# SM4310PSK, Single MOSFET, P Channel, -30V, SOP-8

![Product image](https://novapart.co/image/sinopower:SM4310PSK_P_CISS:840/)

**URL**: https://novapart.co/products/SM4310PSK/sm4310psk-single-mosfet-p-channel-30v-sop-8
**SKU**: SM4310PSK
**Reference SKUs**: AO4419
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -30 |
| Package | SOP-8 |
| Vgs (±V) | 20 |
| Vth(V) Typ. | -1.8 |
| Id (A) Ta=25 | -9.3 |
| Rg (Ω) Typ. | 7 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6327 |
| Ciss (Pf) Typ. | 840 |
| Coss (Pf) Typ. | 150 |
| Crss (Pf) Typ. | 110 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6327 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6327 |
| Ron(Mω Max) 10V Max. | 24 |
| Ron(Mω Max) 4.5V Max. | 38 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM4310PSK_P_CISS:840/)

**®** sinopower MA 

## **SM4310PSK** 

P-Channel Enhancement Mode MOSFET 

## **Features** 

- -30V/-9.3A, 

   - RDS(ON) = 24mΩ(max.) @ VGS =-10V RDS(ON) = 38mΩ(max.) @ VGS =-4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

## **Pin Description** 

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D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>Top View of  SOP-8<br>( 5,6,7,8 )<br>D D D D<br>(4)<br>G<br>:<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>


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Top View of  SOP-8<br>**----- End of picture text -----**<br>


P-Channel MOSFET 

## **Ordering and Marking Information** 

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**----- Start of picture text -----**<br>
SM4310PS Package Code<br>     K : SOP-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>     TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>     G : Halogen and Lead Free Device<br>OO-00 0 oo<br>4310<br>SM4310PS  K : XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

1 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**®** sinopower WN 

## **SM4310PSK** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|VDSS<br>~~a ee~~<br>~~**a**~~|Drain-Source Voltage<br>~~ee~~<br>~~**a**~~||-30<br>~~ee~~<br>~~**a**~~|V<br>~~ee~~<br>~~**a**~~|
|VGSS<br>~~**a**~~|Gate-Source Voltage<br>~~**a**~~||±20<br>~~**a**~~||
|ID<br>a<br>~~ee~~|Continuous Drain Current (VGS=-10V)<br>|TA=25°C<br>|-9.3<br>|A<br>~~-~~<br>~~a~~<br>~~a~~|
|||TA=70°C<br>|-7.5<br>||
|IDM<br>a<br>~~ee~~|300µs Pulsed Drain Current(VGS=-10V)<br>||-37<br>||
|IS<br>a<br>~~eea~~|Diode Continuous Forward Current<br>~~a~~||-2<br>~~a~~||
|IAS<br>b<br>~~ee~~<br>~~a~~|Avalanche Current, Singlepulse(L=0.3mH)<br><br>~~a~~||-16<br><br>~~a~~||
|EAS<br>b<br>~~ee~~<br>~~a~~<br>~~a~~|Avalanche Energy, Singlepulse(L=0.3mH)<br><br>~~a~~<br>~~a~~||38<br><br>~~a~~<br>~~a~~|mJ<br>~~-~~<br><br>~~a~~<br>~~a~~|
|TJ<br>~~**a**~~|Maximum Junction Temperature<br>~~**a**~~||150<br>~~**a**~~|°C<br>~~**a**~~|
|TSTG<br>~~**a**~~<br>~~pf~~|Storage Temperature Range<br>~~**a**~~<br>~~es~~<br>~~pf~~||-55 to 150<br>~~**a**~~<br>~~eee~~||
|PD<br>a<br>~~**a**~~<br>~~ee~~<br>~~pf~~|Maximum Power Dissipation<br>~~**a**~~<br>~~ee~~<br>~~pf~~|TA=25°C<br>~~**a**~~<br>~~ee~~<br>~~es~~|3.1<br>~~**a**~~<br>~~ee~~<br>~~eee~~|W<br>~~**a**~~<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~es~~|2<br>~~ee~~<br>~~eee~~||
|RθJA<br>a<br>~~ee~~<br>~~pf~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>~~pf~~|t≤10s<br>~~ee~~<br>~~es~~|40<br>~~ee~~<br>~~eee~~|°C/W<br>~~ee~~|
|||SteadyState<br>~~es~~|75<br>~~eee~~||
|RθJL<br>~~pf~~<br>~~a~~|Thermal Resistance-Junction to Lead<br>~~pf~~<br>~~ee~~|SteadyState<br>~~es~~<br>~~ee~~|24<br>~~eee~~<br>~~ee~~||



