# SM2617PSC, Single MOSFET, P Channel, -20V, SOT-23-6

![Product image](https://novapart.co/image/sinopower:SM2617PSC_P_CISS:357/)

**URL**: https://novapart.co/products/SM2617PSC/sm2617psc-single-mosfet-p-channel-20v-sot-23-6
**SKU**: SM2617PSC
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -20 |
| Package | SOT-23-6 |
| 1.8V Max. | 193 |
| 2.5V Max. | 110 |
| 2.7V Max. | 104 |
| Vgs (±V) | 12 |
| Vth(V) Typ. | -0.7 |
| Id (A) Ta=25 | -4.4 |
| Rg (Ω) Typ. | 4 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6502 |
| Ciss (Pf) Typ. | 357 |
| Coss (Pf) Typ. | 72 |
| Crss (Pf) Typ. | 61 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6502 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6502 |
| Ron(Mω Max) 4.5V Max. | 71 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM2617PSC_P_CISS:357/)

**®** sinopower N 

**SM2617PSC ®** 

P-Channel Enhancement Mode MOSFET ~~pO~~ 

## **Features** 

## **Pin Description** 

- -20V/-4.4A, 

- RDS(ON)= 71m Ω (Max.) @ VGS=-4.5V 

- RDS(ON)= 104m Ω (Max.) @ VGS=-2.7V 

- RDS(ON)= 110m Ω (Max.) @ VGS=-2.5V RDS(ON)= 193m Ω (Max.) @ VGS=-1.8V 

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S<br>D<br>D G<br>D<br>D<br>Top View of SOT-23-6<br>**----- End of picture text -----**<br>


- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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(1,2,5,6)<br>D D D D<br>(3)G<br>~ ,<br>(4)S<br>**----- End of picture text -----**<br>


P-Channel MOSFET 

## **Ordering and Marking I nform ation** 

SM2617PS Package Code C : SOT-23-6 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device ~~se~~ | SM2617PS  C : D17XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

Copyright  Sinopow er Sem iconductor, Inc. 1 Rev. A.3 - August, 2014 

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**SM2617PSC** 

**Absolute Maxim um  Ratings** (TA = 25 ° C unless otherwise noted) 

**Symbol Parameter Rating Unit** ~~eeee~~ VDSS Drain-Source Voltage -20 V ~~**a**~~ VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current TA=25°C -4.4 TA=70°C -3.5 ~~LT~~ IDM* 300 µ s Pulsed Drain Current ~~ee~~ TA=25°C ~~eee~~ -17.7 A TA=70°C -14.2 ~~ooee~~ IS* Diode Continuous Forward Current -1 ~~a~~ TJ Maximum Junction Temperature 150 °C ~~eea~~ TPSTGD* Storage Temperature Range Maximum Power Dissipation TA=25°C ~~oe~~ -55 to 150 2.1 ~~ae~~ W TA=70°C 1.3 ~~le~~ t ≤ 10s 60 R θ JA* Thermal Resistance-Junction to Ambient ~~ee[ee] eee~~ °C/W ~~ep~~ Steady state 100 2 ~~ee ee~~ Note: *Surface Mounted on 1in pad area, t ≤ 10sec. **Electrical Characteristics** (TA = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>~~a~~<br>~~PR~~|Drain-Source Breakdown Voltage<br><br>|VGS=0V, IDS=-250µA<br><br>~~ee a~~||-20<br><br>~~a~~|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>|VDS=-16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee a~~||-<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-30<br>~~ee~~||
|VGS(th)<br>~~PR~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=-250µA<br>~~ee a~~||-0.5<br>~~a~~|-0.7|-1|V|
|IGSS<br>~~PRa a~~|Gate Leakage Current<br>~~a~~|VGS=±12V, VDS=0V<br>~~ee a ~~||-<br> ~~a~~<br>~~ee~~|-<br>~~ee~~|±100<br>~~ee~~|nA|
|RDS(ON)<br>a <br>~~PR~~|Drain-Source On-State Resistance|VGS=-4.5V, IDS=-4.4A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|57<br>~~ee~~<br>~~ee~~<br>~~ee~~|71<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=-2.7V, IDS=-3.7A<br>~~ee~~||~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|77<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|104<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=-2.5V, IDS=-3.5A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|82<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|110<br>~~ee~~<br>~~ee~~||
|||VGS=-1.8V, IDS=-1A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|130<br> ~~ee~~<br>~~ee~~<br>~~ee~~|193<br>~~ee~~||
|VSD<br>a<br>~~PR~~<br>~~Ce~~|Diode Forward Voltage|ISD=-1A, VGS=0V||-<br>~~ee~~|-0.8<br>~~ee~~|-1|V|
|**Gate Charge Characteristics**<br>b<br>~~ee ee~~<br>~~PR~~<br>~~Cea~~<br>~~|~~||||||||
|Qg<br>~~Cea~~<br>~~rr~~|Total Gate Charge|VDS=-10V, VGS=-4.5V,<br>IDS=-4.4<br>~~|~~||-<br>~~||~~|5.2<br>~~|~~|-<br>~~|~~|nC|
|Qgs<br>~~a~~<br>~~rr~~|Gate-Source Charge|||-<br>~~||~~<br>~~P|~~|0.7<br>~~|~~<br>~~P|~~|-<br>~~|~~<br>~~P|~~||
|Qgd<br>~~rr~~<br>~~a~~|Gate-Drain Charge|||-<br>~~|~~<br>~~pT~~|1.8<br>~~|~~<br>~~pT~~|-<br>~~|~~<br>~~pT~~||



