# SM2217PSQG, Single MOSFET, P Channel, -20V, DFN2x2A-6_EP

![Product image](https://novapart.co/image/sinopower:SM2217PSQG_P_CISS:1608/)

**URL**: https://novapart.co/products/SM2217PSQG/sm2217psqg-single-mosfet-p-channel-20v-dfn2x2a
**SKU**: SM2217PSQG
**Reference SKUs**: SSM6J501NU
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -20 |
| Package | DFN2x2A-6_EP |
| 1.8V Max. | 40 |
| 2.5V Max. | 25 |
| Vgs (±V) | 12 |
| Id (A) Ta=25 | -9.9 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6387 |
| Ciss (Pf) Typ. | 1608 |
| Coss (Pf) Typ. | 294 |
| Crss (Pf) Typ. | 257 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6387 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6387 |
| Ron(Mω Max) 4.5V Max. | 17 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM2217PSQG_P_CISS:1608/)

sinopower VA **®** 

**SM2217PSQG ®** 

P-Channel Enhancement Mode MOSFET ~~oo~~ 

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Pin Description<br>-20V/-9.9A,<br>S<br>RDS(ON) = 17m Ω (max.) @ VGS =-4.5V D [D] D<br>RDS(ON) = 25m Ω (max.) @ VGS =-2.5V<br>RDS(ON) = 40m Ω (max.) @ VGS =-1.8V eS G S Pin 1<br>D [D]<br>    Reliable and Rugged<br>    Lead Free and Green Devices Available DFN2x2-6<br>(RoHS Compliant) (1,2,5,6)<br>    HBM ESD protection level pass 2KV DD DD<br>The diode connected between the gate and<br>source serves only as protection against ESD. No<br>gate overvoltage rating is implied.<br>(3)G<br>(4)S<br>**----- End of picture text -----**<br>


## **Features** 

- -20V/-9.9A, 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

- HBM ESD protection level pass 2KV 

**Note :** The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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P-Channel MOSFET<br>**----- End of picture text -----**<br>


**Ordering and Marking I nform ation** 

SM2217PS Package Code QG : DFN2x2-6 Operating Junction Temperature Range Assembly Material C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel (3000ea/reel) Package Code Assembly Material G : Halogen and Lead Free Device ~~E~~ el 2217B SM2217PS  QG : XXXXX XXXXX - Lot Code ~~p~~ I Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**®** 

## **SM2217PSQG** 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~rs~~|**Parameter**<br>~~rs~~|**Rating**<br>~~rs~~|**Unit**<br>~~rs~~|
|---|---|---|---|---|
|VDSS<br>~~ee~~<br>~~EE~~<br>~~ee~~<br>~~pf~~|Drain-Source Voltage<br>~~rs~~<br>~~EE~~<br>~~en~~<br>~~pf~~||-20<br>~~rs~~<br>~~EE~~<br>~~n~~<br>~~GO~~|V<br>~~rs~~<br>~~EE~~<br>~~GO~~|
|VGSS<br>~~EE~~<br>~~ee~~<br>~~pf~~|Gate-Source Voltage<br>~~EE~~<br>~~en~~<br>~~pf~~||±12<br>~~EE~~<br>~~n~~<br>~~GO~~||
|ID<br>a<br>~~EE~~<br>~~ee~~<br>~~pf~~<br>~~ee~~|Continuous Drain Current (VGS=-4.5V)<br>~~EE~~<br>~~en~~<br>~~pf~~|TA=25°C<br>~~EE~~<br>~~n~~|-9.9<br>~~EE~~<br>~~n~~<br>~~GO~~|A<br>~~EE~~<br>~~GO~~<br>~~tn~~<br>|
|||TA=70°C|-7.9<br>~~GO~~||
|IDM<br>a<br>~~pf~~<br>~~ee~~|Pulsed Drain Current (VGS=-4.5V)<br>~~pf~~||-39.6 *<br>~~GO~~||
|IS<br>a<br>~~pf~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~|Diode Continuous Forward Current<br>~~pf~~<br>~~tn~~<br>||-2<br>~~GO~~<br>~~tn~~<br>~~DR~~<br>||
|TJ<br>~~pf~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~|Maximum Junction Temperature<br>~~pf~~<br>~~tn~~<br><br>~~**G**ent (RS~~||150<br>~~GO~~<br>~~tn~~<br>~~DR~~<br><br>~~(RS~~|°C<br>~~GO~~<br>~~tn~~<br>|
|IAS<br>b<br>~~ee~~<br>~~a rs~~<br>~~ee~~|Avalanche Current, Singlepulse<br>~~tn~~<br>~~rs~~<br>~~ns~~|L=0.1mH<br>~~tn~~<br>~~rs~~<br>~~**G**ent (RS~~<br>~~R~~|-18<br>~~tn~~<br>~~DR~~<br>~~rs~~<br>~~(RS~~<br>~~GR~~|A<br>~~tn~~<br>~~rs~~|
|EAS<br>b<br>~~ee~~|Avalanche Energy, Singlepulse<br>~~ns~~|L=0.1mH<br>~~**G**ent (RS~~<br>~~R~~|16<br>~~(RS~~<br>~~GR~~|mJ|
|TSTG<br>~~ee~~|Storage Temperature Range<br>~~**G**ent (RS~~<br>~~ns~~<br>~~R~~||-55 to 150<br>~~(RS~~<br>~~GR~~|°C|
|PD<br>a<br>~~ee~~|Maximum Power Dissipation<br>|TA=25°C|2.5|W<br>~~ee~~|
|||TA=70°C<br>~~**e**e~~<br>|1.6<br>~~ee~~<br>~~eee~~||
|RθJA<br>a<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~e~~|t≤10s<br>~~**e**e~~<br>~~e~~|50<br>~~ee~~<br>~~eee~~|°C/W<br>~~ee~~|
|||SteadyState<br>~~**e**e~~<br>~~e~~|80<br>~~ee~~<br>~~eee~~||



