# SM1660DSCS, Dual MOSFET, N Channel, 60V, SOT-363

![Product image](https://novapart.co/image/sinopower:SM1660DSCS_DUALN_CISS:24/)

**URL**: https://novapart.co/products/SM1660DSCS/sm1660dscs-dual-mosfet-n-channel-60v-sot-363
**SKU**: SM1660DSCS
**Reference SKUs**: 2N7002BKS
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | Dual N |
| Bv(V) | 60 |
| Package | SOT-363 |
| Vgs (±V) | 20 |
| Vth(V) Typ. | 2 |
| Id (A) Ta=25 | 0.26 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6542 |
| Ciss (Pf) Typ. | 24 |
| Coss (Pf) Typ. | 5.5 |
| Crss (Pf) Typ. | 2.5 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6542 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6542 |
| Ron(Mω Max) 10V Max. | 2200 |
| Ron(Mω Max) 4.5V Max. | 2600 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1660DSCS_DUALN_CISS:24/)

sinopower **®** UA 

## **SM1660DSCSC** 

Dual N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- ⚫ **Dual N** 

60V/0.26A 

RDS(ON) = 2.2 Ω (max.)@VGS = 10V 

RDS(ON) = 2.6 Ω (max.)@VGS = 4.5V 

ESD Protection 

- ⚫ Reliable and Rugged 

- ⚫ Lead Free and Green Devices Available (RoHS Compliant) 

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**----- Start of picture text -----**<br>
SOT-363<br>**----- End of picture text -----**<br>


- ⚫ Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) 

## **Applications** 

- ⚫ Load switch. 

- ⚫ High-speed line driver. 

- ⚫ Switching circuits. 

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**----- Start of picture text -----**<br>
N Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

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**----- Start of picture text -----**<br>
SM1660DS OO0-OU SM1660DS CS<br>**----- End of picture text -----**<br>


Package Code - CS ： SOT-363 Handling Code - TR ： Tape and Reel Operating Junction Temperature Range - C ： -55 to 150 ° C Assembly Material - G ： Halogen and Lead Free Device 

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J- STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright © sinopower Semiconductor Inc.                                                                           1 www.sinopowersemi.com Rev. A.7 – December, 2025 

**®** sinopower vw 

**SM1660DSCSC** 

## **Absolute Maximum Ratings** (TA=25°C Unless Otherwise Noted) 

|||~~es~~|~~ee~~||
|---|---|---|---|---|
|**Symbol**<br>~~a es~~|**Parameter**<br>~~es~~|**Condition**<br>~~es~~<br>~~es~~|**Dual N**<br>~~es~~<br>~~ee~~|**Unit**<br>~~es~~|
|VDSS<br>~~ee~~|Drain-Source Voltage|TA=25°C<br>~~es~~<br>~~|~~<br>~~es~~|60<br>~~ee~~<br>~~|~~|V|
|VGSS<br>~~ee~~<br>~~ee~~|Gate-Source Voltage<br>~~ee~~||±20<br>~~|~~<br>~~—~~||
|TJ<br>~~ee~~<br>~~ee~~<br>~~a~~|Maximum Junction Temperature<br>~~ee~~<br>~~ee~~||150<br>~~|~~<br>~~—~~<br>~~|~~|°C<br>~~7~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~—~~<br>~~|~~<br>||
|IS<br>~~a~~<br>~~a es~~|Diode Continuous Forward Current<br>~~ee~~<br>~~es~~|TC=25°C<br>~~|~~<br>~~es~~<br>~~es~~|0.1<br>~~|~~<br>~~es~~<br>|A<br>~~7~~|
|ID|Continuous Drain Current|TA=25°C<br>~~es~~|0.26<br>||
|||TA=70°C<br>~~es~~|0.21<br>||
|IDMa<br>~~pf~~|Pulse Drain Current<br>~~pf~~|TA=25°C<br>~~es ~~<br>~~pf~~<br>~~eee~~|1<br><br>~~pf~~||
|PD<br>~~pf~~<br>~~ee~~<br>~~ee~~|Maximum Power Dissipation<br>~~pf~~<br>~~ee~~<br>~~es~~||0.25<br> <br>~~pf~~<br>~~eee~~|W<br> ~~7~~<br>~~eee~~<br>~~es~~|
|||TA=70°C<br>~~eee~~<br>~~es~~<br>~~ee~~|0.16<br>~~eee~~<br>~~es~~<br>~~ee~~||
|RθJAb<br>~~ee~~<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~ee ~~<br>~~es~~|Steady State<br> ~~eee~~<br>~~es~~<br>~~ee~~|500<br>~~eee~~<br>~~es~~<br>~~ee~~|°C/W<br>~~eee~~<br>~~es~~|



Copyright © sinopower Semiconductor Inc.                                                                           2 www.sinopowersemi.com Rev. A.7 – December, 2025 

