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~es~~|VGS=0V,VDS=0V,f=1MHz||-<br>~~Pf~~|2.5<br>~~Pf~~|-<br>~~Pf~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~es~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~**|**~~||-<br>~~Pf~~<br>~~|~~|1370<br>~~Pf~~<br>|1780<br>~~Pf~~<br>|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~Pf~~<br>~~|||~~<br>~~**||**~~|135<br>~~Pf~~<br>~~||~~|-<br>~~Pf~~<br>~~||~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~|||~~<br>~~**||**~~|60<br>~~||~~|-<br>~~||~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br><br>~~**|**~~<br>~~ee~~<br>~~**|**~~||-<br>~~||~~<br>~~**||**~~<br>~~**|**~~|14<br>~~||~~<br>~~**|**~~|26<br>~~||~~<br>~~**|**~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~**|** ~~~~**|**~~<br>~~**|**~~<br>~~||~~<br>~~ptf~~|8<br>~~**|**~~<br>~~||~~<br>~~ptf~~|15<br>~~**|**~~<br>~~||~~<br>~~ptf~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~**|**~~<br>~~ptf~~<br>~~**|**~~|38<br>~~**|**~~<br>~~ptf~~|69<br>~~**|**~~<br>~~ptf~~||
|tf<br>~~a~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~ptf~~<br>~~**|**~~|12<br>~~ptf~~|22<br>~~ptf~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~**|**~~<br>~~a~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~a~~|VDS=30V, VGS=4.5V,<br>IDS=16A<br>~~a~~<br>~~|~~||-<br>~~a~~<br>~~|~~<br>~~|~~|12<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~|nC<br>~~a~~|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=16A<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~|~~||-<br>~~|~~<br>~~|~~<br>~~|~~|26<br>~~|~~<br>|37<br>~~|~~<br>||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|tT~~<br>~~|~~<br>~~|~~|5<br>~~|~~<br>~~tT~~<br>~~|~~|-<br>~~|~~<br>~~tT~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~|5<br><br>~~|~~|-<br><br>~~|~~||



3 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

**®** 

## **SM6012NSU** 

## **Typical Operating Characteristics** 

## **Drain Current** 

**Power Dissipation** 

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70 50<br>60<br>40<br>50<br>30<br>40<br>30<br>20<br>20<br>10<br>10<br>0 TC=25C=25=25 o C 0 TC=25oC,VG=10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC)j - Junction Temperature (oC) - Junction Temperature (oC)oC)C) Tj - Junction Temperature (oC)<br>Safe Operation Area Thermal Transient Impedance<br>800 4<br>1 Duty = 0.5<br>0.2<br>100 10µs<br>0.1<br>0.1 0.05<br>0.02<br>10 co 100µs<br>0.01<br>0.01<br>1ms<br>10ms<br>1<br>DC<br>1E-3 Single Pulse<br>0.1 TC=25oC 1E-4 RθJC :2.1oC/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P  - Drain Current (A)<br>ID<br> - Drain Current (A)<br>ID<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


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70<br>60<br>50<br>40<br>30<br>20<br>10<br>TC=25C=25=25 o C<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC)j - Junction Temperature (oC) - Junction Temperature (oC)oC)C)<br> - Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


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## **SM6012NSU** 

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## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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80<br>70 VGS=4,5,6,7,8,9,10V<br>60<br>3.5V<br>50<br>40<br>30<br>20 3V<br>10<br>2.5V<br>0<br>0 1 2 3 4 5 6<br>VDS - Drain-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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27<br>24<br>21<br>V =4.5V<br>18 GS<br>15<br>V =10V<br>GS<br>12<br>9<br>6<br>0 10 20 30 40 50 60<br>ID - Drain Current (A)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

## **Gate Threshold Voltage** 

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40<br>I =16A<br>DS<br>35<br>30<br>25<br>20<br>15<br>10<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate-Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.6<br>I DS  =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (oC)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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## **SM6012NSU** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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2.00<br>V = 10V<br>GS<br> I = 16A<br>1.75 DS<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>RON@Tj=25 o C: 14.5mΩ<br>0.25 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (oC)<br>Capacitance<br>2000<br>Frequency=1MHz<br>1800<br>1600<br>1400 Ciss<br>1200<br>1000<br>800<br>600<br>400<br>200 Crss Coss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source-Drain Voltage (V)<br>Gate Charge<br>10<br>V =30V<br>DS<br>9  I =16A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20 24 28<br>QG - Gate Charge (nC)<br>- Source Current (A)<br>IS<br>- Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **SM6012NSU** 

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## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>y i<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** sinopower “A 

**SM6012NSU** 

## **Package Information** 

## **TO-252-3** 

E A b3 c2 E1 ~~tr im c~~ b e ~~Be~~ SEE VIEW A GAUGE PLANE SEATING PLANE L ~~Et eo}~~ VIEW A 

|**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**TO-252-3**<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>~~Se~~|**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**TO-252-3**<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>~~Se~~||**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>_|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|2.39<br>A<br>0.094<br>2.18<br>0.086|||||||||||||||||||||||
|0.13<br>A1<br>0.005<br>-<br>-|||||||||||||||||||||||
|4.95<br>5.46<br>0.46<br>0.61<br>5.33<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>b<br>0.50<br>0.89<br>2.29 BSC<br>4.57<br>6.35<br>6.73<br>6.22<br>0.090 BSC<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>0.245<br>E1<br>0.035<br>0.070<br>0.410<br>L3<br>H<br>L<br>e<br>9.40<br>0.90<br>0.46<br>0.89<br>1.78<br>10.41<br>0.370<br>0.035<br>0.018<br>0.040<br>L4<br>1.02<br>0.150<br>3.81<br>0.89<br>2.03<br>0.035<br>0.080<br>~~0~~<br>8°<br>0°<br>8°<br>0°<br>6.00<br>6.00<br>0.236<br>0.236<br>-<br>-<br>~~————— ~~<br>~~— ~~<br>~~———_——~~<br>~~Se~~||<br>|6.6<br> <br>|||<br>|UNIT: mm<br>6.8 MIN.<br>3 MIN.<br>1.5 MIN.<br>2.286<br>4.572<br> ~~Com~~<br> ~~a~~||||||||||||||||
|Note : Follow JEDEC TO-252 .|||||||||||||||||||||||



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

8 

**®** 

## **SM6012NSU** 

## **Carrier Tape & Reel Dimensions** 

**==> picture [316 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

sinopower **®** UX 

**SM6012NSU** 

## **Taping Direction Information** 

**TO-252-3** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

10 

**SM6012NSU** 

**®** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



|Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)||||
|---|---|---|---|
|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm3 **<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~_—S===~~||||
|Table 2. Pb-free Process – Classification Temperatures (Tc)<br>**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br><1.6 mm<br>260°C<br>260°C<br>1.6 mm – 2.5 mm<br>260°C<br>250°C<br>≥2.5 mm<br>250°C<br>245°C<br>**Reliability Test Program**<br>~~—~~|||**Volume mm3**<br>**>2000**<br>260°C<br>245°C<br>245°C|



## **Reliability Test Program** 

**Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM6012NSU/sm6012nsu-single-mosfet-n-channel-60v-to-252-2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM6012NSU)
---

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