# SM1A02NSF, Single MOSFET, N Channel, 100V, TO-220

![Product image](https://novapart.co/image/sinopower:SM1A02NSF_N_CISS:5400/)

**URL**: https://novapart.co/products/SM1A02NSF/sm1a02nsf-single-mosfet-n-channel-100v-to-220
**SKU**: SM1A02NSF
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | N |
| Bv(V) | 100 |
| Package | TO-220 |
| Vgs (±V) | 25 |
| File: Tube | http://www.sinopowersemi.com/Form2/download.aspx?type=5&p=6180 |
| Vth(V) Typ. | 3 |
| Id (A) Ta=25 | 11 |
| Id (A) Tc=25 | 130 |
| Rg (Ω) Typ. | 1.2 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6180 |
| Ciss (Pf) Typ. | 5400 |
| Coss (Pf) Typ. | 720 |
| Crss (Pf) Typ. | 215 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6180 |
| Ron(Mω Max) 10V Max. | 7.2 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1A02NSF_N_CISS:5400/)

sinopower VX **®** 

**SM1A02NSF ®** 

**Ordering and Marking Information** 

N-Channel Enhancement Mode MOSFET ~~oo~~ 

## **Features** 

## **Pin Description** 

- 100V/130A, 

- RDS(ON)= 7.2mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

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Top View of TO-220 

D 

## **Applications** 

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- Synchronous Rectification 

- Power Management in Inverter Systems 

- Motor Driver 

S N-Channel MOSFET 

SM1A02NS Package Code F : TO-220 Assembly Material Operating Junction Temperature Range C : -55  to 150[o] C Handling Code Handling Code TU : Tube (50ea/tube) Temperature Range Assembly Material Package Code G : Halogen and Lead Free Device ~~E~~ e, SM1A02NS  F : SM1A02N XXXXX - Lot Code XXXXX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

**®** sinopower WN 

**SM1A02NSF** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)|||||
|VDSS<br>~~**a**~~|Drain-Source Voltage<br>~~**a**~~||100<br>~~**a**~~|V<br>~~**a**~~<br>~~ee~~<br>~~——————————————EEee~~|
|VGSS<br>~~**a**~~<br>~~——————————————EEee~~|Gate-Source Voltage<br>~~**a**~~<br>~~ee~~<br>~~——————————————EEee~~||±25<br>~~**a**~~<br>~~ee~~<br>~~——————————————EEee~~||
|TJ<br>~~——————————————EEee~~|Maximum Junction Temperature<br>~~——————————————EEee~~||150<br>~~——————————————EEee~~|°C<br>~~——————————————EEee~~<br>~~ee~~|
|TSTG<br>~~——————————————EEee~~<br>~~a ee~~|Storage Temperature Range<br>~~——————————————EEee~~<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~——————————————EEee~~<br>~~ee~~||
|IS<br>~~——————————————EEee~~<br>~~a ee~~<br>~~a ee~~<br>~~——_———EE~~|Diode Continuous Forward Current<br>~~——————————————EEee~~<br>~~ee~~<br>~~ee~~<br>~~——_———EE~~|TC=25°C<br>~~——————————————EEee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~——_———EE~~|80<br>~~——————————————EEee~~<br>~~ee~~<br>~~ee~~|A<br>~~——————————————EEee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~eee~~|
|ID<br>~~——_———EE~~|Continuous Drain Current(Silicon Limited)<br>~~——_———EE~~|TC=25°C<br>~~ee~~<br>~~——_———EE~~|130<br>a||
||Continuous Drain Current(Wire Bond Limited)<br>~~——_———EE~~<br>~~ee~~|TC=25°C<br>~~——_———EE~~<br>~~ee~~|120<br>a<br>~~ee~~||
|IDM<br>~~——_———EE~~<br>~~a~~|Pulsed Drain Current<br>~~——_———EE~~<br>|TC=25°C<br>~~——_———EE~~<br><br>~~ee~~|400<br>b<br><br>~~eee~~||
|PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~ee~~<br>~~**e**e~~|250<br>~~ee~~<br>~~eee~~<br>~~ee~~|W<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~ee~~<br>~~**e**e~~<br>~~see~~|100<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~see~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~e~~|Steady State<br>~~ee ~~<br>~~**e**e ~~<br>~~see~~|0.5<br> ~~eee~~<br> ~~ee~~<br>~~see~~|°C/W<br>~~eee~~<br>~~ee~~|
|ID<br>~~ef~~|Continuous Drain Current<br>~~ef~~|TA=25°C<br>~~see~~<br>~~ef~~<br>~~ee~~|11<br>~~see~~<br>~~ef~~<br>~~ee~~|A<br>~~ef~~<br>~~ee~~<br>~~ee~~|
|||TA=70°C<br>~~ef~~<br>~~ee~~<br>~~ee~~|9<br>~~ef~~<br>~~ee~~<br>~~ee~~||
|PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>|TA=25°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~**e**e~~|1.25<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~||
|RθJA<br>~~a ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>|Steady State<br>~~ee ~~<br>~~ee~~<br>~~**e**e~~|62.5<br> ~~ee~~<br>~~ee~~<br>~~ee~~|°C/W<br>~~ee~~<br>~~ee~~|
|IAS<br>c<br>~~a e~~|Avalanche Current, Single pulse (L=0.5mH)<br>~~**e**e~~<br>~~e~~||45<br>~~ee~~|A|
|EAS<br>c<br>~~a~~|Avalanche Energy, Single pulse (L=0.5mH)||500|mJ|



