# SM2313PSA, Single MOSFET, P Channel, -20V, SOT-23

![Product image](https://novapart.co/image/sinopower:SM2313PSA_P_CISS:357/)

**URL**: https://novapart.co/products/SM2313PSA/sm2313psa-single-mosfet-p-channel-20v-sot-23
**SKU**: SM2313PSA
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -20 |
| Package | SOT-23 |
| 1.8V Max. | 193 |
| 2.5V Max. | 110 |
| Vgs (±V) | 12 |
| Vth(V) Typ. | -0.7 |
| Id (A) Ta=25 | -3.5 |
| Rg (Ω) Typ. | 4.2 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6469 |
| Ciss (Pf) Typ. | 357 |
| Coss (Pf) Typ. | 72 |
| Crss (Pf) Typ. | 61 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6469 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6469 |
| Ron(Mω Max) 4.5V Max. | 73 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM2313PSA_P_CISS:357/)

## **SM2313PSA** 

## **®** sinopower N 

P-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- -20V/-3.5A, 

   - RDS(ON)= 73mΩ (Max.) @ VGS=-4.5V RDS(ON)= 110mΩ (Max.) @ VGS=-2.5V 

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- RDS(ON)= 193mΩ (Max.) @ VGS=-1.8V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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Top View of SOT-23-3<br>**----- End of picture text -----**<br>


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P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

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SM2313PS Package Code<br>     A : SOT-23-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>     TR : Tape & Reel (3000ea/reel)<br>=<br>Package Code Assembly Material<br>     G : Halogen and Lead Free Device<br>SM2313PS  A : B13XX XX - Lot Code<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

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**®** sinopower MA 

|**Symbol**<br>~~——~~|**Parameter**<br>~~——~~|**Parameter**<br>~~——~~|**Rating**<br>~~——~~|**Unit**<br>~~——~~|
|---|---|---|---|---|
|VDSS<br>~~——~~|Drain-Source Voltage<br>~~——~~||-20<br>~~——~~|V<br>~~——~~|
|VGSS<br>~~——~~|Gate-Source Voltage<br>~~——~~||±12<br>~~——~~||
|ID*<br>~~——~~|Continuous Drain Current<br>~~——~~|TA=25°C<br>~~——~~|-3.5<br>~~——~~|A<br>~~——~~<br>||
|||TA=70°C<br>~~——~~|-2.8<br>~~——~~||
|IDM*<br>~~——~~|300µs Pulsed Drain Current<br>~~——~~|TA=25°C<br>~~——~~|-14.2<br>~~——~~||
|||TA=70°C<br>~~——~~|-11.4<br>~~——~~||
|IS*<br>~~——~~|Diode Continuous Forward Current<br>~~——~~||-1<br>~~——~~||
|TJ<br>~~——~~|Maximum Junction Temperature<br>~~——~~||150<br>~~——~~|°C<br>~~——~~|
|TSTG<br>~~——~~|Storage Temperature Range<br>~~——~~||-55 to 150<br>~~——~~||
|PD*<br>~~——~~|Maximum Power Dissipation<br>~~——~~|TA=25°C<br>~~——~~|1<br>~~——~~|W<br>~~——~~<br>||
|||TA=70°C<br>~~——~~|0.7<br>~~——~~||
|RθJA*<br>~~——~~|Thermal Resistance-Junction to Ambient<br>~~——~~|t≤10s<br>~~——~~|90<br>~~——~~|°C/W<br>~~——~~|
|||Steady state<br>~~——~~|125<br>~~——~~||



