# SM2326NSAN, Single MOSFET, N Channel, 20V, SOT-23N

![Product image](https://novapart.co/image/sinopower:SM2326NSAN_N_CISS:300/)

**URL**: https://novapart.co/products/SM2326NSAN/sm2326nsan-single-mosfet-n-channel-20v-sot-23n
**SKU**: SM2326NSAN
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 20 |
| Package | SOT-23N |
| 1.8V Max. | 110 |
| 2.5V Max. | 90 |
| Vgs (±V) | 8 |
| Vth(V) Typ. | 0.7 |
| Id (A) Ta=25 | 3 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6519 |
| Ciss (Pf) Typ. | 300 |
| Coss (Pf) Typ. | 53 |
| Crss (Pf) Typ. | 47 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6519 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6519 |
| Ron(Mω Max) 4.5V Max. | 70 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM2326NSAN_N_CISS:300/)

> **SM2 326NSAN** sinopower **®** WN 

N-Channel Enhancement Mode MOSFET ~~co~~ 

## **Features** 

## **Pin Description** 

- 20V/3A, 

   - RDS(ON)= 70m Ω (max.) @ VGS= 4.5V 

   - RDS(ON)= 90m Ω (max.) @ VGS= 2.5V 

   - RDS(ON)= 110m Ω (max.) @ VGS= 1.8V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

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D<br>S<br>G<br>Top View of SOT-23N<br>**----- End of picture text -----**<br>


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## **Applications** 

- Power Management in DC/AC Inverter Systems 

- DC-DC Converter 

- Load Switch 

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G<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


# **Ordering and Marking I nform ation** 

SM2326NS Package Code AN : SOT-23N Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code TR : Tape & Reel (3000ea/reel) Package Code Assembly Material G : Halogen and Lead Free Device ~~S~~ a SM2326NS   AN : A26XX XX - Lot Code pe Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - October, 2014 

## **SM2 326NSAN** 

## **®** sinopower MA 

## **Absolute Maxim um  Ratings** (TA = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage||20|V|
|VGSS|Gate-Source Voltage||±8||
|ID*|Continuous Drain Current|VGS=4.5V|3|A|
|IDM*|300µsPulsedDrainCurrent||12||
|IS*|Diode Continuous Forward Current||1||
|TJ|Maximum Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-55 to 150||
|PD*|Maximum Power Dissipation|TA=25°C|0.83|W|
|||TA=100°C|0.3||
|RθJA*|Thermal Resistance-Junction to Ambient||150|°C/W|



2 Note: *Surface Mounted on 1in pad area, t ≤ 10 Sec. 

## **Electrical Characteristics** (TA = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~ss~~|**Test Conditions**<br>~~ss~~|**Min.**<br>~~ss~~|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~a~~<br>~~es~~<br>~~ss~~<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br><br>~~ee~~||20<br><br>|-<br><br>|-<br><br>|V<br>|
|IDSS<br>~~PRee~~<br>~~**a**~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~es~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~eepT~~<br>~~es~~||-<br>~~ee~~<br>|-<br>~~ee~~<br>|1<br>~~ee~~<br>|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~eepT~~<br>~~es~~|-<br>~~ee~~<br>~~pT~~<br>~~es~~|-<br>~~ee~~<br>~~pT~~|30<br>~~ee~~<br>~~pT~~||
|VGS(th)<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~es~~||0.5<br><br>~~es~~|0.7<br>|1<br>|V|
|IGSS<br>~~**a**~~|Gate Leakage Current<br>~~es~~|VGS=±8V, VDS=0V<br>~~ee~~<br>~~es ~~||-<br><br> ~~es~~<br>~~ee~~|-<br><br>~~ee~~|±100<br>|nA|
|RDS(ON)<br>a|Drain-Source On-state Resistance|VGS=4.5V, IDS=2.5A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|45<br>~~ee~~<br>~~ee~~<br>~~ee~~|70<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=2.5V, IDS=2.3A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|60<br> ~~ee~~<br>~~ee~~<br>~~ee~~|90<br>~~ee~~<br>~~ee~~||
|||VGS=1.8V, IDS=2A<br>~~po~~||-<br>~~ee~~<br>~~po~~|75<br>~~ee~~<br>~~po~~|110<br>~~ee~~<br>~~po~~||
|**Diode Characteristics**||||||||
|VSD<br>a<br>~~eo~~<br>~~Se~~|Diode Forward Voltage<br>~~eo~~|ISD=1A, VGS=0V<br>~~eo~~||-<br>~~eo~~|0.75<br>~~eo~~|1.2<br>~~eo~~|V<br>~~eo~~|
|trr<br>~~Se~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~|ISD=1A, dlSD/dt=100A/µs<br>~~ee~~||-<br>~~|~~|10<br>~~|~~|-<br>~~|~~|ns<br>~~|~~|
|Qrr<br>~~Se~~<br>~~a~~|Reverse Recovery Charge<br>~~ee~~|||-<br>~~|~~|3.2<br>~~|~~|-<br>~~|~~|nC<br>~~|~~|



