# SM1A16PSV, Single MOSFET, P Channel, -100V, SOT-223

![Product image](https://novapart.co/image/sinopower:SM1A16PSV_P_CISS:1050/)

**URL**: https://novapart.co/products/SM1A16PSV/sm1a16psv-single-mosfet-p-channel-100v-sot-223
**SKU**: SM1A16PSV
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | P |
| Bv(V) | -100 |
| Package | SOT-223 |
| Vgs (±V) | 20 |
| Id (A) Tc=25 | -2.5 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6537 |
| Ciss (Pf) Typ. | 1050 |
| Coss (Pf) Typ. | 65 |
| Crss (Pf) Typ. | 35 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6537 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6537 |
| Ron(Mω Max) 10V Max. | 205 |
| Ron(Mω Max) 4.5V Max. | 260 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1A16PSV_P_CISS:1050/)

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**SM1A16PSV ®** 

- P-Channel Enhancement Mode MOSFET 

- ~~pO~~ 

## **Features** 

## **Pin Configuration** 

- -100V/-2.5A, 

   - RDS(ON)=205mΩ (max.) @ VGS=-10V 

   - RDS(ON)=260mΩ (max.) @ VGS=-4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

## **Applications** 

- Power Management in Desktop Computer or DC/DC Converters. 

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Top View of SOT-223 

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P-Channel MOSFET 

## **Ordering and Marking Information** 

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SM1A16PS Package Code<br>    V : SOT-223<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>    TR : Tape & Reel  (2500/ea/reel)<br>Temperature Range<br>Assembly Material<br>Package Code     G : Halogen and Lead Free Device<br>SM1A16PS    V :    1A16P XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**®** sinopower N 

## **SM1A16PSV** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~HR~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**(TA=25°C Unless Otherwise Noted)<br>~~HRa~~<br>~~———————————————Ee~~|||||
|VDSS<br>~~———————————————~~|Drain-Source Voltage<br>~~———————————————~~||-100<br>~~Ee~~|V<br>~~Ee~~<br>~~a~~|
|VGSS<br>~~———————————————~~<br>~~a~~|Gate-Source Voltage<br>~~———————————————~~<br>~~a~~<br>~~a~~||±20<br>~~Ee~~<br>~~a~~<br>~~a~~||
|TJ<br>~~———————————————~~<br>~~a~~<br>~~a~~|Maximum Junction Temperature<br>~~——————————————— ~~<br>~~a~~<br>~~a~~<br>~~a~~||150<br> ~~Ee~~<br>~~a~~<br>~~a~~<br>~~a~~|°C<br>~~Ee~~<br>~~a~~|
|TSTG<br>~~a~~<br>~~PR~~|Storage Temperature Range<br>~~a~~<br>~~**a**~~<br>||-55 to 150<br>~~a~~<br>~~**a**~~<br>|°C<br>~~**a**~~<br>|
|IS<br>~~PR~~|Diode Continuous Forward Current<br>~~**a**~~<br>||-3<br>~~**a**~~<br>|A<br>~~**a**~~<br>|
|IDP<br>~~PRee~~|300μs Pulse Drain Current Tested<br>~~**a**~~<br>~~ee~~|TC=25°C<br>~~**a**~~<br>~~ee~~<br>~~a~~|-9.9<br>~~**a**~~<br>~~ee~~<br>~~ee~~|A<br>~~**a**~~<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~a~~|-6.2<br>~~ee~~<br>~~ee~~||
|ID<br>~~es~~|Continuous Drain Current<br>~~es~~|TC=25°C<br>~~a~~<br>~~es~~|-2.5*<br>~~ee~~<br>~~es~~|A<br>~~es~~<br>~~a~~<br>~~eee~~|
|||TC=100°C<br>~~es~~<br>~~a~~<br>~~ee~~|-1.6<br>~~es~~<br>~~a~~<br>~~eee~~||
|PD<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TC=25°C<br>~~a~~<br>~~ee~~|25<br>~~a~~<br>~~eee~~|W<br>~~a~~<br>~~eee~~|
|||TC=100°C<br>~~a~~<br>~~ee~~<br>~~a~~|1.0<br>~~a~~<br>~~eee~~<br>~~a~~||
|RθJA<br>~~Pe~~|Thermal Resistance-Junction to Ambient<br>~~Pe~~|t≤10s<br>~~ee ~~<br>~~Pe~~<br>~~ee~~|50<br> ~~eee~~<br>~~Pe~~<br>~~ee~~|°C/W<br>~~eee~~<br>~~Pe~~<br>~~ee~~|
|||Steady state<br>~~Pe~~<br>~~ee~~|75<br>~~Pe~~<br>~~ee~~|°C/W<br>~~Pe~~<br>~~ee~~|



