# IGBT, 16.5 A, 3.1 V, 125 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2212817/)

**URL**: https://novapart.co/products/SKW07N120FKSA1/igbt-165-a-31-v-125-w-12-kv-to-247-3-pins
**SKU**: SKW07N120FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.0600
**Stock**: 10+

## Description

DC Collector Current:16.5A; Collector Emitter Saturation Voltage Vce(on):3.1V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 16.5A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 3.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212817/)

SKW07N120 

## Cinfineon 

## Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 

- Lower _E_ off compared to previous generation 

- Short circuit withstand time – 10 µ s 

- Designed for: 

   - Motor controls 

   - Inverter 

   - SMPS 

- NPT-Technology offers: 

   - very tight parameter distribution 

   - high ruggedness, temperature stable behaviour 

   - parallel switching capability 

C G KG E PG-TO-247-3 

- Qualified according to JEDEC[1] for target applications 

- Pb-free lead plating; RoHS compliant 

- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ 

|**Maximum Ratings **||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~+~~|**Value**<br>~~+~~|**Unit**|
|Collector-emitter voltage|_V_C E<br>~~+~~|1200<br>~~+~~|V|
|DC collector current<br>_T_C= 25°C<br>_T_C= 100°C|_I_C<br>~~pf~~|16.5<br>7.9<br>~~pf~~|A|
|Pulsed collector current,_t_plimited by _T_jmax|_I_C p u l s<br>~~pf~~|27<br>~~pf~~||
|Turn off safe operating area<br>_V_CE≤1200V,_T_j ≤150°C|_-_<br>~~ft~~|27<br>~~ft~~||
|Diode forward current<br>_T_C= 25°C<br>_T_C= 100°C|_I_F<br>~~pf~~|13<br>7<br>~~pf~~||
|Diode pulsed current,_t_plimited by _T_jmax|_I_F p u l s<br>~~pf~~<br>~~ee~~|27<br>~~pf~~<br>~~eee~~||
|Gate-emitter voltage|_V_G E<br>~~ee~~|±20<br>~~eee~~|V|
|Short circuit withstand time2<br>_V_GE= 15V, 100V ≤ _V_CC≤1200V,_T_j ≤150°C|_t_S C<br>~~ee ~~<br>~~Cf~~|10<br> ~~eee~~<br>~~Cf~~|µs|
|Power dissipation<br>_T_C= 25°C|_P_t o t<br>~~|~~|125<br>~~|~~|W|
|Operating junction and storage temperature|_T_j,_T_s t g<br>~~|~~|-55...+150<br>~~|~~|°C|
|Soldering temperature,<br>wavesoldering, 1.6mm(0.063 in.)from case for 10s|_T_s<br>~~Cf~~|260<br>~~Cf~~||



> 1 J-STD-020 and JESD-022 

> 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 

Rev. 2_2     Sep 08 

Power Semiconductors 

## SKW07N120 

## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t h JC||1|K/W|
|Diode thermal resistance,<br>junction – case|_R_t h JC D||2.5||
|Thermal resistance,<br>junction – ambient|_R_t h JA||40||



## **Electrical Characteristic,** at _T_ j = 25 ° C, unless otherwise specified 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ. **|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( B R ) C E S|_V_G E=0V,_I_C=500µA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_C E ( s a t )|_V_G E= 15V,_I_C=8A<br>_T_j=25°C<br>_T_j=150°C|2.5<br>-|3.1<br>3.7|3.6<br>4.3||
|Diode forward voltage|_V_F|_V_G E=0V,_I_F=7A<br>_T_j=25°C<br>_T_j=150°C|-|2.0<br>1.75|2.4||
|Gate-emitter threshold voltage|_V_G E ( t h )|_I_C=350µA,_V_C E=_V_G E|3|4|5||
|Zero gate voltage collector current|_I_C E S|_V_CE=1200V,VGE=0V<br>_T_j=25°C<br>_T_j=150°C|-<br>-|-<br>-|100<br>400|µA|
|Gate-emitter leakage current|_I_G E S|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_f s|_V_C E=20V,_I_C=8A||6|-|S|
|**Dynamic Characteristic**|||||||
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|720|870|pF|
|Output capacitance|_C_o s s||-|90|110||
|Reverse transfer capacitance|_C_r ss||-|40|50||
|Gate charge|_Q_G a t e|_V_C C=960V,_I_C=8A<br>_V_G E=15V|-|70|90|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH|
|Short circuit collector current1)|_I_C ( S C )|_V_G E=15V,_t_SC≤10µs<br>100V≤_V_C C≤1200V,<br>_T_j ≤150°C|-|75|-|A|