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## **SM2 326NSAN** 

## **®** sinopower WN 

**Electrical Characteristics ( Cont.)** (TA = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~ee~~|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>b<br>~~a~~<br>~~esee~~<br>~~Ce~~<br>~~a~~<br>~~ee~~<br>~~pt~~|||||||
|Ciss<br>~~Ce~~<br>~~a~~|Input Capacitance<br>~~Ce~~<br>~~ee~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~Ce~~<br>~~|~~|-<br>~~Ce~~<br>~~pt~~|300<br>~~Ce~~<br>~~pt~~|-<br>~~Ce~~<br>~~pt~~|pF<br>~~Ce~~|
|Coss<br>~~a~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~pt~~<br>~~pt~~<br>~~|~~|53<br>~~pt~~<br>~~pt~~<br>|-<br>~~pt~~<br>~~pt~~<br>||
|Crss<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|tT~~<br>~~pf~~|47<br>~~tT~~<br>~~pf~~|-<br>~~tT~~<br>~~pf~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~pf~~<br>~~pt~~|3.2<br><br>~~pf~~<br>~~pt~~|-<br><br>~~pf~~<br>~~pt~~|ns|
|tr<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~||-<br>~~pf~~<br>~~pt~~<br>~~|~~|11.5<br>~~pf~~<br>~~pt~~<br>|-<br>~~pf~~<br>~~pt~~<br>||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~re~~|Turn-off DelayTime<br>~~ee~~||-<br>~~pt~~<br>~~|tT~~<br>~~|~~|25.5<br>~~pt~~<br>~~tT~~<br>|-<br>~~pt~~<br>~~tT~~<br>||
|tf<br>~~a~~<br>~~re~~|Turn-off Fall Time<br>~~ee~~||-<br>~~|tT~~<br>~~|tt~~|4<br>~~tT~~<br>~~tt~~|-<br>~~tT~~<br>~~tt~~||
|**Gate Charge Characteristics**<br>b<br>~~tT~~<br>~~re~~<br>~~|~~<br>~~Ce~~<br>~~a~~<br>~~ee~~<br>~~pt~~|||||||
|Qg<br>~~Ce~~<br>~~a~~<br>~~re~~|Total Gate Charge<br>~~Ce~~<br>~~ee~~|VDS=10V, VGS=4.5V,<br>IDS=2.5A<br>~~Ce~~<br>~~|~~<br>~~ee~~<br>~~|~~|-<br>~~Ce~~<br>~~pt~~<br>~~|~~|5<br>~~Ce~~<br>~~pt~~<br>|-<br>~~Ce~~<br>~~pt~~<br>|nC<br>~~Ce~~|
|Qgs<br>~~a~~<br>~~re~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~pt~~<br>~~|tT~~<br>~~|~~|0.5<br>~~pt~~<br>~~tT~~<br>|-<br>~~pt~~<br>~~tT~~<br>||
|Qgd<br>~~re~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~||-<br>~~|~~<br>~~|||~~|1.7<br><br>~~||~~|-<br><br>~~||~~||



Note a : Pulse test ; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note b : Guaranteed by design, not subject to production testing. 

