# SM4403PSK, Single MOSFET, P Channel, -40V, SOP-8

![Product image](https://novapart.co/image/sinopower:SM4403PSK_P_CISS:1500/)

**URL**: https://novapart.co/products/SM4403PSK/sm4403psk-single-mosfet-p-channel-40v-sop-8
**SKU**: SM4403PSK
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -40 |
| Package | SOP-8 |
| Vgs (±V) | 25 |
| Vth(V) Typ. | -1.9 |
| Id (A) Ta=25 | -11 |
| Rg (Ω) Typ. | 2.3 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6333 |
| Ciss (Pf) Typ. | 1500 |
| Coss (Pf) Typ. | 235 |
| Crss (Pf) Typ. | 180 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6333 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6333 |
| Ron(Mω Max) 10V Max. | 18 |
| Ron(Mω Max) 4.5V Max. | 27 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM4403PSK_P_CISS:1500/)

sinopower **®** VA 

**SM4403PSK ®** 

P-Channel Enhancement Mode MOSFET ~~a~~ 

## **Features** 

- -40V/-11A, 

- RDS(ON)= 18mΩ (max.) @ VGS=-10V 

- RDS(ON)= 27mΩ (max.) @ VGS=-4.5V 

- 100% UIS + Rg Tested 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

## **Applications** 

- Power Management in LCD TV Inverter. 

## **Pin Description** 

**==> picture [73 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>8 D7 D6 D<br>5<br>1<br>S 2<br>S 3<br>S 4<br>G<br>Top View of  SOP-8<br>( 5,6,7,8 )<br>D D D D<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>


Top View of  SOP-8 

P-Channel MOSFET 

## **Ordering and Marking Information** 

SM4403PS Package Code K : SOP-8 Operating Junction Temperature Range Assembly Material C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel Package Code Assembly Material G : Halogen and Lead Free Device 4403 SM4403PS  K : XXXXX - Lot Code XXXXX E ~~e |~~ Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor Inc. Rev. A.4 - May, 2023 

**®** sinopower WN 

## **SM4403PSK** 

## **Absolute Maximum Ratings** 

**==> picture [469 x 310] intentionally omitted <==**

**----- Start of picture text -----**<br>
a Symbol Parameter  Rating Unit<br>VDSS Drain-Source Voltage  -40<br>V<br>VGSS Gate-Source Voltage  ±25<br>$<a ee |<br>ID a Continuous Drain Current (VGS=-10V)  TA=25°C  -11<br>ee TA=70°C  -9<br>a IDM a 300µs Pulsed Drain Current (VGS=-10V) ee ee -44  A<br>IS a Diode Continuous Forward Current  -3<br>Cea IAS b Avalanche Current, Single pulse (L=0.1mH)  -33<br>b<br>a EAS  Avalanche Energy, Single pulse (L=0.1mH) 54  mJ<br>TJ Maximum Junction Temperature  150<br>°C<br>ooa TSTG Storage Temperature Range  -55 to 150<br>PD a Maximum Power Dissipation   TA=25°C  3.1  W<br>ee TA=70°C  2.0<br>t ≤ 10s  40<br>pp RθJA a Thermal Resistance-Junction to Ambient  ee Steady State   ee 75  °C/W<br>a RθJLc Thermal Resistance-Junction to Lead  ee Steady State   eee 24<br>Note a: Surface Mounted on 1in [2 ] pad area, t ≤ 10sec.<br>Note b: UIS tested and pulse width limited by maximum junction temperature 150 [o] C (initial temperature Tj=25 [o] C).<br>Note c: The power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal<br>resistance (RθJC) when additional heat sink is used.<br>**----- End of picture text -----**<br>


**Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~a~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=-250µA<br>||-40<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=-32V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~Pp~~||-<br>~~ee~~|-<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~Pp~~|-<br>~~ee~~<br>~~Pp~~|-<br>~~ee~~<br>~~Pp~~|-30<br>~~ee~~<br>~~Pp~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=-250µA||-1.4|-1.9|-2.4|V|
|IGSS<br>~~a~~|Gate Leakage Current<br>|VGS=±25V, VDS=0V<br>||-<br>|-<br>|±100<br>|nA<br>|
|RDS(ON)<br>a <br>~~TE~~|Drain-Source On-state Resistance<br>~~TE~~<br>~~ee~~|VGS=-10V, IDS=-11A<br>~~TE~~||-<br>~~TE~~<br>~~ee~~|14<br>~~TE~~<br>~~ee~~|18<br>~~TE~~<br>~~ee~~|mΩ<br>~~TE~~|
|||VGS=-4.5V, IDS=-7A<br>~~TE~~<br>~~ee~~||-<br>~~TE~~<br>~~ee~~<br>~~ee~~|20<br>~~TE~~<br>~~ee~~<br>~~ee~~|27<br>~~TE~~<br>~~ee~~<br>~~ee~~||



_www.sinopowersemi.com_ 

## **SM4403PSK** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|**Diode Characteristics**<br>~~a~~<br>~~eeee~~<br>~~ee~~|||||||
|VSD<br>a<br>~~ee~~<br>~~a~~<br>~~rs~~|Diode Forward Voltage<br>~~ee~~<br>|ISD=-1A, VGS=0V<br>~~ee~~<br><br>~~A~~|-<br>~~ee~~<br><br>~~ees~~|-0.75<br>~~ee~~<br><br>~~ees~~|-1<br>~~ee~~<br>|V<br>~~ee~~<br>|
|trr<br>~~es~~<br>~~rs~~|Reverse RecoveryTime<br>~~es~~<br>~~ee~~|ISD=-11A, dlSD/dt=100A/µs<br>~~es~~<br>~~A~~|-<br>~~es~~<br>~~ees~~<br>~~re~~|24<br>~~es~~<br>~~ees~~<br>~~re~~|-<br>~~es~~<br>~~re~~|ns<br>~~es~~<br>~~re~~|
|Qrr<br>~~es~~<br>~~rs~~|Reverse RecoveryCharge<br>~~es~~<br>~~ee~~||-<br>~~es~~<br>~~ees~~<br>~~re~~|18<br>~~es~~<br>~~ees~~<br>~~re~~|-<br>~~es~~<br>~~re~~|nC<br>~~es~~<br>~~re~~|
|**Dynamic Characteristics**b<br>~~A~~<br>~~ees~~<br>~~rs~~<br>~~ee~~<br>~~re~~<br>~~Fa Ds~~|||||||
|RG<br>~~Fa Ds~~<br>~~es~~|Gate Resistance<br>~~Ds~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~Ds~~|-<br>~~Ds~~<br>~~pT~~|2.3<br>~~Ds~~<br>~~pT~~|-<br>~~Ds~~<br>~~pT~~|Ω<br>~~Ds~~|
|Ciss<br>~~Fa Ds~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~Ds~~<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-20V,<br>Frequency=1.0MHz<br>~~Ds~~<br>~~a~~|-<br>~~Ds~~<br>~~pT~~<br>~~pT~~|1500<br>~~Ds~~<br>~~pT~~<br>~~pT~~|-<br>~~Ds~~<br>~~pT~~<br>~~pT~~|pF<br>~~Ds~~<br>~~|~~|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~pT~~<br>~~pT~~|235<br>~~pT~~<br>~~pT~~|-<br>~~pT~~<br>~~pT~~||
|Crss<br>~~es~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~a~~||-<br>~~pT~~<br>~~a~~<br>~~|~~|180<br>~~pT~~<br>~~a~~<br>~~|~~|-<br>~~pT~~<br>~~a~~<br>~~|~~||
|td(ON)<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~a~~<br>~~ee~~|VDD=-20V, RL=20Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|14<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~|~~|
|tr<br>~~ee~~|Turn-on Rise Time<br>~~ee~~||-<br>~~a~~<br>~~oT~~|12<br>~~a~~<br>~~oT~~|-<br>~~a~~<br>~~oT~~||
|td(OFF)<br>~~ee~~<br>~~a~~|Turn-off Delay Time<br>~~ee~~<br>~~a~~||-<br>~~a~~<br>~~a~~<br>~~|~~|41<br>~~a~~<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~|~~||
|tf<br>~~a~~|Turn-off Fall Time<br>~~a~~||-<br>~~a~~<br>~~pT~~|22<br>~~a~~<br>~~pT~~|-<br>~~a~~<br>~~pT~~||
|**Gate Charge Characteristics**<br>b<br>~~ee~~<br>~~ee~~|||||||
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge|VDS=-20V, VGS=-10V,<br>IDS=-11A|-<br>~~ee~~<br>~~ee~~|32<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|nC|
|Qgs<br>~~ee~~<br>~~es~~<br>~~es~~|Gate-Source Charge||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.2<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Qgd<br>~~es~~<br>~~es~~|Gate-Drain Charge||-<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~||