> 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

Rev. 2_2     Sep 08 

2 

Power Semiconductors 

## SKW07N120 

## **Switching Characteristic, Inductive Load,** at _T_ j=25 ° C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ. **|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d ( o n )|_T_j=25°C,<br>_V_C C=800V,_I_C=8A,<br>_V_G E=15V/0V,<br>_R_G=47Ω,<br>Lσ<br>1 )=180nH,<br>Cσ<br>1 )=40pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|27|35|ns|
|Rise time|_t_r||-|29|38||
|Turn-off delaytime|_t_d(o f f)||-|440|570||
|Fall time|_t_f||-|21|27||
|Turn-on energy|_E_o n||-|0.6|0.8|mJ|
|Turn-off energy|_E_o f f||-|0.4|0.55||
|Total switching energy|_E_t s||-|1.0|1.35||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recovery time|_t_r r<br>_t_S<br>_t_F|_T_j=25°C,<br>_V_R=800V,_I_F=8A,<br>_di_F_/dt_=400A/µs|-<br>-<br>-|60||ns|
|Diode reverse recovery charge|_Q_r r||-|0.3||µC|
|Diode peak reverse recoverycurrent|_I_r r m||-|9||A|
|Diode peak rate of fall of reverse<br>recoverycurrent during _t_F|_di_r r_/dt_||-|400||A/µs|



## **Switching Characteristic, Inductive Load,** at _T_ j=150 ° C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ. **|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d(o n)|_T_j=150°C<br>_V_C C=800V,<br>_I_C=8A,<br>_V_G E=15V/0V,<br>_R_G=47Ω,<br>Lσ<br>1 )=180nH,<br>Cσ<br>1 )=40pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|30|36|ns|
|Rise time|_t_r||-|26|31||
|Turn-off delaytime|_t_d(o f f)||-|490|590||
|Fall time|_t_f||-|30|36||
|Turn-on energy|_E_o n||-|1.0|1.2|mJ|
|Turn-off energy|_E_o f f||-|0.7|0.9||
|Total switching energy|_E_t s||-|1.7|2.1||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recovery time|_t_r r<br>_t_S<br>_t_F|_T_j=150°C<br>_V_R=800V,_I_F=8A,<br>_di_F_/dt_=500A/µs|-<br>-<br>-|170||ns|
|Diode reverse recovery charge|_Q_r r||-|1.1||µC|
|Diode peak reverse recoverycurrent|_I_r r m||-|15||A|
|Diode peak rate of fall of reverse<br>recoverycurrent during _t_F|_di_r r_/dt_||-|110||A/µs|



> [1)] Leakage inductance L σ and stray capacity C σ due to dynamic test circuit in figure E. 