|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>Drain-Source Breakdown Voltage<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=-250µA<br>||-20<br>|-<br>|-<br>|V<br>|
|IDSS<br>Zero Gate Voltage Drain Current<br>~~ee~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>|VDS=-16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-30<br>~~ee~~||
|VGS(th)<br>Gate Threshold Voltage<br>~~PR~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=-250µA<br>~~a~~||-0.5<br>~~a~~|-0.7|-1|V|
|IGSS<br>Gate Leakage Current<br>~~PRa a~~|Gate Leakage Current<br>~~a~~|VGS=±12V, VDS=0V<br>~~a ~~||-<br> ~~a~~<br>~~ee~~|-<br>~~ee~~|±100<br>~~ee~~|nA|
|RDS(ON)<br>a Drain-Source On-State Resistance|Drain-Source On-State Resistance|VGS=-4.5V, IDS=-3.5A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|58<br>~~ee~~<br>~~ee~~<br>~~ee~~|73<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=-2.5V, IDS=-2.2A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|82<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|110<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=-1.8V, IDS=-0.9A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|130<br> ~~ee~~<br>~~ee~~<br>~~ee~~|193<br>~~ee~~<br>~~ee~~||
|VSD<br>a<br>Diode Forward Voltage<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=-1A, VGS=0V<br>~~a~~||-<br>~~ee ~~<br>~~a~~|-0.7<br> ~~ee~~<br>~~a~~|-1<br>~~a~~|V<br>~~a~~|
|**Gate Charge Characteristics**<br>b<br>~~|~~<br>~~|~~||||||||
|Qg<br>Total Gate Char<br>~~a~~<br>~~rr~~|Total Gate Charge<br>~~a~~|VDS=-10V, VGS=-4.5V,<br>IDS=-3.5A<br>~~a~~<br>~~|~~<br>~~**|**~~||-<br>~~a~~<br>~~||~~|5.2<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~|nC<br>~~a~~|
|Qgs<br>Gate-Source Char<br>~~rr~~<br>~~a~~|Gate-Source Charge|||-<br>~~||~~<br>~~P|~~<br>~~**|**~~|0.7<br>~~|~~<br>~~P|~~|-<br>~~|~~<br>~~P|~~||
|Qgd<br>Gate-Drain Char<br>~~rr~~<br>~~a~~|Gate-Drain Charge|||-<br>~~|~~<br>~~**|**~~|1.8<br>~~|~~|-<br>~~|~~||



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**®** sinopower WN 

## **SM2313PSA** 

## **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>**b**<br>~~eeee ee~~<br>~~|~~<br>~~Pe~~|||||||
|RG<br>~~|~~<br>~~Pe~~<br>~~es~~|Gate Resistance<br>~~|~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~|~~<br>~~ee~~<br>~~—~~|-<br>~~|~~<br>~~—~~<br>~~|~~|4.2<br>~~|~~<br>~~|~~|-<br>~~|~~|Ω<br>~~|~~|
|Ciss<br>~~Pe~~<br>~~es~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-10V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~—~~<br>~~ff~~<br>~~ff~~<br>~~ee~~<br>~~ff~~|-<br>~~—~~<br>~~|~~<br>~~ff~~|357<br>~~|~~<br>~~ff~~|-<br>~~ff~~|pF|
|Coss<br>~~es~~<br>~~a~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~ff~~<br>~~ff~~|72<br>~~|~~<br>~~ff~~<br>~~ff~~|-<br>~~ff~~<br>~~ff~~||
|Crss<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ff~~<br>~~ff~~<br>~~ff~~|61<br>~~ff~~<br>~~ff~~<br>~~ff~~|-<br>~~ff~~<br>~~ff~~<br>~~ff~~||
|td(ON)<br>~~es ~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br> ~~ee~~<br>~~ee~~<br>~~ee~~|VDD=-10V, RL=10Ω,<br>IDS=-1A, VGEN=-4.5V,<br>RG=6Ω<br>~~ff~~<br>~~ee~~<br>~~ff~~<br>~~ee~~<br>~~—~~<br>~~—~~<br>~~—ff~~|-<br>~~ff~~<br>~~ff~~<br>~~—~~<br>~~|~~|5.6<br>~~ff~~<br>~~ff~~<br>~~|~~|-<br>~~ff~~<br>~~ff~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~||-<br>~~ff~~<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|13.2<br>~~ff~~<br>~~|~~<br>~~|~~|-<br>~~ff~~||
|td(OFF)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~<br>~~—~~|21<br>~~|~~<br>~~|~~<br>|-<br>||
|tf<br>~~a~~<br>~~a~~<br>~~SS~~|Turn-off Fall Time<br>~~SS~~||-<br>~~—~~<br>~~|~~<br>~~—ff~~|4.5<br>~~|~~<br>~~ff~~|-<br>~~ff~~||
|trr<br>~~a~~<br>~~SS~~<br>~~a~~|Reverse RecoveryTime<br>~~SS~~|ISD=-3.5A, dlSD/dt =100A/µs<br>~~—ff~~<br>~~ee~~<br>~~ee~~|-<br>~~—ff~~<br>~~ee~~|12<br>~~ff~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~||
|Qrr<br>~~SS~~<br>~~a~~|Reverse RecoveryCharge<br>~~SS~~||-<br>~~ff~~<br>~~ee~~<br>~~ee~~|6.6<br>~~ff~~<br>~~ee~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~|



Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. 

