# SM1600DSCS, Dual MOSFET, N Channel, 30V, SOT-363

![Product image](https://novapart.co/image/sinopower:SM1600DSCS_DUALN_CISS:23/)

**URL**: https://novapart.co/products/SM1600DSCS/sm1600dscs-dual-mosfet-n-channel-30v-sot-363
**SKU**: SM1600DSCS
**Reference SKUs**: UM6K1N
**Manufacturer**: Sinopower
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Cfg. | Dual N |
| Bv(V) | 30 |
| Package | SOT-363 |
| 2.5V Max. | 2100 |
| Vgs (±V) | 20 |
| Vth(V) Typ. | 1.1 |
| Id (A) Ta=25 | 0.31 |
| File: Package | http://www.sinopowersemi.com/Form2/download.aspx?type=2&p=6539 |
| Ciss (Pf) Typ. | 23 |
| Coss (Pf) Typ. | 5 |
| Crss (Pf) Typ. | 2 |
| File: Tape & Reel | http://www.sinopowersemi.com/Form2/download.aspx?type=3&p=6539 |
| File: Quality Report | http://www.sinopowersemi.com/Form2/download.aspx?type=4&p=6539 |
| Ron(Mω Max) 10V Max. | 800 |
| Ron(Mω Max) 4.5V Max. | 1100 |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/sinopower:SM1600DSCS_DUALN_CISS:23/)

**SM1600DSCS** 

sinopower VA **®** 

Dual N-Channel Enhancement Mode MOSFET ~~a~~ 

## **Features** 

## **Pin Description** 

- 30V/0.31A, 

- RDS(ON)= 0.8Ω(max.) @ VGS=10V 

- RDS(ON)= 1.1Ω(max.) @ VGS=4.5V 

RDS(ON)= 2.1Ω(max.) @ VGS=2.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

- ESD Protection 

## **Applications** 

- High Speed and Analog Switching Applications 

**==> picture [138 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
S2<br>G2<br>D2<br>D1<br>G1<br>w/ S1<br>Top View of SOT-363<br>(6)D1 (3)D2<br>(2) (5)<br>G1 G2<br>(1)S1 (4)S2<br>**----- End of picture text -----**<br>


- Low voltage drive (2.5V drive) 

N-Channel MOSFET 

**Ordering and Marking Information** 

SM1600DS Package Code CS : SOT-363 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device ~~s~~ e] SM1600DS  CS : M00X X - Lot Code ~~e~~ e 

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

**®** sinopower WN 

## **SM1600DSCS** 

**Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>|||||
|VDSS<br>~~pe~~|Drain-Source Voltage<br>~~pe~~||30<br>~~pe~~|V<br>~~pe~~<br>|
|VGSS<br>~~pe~~<br>~~a~~|Gate-Source Voltage<br>~~pe~~<br>||±20<br>~~pe~~<br>||
|TJ<br>~~ie~~|Maximum Junction Temperature<br>~~ie~~||150<br>~~ie~~|°C<br>~~ie~~|
|TSTG<br>~~ie~~<br>~~a~~|Storage Temperature Range<br>~~ie~~||-55 to 150<br>~~ie~~||
|IS<br>~~ie~~<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~ie~~<br>~~ee~~|TA=25°C<br>~~ie~~<br>~~ee~~|0.14<br>~~ie~~<br>~~ee~~|A<br>~~ie~~<br>~~a~~<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~|0.31<br>~~ee~~||
|||TA=70°C<br>~~ee~~<br>~~a~~|0.25<br>~~ee~~<br>~~a~~||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>~~a~~|TA=25°C<br>~~a~~<br>~~es ee~~|0.4<br>~~a~~<br>~~ee~~||
|PD<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TA=25°C<br>~~a~~<br>~~es ee~~|0.16<br>~~a~~<br>~~ee~~|W<br>~~a~~<br>~~ee~~|
|||TA=70°C<br>~~a~~<br>~~es ee~~<br>~~a~~<br>~~ee~~|0.1<br>~~a~~<br>~~ee~~<br>~~a~~||
|RθJA<br>~~a~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~|Steady State<br>~~es ee~~<br>~~ee~~<br>~~ee~~|800<br>~~ee~~<br>~~ee~~|°C/W<br>~~ee~~<br>~~ee~~|
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~||760|°C/W|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