Note a：Bond wire current limit is 120A. 

Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~es~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~<br>~~rs~~|**Test Conditions**<br>~~es~~<br>~~rs~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~eses~~<br>~~rs~~<br>~~ee~~<br>~~eses~~<br>~~es~~~~**e**ss~~~~**e**~~<br>~~ee~~||||||||
|BVDSS<br>~~es~~<br>~~ee~~|Drain-Source Breakdown Voltage<br>~~es~~<br>~~ee~~|VGS=0V, IDS=250µA<br>~~es~~<br>~~es~~||100<br>~~es~~<br>~~**e**s~~|-<br>~~es~~<br>~~s~~|-<br>~~es~~<br>~~s~~~~**e**~~|V<br>~~es~~|
|IDSS<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~De~~|Zero Gate Voltage Drain Current<br>~~es~~<br>~~ee~~<br><br>|VDS=80V, VGS=0V<br>TJ=85°C<br>~~es~~<br>~~es~~<br>~~eFE~~<br><br>~~es~~<br>||-<br>~~es~~<br>~~**e**s~~<br>~~e~~|-<br>~~es~~<br>~~s~~<br>|1<br>~~es~~<br>~~s~~~~**e**~~<br>|µA<br>~~es~~<br><br>|
||||TJ=85°C<br>~~es~~<br>~~eFE~~<br><br>~~es~~<br>|-<br>~~**e**s~~<br>~~eFE~~<br><br>~~eG~~<br>|-<br>~~s~~<br>~~FE~~<br><br>~~eG~~<br>|30<br>~~s~~~~**e**~~<br>~~FE~~<br><br>||
|VGS(th)<br>~~ee~~<br>~~es~~<br>~~De~~|Gate Threshold Voltage<br>~~ee~~<br>~~es~~<br>|VDS=VGS, IDS=250µA<br>~~es ~~<br>~~FE~~<br>~~es~~<br>~~es~~<br>||2<br> ~~**e**s ~~<br>~~FE~~<br>~~es~~<br>~~eG~~<br>|3<br> ~~s~~<br>~~FE~~<br>~~es~~<br>~~eG~~<br>|4<br>~~s~~~~**e**~~<br>~~FE~~<br>~~es~~<br>|V<br>~~es~~<br>|
|IGSS<br>~~es~~<br>~~De~~<br>~~es~~|Gate Leakage Current<br><br>~~Oe~~<br>|VGS=±25V, VDS=0V<br>~~FE~~<br><br>~~es~~<br>~~Oe~~<br><br>~~es~~||-<br>~~FE~~<br><br>~~eG~~<br>~~Oe~~<br><br>~~es~~|-<br>~~FE~~<br><br>~~eG~~<br>~~Oe~~<br><br>~~es~~|±100<br>~~FE~~<br><br>~~Oe~~<br>|nA<br><br>~~Oe~~<br>|
|RDS(ON)<br>d<br>~~De~~<br>~~es~~|Drain-Source On-state Resistance<br>~~Oe~~<br>~~es~~|VGS=10V, IDS=40A<br>~~es ~~<br>~~Oe~~<br>~~es~~<br>~~es~~||-<br> ~~eG~~<br>~~Oe~~<br>~~es~~<br>~~es~~|6<br>~~eG~~<br>~~Oe~~<br>~~es~~<br>~~es~~|7.2<br>~~Oe~~<br>~~es~~|mΩ<br>~~Oe~~<br>~~es~~|