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**®** 

## **SM2313PSA** 

## **Typical Operating Characteristics** 

## **Power Dissipation** 

## **Drain Current** 

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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T A =25 o C,V G =-4.5V<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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1.2 4.0<br>3.5<br>1.0<br>3.0<br>0.8<br>2.5<br>0.6 2.0<br>1.5<br>0.4<br>1.0<br>0.2<br>0.5<br>TA=25 o C T A =25 o C,V G =-4.5V<br>0.0 0.0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1 300µs<br>0.02<br>1ms<br>0.1<br>10ms 0.01<br>0.1 100ms<br>1s<br>DC Single Pulse<br>T A =25 o C RMounted on 1inθJA : 90 oC/W 2  pad<br>0.01 0.01<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30<br>-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P  - Drain Current (A)<br>D<br>-I<br>- Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2313PSA** 

## **Typical Operating Characteristics (Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>14 240<br>12 210 V GS =-1.8V<br>10 VGS=-2.5,-3,-4,-5, 180<br>        -6,-7,-8,-9,-10V<br>150<br>8<br>120<br>6 -2V V GS =-2.5V<br>90<br>4 -1.8V V GS =-4.5V<br>60<br>2<br>-1.5V 30<br>0 os 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14<br>-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>200 1.6<br>IDS=-3.5A I DS  = -250µA<br>1.4<br>160<br>1.2<br>120<br>1.0<br>0.8<br>80<br>0.6<br>40<br>0.4<br>0 i. 0.2<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>-VGS - Gate - Source Voltage (V)  Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A)<br>D   - On - Resistance (m<br>-I DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**SM2313PSA** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

## **Source-Drain Diode Forward** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>1.8 10<br>V GS  = -4.5V<br>1.6  I DS  = -3.5A<br>1.4 T =150oC<br>j<br>1.2 T =25oC<br>1 j<br>1.0<br>0.8<br>0.6<br>RON@Tj=25 o C: 58mΩ<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>640 10<br>Frequency=1MHz 9 VDS=-10V<br>560  I =-3.5A<br>DS<br>8<br>480<br>7<br>400<br>6<br>Ciss<br>320 5<br>4<br>240<br>3<br>160<br>2<br>80 Crss Coss<br>1<br>0 0 ia<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM2313PSA** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** sinopower WN 

## **SM2313PSA** 

## **Package Information** 

## **SOT-23-3** 

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D -T- SEATING PLANE < 4 mils<br>e<br>SEE<br>VIEW A<br>en<br>Ly<br>b c<br>e1<br>i L<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>| | FhoF<br>VIEW A<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


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SOT-23-3 RECOMMENDED LAND PATTERN<br>pe<br>SYM ee MILLIMETERS INCHES 0.8<br>BOL MIN. MAX. MIN. MAX.<br>—_—— A - 1.20 - 0.047<br>ee ee GY<br>A1 0.00 0.08 0.000 0.003<br>A2 0.90 1.12 0.035 0.044<br>eea ee LL . |<br>ee<br>b 0.30 0.50 0.012 0.020<br>ee 2.4<br>c 0.08 0.22 0.003 0.009<br>a ee ee<br>a D 2.70 ee 3.10 0.106 0.122 | ok<br>E 2.60 3.00 0.102 0.118<br>ee ee ee 0.8 B W WY.<br>E1 1.40 1.80 0.055 0.071<br>e 0.95 BSC 0.037 BSC<br>ee<br>e1 1.90 BSC 0.075 BSC<br>a<br>tT ML) LHL<br>L 0.30 0.60 0.012 0.024 0.95<br>es 0 0° 8° 0° 8°<br>a UNIT: mm<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br>           burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br>           per side.<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2313PSA** 

## **Carrier Tape & Reel Dimensions** 

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+ [ @ OD0 © P0 éfe P2 P1 ofA A<br>|<br>_ K0 B + A0 OD1 B A i<br>SECTION A-A<br>SECTION B-B<br>— 7 d<br>T1<br>LI VY<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23-3**|178.0±2.00|2.00<br>50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.403.20±0.20|3.10±0.20|1.50±0.20|



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**®** sinopower VN 

**SM2313PSA** 

## **Taping Direction Information** 

## **SOT-23-3** 

## USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2313PSA** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~—_~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——_————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~—S==_~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM2313PSA/sm2313psa-single-mosfet-p-channel-20v-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM2313PSA)
---

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