Note a: Pulse test; pulse width≤300µs, duty cycle≤2%. Note b: Guaranteed by design, not subject to production testing. 

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## **SM4403PSK** 

**==> picture [4 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

**==> picture [195 x 509] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>TA=25 o C<br>0.0<br>0 20 40 60 80 100 120 140 160<br>TA - Ambient Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>300µs<br>1ms<br>1 10ms<br>100ms<br>1s<br>0.1<br>DC<br>0.01 TA=25oC<br>0.01 0.1 1 10 100 300<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>10<br>8<br>6<br>4<br>2<br>TA=25 o C,VG=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br>TA - Ambient Temperature (°C)<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Thermal Transient Impedance** 

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**----- Start of picture text -----**<br>
2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2  pad<br>1E-3 RθJA : 40 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 30<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**®** 

## **SM4403PSK** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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**----- Start of picture text -----**<br>
50<br>VGS=-5,-6,-7,-8,-9,-10V<br>-4V<br>40<br>30<br>-3.5V<br>20<br>10<br>-3V<br>-2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS - Drain-Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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**----- Start of picture text -----**<br>
70<br>I =-11A<br>DS<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
32<br>28<br>24<br>V =-4.5V<br>GS<br>20<br>16<br>V =-10V<br>GS<br>12<br>8<br>4<br>0 8 16 24 32 40<br>-ID - Drain Current (A)<br>Gate Threshold Voltage<br>[a]<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.6<br>I DS = -250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM4403PSK** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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**----- Start of picture text -----**<br>
2.0<br>V GS  = -10V<br>1.8  I  = -11A<br>DS<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 = RON@Tj=25 o C: 14mΩ<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>2400<br>Frequency=1MHz<br>2100<br>1800<br>1500 Ciss<br>1200<br>900<br>600<br>300 Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
40<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


## **Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>V = -20V<br>9 DS<br> I = -11A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 8 16 24 32<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower MA 

## **SM4403PSK** 

## **Avalanche Test Circuit and Waveforms** 

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**----- Start of picture text -----**<br>
VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
tAV<br>EAS<br>_-- NW<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor Inc. Rev. A.4 - May, 2023 

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**®** sinopower WN 

## **SM4403PSK** 

## **Disclaimer** 

Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to develop high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopower Semiconductor Inc. Rev. A.4 - May, 2023 

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**®** sinopower VN 

**SM4403PSK** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor Inc. Rev. A.4 - May, 2023 

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_www.sinopowersemi.com_ 

**®** 

## **SM4403PSK** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=a~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm3 Volume mm3 Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ~~————=——~~ ≥2.5 mm 250 °C 245 °C 245 °C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——=——=~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 300096, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5635080 

Copyright  Sinopower Semiconductor Inc. Rev. A.4 - May, 2023 

_www.sinopowersemi.com_ 

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## Links

- [View this product on Novapart](https://novapart.co/products/SM4403PSK/sm4403psk-single-mosfet-p-channel-40v-sop-8)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM4403PSK)
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