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SM2421PSAN
SM2421PSAN, Single MOSFET, P Channel, -30V, SOT-23N
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- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: P
- BV(V): -30
- Package: View
- 2.5V max.: 94
- VGS (±V): 12
- VTH(V) typ.: -0.9
- ID (A) TA=25: -4.8
- Rg (Ω) typ.: 3.6
- Ciss (pF) typ.: 573
- Coss (pF) typ.: 74
- Crss (pF) typ.: 53
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 56
- RON(mΩ max) 4.5V max.: 68
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**®** sinopower WN **SM2421PSAN ®** P-Channel Enhancement Mode MOSFET ~~oo~~ ## **Features** ## **Pin Description** - -30V/-4.8A, - RDS(ON)= 56m Ω (Max.) @ VGS=-10V - RDS(ON)= 68m Ω (Max.) @ VGS=-4.5V - RDS(ON)= 94m Ω (Max.) @ VGS=-2.5V - Super High Dense Cell Design - Reliable and Rugged - Lead Free and Green Devices Available (RoHS Compliant) ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. **==> picture [92 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>S<br>G<br>Top View of SOT-23N<br>S<br>G<br>;<br>D<br>**----- End of picture text -----**<br> P-Channel MOSFET **Ordering and Marking I nform ation** SM2421PS Package Code AN : SOT-23N Assembly Material Operating Junction Temperature Range Handling Code C : -55 to 150[o] C Temperature Range Handling Code TR : Tape & Reel (3000ea/reel) Package Code Assembly Material G : Halogen and Lead Free Device ~~S~~ a SM2421PS AN : B21XX XX - Lot Code a ~~e~~ e Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. Copyright Sinopow er Sem iconductor, Inc. 1 Rev. A.5 - October, 2014 _ww w.sinopowersem i.com_ **®** sinopower MA **SM2421PSAN** **Absolute Maxim um Ratings** (TA = 25 ° C unless otherwise noted) |**Absolute Maxim um Ratings**|**Absolute Maxim um Ratings**(TA = 25A = 25= 25°C unless otherwise noted)|**Absolute Maxim um Ratings**(TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---|---| |**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br><br>||**Rating**<br><br>~~oe~~<br>|**Unit**<br><br>~~oe~~| |VDSS<br>~~ee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||-30<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>~~oe~~| |VGSS<br>~~ee~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>||±12<br>~~ee~~<br>~~oe~~<br>|| |ID*<br>~~aSe!~~|Continuous Drain Current<br>~~Se!~~|TA=25°C<br>~~Se!~~|-4.8<br>~~oe~~<br>~~Se!~~|A<br>~~oe~~| |||TA=70°C<br>~~Se!~~<br>~~ee~~|-3.8<br>~~Se!~~<br>~~ee~~|| |IDM*<br>~~pop~~|300µs Pulsed Drain Current<br>~~pop~~|TA=25°C<br>~~ee eee~~|-19<br>~~eee~~|| |||TA=70°C<br>~~ee eee~~|-15<br>~~eee~~|| |IS*<br>~~pop~~<br>~~a~~<br>~~—————————E~~|Diode Continuous Forward Current<br>~~popee eee~~<br>~~—————————E~~||-1<br>~~eee~~<br>~~—————————E~~|| |TJ<br>~~a~~<br>~~—————————E~~|Maximum Junction Temperature<br>~~—————————E~~||150<br>~~—————————E~~|°C| |TSTG<br>~~—————————E~~<br>~~a~~|Storage Temperature Range<br>~~—————————E~~<br>||-55 to 150<br>~~—————————E~~|| |PD*<br>~~—————————E~~<br>~~i!~~<br>~~pp~~|Maximum Power Dissipation<br>~~—————————E~~<br>~~i!~~<br>~~pp~~|TA=25°C<br>~~—————————E~~<br>~~oo~~<br>~~ee ee~~<br>|1.9<br>~~—————————E~~<br>~~oo~~<br>~~ee~~<br>|W<br>~~oo~~<br>~~ee~~<br>| |||TA=70°C<br>~~oo~~<br>~~ee ee~~<br>|1.2<br>~~oo~~<br>~~ee~~<br>|| |RθJA*<br>~~pp~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~pp~~<br>|t≤10s<br>~~ee ee~~<br>~~es~~<br>|65<br>~~ee~~<br>~~ee~~<br>|°C/W<br>~~ee~~<br>~~ee~~<br>| |||Steadystate<br>~~ee ee~~<br>~~es~~<br>|120<br>~~ee~~<br>~~ee~~<br>|| |RθJL<br><br>~~a~~|Thermal Resistance-Junction to Lead<br><br>|Steadystate<br>~~es ~~<br>|52<br> ~~ee~~<br>|| ## **Electrical Characteristics** (TA = 25 ° C unless otherwise noted) |**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~| |---|---|---|---|---|---|---|---| |**Static Characteristics**<br>~~Ce~~|||||||| |BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=-250µA<br>~~a~~<br>~~ee~~||-30<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|V<br>~~a~~| |IDSS<br>~~a~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~||-<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-1<br>~~a~~|µA<br>~~a~~| ||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~se~~|-<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~se~~|-30<br>~~a~~<br>~~a~~|| |VGS(th)<br>~~a~~<br>~~PR~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, IDS=-250µA<br>~~ee~~<br>~~ee~~||-0.5<br>~~ee~~<br>~~ee~~<br>~~se~~|-0.9<br>~~ee~~<br>~~ee~~<br>~~se~~|-1.3<br>~~ee~~|V<br>~~ee~~| |IGSS<br>~~PR~~|Gate Leakage Current|VGS=±12V, VDS=0V||-<br>~~se~~<br>~~ee~~|-<br>~~se~~<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~| |RDS(ON)<br>a <br>~~PR~~<br>~~a~~|Drain-Source On-State