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SKW07N120 

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**----- Start of picture text -----**<br>
35A<br>Ic<br>30A<br>25A<br>20A T C=80°C<br>15A<br>T C=110°C<br>10A<br>5A Ic<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>f , SWITCHING FREQUENCY<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 1. Collector current as a function of switching frequency** ( _T_ j ≤ 150 ° C, _D =_ 0.5, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47 Ω ) 

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**----- Start of picture text -----**<br>
150W<br>125W<br>100W<br>75W<br>50W<br>25W<br>0W<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>


**Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 150 ° C) 

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**----- Start of picture text -----**<br>
t p=5 µ s<br>15 µ s<br>10A<br>50 µ s<br>200 µ s<br>1A<br>1ms<br>0.1A DC<br>1V 10V 100V 1000V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 2. Safe operating area** 

( _D =_ 0, _T_ C = 25 ° C, _T_ j ≤ 150 ° C) 

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**----- Start of picture text -----**<br>
20A<br>15A<br>10A<br>5A<br>0A<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 4. Collector current as a function of case temperature** 

( _V_ GE ≤ 15V, _T_ j ≤ 150 ° C) 

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**----- Start of picture text -----**<br>
25A<br>20A<br>V =17V<br>GE<br>15V<br>15A<br>13V<br>11V<br> 9V<br>10A  7V<br>5A<br>0A<br>0V 1V 2V 3V 4V 5V 6V 7V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 5. Typical output characteristics** ( _T_ j = 25 ° C) 

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**----- Start of picture text -----**<br>
25A<br>20A<br>15A<br>T J=+150°C<br>T J=+25°C<br>10A T J=-40°C<br>5A<br>0A<br>3V 5V 7V 9V 11V<br>V GE, GATE-EMITTER VOLTAGE<br>Figure 7. Typical transfer characteristics<br>( V CE = 20V)<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
25A<br>20A<br>V =17V<br>GE<br>15V<br>15A 13V<br>11V<br> 9V<br> 7V<br>10A<br>5A<br>0A<br>0V 1V 2V 3V 4V 5V 6V 7V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 6. Typical output characteristics<br>( T j = 150 ° C)<br>6V<br>IC=16A<br>5V<br>4V IC=8A<br>3V IC=4A<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>EMITTER SATURATION VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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5 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>t f<br>100ns<br>t<br>d(on)<br>t r<br>10ns<br>0A 5A 10A 15A 20A<br>I C, COLLECTOR CURRENT<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br>


**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ j = 150 ° C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47 Ω , dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t t r<br>d(on)<br>t f<br>10ns<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br>


**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, _R_ G = 47 Ω , dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
000ns<br>t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0 Ω 20 Ω 40 Ω 60 Ω 80 Ω 100 Ω<br>R G, GATE RESISTOR<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br>


**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ j = 150 ° C, 

_V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
6V<br>5V<br>4V max.<br>3V typ.<br>min.<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>EMITTER THRESHOLD VOLTAGE<br>-<br>GATE<br>,<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.3mA) 

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6 

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SKW07N120 

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**----- Start of picture text -----**<br>
5mJ *)  E on and  E ts include losses  E ts*<br>due to diode recovery.<br>4mJ<br>E *<br>on<br>3mJ<br>E<br>2mJ off<br>1mJ<br>0mJ<br>0A 5A 10A 15A 20A<br>I C, COLLECTOR CURRENT<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


**Figure 13. Typical switching energy losses** 

**as a function of collector current** (inductive load, _T_ j = 150 ° C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47 Ω , dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
2.0mJ<br>*)  E on and  E ts include losses  *<br>E<br>due to diode recovery.  ts<br>1.5mJ<br>E *<br>on<br>1.0mJ<br>E<br>off<br>0.5mJ<br>0.0mJ<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


**Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, _R_ G = 47 Ω , dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
2.5mJ<br>*)  E on and  E ts include losses  E *<br>due to diode recovery.  ts<br>2.0mJ<br>1.5mJ<br>E *<br>on<br>1.0mJ E off<br>0.5mJ<br>0.0mJ<br>0 Ω 20 Ω 40 Ω 60 Ω 80 Ω 100 Ω<br>R G, GATE RESISTOR<br>Figure 14. Typical switching energy losses<br>as a function of gate resistor<br>(inductive load,  T j = 150 ° C,<br>V CE = 800V,  V GE = +15V/0V,  I C = 8A,<br>dynamic test circuit in Fig.E )<br>100K/W<br>D =0.5<br>0.2<br>0.1<br>10-1K/W<br>0.05<br>R , ( K / W ) τ , ( s )<br>0.02<br>0.1020  0.77957<br>0.40493 0.21098<br>0.01<br>-2 0.26391  0.01247<br>10 K/W<br>0.22904  0.00092<br>R 1 R 2<br>single pulse C 1= τ 1/ R 1 C 2= τ 2/ R 2<br>10-3K/W<br>1µs 10µs 100µs 1ms 10ms 100ms 1s<br>t p, PULSE WIDTH<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br>


**Figure 16. IGBT transient thermal impedance as a function of pulse width** ( _D_ = _t_ p / _T_ ) 

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SKW07N120 

**==> picture [222 x 236] intentionally omitted <==**

**----- Start of picture text -----**<br>
20V<br>15V<br>10V UCE=960V<br>5V<br>0V<br>0nC 20nC 40nC 60nC 80nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


**Figure 17. Typical gate charge** ( _I_ C = 8A) 

**==> picture [226 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 µ s<br>25 µ s<br>20 µ s<br>15 µ s<br>10 µ s<br>5 µ s<br>0 µ s<br>10V 11V 12V 13V 14V 15V<br>V GE, GATE-EMITTER VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>,<br>t sc<br>**----- End of picture text -----**<br>


**Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE = 1200V, start at _T_ j = 25 ° C) 

**==> picture [224 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
1nF<br>C iss<br>100pF<br>C oss<br>C rss<br>0V 10V 20V 30V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>CAPACITANCE<br>,<br>C<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE = 0V, _f_ = 1MHz) 

**==> picture [227 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
150A<br>100A<br>50A<br>0A<br>10V 12V 14V 16V 18V 20V<br>V GE, GATE-EMITTER VOLTAGE<br>SHORT CIRCUIT COLLECTOR CURRENT<br>,<br>I C(sc)<br>**----- End of picture text -----**<br>


**Figure 20. Typical short circuit collector current as a function of gate-emitter voltage** (100V ≤ _V_ CE ≤ 1200V, _T_ C = 25 ° C, _T_ j ≤ 150 ° C) 

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SKW07N120 

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**----- Start of picture text -----**<br>
350ns<br>300ns<br>250ns<br>I =7A<br>F<br>200ns<br>150ns<br>100ns<br>I =3.5A<br>F<br>50ns<br>0ns<br>200A/ µ s 400A/ µ s 600A/ µ s 800A/ µ s<br>di  F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>,<br>t rr<br>**----- End of picture text -----**<br>


**Figure 21. Typical reverse recovery time as a function of diode current slope** ( _V_ R = 800V, _T_ j = 150 ° C, dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
25A<br>20A I =7A<br>F<br>15A<br>10A<br>I =3.5A<br>F<br>5A<br>0A<br>200A/ µ s 400A/ µ s 600A/ µ s 800A/ µ s<br>di  F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CURRENT<br>,<br>I rr<br>**----- End of picture text -----**<br>


**Figure 23. Typical reverse recovery current as a function of diode current slope** ( _V_ R = 800V, _T_ j = 150 ° C, dynamic test circuit in Fig.E ) 

**==> picture [223 x 239] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.50µC<br>1.25µC<br>I =7A<br>F<br>1.00µC<br>0.75µC I =3.5A<br>F<br>0.50µC<br>0.25µC<br>0.00µC<br>200A/ µ s 400A/ µ s 600A/ µ s 800A/ µ s<br>di  F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CHARGE<br>,<br>rr<br>Q<br>**----- End of picture text -----**<br>