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**SM2217PSQG** 

## **®** sinopower WN 

**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~Ce~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>~~Cea~~|Drain-Source Breakdown Voltage<br>|VGS=0V,IDS=-250µA<br>||-20<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~eee~~|VDS=-16V, VGS=0V<br>TJ=85°C<br>~~eee~~<br>~~a~~||-<br>~~eee~~|-<br>~~eee~~|-1<br>~~eee~~|µA<br>~~eee~~|
||||TJ=85°C<br>~~eee~~<br>~~a~~|-<br>~~eee~~<br>~~a~~|-<br>~~eee~~<br>~~a~~|-30<br>~~eee~~<br>~~a~~||
|VGS(th)<br><br>~~a~~|Gate Threshold Voltage<br>~~eee~~|VDS=VGS, IDS=-250µA<br>~~eee~~<br>~~a~~||-0.5<br>~~eee~~<br>~~a~~|-<br>~~eee~~<br>~~a~~|-1<br>~~eee~~<br>~~a~~|V<br>~~eee~~|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current|VGS=±12V, VDS=0V||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA|
|RDS(ON)<br>c<br>~~a~~<br>~~Ce~~|Drain-Source On-state Resistance<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|VGS=-4.5V, IDS=-9.9A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|13<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|17<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|mΩ<br>|
|||VGS=-2.5V, IDS=-6.3A<br>~~ee~~<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>|18<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|25<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||
|||VGS=-1.8V, IDS=-2A<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee~~<br>|26<br>~~ee~~<br>~~ee~~<br>|40<br>~~ee~~<br>~~ee~~<br>||
|**Diode Characteristics**<br>~~ee ee~~<br>~~ee ee~~<br>~~Ce~~||||||||
|VSD<br>c<br>~~Cea~~|Diode Forward Voltage<br><br>|ISD=-1A, VGS=0V<br> <br>||-<br> ~~ee~~<br>|-0.7<br>~~ee~~<br>|-1<br>~~ee~~<br>|V<br>|
|trr<br>d<br>~~fn~~<br>~~ee~~|Reverse Recovery Time<br>~~fn~~|ISD=-9.9A,<br>dlSD/dt=100A/µs<br>~~fn~~||-<br>~~fn~~<br>~~ee~~|34<br>~~fn~~<br>~~ee~~|-<br>~~fn~~<br>~~eee~~|ns<br>~~fn~~<br>~~ee~~|
|Qrr<br>d<br>~~fn~~<br>~~ee~~|Reverse Recovery Charge<br>~~fn~~|||-<br>~~fn~~<br>~~ee~~|15<br>~~fn~~<br>~~ee~~|-<br>~~fn~~<br>~~eee~~|nC<br>~~fn~~<br>~~ee~~|
|**Dynamic Characteristics**<br>d<br>~~ee~~<br>~~ee ee eee ee~~<br>~~|~~<br>~~ee~~<br>~~**|**~~||||||||
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-10V,<br>Frequency=1.0MHz<br>~~a~~<br>~~ee~~<br>~~**|**~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~**|**~~<br>~~fT~~|1608<br>~~a~~<br>~~fT~~|-<br>~~a~~<br>~~fT~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~ee ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~**|**~~<br>~~fT~~<br>~~|~~|294<br>~~fT~~<br>~~|~~|-<br>~~fT~~<br>~~|~~||
|Crss<br>~~a~~<br>~~ee ee~~<br>~~ee ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~fT~~<br>~~|~~<br>~~|~~|257<br>~~fT~~<br>~~|~~<br>~~|~~|-<br>~~fT~~<br>~~|~~<br>~~|~~||
|td(ON)<br>~~ee ee~~<br>~~ee ee~~<br>~~a~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=-10V, RL=10Ω,<br>IDS=-1A, VGEN=-4.5V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~fT~~|8<br>~~|~~<br>~~|~~<br>~~fT~~|-<br>~~|~~<br>~~|~~<br>~~fT~~|ns|
|tr<br>~~ee ee~~<br>~~a~~<br>~~re~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~eee~~|||-<br>~~|~~<br>~~fT~~<br>~~Pt~~|13<br>~~|~~<br>~~fT~~<br>~~Pt~~|-<br>~~|~~<br>~~fT~~<br>~~Pt~~||