_www.sinopowersemi.com_ 

## **SM1600DSCS** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~en~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V,IDS=250µA<br><br>~~a~~<br>~~ce~~||30<br><br>~~ce~~|-<br><br>~~ce~~|-<br><br>~~ee~~|V<br><br>~~ee~~|
|IDSS<br>~~aee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~<br>~~ce~~<br>~~a~~||-<br>~~ee~~<br>~~ce~~|-<br>~~ee~~<br>~~ce~~|1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~a~~|
||||TJ=85°C<br>~~ee~~<br>~~ce~~<br>~~a~~|-<br>~~ee~~<br>~~ce~~<br>~~a~~|-<br>~~ee~~<br>~~ce~~<br>~~a~~|30<br>~~ee~~<br>~~ee~~<br>~~a~~||
|VGS(th)<br>~~ee~~<br>~~a GG~~|Gate Threshold Voltage<br>~~ee~~<br>~~GG~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~<br>~~ce~~<br>~~a~~<br>~~GG~~||0.8<br>~~ee~~<br>~~ce~~<br>~~a~~<br>~~GG~~|1.1<br>~~ee~~<br>~~ce ~~<br>~~a~~<br>~~GG~~|1.5<br>~~ee~~<br> ~~ee~~<br>~~a~~<br>~~GG~~|V<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~GG~~|
|IGSS<br>~~a GG~~|Gate Leakage Current<br>~~GG~~|VGS=±20V, VDS=0V<br>~~GG~~||-<br>~~GG~~<br>~~ee~~|±2<br>~~GG~~<br>~~ee~~|±9<br>~~GG~~|µA<br>~~GG~~|
|RDS(ON)<br>b<br>~~a~~|Drain-Source On-state Resistance<br>|VGS=10V, IDS=0.4A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.8<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|
|||VGS=4.5V, IDS=0.3A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.8<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.1<br>~~ee~~||
|||VGS=4V, IDS=0.3A<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|0.9<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>||
|||VGS=2.5V, IDS=0.2A<br>~~ee~~<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.4<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|2.1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||
|Gfs<br>~~a~~|Forward Transconductance<br>|VDS=3 , ID=10mA<br>||-<br>~~ee~~<br>|0.9<br>~~ee~~<br>|-<br>~~ee~~<br>|S<br>~~ee~~<br>|
|**Diode Characteristics**<br>~~ee~~||||||||
|VSD<br>b<br>~~ee~~<br>~~ee~~<br>~~Ce~~|Diode Forward Voltage<br>~~ee~~<br>~~ee~~|ISD=0.4A, VGS=0V<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|0.85<br>~~ee~~<br>~~ee~~|1.1<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|**Dynamic Characteristics**<br>c<br>~~Cea~~<br>~~ee~~<br>~~|~~||||||||
|Ciss<br>~~Cea~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~|23<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~|5<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|Crss<br>~~a~~<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~|2<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|td(ON)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~ft~~|1.4<br>~~|~~<br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~|~~<br>~~ft~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~ft~~<br>~~|~~|11.8<br>~~|~~<br>~~ft~~<br>~~|~~|-<br>~~|~~<br>~~ft~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~rs~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~|||-<br>~~ft~~<br>~~|~~<br>~~|~~|8<br>~~ft~~<br>~~|~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~|~~||
|tf<br>~~a~~<br>~~rs~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~|~~<br>~~|~~|2<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|**Gate Charge Characteristics**<br>c<br>~~rs~~<br>~~|~~<br>~~ee~~||||||||
|Qg<br>~~ee~~|Total Gate Charge|VDS=15V, VGS=10V,<br>IDS=1A<br>~~—~~||-<br>~~—~~<br>~~**|**~~|1.6|-|nC<br>~~|~~<br>~~fT~~|
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=15V, VGS=4.5V,<br>IDS=1A<br>~~—~~<br>~~ee~~<br>~~—~~<br>~~ee~~||-<br>~~—~~<br>~~**|**~~<br>~~|~~|0.7<br>~~|~~|-<br>~~|~~||
|Qgs<br>~~ee~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~|||-<br>~~—~~<br>~~**|**~~<br>~~|~~<br>~~—~~<br>~~**|**~~|0.54<br>~~|~~|-<br>~~|~~||
|Qgd<br>~~a~~<br>~~ee~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~—~~<br>~~**|**~~<br>~~fT~~|0.03<br>~~|~~<br>~~fT~~|-<br>~~|~~<br>~~fT~~||
|Qgth<br>~~ee~~<br>~~ee~~|Threshold Gate Charge<br>~~ee~~|||-<br>~~—~~<br>~~**|**~~<br>~~fT~~|0.02<br>~~fT~~|-<br>~~fT~~||