**Figure 22. Typical reverse recovery charge as a function of diode current slope** ( _V_ R = 800V, _T_ j = 150 ° C, dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
300A/ µ s<br>I =3.5A<br>F<br>200A/ µ s<br>I =7A<br>F<br>100A/ µ s<br>0A/ µ s<br>200A/ µ s 400A/ µ s 600A/ µ s 800A/ µ s<br>di F /dt , DIODE CURRENT SLOPE<br>DIODE PEAK RATE OF FALL<br>,<br>/dt<br> r r<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>


**Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R = 800V, _T_ j = 150 ° C, dynamic test circuit in Fig.E ) 

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**----- Start of picture text -----**<br>
3.0V<br>20A IF=14A<br>2.5V<br>15A TJ=150°C 2.0V IF=7A<br>1.5V IF=3.5A<br>10A<br>TJ=25°C<br>1.0V<br>5A<br>0.5V<br>0A 0.0V<br>0V 1V 2V 3V 4V 0°C 40°C 80°C 120°C<br>V F, FORWARD VOLTAGE T j, JUNCTION TEMPERATURE<br>I FORWARD CURRENTF,  V FORWARD VOLTAGEF,<br>**----- End of picture text -----**<br>


**Figure 25. Typical diode forward current as a function of forward voltage** 

**Figure 26. Typical diode forward voltage as a function of junction temperature** 

**==> picture [231 x 238] intentionally omitted <==**

**----- Start of picture text -----**<br>
D =0.5<br>100K/W<br>0.2<br>0.1<br>0.05 R , ( K / W ) τ , ( s )<br>0.75885 0.09354<br>0.88470  0.00543<br>10-1K/W 0.85670 0.00042<br>R 1 R 2<br>single pulse C 1= τ 1/ R 1 C 2= τ 2/ R 2<br>10µs 100µs 1ms 10ms 100ms 1s<br>t p, PULSE WIDTH<br>0.02<br>0.01<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJCD<br>Z<br>**----- End of picture text -----**<br>


**Figure 27. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ p / _T_ ) 

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## SKW07N120 

## PG-TO247-3 

**==> picture [401 x 617] intentionally omitted <==**

**----- Start of picture text -----**<br>
M<br>M<br>MIN MAX MIN MAX<br>4.90 5.16 0.193 0.203<br>2.27 2.53 0.089 0.099<br>1.85 2.11 0.073 0.083 Z8B00003327<br>1.07 1.33 0.042 0.052<br>0<br>1.90 2.41 0.075 0.095<br>1.90 2.16 0.075 0.085<br>2.87 3.38 0.113 0.133<br>2.87 3.13 0.113 0.123<br>0 5 5<br>0.55 0.68 0.022 0.027<br>20.82 21.10 0.820 0.831 7.5mm<br>16.25 17.65 0.640 0.695<br>1.05 1.35 0.041 0.053<br>15.70 16.03 0.618 0.631<br>13.10 14.15 0.516 0.557<br>3.68 5.10 0.145 0.201<br>1.68 2.60 0.066 0.102<br>5.44 0.214<br>3 3<br>19.80 20.31 0.780 0.799 17-12-2007<br>4.17 4.47 0.164 0.176<br>3.50 3.70 0.138 0.146<br>5.49 6.00 0.216 0.236 03<br>6.04 6.30 0.238 0.248<br>**----- End of picture text -----**<br>


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SKW07N120 

**==> picture [285 x 284] intentionally omitted <==**

**Figure A. Definition of switching times** 

**==> picture [286 x 284] intentionally omitted <==**

**Figure B. Definition of switching losses** 

**==> picture [189 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I t t<br>F S F<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>τ 1 τ 2 τ n<br>r1 r 2 r n<br>Tj (t)<br>p(t) r1 r 2 r n<br>TC<br>**----- End of picture text -----**<br>


**Figure D. Thermal equivalent circuit** 

**==> picture [170 x 194] intentionally omitted <==**

**Figure E. Dynamic test circuit** Leakage inductance L σ =180nH, and stray capacity   C σ =40pF. 

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## SKW07N120 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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## Links

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---

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