# SM1C02NSF, Single MOSFET, N Channel, 120V, TO-220

![Product image](https://novapart.co/image/sinopower:SM1C02NSF_N_CISS:2250/)

**URL**: https://novapart.co/products/SM1C02NSF/sm1c02nsf-single-mosfet-n-channel-120v-to-220
**SKU**: SM1C02NSF
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 120 |
| Package | TO-220 |
| Vgs (±V) | 25 |
| File: Tube | http://www.sinopowersemi.com/Form2/download.aspx?type=5&p=6186 |
| Vth(V) Typ. | 3 |
| Id (A) Ta=25 | 6.6 |
| Id (A) Tc=25 | 50 |
| Rg (Ω) Typ. | 1 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6186 |
| Ciss (Pf) Typ. | 2250 |
| Coss (Pf) Typ. | 230 |
| Crss (Pf) Typ. | 50 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6186 |
| Ron(Mω Max) 10V Max. | 22 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1C02NSF_N_CISS:2250/)

sinopower UN **®** 

**SM1C0 2NSF ®** 

N-Channel Enhancement Mode MOSFET ~~pO~~ 

## **Features** 

## **Pin Description** 

- 120V/50A, 

- RDS(ON)= 22m Ω (max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

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Top View of TO-220 

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## **Applications** 

- High Efficiency Synchronous Rectification in 

- SMPS. 

- Uninterruptible Power Supply. 

- Hard Switched and High Frequency Circuits. 

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## **Ordering and Marking I nform ation** 

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SM1C02NS Package Code<br>    F : TO-220<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>    TU : Tube (50ea/tube)<br>Temperature Range<br>Assembly Material<br>Package Code G : Halogen and Lead Free Device<br>f e<br>SM1C02NS  F : SM1C02N XXXXX - Lot Code<br>XXXXX<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

**SM1C0 2NSF** 

## **®** sinopower VN 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~——————Eee~~|||||
|VDSS<br>~~——————Eee~~<br>~~Rs~~|Drain-Source Voltage<br>~~——————Eee~~<br>||120<br>~~——————Eee~~<br>|V<br>~~——————Eee~~<br>|
|VGSS<br>~~——————Eee~~<br>~~Rs~~|Gate-Source Voltage<br>~~——————Eee~~<br>||±25<br>~~——————Eee~~<br>||
|TJ<br>~~——————Eee~~<br>~~Rsee~~|Maximum Junction Temperature<br>~~——————Eee~~<br>~~ee~~||150<br>~~——————Eee~~<br>~~ee~~|°C<br>~~——————Eee~~<br>~~ee~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~ee~~||
|IS<br>~~a~~<br>~~ee~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~<br>~~a~~|TC=25°C<br>~~ee~~|50<br>~~ee~~|A<br>~~ell~~|
|||TC=100°C<br>~~ee~~<br>~~a~~|31<br>~~ee~~<br>~~a~~||
|IDM<br>a<br>~~ee~~<br>~~a~~|Pulsed Drain Current<br>~~ee ~~<br>~~a~~|TC=25°C<br> ~~ee~~<br>~~ell~~|150<br>~~ee~~<br>~~ell~~||
|PD<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~a~~<br>~~ee~~|TC=25°C<br>~~ell~~|113<br>~~ell~~|W<br>~~ell~~|
|||TC=100°C<br>~~ell~~<br>~~ee~~|45<br>~~ell~~<br>~~ee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ell~~<br>~~a~~||1.1<br>~~ell~~|°C/W<br>~~ell~~|
|ID<br>~~a~~|Continuous Drain Current<br>~~a~~|TA=25°C<br>~~ee~~<br>~~ee~~|6.6<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br>~~eee~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~|5.3<br>~~ee~~<br>~~eee~~||
|PD<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~**e**~~<br>|TA=25°C<br>~~ee ~~<br>~~a~~<br>~~**e**e~~|2<br> ~~eee~~<br>~~a~~<br>~~ee~~|W<br>~~eee~~<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~**e**e~~|1.28<br>~~a~~<br>~~ee~~||
|RθJA<br> <br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~**e**e ~~<br>~~e~~||62.5<br> ~~ee~~|°C/W|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse|L=0.5mH|24|A|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|144|mJ|



Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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**SM1C0 2NSF** 