Resistance<br>|VGS=-10V, IDS=-4.8A<br>~~ee~~||-<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|47<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|56<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>| |||VGS=-4.5V, IDS=-3.8A<br>~~ee~~<br>||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|54<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|68<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|| |||VGS=-2.5V, IDS=-3A<br>~~ee~~<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>|70<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>|94<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>|| |VSD<br>a<br>~~a~~|Diode Forward Voltage<br>|ISD=-1A, VGS=0V<br>||-<br>~~ee~~<br>|-0.7<br>~~ee~~<br>|-1<br>|V<br>| |**Gate Charge Characteristics**<br>b<br>~~|~~|||||||| |Qg<br>~~a~~|Total Gate Charge<br>~~a~~|VDS=-15V, VGS=-10V,<br>IDS=-4.8A<br>~~a~~||-<br>~~a~~<br>~~pt~~|13.6<br>~~a~~<br>~~pt~~|-<br>~~a~~<br>~~pt~~|nC<br>~~a~~| |Qgs<br>~~a~~|Gate-Source Charge|||-<br>~~S|~~|1.2<br>~~S|~~|-<br>~~S|~~|| |Qgd<br>~~a~~|Gate-Drain Charge|||-<br>~~pT~~|2.0<br>~~pT~~|-<br>~~pT~~|| _ww w.sinopowersem i.com_ 2 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 **®** sinopower MA **SM2421PSAN** **Electrical Characteristics ( Cont.)** (TA = 25 ° C unless otherwise noted) |**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~| |---|---|---|---|---|---|---| |**Dynamic Characteristics**b||||||| |RG<br>~~a~~|Gate Resistance<br>~~a~~|VGS=0V,VDS=0V,F=1MHz<br>~~a~~|-<br>~~a~~|3.6<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~| |Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~a~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~|~~|573<br>~~a~~<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~| |Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~||-<br>~~a~~<br>~~| ~~<br>~~a~~<br>~~|~~<br>~~|~~|74<br>~~a~~<br> ~~|~~<br>~~a~~<br>~~|~~<br>~~|~~<br>|-<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~|~~<br>|| |Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~<br>~~a~~||-<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|tt~~|53<br>~~a~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~tt~~|-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~tt~~|| |td(ON)<br>~~a~~|Turn-on DelayTime|VDD=-15V, RL=10Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~|~~|-<br>~~|~~<br>~~pt~~|6.9<br><br>~~pt~~|-<br><br>~~pt~~|ns| |tr<br>~~a~~|Turn-on Rise Time||-<br>~~pt~~|12.3<br>~~pt~~|-<br>~~pt~~|| |td(OFF)<br>~~a~~|Turn-off DelayTime||-<br>~~pt~~|25<br>~~pt~~|-<br>~~pt~~|| |tf<br>~~a~~|Turn-off Fall Time||-<br>~~pt~~|13<br>~~pt~~|-<br>~~pt~~|| |trr<br>~~i~~<br>~~rr~~|Reverse RecoveryTime<br>~~i~~|IF=-4.8A, dlSD/dt =100A/µs|-<br>~~ft~~|16<br>~~ft~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~ft~~|ns<br>~~ft~~<br>~~ft~~| |Qrr<br>~~rr~~|Reverse Recovery Charge||-<br>~~ft~~|11<br>~~ft~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~ft~~|nC<br>~~ft~~<br>~~ft~~| Note a : Pulse test ; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note b : Guaranteed by design, not subject to production testing. _ww w.sinopowersem i.com_ 3 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 **®** ## **SM2421PSAN** ## **Typical Operating Characteristics** ## **Drain Current** **Power Dissipation** **==> picture [431 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 5<br>1.6 4<br>1.2 3<br>0.8 2<br>0.4 1<br>TA=25oC TA=25oC,VG=-10VA=25oC,VG=-10V=25oC,VG=-10VoC,VG=-10VC,VG=-10VG=-10V=-10V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10 0.2<br>0.1<br>300 µ s<br>0.05<br>1ms 0.1<br>1 0.02<br>10ms 0.01<br>100ms<br>0.01<br>0.1 Single Pulse<br>1s<br>DC<br>Mounted on 1in 2 pad<br>0.01 TA=25oC 1E-3 R θ JA : 65 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 30<br> -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot Drain Current (A)<br>P -<br>D<br>-I<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> **==> picture [192 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=-10VA=25oC,VG=-10V=25oC,VG=-10VoC,VG=-10VC,VG=-10VG=-10V=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br> Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Drain Current (A)<br> -<br>D<br>-I<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 _ww w.sinopowersem i.com_ 4 **®** ## **SM2421PSAN** ## **Typical Operating Characteristics ( Cont.)** **Output Characteristics** **==> picture [191 x 512] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>VGS=-3,-4,-5,-6,<br> -7,-8,-9,-10V -2.5V<br>15<br>12<br>9<br>-2V<br>6<br>3<br>-1.