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**®** sinopower N 

## **SM1A02NSF** 

## **Electrical Characteristics (Cont.)** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Diode Characteristics**<br>~~a~~|||||||
|VSD<br>d<br>~~a~~<br>~~Sn~~<br>~~rs~~|Diode Forward Voltage<br>~~ee~~<br>~~eee~~|ISD=20A, VG S=0V<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~i~~|0.8<br>~~ee~~<br>~~i~~|1.3<br>~~ee~~<br>~~i~~|V<br>~~ee~~<br>~~i~~|
|trr<br>~~a~~<br>~~Sn~~<br>~~rs~~|Reverse Recovery Time<br>~~ee~~<br>~~eee~~|ISD=40A, dlSD/dt=100A/µs<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~i~~|65<br>~~ee~~<br>~~i~~|-<br>~~ee~~<br>~~i~~|ns<br>~~ee~~<br>~~i~~|
|Qrr<br><br>~~Sn~~<br>~~rs~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~||**-**<br>~~ee~~<br>~~i~~|180<br>~~ee~~<br>~~i~~|-<br>~~ee~~<br>~~i~~|nC<br>~~ee~~<br>~~i~~|
|**Dynamic Characteristics**<br>e<br>~~ee~~<br>~~Sn~~<br>~~eee~~<br>~~rs~~<br>~~i~~|||||||
|RG<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,f=1MHz|-|1.2|-|Ω|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz|-<br>~~pT~~<br>~~ae~~|5400<br>~~pT~~<br>~~ae~~|7000<br>~~pT~~<br>~~ae~~|pF|
|Coss<br>~~a~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~ae~~<br>~~po~~|720<br>~~ae~~<br>~~po~~|-<br>~~ae~~<br>~~po~~||
|Crss<br>~~a~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~ae~~<br>~~po~~|215<br>~~ae~~<br>~~po~~|-<br>~~ae~~<br>~~po~~||
|td(ON)<br>~~es~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω|-<br>~~po~~<br>~~pT~~|27<br>~~po~~<br>~~pT~~|49<br>~~po~~<br>~~pT~~|ns|
|Tr<br>~~a~~|Turn-on Rise Time||-<br>~~PT~~|15<br>~~PT~~|27<br>~~PT~~||
|td(OFF)<br>~~a~~|Turn-off Delay Time||-<br>~~PT~~|83<br>~~PT~~|150<br>~~PT~~||
|Tf<br>~~a~~|Turn-off Fall Time||-<br>~~ft~~|63<br>~~ft~~|113<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~a~~<br>~~ft~~|||||||
|Qg<br>~~a~~|Total Gate Charge|VDS=50V, VGS=10V,<br>IDS=40A|-<br>~~P|~~|100<br>~~P|~~|140<br>~~P|~~|nC|
|Qgs<br>~~a~~<br>~~re~~|Gate-Source Charge||-<br>~~pT~~<br>~~Pe~~|27<br>~~pT~~<br>~~Pe~~|-<br>~~pT~~<br>~~Pe~~||
|Qgd<br>~~re~~|Gate-Drain Charge||-<br>~~Pe~~|27<br>~~Pe~~|-<br>~~Pe~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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**®** 

## **SM1A02NSF** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

**Drain Current** 

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300 140<br>120<br>250<br>100<br>200<br>80<br>150<br>60<br>100<br>40<br>50<br>20<br>TC=25oC TC=25 o C,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>800 2<br>1 Duty = 0.5<br>0.2<br>100 0.1<br>0.1<br>0.05<br>100µs<br>0.02<br>0.01<br>10 1ms 0.01<br>10ms<br>DC<br>Single Pulse<br>1E-3<br>1 TC=25oC 5E-4 RθJC :0.5oC/W<br>0.01 0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1<br> VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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**®** 

## **SM1A02NSF** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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200<br>V GS =6,7,8,9,10V<br>175<br>5.5V<br>150<br>125<br>100<br>75 5V<br>50<br>25<br>4.5V<br>0<br>0 1 2 3 4 5<br> VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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30<br>I =40A<br>DS<br>25<br>20<br>15<br>10<br>5<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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14<br>12<br>10<br>8<br>V =10V<br>GS<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200<br>ID - Drain Current (A)<br>[_] Gate Threshold Voltage<br>1.6<br>I DS  =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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**SM1A02NSF** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

**Drain-Source On Resistance** 

**Source-Drain Diode Forward** 

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2.2<br>V  = 10V<br>GS<br>2.0  I DS  = 40A<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 i R ON @T j =25 o C: 6mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>9000<br>Frequency=1MHz<br>8000<br>7000<br>6000<br>Ciss<br>5000<br>4000<br>3000<br>2000<br>Coss<br>1000<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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200<br>100<br>T =150oC<br>10 j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 50V<br>9 DS<br> I = 40A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** 

## **SM1A02NSF** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>O c= = -— S| SS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>y i =<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**®** 

## **SM1A02NSF** 

## **Package Information** 

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TO-220<br>**----- End of picture text -----**<br>


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E A<br>E/2 A1 E1<br>l<br>b e c A2<br>b2<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 - 6.35 - 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>=~<br>Note: Follow JEDEC TO-220 AB.<br>Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com<br>Rev. A.2 - May, 2014<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**®** sinopower Vv 

**SM1A02NSF** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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**®** 

## **SM1A02NSF** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=S==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~————=——~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S————————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

_www.sinopowersemi.com_ 

10 



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- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1A02NSF)
---

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