|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~eee|tT~~|**Test Conditions**<br>~~ee~~<br>~~eee|tT~~|**SM1A16PV**<br>~~ee~~<br>~~|~~|**SM1A16PV**<br>~~ee~~<br>~~|~~|**SM1A16PV**<br>~~ee~~<br>~~|~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|||||**Min.**<br>~~ee~~<br>~~|tT~~|**Typ.**<br>~~ee~~<br>~~tT~~|**Max.**<br>~~ee~~<br>~~tT~~||
|**Static Characteristics**<br>~~eee |~~<br>~~ee~~<br>~~a~~<br>~~ee~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, IDS=-250µA||-100|-|-|V|
|IDSS<br>~~a~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~ee~~|VDS=-80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|ft~~|-1<br>~~ee~~<br>~~ft~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~ee~~<br>~~|~~<br>~~|ft~~|-30<br>~~ee~~<br>~~|~~<br>~~ft~~||
|VGS(th)<br>~~RG~~|Gate Threshold Voltage<br>~~RG~~|VDS=VGS,IDS=-250µA<br>~~RG~~||-1<br>~~|~~<br>~~RG~~|-<br>~~| ft~~<br>~~RG~~|-3<br>~~ft~~<br>~~RG~~|V<br>~~RG~~|
|IGSS<br>~~a~~|Gate Leakage Current<br>~~a~~|VGS=±16V, VDS=0V<br>~~a~~<br>~~ee~~||-<br>~~a~~|-<br>~~a~~<br>~~el~~|±10<br>~~a~~<br>~~el~~|µA<br>~~a~~<br>~~el~~|
|RDS(ON)<br>a <br>~~a~~|Drain-Source On-state Resistance<br>~~a~~|VGS=-10V, IDS=-2.5A<br>~~a~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~el~~<br>~~ee~~|205<br>~~a~~<br>~~el~~<br>~~ee~~|mΩ<br>~~a~~<br>~~el~~|
|||VGS=-4.5V, IDS=-1.6A<br>~~a~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~a~~<br>~~el~~<br>~~ee~~<br>~~ee~~|260<br>~~a~~<br>~~el~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~el~~<br>~~ee ee~~||||||||
|VSD<br>a<br>~~a~~|Diode Forward Voltage|ISD=-1A, VGS=0V||-|-0.75|-1.1|V|
|trr<br>~~a~~|Reverse RecoveryTime<br>~~ee~~|IDS=-2.5A,<br>dlSD/dt=100A/µs<br>~~|~~||-<br>~~|~~<br>~~**|**~~|30|-|ns|
|Qrr<br>~~a~~|Reverse RecoveryCharge<br>~~ee~~|||-<br>~~|~~<br>~~**|**~~|33|-|nC|



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## **SM1A16PSV** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~—~~|**SM1A16PV**<br>~~e~~<br>~~—~~<br>~~|~~|**SM1A16PV**<br>~~e~~<br>~~—~~<br>~~|~~|**SM1A16PV**<br>~~e~~<br>~~—~~<br>~~|~~|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**<br>~~e~~<br>~~—~~<br>~~|~~|**Typ.**|**Max.**||
|**Dynamic Characteristics**b<br>~~eeee~~<br>~~—~~<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~||~~<br>~~re~~|||||||
|Ciss<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~re~~<br>~~ee~~|Input Capacitance<br>~~ee ~~<br>~~a~~<br>~~ee~~|VGS=0V,<br>VDS=-30V,<br>Frequency=1.0MHz<br> ~~ee~~<br>~~a~~|-<br>~~e~~<br>~~a~~<br>~~|~~<br>~~|}~~|1050<br>~~a~~<br>~~|~~<br>~~|~~<br>~~|}~~|-<br>~~a~~<br>~~|~~<br>~~||~~<br>~~|}~~|pF<br>~~a~~<br>~~|~~|
|Coss<br>~~ee~~<br>~~re~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|}~~<br>~~|}~~|65<br>~~|~~<br>~~|~~<br>~~|}~~<br>~~|}~~|-<br>~~|~~<br>~~||~~<br>~~|}~~<br>~~|}~~||
|Crss<br>~~re~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|}~~<br>~~|}~~|35<br>~~|~~<br>~~|}~~<br>~~|}~~|-<br>~~| |~~<br>~~|}~~<br>~~|}~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=-30V, RL=30Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~—~~|-<br>~~|}~~<br>~~|}~~<br>~~ff}~~<br>|10<br>~~|}~~<br>~~|}~~<br>~~ff}~~<br>|-<br>~~|}~~<br>~~|}~~<br>~~ff}~~<br>~~|~~|ns<br>~~|~~<br>~~|~~|
|tr<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~**ee**~~||-<br>~~|}~~<br>~~ff}~~<br>~~|}~~<br>~~—~~~~**|**~~|5<br>~~|}~~<br>~~ff}~~<br>~~|}~~|-<br>~~|}~~<br>~~ff}~~<br>~~|}|~~||
|td(OFF)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-off Delay Time<br>~~**ee**~~||-<br>~~ff}~~<br>~~|}~~<br>~~—~~~~**|**~~<br>~~|~~|68<br>~~ff}~~<br>~~|}~~<br>~~|~~<br>~~ft~~|-<br>~~ff}~~<br>~~|}|~~<br>~~|~~<br>~~ft|~~||
|tf<br>~~es~~<br>~~ee~~|Turn-off Fall Time<br>~~**ee**~~||-<br><br>~~—~~~~**|**~~<br>~~|~~|58<br><br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~|~~<br>~~ft|~~||
|**Gate Charge Characteristics**b<br>~~**ee**~~<br>~~— ~~~~**|**~~<br>~~ee~~<br>~~|~~<br>~~ft |~~<br>~~a~~<br>~~ee~~<br>~~—~~<br>~~|~~<br>~~|~~|||||||
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=-50V, VGS=-10V,<br>IDS=-2.5A<br>~~—~~<br>~~ee~~<br>~~—~~<br>~~—~~|-<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|20<br>~~|~~<br>~~|~~|-|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|3.3<br>~~|~~<br>~~|~~<br>~~|~~|-||
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~—~~<br>~~|~~|3.3<br>~~|~~<br>~~|~~|-||



Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. 

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## **SM1A16PSV** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

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Power Dissipation<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25oC<br>C<br>0.0 a<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC)<br>Safe Operation Area<br>50<br>10<br>1<br>300µs<br>1ms<br>10ms<br>100ms<br>0.1<br>1s<br>DC<br>0.01 TC=25oC<br>0.1 1 10 100 400<br>-VDS - Drain-Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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Drain Current<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>TC=25oC,VG=-10V<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC)<br>Thermal Transient Impedance<br>2<br>1<br>Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01 RθJA :50oC/W<br>1E-4 1E-3 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (sec)<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**®** 

## **SM1A16PSV** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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10<br>8 VGS=-4,-5,-6,-7,-8,-9,-10V<br>6<br>-3V<br>/<br>4<br>2<br>-2.5V<br>0<br>0 1 2 3 4 5<br>-VDS - Drain-Source Voltage (V)<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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240<br>220<br>V =-4.5V<br>200 GS<br>180<br>V =-10V<br>GS<br>160<br>140<br>120<br>0 2 4 6 8 10<br>-ID - Drain Current (A)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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400<br>I =-2.5A<br>DS<br>350<br>300<br>250<br>200<br>150<br>100<br>2 3 4 5 6 7 8 9 10<br>-VGS - Gate-Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate Threshold Voltage** 

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1.6<br>I DS =-250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (oC)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**®** 

## **SM1A16PSV** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>2.5 10<br>V  = -10V<br>GS<br> I  = -2.5A<br>DS<br>2.0<br>T =150oC<br>j<br>1.5<br>T =25oC<br>1 j<br>1.0<br>0.5<br>0.0 _ RON@Tj=25oC: 165mΩ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (oC) -VSD - Source-Drain Voltage (V)<br>Capacitance Gate Charge<br>1400 10<br>Frequency=1MHz V = -50V<br>DS<br>9<br> I = -2.5A<br>1200 DS<br>Ciss 8<br>1000<br>7<br>6<br>800<br>5<br>600<br>4<br>400 3<br>2<br>200<br>Crss Coss 1<br>0 . 0<br>0 8 16 24 32 40 0 4 8 12 16 20<br>-VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br>- Source Current (A)<br>S<br>-I<br>Normalized On Resistance<br>C - Capacitance (nC) - Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WA 

## **SM1A16PSV** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


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**®** sinopower VN 

## **SM1A16PSV** 

## **Package Information** 

## **SOT-223** 

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D<br>b2<br>|<br>P<br>SEE<br>| VIEW A<br>| |<br>Aa |<br>os<br>| | |<br>e c<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>LJ | a) :<br>VIEW A<br>pT SOT-223 RECOMMENDED LAND PATTERN<br>SYM a MILLIMETERS INCHES 3.1<br>BO<br>L MIN. MAX. MIN. MAX.<br>| AA1 0.02 1.800.10 0.001 0.0710.004 KXX X KK<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>a<br>A b2 2.90 3.10 0.114 0.122<br>A c 0.23 0.33 0.009 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>a E 6.70 7.30 0.264 0.287<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>A L 0 0.750° 10° 0.0300° 10° 0.81 2.3<br>a<br>Note : 1. Follow from JEDEC TO-261 AA.<br>           2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br>               of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br>               and interlead flash, but including any mismatch between the top<br>               and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>


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ver **®** 

**SM1A16PSV** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

**®** sinopower VN 

## **SM1A16PSV** 

## **Taping Direction Information** 

## **SOT-223** 

## USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

10 

**®** 

## **SM1A16PSV** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=sSS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/SM1A16PSV/sm1a16psv-single-mosfet-p-channel-100v-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1A16PSV)
---

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