**®** sinopower WN 

**SM1660DSCSC** 

## **Dual N Electrical Characteristics** (TA=25°C Unless Otherwise Noted) 

|**Symbol**<br>~~es~~|**Parameter**<br>~~a~~|**Test Conditions**|**Min.**|**Typ.**|**Max. Unit**|**Max. Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~esa~~<br>~~a~~<br>~~ee eeee~~|||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown<br>Voltage<br>~~ee ee~~|VGS=0V, IDS=250µA<br>~~ee~~<br>~~ee~~|60<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|IDSS<br>~~a~~<br>~~ee~~<br>~~Pe~~|Zero Gate Voltage Drain<br>Current<br>~~ee ee~~<br>~~ee~~<br>|VDS=48V, VGS=0V<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>|-<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|µA<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|
|||VDS=48V, VGS=0V, TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|30<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||
|VGS(th)<br>~~Pe~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>~~ee~~<br>|1<br>~~ee~~<br>|2<br>~~ee~~<br>|2.5<br>~~ee~~<br>|V<br>~~ee~~<br>|
|IGSS<br>~~Peee~~|Gate Leakage Current<br>~~ee~~|VGS=±20V, VDS=0V<br>~~ee~~|-<br>~~ee ~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~|±10<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
|RDS(ON)c<br>~~ee~~|Drain-Source On-state<br>Resistance<br>~~ee~~|VGS=10V, IDS=100mA<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|1.8<br>~~ee~~<br>~~ee~~|2.2<br>~~ee~~<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=50mA<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.6<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee ee~~<br>~~ReeG~~|||||||
|VSDc<br>~~Re~~|Diode Forward Voltage<br>~~eG~~|ISD=100mA, VGS=0V<br>~~eG~~|-<br>~~eG~~|0.8<br>~~eG~~|1.3<br>~~eG~~|V<br>~~eG~~|
|trrd<br>~~Re~~<br>~~per~~<br>~~re~~|Reverse Recovery Time<br>~~eG~~<br>~~per~~<br>~~ee~~|ISD=1A, dlSD/dt=100A/µs<br>~~eG~~<br>~~per~~<br>~~ee~~|-<br>~~eG~~<br>~~per~~<br>~~P|~~|13<br>~~eG~~<br>~~per~~<br>~~P|~~|-<br>~~eG~~<br>~~per~~<br>~~P|~~|ns<br>~~eG~~<br>~~per~~<br>~~P|~~|
|Qrrd<br>~~per~~<br>~~re~~|Reverse Recovery Charge<br>~~per~~<br>~~ee~~||-<br>~~per~~<br>~~P|~~|8<br>~~per~~<br>~~P|~~|-<br>~~per~~<br>~~P|~~|nC<br>~~per~~<br>~~P|~~|
|**Dynamic Characteristicsed**<br>~~per~~<br>~~re~~<br>~~ee~~<br>~~P|~~<br>~~ee~~<br>~~ee~~<br>~~||~~|||||||
|Ciss<br>~~ee~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~||~~<br>~~P|~~|24<br>~~P|~~|32<br>~~P|~~|pF|
|Coss<br>~~ee~~<br>~~a~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~| |~~<br>~~P|~~<br>~~||~~|5.5<br>~~P|~~|-<br>~~P|~~||
|Crss<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~P|~~<br>~~||~~<br>~~||~~|2.5<br>~~P|~~|-<br>~~P|~~||
|td(ON)<br>~~es~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=30V,RL=300Ω,<br>IDS=0.1A,VGEN=10V,RG=6Ω<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~||~~<br>~~P|~~|3<br>~~P|~~|6<br>~~P|~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~||-<br>~~| |~~<br>~~P|~~<br>~~||~~|7<br>~~P|~~|13<br>~~P|~~||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~||-<br>~~P|~~<br>~~||~~<br>~~||~~|10<br>~~P|~~|18<br>~~P|~~||
|tf<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~| |~~<br>~~||~~|12|22||
|**Gate Charge Characteristicsd**<br>~~a~~<br>~~| |~~<br>~~ee~~<br>~~ee~~<br>~~||~~|||||||
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=30V, VGS=10V, IDS=1A<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~||~~<br>~~P|~~|1.6<br>~~P|~~|2.3<br>~~P|~~|nC|
|Qgs<br>~~ee~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~| |~~<br>~~P|~~<br>~~||~~|0.6<br>~~P|~~|-<br>~~P|~~||
|Qgd<br>~~a~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~||-<br>~~P|~~<br>~~||~~|0.1<br>~~P|~~|-<br>~~P|~~||



Copyright © sinopower Semiconductor Inc.                                                                           3 www.sinopowersemi.com Rev. A.7 – December, 2025 