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**®** 

## **SM1600DSCS** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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0.18 0.35<br>0.30<br>0.15<br>0.25<br>0.12<br>0.20<br>0.09<br>0.15<br>0.06<br>0.10<br>0.03<br>0.05<br>TA=25oC TA=25 o C,VG=10V<br>0.00 a 0.00<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>1 2<br>1 Duty = 0.5<br>0.2<br>300µs<br>0.1 1ms 0.1<br>0.05<br>10ms<br>0.1 0.02<br>100ms<br>0.01 0.01<br>1s<br>DC<br>Single Pulse<br>Mounted on 1in2 pad<br>1E-3 TA=25oC 0.01 RθJA : 800 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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**®** 

## **SM1600DSCS** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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1.0<br>VGS=4,5,6,7,8,9,10V<br>3V<br>0.8<br>0.6<br>2.5V<br>0.4<br>0.2 2V<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-Source Voltage (V)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

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3.0<br>I =0.4A<br>DS<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Drain-Source On Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.8<br>2.4<br>VGS=2.5V<br>2.0<br>1.6<br>1.2 V GS =4.5V<br>V =4V<br>GS<br>0.8<br>V =10V<br>GS<br>0.4<br>0.0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>IDS=250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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5 

## **SM1600DSCS** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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**----- Start of picture text -----**<br>
1.8<br>V  = 10V<br>GS<br> I  = 0.4A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>RON@Tj=25 o C: 0.5Ω<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
  Tj - Junction Temperature (°C)<br>**----- End of picture text -----**<br>


**Capacitance** 

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**----- Start of picture text -----**<br>
32<br>Frequency=1MHz<br>28<br>24 Ciss<br>20<br>16<br>12<br>8<br>Coss<br>4 Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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1<br>0.5 T =150oC<br>j<br>T =25 o C<br>j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>        VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V =15V<br>DS<br>9<br> I =1A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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**®** sinopower WA 

**SM1600DSCS** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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**®** sinopower N 

**SM1600DSCS** 

## **Disclaimer** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

8 

Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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sinopower **®** UA 

**SM1600DSCS** 

## **Classification Profile** 

9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

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**®** 

## **SM1600DSCS** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5635080 

Copyright  Sinopower Semiconductor, Inc. Rev. A.6 - September, 2015 

10 

_www.sinopowersemi.com_ 



## Links

- [View this product on Novapart](https://novapart.co/products/SM1600DSCS/sm1600dscs-dual-mosfet-n-channel-30v-sot-363)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](http://www.sinopowersemi.com/Form2/F505.aspx?key=SM1600DSCS)
---

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