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**SM2617PSC** 

**Electrical Characteristics ( Cont.)** (TA = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>**b**<br>~~eeee ee~~<br>~~|~~<br>~~Pe~~|||||||
|RG<br>~~|~~<br>~~Pe~~<br>~~es~~|Gate Resistance<br>~~|~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~|~~<br>~~ee~~<br>~~—~~|-<br>~~|~~<br>~~—~~<br>~~|~~|4<br>~~|~~<br>~~|~~|-<br>~~|~~|Ω<br>~~|~~|
|Ciss<br>~~Pe~~<br>~~es~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-10V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~—~~<br>~~ff~~<br>~~ff~~<br>~~ee~~<br>~~ff~~|-<br>~~—~~<br>~~|~~<br>~~ff~~|357<br>~~|~~<br>~~ff~~|-<br>~~ff~~|pF|
|Coss<br>~~es~~<br>~~a~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~ff~~<br>~~ff~~|72<br>~~|~~<br>~~ff~~<br>~~ff~~|-<br>~~ff~~<br>~~ff~~||
|Crss<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ff~~<br>~~ff~~<br>~~ff~~|61<br>~~ff~~<br>~~ff~~<br>~~ff~~|-<br>~~ff~~<br>~~ff~~<br>~~ff~~||
|td(ON)<br>~~es ~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br> ~~ee~~<br>~~ee~~<br>~~ee~~|VDD=-10V, RL=10Ω,<br>IDS=-1A, VGEN=-4.5V,<br>RG=6Ω<br>~~ff~~<br>~~ee~~<br>~~ff~~<br>~~ee~~<br>~~—~~<br>~~—~~<br>~~—ff~~|-<br>~~ff~~<br>~~ff~~<br>~~—~~<br>~~|~~|5.6<br>~~ff~~<br>~~ff~~<br>~~|~~|-<br>~~ff~~<br>~~ff~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~||-<br>~~ff~~<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|13.2<br>~~ff~~<br>~~|~~<br>~~|~~|-<br>~~ff~~||
|td(OFF)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~<br>~~—~~|21<br>~~|~~<br>~~|~~<br>|-<br>||
|tf<br>~~a~~<br>~~a~~<br>~~SS~~|Turn-off Fall Time<br>~~SS~~||-<br>~~—~~<br>~~|~~<br>~~—ff~~|4.5<br>~~|~~<br>~~ff~~|-<br>~~ff~~||
|trr<br>~~a~~<br>~~SS~~<br>~~a~~|Reverse RecoveryTime<br>~~SS~~|ISD=-4.4A, dlSD/dt =100A/µs<br>~~—ff~~<br>~~ee~~<br>~~ee~~|-<br>~~—ff~~<br>~~ee~~|12<br>~~ff~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~||
|Qrr<br>~~SS~~<br>~~a~~|Reverse RecoveryCharge<br>~~SS~~||-<br>~~ff~~<br>~~ee~~<br>~~ee~~|6.6<br>~~ff~~<br>~~ee~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~|