|td(OFF)<br>~~a~~<br>~~re~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~eee~~|||-<br>~~fT~~<br>~~Pt~~<br>~~Ft~~|25<br>~~fT~~<br>~~Pt~~<br>~~Ft~~|-<br>~~fT~~<br>~~Pt~~<br>~~Ft~~||
|tf<br>~~re~~<br>~~ee~~|Turn-off Fall Time<br>~~eee~~|||-<br>~~Pt~~<br>~~Ft~~|170<br>~~Pt~~<br>~~Ft~~|-<br>~~Pt~~<br>~~Ft~~||
|**Gate Charge Characteristics**<br>d<br>~~ee~~<br>~~Ft~~<br>~~|~~<br>~~ee~~<br>~~eeee~~||||||||
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge|VDS=-10V, VGS=-4.5V,<br>IDS=-9.9A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|nC|
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~|||-<br>~~ee ~~<br>~~ee~~<br>~~|~~|0.8<br> ~~ee~~<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~ee~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~ee~~<br>~~|~~|7.6<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~||



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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>TA=25 o C<br>0.0 A<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>300 µ s<br>1ms<br>1 10ms<br>100ms<br>1s<br>0.1 DC<br>0.01 TA=25oC<br>0.01 0.1 1 10 100<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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12<br>10<br>8<br>6<br>4<br>2<br>TA=25oC,VG=-4.5V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Thermal Transient Impedance** 

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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1 0.02<br>0.01<br>Mounted on 1in2 pad<br>0.01 Single Pulse R θ JA : 50 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**SM2217PSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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40<br>V GS =-3,-4,-5,-6,-7,-8,-9,-10V<br>35<br>-2V<br>30<br>-1.8V<br>25<br>20<br>15<br>-1.5V<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS - Drain-Source Voltage (V)<br>Gate-Source On Resistance<br>60<br>I =-9.9A<br>DS<br>50<br>40<br>30<br>20<br>10<br>0<br>1 2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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45<br>40<br>V =-1.8V<br>GS<br>35<br>30<br>25<br>V =-2.5V<br>20 GS<br>V =-4.5V<br>15 GS<br>10<br>5<br>0 8 16 24 32 40<br>-ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS  =-250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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1.8 40<br>V  = -4.5V<br>GS<br> I  = -9.9A<br>1.6 DS<br>10<br>1.4 T =150 o C<br>j<br>1.2 T =25 o C<br>j<br>1.0<br>1<br>0.8<br>0.6<br>RON@Tj=25 o C: 13.5m Ω<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5<br>Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>2700 10<br>Frequency=1MHz V =-10V<br>DS<br>2400 9  I =-9.9A<br>DS<br>2100 8<br>7<br>1800<br>Ciss 6<br>1500<br>5<br>1200<br>4<br>900<br>3<br>600<br>2<br>Crss Coss<br>300<br>1<br>0 0<br>0 4 8 12 16 20 0 7 14 21 28 35 42<br>-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)G - Gate Charge (nC) - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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10<br>V =-10V<br>DS<br>9<br> I =-9.9A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 7 14 21 28 35 42<br>QG - Gate Charge (nC)G - Gate Charge (nC) - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

