# SM1A23NSD, Single MOSFET, N Channel, 100V, SOT-89

![Product image](https://novapart.co/image/sinopower:SM1A23NSD_N_CISS:740/)

**URL**: https://novapart.co/products/SM1A23NSD/sm1a23nsd-single-mosfet-n-channel-100v-sot-89
**SKU**: SM1A23NSD
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 100 |
| Package | SOT-89 |
| Vgs (±V) | 20 |
| Vth(V) Typ. | 2 |
| Id (A) Ta=25 | 4.2 |
| Rg (Ω) Typ. | 2.5 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6560 |
| Ciss (Pf) Typ. | 740 |
| Coss (Pf) Typ. | 45 |
| Crss (Pf) Typ. | 24 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6560 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6560 |
| Ron(Mω Max) 10V Max. | 100 |
| Ron(Mω Max) 4.5V Max. | 110 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1A23NSD_N_CISS:740/)

**SM1A23NSD** 

## N-Channel Enhancement Mode MOSFET 

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Features Pin Description<br>•  100V/4.2A,<br>         RDS(ON)= 100mΩ(max.) @ VGS= 10V S<br>         RDS(ON)= 110mΩ(max.) @ VGS= 4.5V D<br>G<br>•       Reliable and Rugged<br>•       Lead Free and Green Devices Available<br>Top View SOT-89<br>   (RoHS Compliant)<br>D (2)<br>Applications<br>     Power Management in DC/DC Converter. G (1)<br>     Load Switching.<br>S (3)<br>**----- End of picture text -----**<br>


**•** Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

- Power Management in DC/DC Converter. 

- Load Switching. 

N-Channel MOSFET 

**Ordering and Marking Information** 

SM1A23NS Package Code D : SOT-89 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel (1000ea/reel) Assembly Material ~~S~~ a G : Halogen and Lead Free Device SM1A23 SM1A23NS  D: XXXXX - Lot Code XXXXX_N a ee Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSD** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>|||||
|VDSS<br>~~ee~~|Drain-Source Voltage<br>~~ee~~||100<br>~~ee~~|V<br>~~ee~~<br>|
|VGSS<br>~~ee~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>||±20<br>~~ee~~<br>||
|TJ<br>~~ee~~<br>~~aee~~|Maximum Junction Temperature<br>~~ee~~<br>~~ee~~||150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~a~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~a~~||-55 to 150<br>~~ee~~<br>~~a~~||
|IS<br>~~a~~<br>~~e~~|Diode Continuous Forward Current<br>~~a~~<br>~~ee~~|TA=25°C<br>~~a~~<br>~~ol~~|3<br>~~a~~<br>~~ol~~|A<br>~~a~~<br>~~ol~~|
|ID<br>~~e~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>|TA=25°C<br>~~ol~~<br>~~**e**e~~|4.2<br>~~ol~~<br>~~ee~~|A<br>~~ol~~<br>~~ee~~|
|||TA=70°C<br>~~ol~~<br>~~**e**e~~|3.4<br>~~ol~~<br>~~ee~~||
|IDM<br>a<br>~~e~~<br>~~a~~|Pulsed Drain Current<br>~~ee~~<br>~~e~~|TA=25°C<br>~~ol~~<br>~~**e**e ~~|16<br>~~ol~~<br> ~~ee~~|A<br>~~ol~~<br>~~ee~~|
|PD<br>~~e~~<br>~~i~~|Maximum Power Dissipation<br>~~ee~~|TA=25°C<br>~~ol~~<br>~~a~~|3.5<br>~~ol~~<br>~~ee~~|W<br>~~ol~~<br>~~ee~~|
|||TA=70°C<br>~~a~~|2.2<br>~~ee~~||
|RθJA<br>c<br>~~i~~<br>~~pp~~|Thermal Resistance-Junction to Ambient<br>~~pp~~|t≤10s<br>~~a~~|35<br>~~ee~~<br>~~=~~|°C/W<br>~~ee~~<br>~~=~~|
|||Steady State<br>~~a ~~|70<br>~~=~~<br> ~~ee~~|°C/W<br>~~=~~<br>~~ee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse (L=0.5mH)||7|A|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse (L=0.5mH)||12|mJ|



Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSD** 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~PR~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~PRee~~||||||||
|BVDSS<br>~~ee~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~se~~|VGS=0V, IDS=250µA<br>~~ee~~<br>~~se~~||100<br>~~ee~~<br>~~se~~|-<br>~~ee~~<br>~~se~~|-<br>~~ee~~<br>~~se~~|V<br>~~ee~~<br>~~se~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~re~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~re~~|-<br>~~ee~~<br>~~re~~|-<br>~~ee~~<br>~~re~~|30<br>~~ee~~<br>~~re~~||
|VGS(th)<br>~~a~~<br>~~PR~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>||1<br>|2<br>|3<br>|V<br>|
|IGSS<br>~~PR~~|Gate Leakage Current<br>|VGS=±20V, VDS=0V<br>||-<br>|-<br>|±10<br>|µA<br>|
|RDS(ON)<br>d <br>~~PRee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=10V, IDS=4A<br>~~ee~~||-<br>~~ee~~|80<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=4.5V, IDS=3.5A<br>~~ee~~<br>~~ee~~||~~ee~~<br>~~ee~~|85<br>~~ee~~<br>~~ee~~<br>~~ee~~|110<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~ee~~<br>~~PC~~||||||||
|VSD<br>d<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=3A, VGS=0V||-|0.8|1.3|V|
|trr<br>~~a~~<br>~~a~~|Reverse Recovery Time<br>~~a~~<br>~~ee~~|ISD=3A, dlSD/dt=100A/µs<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~|~~|27<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~tf~~|ns<br>~~ee~~<br>~~|~~<br>~~tf~~|
|Qrr<br>~~a~~|Reverse Recovery Charge<br>~~ee~~|||-<br>~~ee~~<br>~~|~~|36<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~tf~~|nC<br>~~ee~~<br>~~|~~<br>~~tf~~|
|**Dynamic Characteristics**<br>e<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~tf~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~||-<br>~~ee~~<br>~~ff~~|2.5<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~|Ω<br>~~ee~~|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~—~~||-<br>~~ee~~<br>~~ff~~<br>~~—|~~|740<br>~~ee~~<br>~~ff~~<br>~~|~~|960<br>~~ee~~<br>~~ff~~<br>|pF<br>~~ee~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~ff~~<br>~~—|~~<br>~~—|~~|45<br>~~ff~~<br>~~||~~<br>~~|~~|-<br>~~ff~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~|24<br>~~||~~<br>~~|~~|-<br>~~|~~||
|td(ON)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~—~~<br>~~ee~~<br>~~—~~||-<br><br>~~—|~~<br>~~ff~~<br>~~—|~~|11<br>~~|~~<br>~~|~~<br>~~ff~~<br>~~|~~|20<br>~~|~~<br>~~ff~~<br>|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~— |~~<br>~~ff~~<br>~~—|~~<br>~~—|~~|6<br>~~|~~<br>~~ff~~<br>~~|ff~~<br>~~[|~~|11<br>~~ff~~<br>~~ff~~<br>~~[||~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~ff~~<br>~~— |~~<br>~~—|~~|27<br>~~ff~~<br>~~|ff~~<br>~~[|~~|49<br>~~ff~~<br>~~ff~~<br>~~[||~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br><br>~~—|~~<br>~~ft~~|5<br>~~ff~~<br>~~[|~~<br>~~ft~~|10<br>~~ff~~<br>~~[||~~<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~— |~~<br>~~[| |~~<br>~~ee~~<br>~~ft~~<br>~~a~~||||||||
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~ee~~|VDS=30V, VGS=4.5V,<br>IDS=4A<br>~~a~~<br>~~ee~~<br>~~_~~||-<br>~~a~~<br>~~_~~||7.7<br>~~a~~<br>~~[|~~|-<br>~~a~~<br>~~[|~~|nC<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~ee~~<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=4A<br>~~a~~<br>~~ee~~<br>~~_~~<br>~~ee~~<br>~~_~~<br>~~—~~||-<br>~~a~~<br>~~_~~|<br>~~_|~~|16<br>~~a~~<br>~~[|~~<br>~~[|~~|23<br>~~a~~<br>~~[|~~<br>~~[|~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~_~~ |<br>~~_|~~<br>~~—|~~|2.5<br>~~[|~~<br>~~[|~~<br>~~[|~~|-<br>~~[|~~<br>~~[|~~<br>~~[|~~||
|Qgd<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~_ |~~<br>~~—|~~|3<br>~~[|~~<br>~~[|~~|-<br>~~[|~~<br>~~[|~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSD** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25 o C<br>A<br>0.0 a<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>1 300µs<br>1ms<br>10ms<br>0.1 100ms<br>1s<br>DC<br>0.01 TA=25oC<br>0.01 0.1 1 10 100 800<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Drain Current** 