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> -VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>140<br>I =-4.8A<br>DS<br>120<br>100<br>80<br>60<br>40<br>20<br>1 2 3 4 5 6 7 8 9 10<br> -VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **Drain-Source On Resistance** **==> picture [189 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>105<br>90<br>V =-2.5V<br>GS<br>75<br>V =-4.5V<br>60 GS<br>45 V =-10V<br>GS<br>30<br>15<br>0 3 6 9 12 15 18<br> -ID - Drain Current (A)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [192 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Threshold Voltage<br>1.6<br>I DS =-250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 _ww w.sinopowersem i.com_ 5 **SM2421PSAN** **®** ## **Typical Operating Characteristics ( Cont.)** ## **Drain-Source On Resistance** ## **Source-Drain Diode Forward** **==> picture [434 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8 20<br>V = -10V<br>GS<br>1.6 I DS = -4.8A 10<br>1.4 T =150 o C<br>j<br>1.2<br>T =25oC<br>j<br>1.0 1<br>0.8<br>0.6<br>RON@Tj=25 o C: 47m Ω<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>900 10<br>Frequency=1MHz V =-15V<br>800 9 I DS=-4.8A<br>DS<br>8<br>700<br>7<br>600<br>Ciss<br>6<br>500<br>5<br>400<br>4<br>300<br>3<br>200<br>2<br>100 Coss 1<br>Crss<br>0 0 i<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14<br> -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance S<br>-I<br>C - Capacitance (pF) - Gate-source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 _ww w.sinopowersem i.com_ 6 **®** sinopower WN **SM2421PSAN** ## **Avalanche Test Circuit and W aveform s** **==> picture [166 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [158 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> tAV<br>EAS<br>— NW<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br> ## **Sw it ching Tim e Test Circuit and W aveform s** **==> picture [167 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br> **==> picture [145 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> td(on) tr td(off) tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 7 **®** sinopower “A **SM2421PSAN** ## **Package I nform at ion** **SOT-23N** **==> picture [434 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>e<br>SEE<br>VIEW A<br>uu] &<br>b c<br>e1<br>tt ~<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOT-23N INCHES RECOMMENDED LAND PATTERN<br>BO 0.8<br>L MIN. MAX. MIN. MAX.<br>A - 1.20 - 0.047<br>‘===<br>A1 0.00 0.10 0.000 0.004<br>—<br>A2 0.90 1.10 0.035 0.043<br>b 0.30 0.50 0.012 0.020 2.1<br>c 0.08 0.22 0.003 0.009<br>D 2.70 3.10 0.106 0.122 0.8<br>E 2.20 2.60 0.086 0.102<br>E1 1.20 1.40 0.047 0.055<br>= e 0.95 BSC 0.037 BSC 0.95<br>e1 1.90 BSC 0.075 BSC<br>‘Ss<br>L 0.30 0.60 0.012 0.024 UNIT: mm<br>0 0 ° 8 ° 0 ° 8 °<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br> burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br> per side.<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ 8 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 ## **SM2421PSAN ®** ~~$$$sem~~ **Carrier Tape & Reel Dim ensions** **==> picture [315 x 339] intentionally omitted <==** **----- Start of picture text -----**<br> OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>ro SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br> |**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**| |---|---|---|---|---|---|---|---|---| |**SOT-23N**|178.0±2.00|50 MIN.|9.4+2.00<br>-0.00<br>6.5+0.50<br>-0.20|6.5+0.50<br>-0.20 1.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05| ||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**| ||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>3.20±0.20|2.77±0.20|1.35±0.20| _ww w.sinopowersem i.com_ 9 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 **®** sinopower VN **SM2421PSAN** ## **Taping Direction I nform at ion** ## **SOT-23N** USER DIRECTION OF FEED ## **Classificat ion Profile** Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 _ww w.sinopowersem i.com_ 10 **®** sinopower WN **SM2421PSAN** ## **Disclaim er** Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. _ww w.sinopowersem i.com_ 11 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014 **SM2421PSAN** **®** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~——~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~———————_——~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HOLT JESD-22, A108 1000 Hrs, Bias @ 125 ° C PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~SSS~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C ## **Custom er Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 _ww w.sinopowersem i.com_ 12 Copyright Sinopow er Sem iconductor, Inc. Rev. A.5 - October, 2014
Updated at February 12, 2024
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