## **SM1660DSCSC** ~~**e** ee~~ errr errr eeee e eee e **e** ~~ee~~ **Dual N Typical Operating Characteristics** 

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®<br>**----- End of picture text -----**<br>


## **Power Dissipation** 

## **Drain Current** 

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**----- Start of picture text -----**<br>
0.15 \\<br>0.05 \<br>0.00<br>0 20 40 60 80 100 120 140<br>TA - Case Temperature ( ° C)<br> - Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.15 S\<br>0.05 |— |<br>0.00 V,=10V<br>0 20 40 60 80 100 120 140<br>TA - Case Temperature ( ° C)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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**----- Start of picture text -----**<br>
VANEa<br>ERNE NN Ste<br>Siti es . Satietoms<br>HH<br>toms<br>ENN<br>a a<br>rtd<br>| a<br>1E-3 T,=25°C<br>0.1 1 10 100<br>VDS - Drain-Source Voltage (V)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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Normalized Thermal Resistance<br>**----- End of picture text -----**<br>


**Square Wave Pulse Duration (sec)** 

Copyright © sinopower Semiconductor Inc.                                                                           4 www.sinopowersemi.com Rev. A.7 – December, 2025 

sinopower **®** UA 

~~**e** ee~~ reer e rere **e** 

## **SM1660DSCSC** 

## **Dual N Typical Operating Characteristics(Cont.)** 

## **Output Characteristics** 

## **Drain-Source On Resistance** 

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**----- Start of picture text -----**<br>
0.5 3.5V<br>0.4<br>at<br>a)oe [ee| |a<br>oo p-— | ay<br>a) KL2 4 6 8<br>VDS - Drain-Source Voltage (V)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.8<br>3.0<br>2.0 ———_<br>————<br>1.0<br>Os<br>0.0“0.0 0.2 0.4 0.6<br>ID - Drain Current (A)<br>)<br>Ω<br> - On Resistance (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

## **Gate Threshold Voltage** 

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**----- Start of picture text -----**<br>
8<br>,<br>4<br>TTT at |<br>sLLLEL q<br>2 3 4  EEE EETTTT5 6 7 8 9<br>VGS - Gate-Source Voltage (V)<br>)<br>Ω<br> - On Resistance (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14<br>1.2<br>—<br>a<br>0.8 >NN<br>-EEE<br>0250 -25 0 25 50 75 100 125<br>Tj - Junction Temperature ( ° C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright © sinopower Semiconductor Inc.                                                                           5 www.sinopowersemi.com Rev. A.7 – December, 2025 

**®** 

~~**e** ee~~ reer e rere **e** ~~ee~~ **Dual N Typical Operating Characteristics(Cont.)** 

## **SM1660DSCSC** 

## **Drain-Source On Resistance** 

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**----- Start of picture text -----**<br>
Normalized On Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Tj - Junction Temperature ( ° C)<br>**----- End of picture text -----**<br>


## **Capacitance** 

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**----- Start of picture text -----**<br>
21<br>18<br>15]<br>12 |<br>oiX<br>PN<br>6 oss|<br>3 Mocre¢}$|“ | | | | | tf<br>kT"<br>ott | ft i tT |<br>0 8 16 24 32<br>VDS - Drain-Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward** 

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**----- Start of picture text -----**<br>
T=25°C<br>0.10.0 02 04 06 08 1.0 1.2 14<br>VSD - Source-Drain Voltage (V)<br> - Source Current (A)<br>S<br>I<br>**----- End of picture text -----**<br>


**Gate Charge** 

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g<br>7<br>6<br>5<br>4<br>3, fe<br>Pofe<br>afe<br>Lf [fo<br>[Jo<br>of<br>0.0 0.4 0.8 1.2<br>QG - Gate Charge (nC)<br> - Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright © sinopower Semiconductor Inc.                                                                           6 www.sinopowersemi.com Rev. A.7 – December, 2025 

sinopower **®** NA 

## **SM1660DSCSC** 

Copyright © sinopower Semiconductor Inc.                                                                           7 www.sinopowersemi.com Rev. A.7 – December, 2025 

sinopower **®** UA 

## **SM1660DSCSC** 

Copyright © sinopower Semiconductor Inc.                                                                           8 www.sinopowersemi.com Rev. A.7 – December, 2025 

sinopower **®** UA 

## **SM1660DSCSC** 

Copyright © sinopower Semiconductor Inc.                                                                           9 www.sinopowersemi.com Rev. A.7 – December, 2025 

**®** 

## **SM1660DSCSC** ~~**e** ee~~ errr errr eeee e eee e **e** 

Copyright © sinopower Semiconductor Inc.                                                                           10 www.sinopowersemi.com Rev. A.7 – December, 2025 



## Links

- [View this product on Novapart](https://novapart.co/products/SM1660DSCS/sm1660dscs-dual-mosfet-n-channel-60v-sot-363)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1660DSCS)
---

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