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**SM2 326NSAN** 

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## **Typical Operating Characteristics** 

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Power Dissipation<br>**----- End of picture text -----**<br>


**Drain Current** 

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1.0 3.5<br>3.0<br>0.8<br>2.5<br>0.6<br>2.0<br>1.5<br>0.4<br>1.0<br>0.2<br>0.5<br>TA=25oC TA=25 o C,VG=10V<br>0.0 A 0.0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1<br>Duty = 0.5<br>10<br>aut 0.2<br>0.1<br>0.05<br>1 300 µ s<br>1ms 0.02<br>0.1<br>10ms 0.01<br>0.1<br>100ms<br>DC Single Pulse<br>o Mounted on 1in2 pad<br>0.01 TA=25 C 0.01 R θ JA : 150 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM2 326NSAN** 

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## **Typical Operating Characteristics ( Cont.)** 

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Output Characteristics<br>**----- End of picture text -----**<br>


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12<br>VGS=2,3,4,5,6,7,8,9,10V<br>10<br>1.8V<br>8<br>6<br>1.5V<br>4<br>2<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


VDS - Drain - Source Voltage (V) 

## **Gate-Source On Resistance** 

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120<br>IDS=2.5A<br>100<br>80<br>60<br>40<br>20<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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120<br>100 VGS=1.8V<br>80<br>V =2.5V<br>GS<br>60<br>V GS =4.5V<br>40<br>20<br>0 2 4 6 8 10 12<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.6<br>I DS =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM2 326NSAN** 

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## **Typical Operating Characteristics ( Cont.)** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>1.8<br>V GS  =4.5V  10<br> I  =2.5A<br>1.6 DS<br>1.4<br>T =150oC<br>j<br>1.2<br>T =25oC<br>1 j<br>1.0<br>0.8<br>0.6<br>0.4 _ RON@Tj=25oC: 45m Ω 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5<br>  Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>540 10<br>Frequency=1MHz<br>V = 10V<br>480 9  I DS= 2.5A<br>DS<br>8<br>420<br>7<br>360<br>Ciss 6<br>300<br>5<br>240<br>4<br>180<br>3<br>120 2<br>60 Coss 1<br>Crss<br>0 0 _<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM2 326NSAN** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>"|<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>a c tAV y<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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sinopower WX **®** 

**SM2 326NSAN** 

## **Package I nform at ion** 

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SOT-23N<br>**----- End of picture text -----**<br>


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D<br>e<br>SEE<br>VIEW A<br>b c<br>e1<br>Sy a<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOT-23N INCHES RECOMMENDED LAND PATTERN<br>BO 0.8<br>L MIN. MAX. MIN. MAX.<br>A - 1.20 - 0.047<br>=S_—— A1 0.00 0.10 0.000 0.004 a<br>A2 0.90 1.10 0.035 0.043<br>b 0.30 0.50 0.012 0.020 2.1<br>c 0.08 0.22 0.003 0.009<br>D 2.70 3.10 0.106 0.122 0.8<br>E 2.20 2.60 0.086 0.102<br>E1 1.20 1.40 0.047 0.055<br>=———— e 0.95 BSC 0.037 BSC 0.95<br>e1 1.90 BSC 0.075 BSC<br>Saale<br>L 0.30 0.60 0.012 0.024 UNIT: mm<br>0 0 ° 8 ° 0 ° 8 °<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br>           burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br>           per side.<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


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## **SM2 326NSAN** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dim ensions** 

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4 go OD0 P0 be P2 P1 o| A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23N**|178.0±2.00|2.00<br>50 MIN.|9.4+2.00<br>-0.00<br>6.5+0.50<br>-0.20|6.5+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|1.0 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>3.20±0.20|2.77±0.20|1.35±0.20|



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**®** sinopower VAN 

**SM2 326NSAN** 

## **Taping Direction I nform at ion** 

## **SOT-23N** 

USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - October, 2014 

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**®** sinopower MA 

**SM2 326NSAN** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - October, 2014 

**®** 

## **SM2 326NSAN** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=sS==—~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~————=—~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~S——————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

_ww w.sinopowersem i.com_ 

12 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - October, 2014 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM2326NSAN)
---

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