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4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T A =25 o C,V G =10V<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Thermal Transient Impedance** 

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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01 RθJA : 35oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1A23NSD** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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20<br>18<br>16 VGS=3.5,4,5,6,7,8,9,10V<br>14<br>12<br>10<br>8<br>3V<br>6<br>4<br>2<br>2.5V<br>0<br>0 1 2 3 4 5<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>120<br>I =4A<br>DS<br>110<br>100<br>90<br>80<br>70<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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135<br>120<br>105<br>V =4.5V<br>GS<br>90<br>V =10V<br>75 GS<br>60<br>45<br>0 4 8 12 16<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>IDS=250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1A23NSD** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.5<br>VGS = 10V<br> I  = 4A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 80mΩ<br>0.0 =<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>3600<br>Frequency=1MHz<br>3200<br>2800<br>Ciss<br>2400<br>2000<br>1600<br>1200<br>800<br>400<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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Source-Drain Diode Forward<br>20<br>10<br>T =150oC<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>9 V DS = 30V<br> I DS = 8A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **SM1A23NSD** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSD** 

## **Package Information** 

## **SOT-89** 

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**----- Start of picture text -----**<br>
a D — A -T- SEATING PLANE <10 mils<br>— D1 C<br>:<br>|<br>e<br>e1<br>E E1<br>H<br>L<br>**----- End of picture text -----**<br>


B1 B 

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Pe SOT-89 RECOMMENDED LAND PATTERN<br>SYM ee MILLIMETERS INCHES<br>BO<br>SS L MIN. MAX. MIN. MAX. 1.8<br>ee A 1.40 1.60 0.055 0.063<br>B 0.44 0.56 0.017 0.022<br>ee B1 0.36 0.48 ee 0.014 0.019 7 REY<br>C 0.35 0.44 0.014 0.017<br>D 4.40 4.60 0.173 0.181<br>D1 1.62 1.83 0.064 0.072<br>E 2.29 2.60 0.090 0.102<br>1.5<br>E1 2.13 2.29 0.084 0.090<br>eeee ee<br>e 1.50 BSC 0.059 BSC<br>e1 3.00 BSC 0.118 BSC<br>ee<br>H 3.94 4.25 0.155 0.167<br>a UNIT: mm<br>ee L 0.89 1.20 ee 0.035 0.047<br>Note : Follow JEDEC TO-243 AA.<br>3<br>2.375<br>1.2<br>**----- End of picture text -----**<br>


## **RECOMMENDED LAND PATTERN** 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSD** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>© © .<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>Y<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-89**|178.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.404.80±0.20|4.50±0.20|1.80±0.20|



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**SM1A23NSD** 

## **Taping Direction Information** 

## **SOT-89** 

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USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>


## **Classification Profile** 

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## **SM1A23NSD** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~Ss~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

_www.sinopowersemi.com_ 

11 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 



## Links

- [View this product on Novapart](https://novapart.co/products/SM1A23NSD/sm1a23nsd-single-mosfet-n-channel-100v-sot-89)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1A23NSD)
---

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