**SM2217PSQG** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>_-- WS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


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sinopower VA **®** 

**SM2217PSQG** 

## **Package I nform at ion** 

## **DFN2x2-6** 

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E<br>PIN 1<br>INDEX AREA<br>1 6<br>2 5 SEATING PLANE<br>3 4<br>A A<br>PIN#1 IDENTIFICATION A1<br>CHAMFER 0.150X45o<br>A3<br>L K5<br>6 1<br>E1<br>K6<br>5 2<br>K3<br>K1<br>4 3<br>i K4<br>S DFN2x2-6 RECOMMENDED LAND PATTERN<br>Y<br>M MILLIMETERS INCHES<br>B<br>O<br>L MIN. MAX. MIN. MAX.<br>0.65 0.3<br>A 0.70 0.80 0.028 0.031<br>A1 0.00 0.05 0.000 0.002<br>A3 0.200 REF 0.008 REF<br>b 0.25 0.35 0.010 0.014<br>D 1.90 2.10 0.075 0.083<br>E 1.90 2.10 0.075 0.083<br>D1 0.90 1.10 0.035 0.043<br>E1 0.90 1.10 0.035 0.043<br>0.35<br>e 0.65 BSC 0.026 BSC<br>L 0.20 0.30 0.008 0.012 1.6<br>K1 0.65 0.85 0.026 0.033 UNIT: mm<br>K2 0.20 - 0.008 -<br>K3 0.20 - 0.008 -<br>K4 0.32 - 0.013 -<br>K5 0.20 0.26 0.008 0.010<br>K6 0.45 0.55 0.018 0.022<br>D A A1<br>b D1<br>e<br>K2<br>0.275<br>0.3 5<br>2.05 1.2 0.84<br>1.77<br>0.36<br>**----- End of picture text -----**<br>


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## **SM2217PSQG** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dim ensions** 

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P2 P0<br>D0<br>T<br>B0<br>B-B K0<br>A-A B-B<br>D1<br>P1<br>a<br>A0<br>A-A<br>d<br>T1<br>E1<br>F<br>W<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN2x2-6**|178.0±2.00|60.0±0.50|9.0±2.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  2.0±0.20|21.0±0.50|0.50<br>8.0+0.30<br>-0.10|1.75±0.10|0.10<br>3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.3±0.05|0.05<br>2.3±0.10|2.3±0.10|0.10<br>1.05±0.10|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**®** sinopower VN 

**SM2217PSQG** 

## **Taping Direction I nform at ion** 

## **DFN2x2-6** 

## USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

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**®** sinopower MA 

**SM2217PSQG** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**SM2217PSQG** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. 

|Table 1. SnPb Eutectic Process – Classification Temperatures(Tc)||
|---|---|
|**Package**<br>**Thickness**<br>**Volume mm**<br>**3**<br>**<350**<br>**Volume mm3 **<br>≥**350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=a~~||
|Table 2. Pb-free Process – Classification Temperatures (Tc)||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6mm<br>260 °C<br>260 °C<br>260 °C<br>1.6mm – 2.5mm<br>260 °C<br>250 °C<br>245 °C<br>≥2.5mm<br>250 °C<br>245 °C<br>245 °C<br>~~—————_—~~||
|**Reliability Test Program**||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000Hrs,100%of VGSmax@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~————~~||
|**Custom er Service**||



## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 



## Links

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- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM2217PSQG)
---

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