# SM2321PSA, Single MOSFET, P Channel, -30V, SOT-23

![Product image](https://novapart.co/image/sinopower:SM2321PSA_P_CISS:573/)

**URL**: https://novapart.co/products/SM2321PSA/sm2321psa-single-mosfet-p-channel-30v-sot-23
**SKU**: SM2321PSA
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -30 |
| Package | SOT-23 |
| 2.5V Max. | 94 |
| Vgs (±V) | 12 |
| Vth(V) Typ. | -0.9 |
| Id (A) Ta=25 | -4.3 |
| Rg (Ω) Typ. | 3.6 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6475 |
| Ciss (Pf) Typ. | 573 |
| Coss (Pf) Typ. | 74 |
| Crss (Pf) Typ. | 53 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6475 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6475 |
| Ron(Mω Max) 10V Max. | 56 |
| Ron(Mω Max) 4.5V Max. | 68 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM2321PSA_P_CISS:573/)

**SM2321PSA ®** 

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®<br>sinopower MA<br>**----- End of picture text -----**<br>


P-Channel Enhancement Mode MOSFET ~~oo~~ 

## **Features** 

## **Pin Description** 

- -30V/-4.3A , 

   - RDS(ON)= 56mΩ (Max.) @ VGS=-10V 

   - RDS(ON)= 68mΩ (Max.) @ VGS=-4.5V 

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   - DS(ON)= 94mΩ (Max.) @ VGS=-2.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, 

   - Portable Equipment and Battery Powered Systems. 

Top View of SOT-23-3 

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G<br>S<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


**Ordering and Marking Information** 

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SM2321PS Package Code<br>     A : SOT-23-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>     TR : Tape & Reel (3000ea/reel)<br>Package Code Assembly Material<br>     G : Halogen and Lead Free Device<br>E e<br>SM2321PS  A : B21XX XX - Lot Code<br>ee<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

1 

**®** sinopower MA 

## **SM2321PSA** 

**Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)||
|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br><br>||**Rating**<br><br>~~oe~~<br>|**Unit**<br><br>~~oe~~|
|VDSS<br>~~ee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||-30<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>~~oe~~|
|VGSS<br>~~ee~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>||±12<br>~~ee~~<br>~~oe~~<br>||
|ID*<br>~~aSe!~~|Continuous Drain Current<br>~~Se!~~|TA=25°C<br>~~Se!~~|-4.3<br>~~oe~~<br>~~Se!~~|A<br>~~oe~~|
|||TA=70°C<br>~~Se!~~<br>~~ee~~|-3.5<br>~~Se!~~<br>~~ee~~||
|IDM*<br>~~pop~~|300µs Pulsed Drain Current<br>~~pop~~|TA=25°C<br>~~ee eee~~|-17.3<br>~~eee~~||
|||TA=70°C<br>~~ee eee~~|-13.8<br>~~eee~~||
|IS*<br>~~pop~~<br>~~a~~<br>~~—————————E~~|Diode Continuous Forward Current<br>~~popee eee~~<br>~~—————————E~~||-1<br>~~eee~~<br>~~—————————E~~||
|TJ<br>~~a~~<br>~~—————————E~~|Maximum Junction Temperature<br>~~—————————E~~||150<br>~~—————————E~~|°C|
|TSTG<br>~~—————————E~~<br>~~a~~|Storage Temperature Range<br>~~—————————E~~<br>||-55 to 150<br>~~—————————E~~||
|PD*<br>~~—————————E~~<br>~~i!~~<br>~~pp~~|Maximum Power Dissipation<br>~~—————————E~~<br>~~i!~~<br>~~pp~~|TA=25°C<br>~~—————————E~~<br>~~oo~~<br>~~ee ee~~<br>|1.56<br>~~—————————E~~<br>~~oo~~<br>~~ee~~<br>|W<br>~~oo~~<br>~~ee~~<br>|
|||TA=70°C<br>~~oo~~<br>~~ee ee~~<br>|1.0<br>~~oo~~<br>~~ee~~<br>||
|RθJA*<br>~~pp~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~pp~~<br>|t≤10s<br>~~ee ee~~<br>~~es~~<br>|80<br>~~ee~~<br>~~ee~~<br>|°C/W<br>~~ee~~<br>~~ee~~<br>|
|||Steadystate<br>~~ee ee~~<br>~~es~~<br>|120<br>~~ee~~<br>~~ee~~<br>||
|RθJL<br><br>~~a~~|Thermal Resistance-Junction to Lead<br><br>|Steadystate<br>~~es ~~<br>|52<br> ~~ee~~<br>||



## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=-250µA<br>~~a~~<br>~~ee~~||-30<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|V<br>~~a~~|
|IDSS<br>~~a~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~||-<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-1<br>~~a~~|µA<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~se~~|-<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~se~~|-30<br>~~a~~<br>~~a~~||
|VGS(th)<br>~~a~~<br>~~PR~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, IDS=-250µA<br>~~ee~~<br>~~ee~~||-0.5<br>~~ee~~<br>~~ee~~<br>~~se~~|-0.9<br>~~ee~~<br>~~ee~~<br>~~se~~|-1.3<br>~~ee~~|V<br>~~ee~~|
|IGSS<br>~~PR~~|Gate Leakage Current|VGS=±12V, VDS=0V||-<br>~~se~~<br>~~ee~~|-<br>~~se~~<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|
|RDS(ON)<br>a <br>~~PR~~<br>~~a~~|Drain-Source On-State Resistance<br>|VGS=-10V, IDS=-4.3A<br>~~ee~~||-<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|47<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|56<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|
|||VGS=-4.5V, IDS=-3.5A<br>~~ee~~<br>||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|54<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|68<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>||
|||VGS=-2.5V, IDS=-2.7A<br>~~ee~~<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>|70<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>|94<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>||
|VSD<br>a<br>~~a~~|Diode Forward Voltage<br>|ISD=-1A, VGS=0V<br>||-<br>~~ee~~<br>|-0.7<br>~~ee~~<br>|-1<br>|V<br>|
|**Gate Charge Characteristics**<br>b<br>~~|~~||||||||
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~|VDS=-15V, VGS=-10V,<br>IDS=-4.3A<br>~~a~~||-<br>~~a~~<br>~~pt~~|13.6<br>~~a~~<br>~~pt~~|-<br>~~a~~<br>~~pt~~|nC<br>~~a~~|
|Qgs<br>~~a~~|Gate-Source Charge|||-<br>~~S|~~|1.2<br>~~S|~~|-<br>~~S|~~||
|Qgd<br>~~a~~|Gate-Drain Charge|||-<br>~~pT~~|2.0<br>~~pT~~|-<br>~~pT~~||



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

**®** sinopower MA 

## **SM2321PSA** 

**Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**b|||||||
|RG<br>~~a~~|Gate Resistance<br>~~a~~|VGS=0V,VDS=0V,F=1MHz<br>~~a~~|-<br>~~a~~|3.6<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~a~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~|~~|573<br>~~a~~<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~||-<br>~~a~~<br>~~| ~~<br>~~a~~<br>~~|~~<br>~~|~~|74<br>~~a~~<br> ~~|~~<br>~~a~~<br>~~|~~<br>~~|~~<br>|-<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~|~~<br>||
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~<br>~~a~~||-<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|tt~~|53<br>~~a~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~tt~~|-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~tt~~||
|td(ON)<br>~~a~~|Turn-on DelayTime|VDD=-15V, RL=10Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~|~~|-<br>~~|~~<br>~~pt~~|6.9<br><br>~~pt~~|-<br><br>~~pt~~|ns|
|tr<br>~~a~~|Turn-on Rise Time||-<br>~~pt~~|12.3<br>~~pt~~|-<br>~~pt~~||
|td(OFF)<br>~~a~~|Turn-off DelayTime||-<br>~~pt~~|25<br>~~pt~~|-<br>~~pt~~||
|tf<br>~~a~~|Turn-off Fall Time||-<br>~~pt~~|13<br>~~pt~~|-<br>~~pt~~||
|trr<br>~~i~~<br>~~rr~~|Reverse RecoveryTime<br>~~i~~|IF=-4.3A, dlSD/dt =100A/µs|-<br>~~ft~~|16<br>~~ft~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~ft~~|ns<br>~~ft~~<br>~~ft~~|
|Qrr<br>~~rr~~|Reverse Recovery Charge||-<br>~~ft~~|11<br>~~ft~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~ft~~|nC<br>~~ft~~<br>~~ft~~|



Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. 

3 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2321PSA** 

## **Typical Operating Characteristics** 

## **Drain Current** 

**Power Dissipation** 

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1.8 5<br>1.5<br>4<br>1.2<br>3<br>0.9<br>2<br>0.6<br>1<br>0.3<br>TA=25oC TA=25oC,VG=-10VA=25oC,VG=-10V=25oC,VG=-10VoC,VG=-10VC,VG=-10VG=-10V=-10V<br>0.0 _ 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10<br>0.2<br>300µs 0.1<br>1 1ms<br>0.05<br>10ms 0.1<br>0.02<br>100ms 0.01<br>0.1<br>1s<br>DC<br>Single Pulse Mounted on 1in2 pad<br>0.01 TA=25oC 0.01 RθJA : 80 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 30<br>   -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot  Drain Current (A)<br>P  -<br>D<br>-I<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=-10VA=25oC,VG=-10V=25oC,VG=-10VoC,VG=-10VC,VG=-10VG=-10V=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br>      Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Drain Current (A)<br> -<br>D<br>-I<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2321PSA** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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18<br>VGS=-3,-4,-5,-6,<br>        -7,-8,-9,-10V -2.5V<br>15<br>12<br>9<br>-2V<br>6<br>3<br>-1.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>  -VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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120<br>105<br>V =-2.5V<br>90 GS<br>75<br>V =-4.5V<br>60 GS<br>45<br>V =-10V<br>GS<br>30<br>15<br>0 3 6 9 12 15 18<br> -ID - Drain Current (A)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