2 Note a：Surface Mounted on 1in pad area, t ≤ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|||~~ee~~|~~ee~~|||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~re~~|**Parameter**<br>~~re~~|**Test Conditions**<br>~~re~~<br>~~ee~~||**SM4310PSK**<br>~~re~~|||**Unit**<br>~~re~~|
|||||**Min.**<br>~~re~~|**Typ.**<br>~~re~~|**Max.**<br>~~re~~||
|**Static Characteristics**<br>~~ee~~||||||||
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V,IDS=-250µA<br>~~ee~~<br>~~|~~<br>~~eeeee~~||-30<br>~~|of~~<br>~~eee~~|-<br>~~of~~<br>~~eee~~|-<br><br>~~eee~~|V<br>~~eee~~|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~|~~<br>~~ee~~<br>~~eeeee~~||-<br>~~|of|~~<br>~~ee~~<br>~~eee~~|-<br>~~of|~~<br>~~ee~~<br>~~eee~~|-1<br>~~|~~<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|
||||TJ=85°C<br>~~|~~<br>~~ee~~<br>~~eee~~|-<br>~~| of~~<br>~~ee~~<br>~~eee~~|-<br>~~of~~<br>~~ee~~<br>~~eee~~|-30<br><br>~~ee~~<br>~~eee~~||
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, IDS=-250µA<br>~~ee eee~~<br>~~ee~~||-1.3<br>~~eee~~<br>~~ee~~|-1.8<br>~~eee~~<br>~~ee~~|-2.3<br>~~eee~~<br>~~ee~~|V<br>~~eee~~<br>~~ee~~|
|IGSS<br>~~a QO~~<br>~~ees~~|Gate Leakage Current<br>~~QO~~<br>~~ees~~|VGS=±20V, VDS=0V<br>~~QO~~<br>~~ees~~||-<br>~~QO~~<br>~~ee~~|-<br>~~QO~~<br>~~ee~~|±100<br>~~QO~~<br>~~ee~~|nA<br>~~QO~~<br>~~ee~~|
|RDS(ON)<br>c<br>~~ees~~|Drain-Source On-state Resistance<br>~~ees~~|VGS=-10V, IDS=-9.3A<br>~~ees~~||-<br>~~ee~~|20<br>~~ee~~|24<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=-4.5V, IDS=-4A<br>~~ees~~||-<br>~~ee~~|30<br>~~ee~~|38<br>~~ee~~||
|**Diode Characteristics**<br>~~eesee~~||||||||
|VSD<br>c<br>~~a es~~<br>~~SS~~|Diode Forward Voltage<br>~~es~~<br>~~SS~~|ISD=-2A, VGS=0V<br>~~es~~||-<br>~~es~~|-0.75<br>~~es~~|-1<br>~~es~~|V<br>~~es~~|
|trr<br>d<br>~~SS~~<br>~~a~~|Reverse Recovery Time<br>~~SS~~<br>~~ee~~|ISD=-9.3A,<br>diSD/dt=100A/µs<br>~~|~~||-<br>~~|~~<br>~~tT~~|19<br>~~tT~~<br>~~|~~|-|ns|
|Qrr<br>d<br>~~SS~~<br>~~a~~|Reverse Recovery Charge<br>~~SS~~<br>~~ee~~|||-<br>~~|~~<br>~~tT~~|9<br>~~tT~~<br>~~|~~|-|nC|



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

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**®** sinopower MA 

## **SM4310PSK** 

## **Electrical Characteristics (Cont.)** (TA = 25°C Unless Otherwise Noted) 

|||~~ee~~|~~ee~~|~~ee~~|~~ee~~||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~ee~~<br>~~|~~|**SM4310PSK**<br>~~ee~~<br>~~ee~~|||**Unit**<br>~~ee~~|
||||**Min.**<br>~~ee~~<br>~~ee~~<br>~~|~~|**Typ.**<br>~~ee~~<br>~~ee~~<br>~~|~~|**Max.**<br>~~ee~~<br>~~|~~||
|**Dynamic Characteristics**<br>d<br>~~ee ee~~|||||||
|Rg<br>~~a~~<br>~~ee~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz<br>~~**—**~~|-<br>~~**—**|~~|7<br>~~|~~|-|Ω|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~**—**~~<br>~~**|**~~<br>~~ee~~<br>~~—~~|-<br>~~**—**|~~|840<br>~~|~~|-|pF<br>|
|Coss<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~||-<br>~~**—**|~~<br>~~**|**~~|150<br>~~|~~<br>~~**|**~~|-<br>~~**|**~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~**a**~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~**—** |~~<br>~~**|**~~<br>~~—|)~~|110<br>~~|~~<br>~~**|**~~<br>~~|)~~|-<br>~~**|**~~<br>||
|td(ON)<br>~~es~~<br>~~**a**~~|Turn-on DelayTime<br>~~ee~~|VDD=-15V, RL=15Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~**|**~~<br>~~ee~~<br>~~—|~~<br>~~a~~<br>~~|~~<br>~~ee~~<br>~~|)~~|-<br>~~**|**~~<br>~~—|)~~|7.5<br>~~**|**~~<br>~~|)~~|-<br>~~**|**~~<br>|ns<br>~~|~~|
|tr<br>~~**a**~~|Turn-on Rise Time<br>~~ee~~||-<br>~~— |)|~~|8<br>~~|)|~~|-<br>~~|~~||
|td(OFF)<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~a~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|)~~|37<br>~~a~~<br>~~|~~<br>~~|)~~|-<br>~~a~~<br>~~|~~<br>~~|)~~||
|tf<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~|)~~|16<br>~~|)~~|-<br>~~|)~~||
|**Gate Charge Characteristics**<br>d<br>~~a~~<br>~~ee~~<br>~~|)~~<br>~~a~~<br>~~|~~|||||||
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge|VDS=-15V, VGS=-10V,<br>IDS=-9.3A<br>~~|TT~~<br>~~|oT~~<br>~~||]~~|-<br>~~|TT~~<br>~~|~~|18<br>~~TT~~<br>|-<br>~~TT~~<br>|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~|~~<br>~~|oT~~<br>~~|~~|3<br><br>~~oT~~<br>|-<br><br>~~oT~~<br>||
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain Charge||-<br>~~|~~<br>~~||]~~|4<br><br>~~|]~~|-<br><br>~~|]~~||