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## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>TA=25oC<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>50<br>10<br>300 µ s<br>1 1ms<br>10ms<br>100ms<br>1s<br>0.1 DC<br>T A =25 o C<br>0.01 is<br>0.01 0.1 1 10 100<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=-4.5V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Thermal Transient Impedance<br>2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>Single Pulse<br>Mounted on 1in 2  pad<br>R θ JA : 60 oC/W<br>0.01<br>1E-4 1E-3 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (sec)<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>18 240<br>V GS =-3,-4,-5, -6,<br>16         -7,-8,-9,-10V 210<br>V =-1.8V<br>GS<br>14<br>-2.5V 180<br>12 VGS=-2.5V<br>150<br>10<br>120<br>V =-2.7V<br>8 GS<br>-2V<br>90<br>6<br>V =-4.5V<br>60 GS<br>4<br>2 -1.5V 30<br>0 Es 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18<br>-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>140 1.6<br>I DS =-4.4A I DS  = -250 µ A<br>1.4<br>120<br>1.2<br>100<br>1.0<br>80<br>0.8<br>60<br>0.6<br>40<br>0.4<br>20 0.2 _<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>-VGS - Gate - Source Voltage (V)  Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A)<br>D   - On - Resistance (m<br>-I DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V  = -4.5V<br>GS<br> I  = -4.4A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>RON@Tj=25 o C: 57m Ω<br>0.4 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>700<br>Frequency=1MHz<br>600<br>500<br>400<br>Ciss<br>300<br>200<br>100 Crss Coss<br>0<br>0 4 8 12 16 20<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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20<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>-VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = -10V<br>9 DS<br> I  = -4.4A<br>D<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0 i:<br>0 2 4 6 8 10 12<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>_-- NW<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


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## **Package I nform at ion** 

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SOT-23-6<br>D<br>e<br>SEE<br>VIEW A<br>mail a<br>b c<br>e1<br>i ot<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOT-23-6 INCHES RECOMMENDED LAND PATTERN 0.63<br>BOL MIN. MAX. MIN. MAX.<br>A - 1.25 - 0.049<br>A1 0.00 0.05 0.000 0.002<br>A2 0.90 1.20 0.035 0.047<br>b 0.30 0.50 0.012 0.020<br>c 0.08 0.22 0.003 0.009 2.4<br>D 2.70 3.10 0.106 0.122<br>E 2.60 3.00 0.102 0.118<br>E1 1.40 1.80 0.055 0.071 0.8<br>e 0.95 BSC 0.037 BSC<br>e1 1.90 BSC 0.075 BSC<br>L 0.30 0.60 0.012 0.024<br>0.95<br>0 0 ° 8 ° 0 ° 8 ° UNIT: mm<br>Note : 1. Follow JEDEC TO-178 AB.<br>0<br>E1 E<br>A2 A<br>0.25<br>A1<br>**----- End of picture text -----**<br>


2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 

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**®** 

## **SM2617PSC** 

## **Carrier Tape & Reel Dim ensions** 

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1 @ OD0 $ P0 ee P2 P1 eles A<br>fe K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23-6**|178.0±2.00|2.00<br>50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  1.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>3.20±0.20|3.10±0.20|1.50±0.20|



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**SM2617PSC** 

## **Taping Direction I nform at ion** 

## **SOT-23-6** 

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USER DIRECTION OF FEED<br>AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX<br>**----- End of picture text -----**<br>


## **Classificat ion Profile** 

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## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



|Table 1. SnPb Eutectic Process – Classification Temperatures(Tc)||
|---|---|
|**Package**<br>**Thickness**<br>**Volume mm**<br>**3**<br>**<350**<br>**Volume mm3 **<br>≥**350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~—_~~||
|Table 2. Pb-free Process – Classification Temperatures (Tc)||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6mm<br>260 °C<br>260 °C<br>260 °C<br>1.6mm – 2.5mm<br>260 °C<br>250 °C<br>245 °C<br>≥2.5mm<br>250 °C<br>245 °C<br>245 °C<br>~~——_————~~||
|**Reliability Test Program**||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000Hrs,100%of VGSmax@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~—_——_S=—_~~||
|**Custom er Service**||
|**Sinopower Semiconductor, Inc.**||



5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 

_ww w.sinopowersem i.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM2617PSC/sm2617psc-single-mosfet-p-channel-20v-sot-23-6)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM2617PSC)
---

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