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## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|~~es~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~es~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~esCe~~<br>~~ee~~||||||||
|BVDSS<br>~~Ce~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~Ce~~<br>~~se~~|VGS=0V, IDS=250µA<br>~~Ce~~<br>~~se~~<br>~~ee~~||120<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|-<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|-<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|V<br>~~Ce~~<br>~~se~~<br>|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=96V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~eea~~||-<br>~~ee~~<br>~~a~~<br>|-<br>~~ee~~<br>~~a~~<br>|1<br>~~ee~~<br>~~a~~<br>|µA<br>~~a~~<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~eea~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|30<br>~~a~~<br>~~a~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~||2<br><br>~~a~~|3<br><br>~~a~~|4<br><br>~~a~~|V<br><br>~~a~~|
|IGSS|Gate Leakage Current|VGS=±25V, VDS=0V<br>~~ee~~||-<br>|-<br>|±100<br>|nA<br>|
|RDS(ON)<br>c <br>~~a~~<br>~~Cn~~|Drain-Source On-state Resistance<br>~~a~~<br>~~Cn~~|VGS=10V, IDS=25A<br>~~a~~||-<br>~~a~~|18<br>~~a~~|22<br>~~a~~|mΩ<br>~~a~~|
|**Diode Characteristics**<br>~~a~~<br>~~Cn~~<br>~~a~~<br>~~es~~||||||||
|VSD<br>c<br>~~Cn~~<br>~~a~~|Diode Forward Voltage<br>~~Cn~~<br>~~es~~|ISD=12A, VG S=0V||-|0.8|1.3|V|
|trr<br>~~a~~<br>~~pf~~|Reverse Recovery Time<br>~~es~~<br>~~pf~~|ISD=12A, dlSD/dt=100A/µs<br>~~pf~~||-<br>~~pf~~|46<br>~~pf~~<br>~~|~~|-<br>~~pf~~<br>~~|ff~~|ns<br>~~pf~~<br>~~ff~~|
|Qrr<br>~~pf~~<br>~~a~~|Reverse Recovery Charge<br>~~pf~~|||-<br>~~pf~~<br>~~|~~|85<br>~~pf~~<br>~~|~~<br>~~|~~|-<br>~~pf~~<br>~~|~~<br>~~|ff~~|nC<br>~~pf~~<br>~~|~~<br>~~ff~~|
|**Dynamic Characteristics**<br>d<br>~~| ff~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz||-<br>~~pt~~|1.0<br>~~pt~~|-<br>~~pt~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz||-<br>~~pt~~|2250<br>~~pt~~|2900<br>~~pt~~|pF|
|Coss<br>~~a~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~pt~~<br>~~ee~~|230<br>~~pt~~<br>~~ee~~|-<br>~~pt~~<br>~~ee~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~|50<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~|-<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~ef~~<br>~~st~~|21<br>~~ee~~<br>~~ef~~<br>~~st~~|38<br>~~ee~~<br>~~ef~~<br>~~st~~|ns|
|tr<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~ef~~<br>~~st~~<br>~~|~~|8<br>~~ef~~<br>~~st~~<br>~~|~~|15<br>~~ef~~<br>~~st~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~st~~<br>~~|~~<br>~~|~~|41<br>~~st~~<br>~~|~~<br>|74<br>~~st~~<br>~~|~~<br>||
|tf<br>~~ee~~<br>~~es~~<br>~~Ce~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~|~~<br>~~|ft~~|20<br>~~|~~<br>~~ft~~|36<br>~~|~~<br>~~ft~~||
|**Gate Charge Characteristics**<br>d<br>~~es ee~~<br>~~|ft~~<br>~~Cea~~<br>~~ee~~<br>~~pf~~||||||||
|Qg<br>~~Cea~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=50V, VGS=10V,<br>IDS=25A<br><br>~~|~~||-<br>~~ft~~<br>~~pf~~<br>~~pt~~|37<br>~~ft~~<br>~~pf~~<br>~~pt~~|52<br>~~ft~~<br>~~pf~~<br>~~pt~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~pf~~<br>~~pt~~<br>~~|~~<br>~~|~~|12<br>~~pf~~<br>~~pt~~<br>~~|~~|-<br>~~pf~~<br>~~pt~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~pt~~<br>~~|~~<br>~~|~~|7<br>~~pt~~<br>~~|~~|-<br>~~pt~~<br>~~|~~||



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## **Typical Operating Characteristics** 

**Power Dissipation** 

**Drain Current** 

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125 60<br>50<br>100<br>40<br>75<br>30<br>50<br>20<br>25<br>10<br>TC=25oC TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>600 2<br>1 Duty = 0.5<br>0.2<br>100<br>0.1<br>100 µ s 0.1 0.05<br>0.02<br>10 = ee<br>0.01<br>0.01<br>1ms<br>10ms<br>1 DC<br>1E-3<br>Single Pulse<br>0.1 TC=25oC 1E-4 R θ JC :1.1oC/W<br>0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1C0 2NSF** 

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## **Typical Operating Characteristics ( Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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100<br>VGS=5.5,6,7,8,9,10V<br>80<br>5V<br>60<br>40<br>4.5V<br>20<br>4V<br>0<br>0 1 2 3 4 5 6<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>60<br>I =25A<br>DS<br>50<br>40<br>30<br>20<br>10<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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40<br>32<br>24<br>V =10V<br>GS<br>16<br>8<br>0<br>0 10 20 30 40 50 60 70<br>ID - Drain Current (A)<br>[a] Gate Threshold Voltage<br>1.6<br>I DS =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

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Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 25A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 = RON@Tj=25oC: 18m Ω<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>3000<br>Frequency=1MHz<br>2500<br>Ciss<br>2000<br>1500<br>1000<br>500<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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200<br>100<br>T =150oC<br>10 j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>9 V DS = 50V<br> I DS = 25A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 8 16 24 32 40<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM1C0 2NSF** 

## **®** sinopower WA. 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>a VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **Package I nform at ion** 

## **TO-220** 

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E A<br>E/2 A1 E1<br>I<br>b e c A2<br>b2<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 - 6.35 - 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>ae<br>Note: Follow JEDEC TO-220 AB.<br>Copyright    Sinopow er Sem iconductor, Inc. 8 ww w.sinopowersem i.com<br>Rev. A.2 - August, 2014<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


sinopower **®** UX 

**SM1C0 2NSF** 

## **Classificat ion Profile** 

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**SM1C0 2NSF** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C Table 2. Pb-free Process – Classification Temperatures (Tc) ~~FE~~ **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~—————~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C 

## **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

_ww w.sinopowersem i.com_ 

10 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 



## Links

- [View this product on Novapart](https://novapart.co/products/SM1C02NSF/sm1c02nsf-single-mosfet-n-channel-120v-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1C02NSF)
---

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