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## **SM4310PSK** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

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Power Dissipation Drain Current<br>4 10<br>8<br>3<br>6<br>2<br>4<br>1<br>2<br>0 i TA=25oC 0 TA=25oC,VG=-10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 2<br>1 Duty = 0.5<br>0.2<br>10 0.1<br>300µs 0.05<br>0.1<br>1ms 0.02<br>1<br>10ms 0.01<br>100ms<br>1s 0.01<br>Single Pulse<br>0.1 DC<br>Mounted on 1in 2  pad<br>0.01 a TA=25oC 1E-3 RθJA : 40 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 60<br>-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P  - Drain Current (A)<br>D<br>-I<br>- Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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**®** 

## **SM4310PSK** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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35<br>V GS =-5,-6,-7,-8,-9,-10V<br>30<br>-4V<br>25<br>20<br>-3.5V<br>15<br>10<br>-3V<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS - Drain-Source Voltage (V)<br>Gate-Source On Resistance<br>100<br>I =-9.3A<br>DS<br>80<br>60<br>40<br>20<br>0<br>2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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60<br>50<br>40<br>V =-4.5V<br>GS<br>30<br>V =-10V<br>GS<br>20<br>10<br>0<br>0 7 14 21 28 35<br>-ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS =-250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0 =<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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**SM4310PSK** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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**----- Start of picture text -----**<br>
1.8<br>V GS = -10V<br>1.6  IDS = -9.3A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>R ON @T j =25oC: 20m Ω<br>0.2 a<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>1400<br>Frequency=1MHz<br>1200<br>1000<br>Ciss<br>800<br>600<br>400<br>200 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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40<br>10<br>T =150oC<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>-VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


## **Gate Charge** 

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10<br>V DS =-15V<br>9<br> I DS =-9.3A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 3 6 9 12 15 18<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM4310PSK** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


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sinopower WA. **®** 

**SM4310PSK** 

## **Package Information** 

## **SOP-8** 

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**----- Start of picture text -----**<br>
-T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>ik - f7<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>mmm.<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BOL MIN. MAX. MIN. MAX.<br>A 1.75 0.069<br>=e<br>A1 0.10 0.25 0.004 0.010<br>2.2<br>A2 1.25 0.049<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>D 4.80 5.00 0.189 0.197 5.74<br>=SSSne<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>L 0.40 1.27 0.016 0.050 0.8<br>pa 0 0° 8 [°] 0° 8 [°] 0.635<br>UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br>          2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br>              Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br>          3. Dimension “E” does not include inter-lead flash or protrusions.<br>              Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


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**®** 

## **SM4310PSK** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>ba SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**<br>**D**|**D**<br>**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|
|**SOP-8**|330.0±<br>2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30 1.75|1.75±0.10|5.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**<br>**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.40±0.20|5.20±0.20|2.10±0.20|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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sinopower **®** YX 

**SM4310PSK** 

## **Taping Direction Information** 

## **SOP-8** 

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USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>


## **Classification Profile** 

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_www.sinopowersemi.com_ 

**®** 

## **SM4310PSK** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm3 **<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=sSS===~~||
|---|---|
|Table 2. Pb-free Process – Classification Temperatures (Tc)||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6 mm<br>260°C<br>260°C<br>260°C<br>1.6 mm – 2.5 mm<br>260°C<br>250°C<br>245°C<br>≥2.5 mm<br>250°C<br>245°C<br>245°C<br>~~——————=—~~||
|**Reliability Test Program**||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000 Hrs,100% of VGS max@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~———~~||
|**Customer Service**||



## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM4310PSK/sm4310psk-single-mosfet-p-channel-30v-sop-8)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM4310PSK)
---

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