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140<br>I =-4.3A<br>DS<br>120<br>100<br>80<br>60<br>40<br>20<br>1 2 3 4 5 6 7 8 9 10<br>  -VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate Threshold Voltage** 

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1.6<br>I DS =-250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2321PSA** 

## **Typical Operating Characteristics (Cont.)** 

**Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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1.8 20<br>V  = -10V<br>GS<br>1.6  I DS = -4.3A 10<br>1.4 T =150 o C<br>j<br>1.2<br>T =25oC<br>j<br>1.0 1<br>0.8<br>0.6<br>RON@Tj=25 o C: 47mΩ<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C)       -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>900 10<br>Frequency=1MHz V =-15V<br>800 9  I DS=-4.3A<br>DS<br>8<br>700<br>7<br>600<br>Ciss<br>6<br>500<br>5<br>400<br>4<br>300<br>3<br>200<br>2<br>100 Coss 1<br>Crss<br>0 0 i<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14<br>  -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance S<br>-I<br>C - Capacitance (pF)  - Gate-source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM2321PSA** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** sinopower WN 

## **SM2321PSA** 

## **Package Information** 

## **SOT-23-3** 

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D -T- SEATING PLANE < 4 mils<br>e<br>SEE<br>VIEW A<br>en<br>Ly<br>b c<br>e1<br>i L<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>| | FhoF<br>VIEW A<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


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SOT-23-3 RECOMMENDED LAND PATTERN<br>pe<br>SYM ee MILLIMETERS INCHES 0.8<br>BOL MIN. MAX. MIN. MAX.<br>—_—— A - 1.20 - 0.047<br>ee ee GY<br>A1 0.00 0.08 0.000 0.003<br>A2 0.90 1.12 0.035 0.044<br>eea ee LL . |<br>ee<br>b 0.30 0.50 0.012 0.020<br>ee 2.4<br>c 0.08 0.22 0.003 0.009<br>a ee ee<br>a D 2.70 ee 3.10 0.106 0.122 | ok<br>E 2.60 3.00 0.102 0.118<br>ee ee ee 0.8 B W WY.<br>E1 1.40 1.80 0.055 0.071<br>e 0.95 BSC 0.037 BSC<br>ee<br>e1 1.90 BSC 0.075 BSC<br>a<br>tT ML) LHL<br>L 0.30 0.60 0.012 0.024 0.95<br>es 0 0° 8° 0° 8°<br>a UNIT: mm<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br>           burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br>           per side.<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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8 

**®** 

## **SM2321PSA** 

## **Carrier Tape & Reel Dimensions** 

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**----- Start of picture text -----**<br>
+ [ @ OD0 © P0 éfe P2 P1 ofA A<br>|<br>_ K0 B + A0 OD1 B A i<br>SECTION A-A<br>SECTION B-B<br>— 7 d<br>T1<br>LI VY<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23-3**|178.0±2.00|2.00<br>50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.403.20±0.20|3.10±0.20|1.50±0.20|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

**®** sinopower VN 

**SM2321PSA** 

## **Taping Direction Information** 

## **SOT-23-3** 

## USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

10 

**®** 

## **SM2321PSA** 

## **Classification Reflow Profiles** 

**==> picture [460 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Profile Feature|Sn-Pb Eutectic Assembly|Pb-Free Assembly|
|Preheat & Soak|100 °C|150 °C|
|Temperature min (Tsmin)|150 °C|200 °C|
|Temperature max (Tsmax)|
|60-120 seconds|60-120 seconds|
|Time (Tsmin to Tsmax) (ts)|
|Average ramp-up rate|3 °C/second max.|3°C/second max.|
|(Tsmax to TP)|
|Liquidous temperature (TL)|183 °C|217 °C|
|Time at liquidous (tL)|60-150 seconds|60-150 seconds|
|Peak package body Temperature|
|*|See Classification Temp in table 1|See Classification Temp in table 2|
|(Tp)|
|Time (tP)** within 5°C of the specified|
|20** seconds|30** seconds|
|classification temperature (Tc)|
|Average ramp-down rate (Tp to Tsmax)|6 °C/second max.|6 °C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.|
|** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|

**----- End of picture text -----**<br>


Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=sSS=—~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM2321PSA/sm2321psa-single-mosfet-p-channel-30v-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM2321PSA)
---

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