# IGBT Module, Single, 616 A, 1.8 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:2749605/)

**URL**: https://novapart.co/products/SKM400GA12T4/igbt-module-single-616-a-18-v-175-c
**SKU**: SKM400GA12T4
**Manufacturer**: SEMIKRON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €170.2100
**Stock**: 10+
**Lead Time**: 168 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor C

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jun-2015) |
| Product Range | SEMITRANS 4 |
| Igbt Technology | IGBT 4 [Trench] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 616A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 616A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Saturation Voltage Vce(On) | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2749605/)

**SKM400GA12T4** ~~—~~ 

**SEMITRANS[®] 4** 

## Fast IGBT4 Modules 

## **SKM400GA12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- AC inverter drives 

- UPS 

- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

||**Absolute Maximum Ratings**|
|---|---|
||**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**|
||**IGBT**|
||VCES<br>Tj= 25 °C<br>1200<br>V|
||IC<br>Tj= 175 °C<br>Tc= 25 °C<br>616<br>A<br>Tc= 80 °C<br>474<br>A|
||ICnom<br>400<br>A|
||ICRM<br>ICRM= 3xICnom<br>1200<br>A|
||VGES<br>-20 ... 20<br>V|
||tpsc<br>VCC= 800 V<br>VGE≤ 15 V<br>VCES≤ 1200 V<br>Tj= 150 °C<br>10<br>µs<br>Tj<br>-40 ... 175<br>°C<br>**Inverse diode**<br>IF<br>Tj= 175 °C<br>Tc= 25 °C<br>440<br>A<br>Tc= 80 °C<br>329<br>A<br>IFnom<br>400<br>A<br>IFRM<br>IFRM= 3xIFnom<br>1200<br>A<br>IFSM<br>tp= 10 ms, sin 180°, Tj= 25 °C<br>1980<br>A<br>Tj<br>-40 ... 175<br>°C<br>**Module**<br>~~ee~~<br>~~ee ee~~<br>~~BC~~<br>~~ee~~<br>~~ee ee~~<br>~~pf~~<br>~~TO~~|
||It(RMS)<br>Tterminal= 80 °C<br>500<br>A<br>Tstg<br>-40 ... 125<br>°C<br>Visol<br>AC sinus 50 Hz, t = 1 min<br>4000<br>V<br>~~ee~~|
|||
||**Characteristics**|
||**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**|
||**IGBT**|
|VCE(sat)<br>IC= 400 A<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>1.80<br>2.05<br>V<br>Tj= 150 °C<br>2.20<br>2.40<br>V<br>VCE0<br>chiplevel<br>Tj= 25 °C<br>0.8<br>0.9<br>V<br>Tj= 150 °C<br>0.7<br>0.8<br>V<br>rCE<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>2.50<br>2.88<br>m<br>Tj= 150 °C<br>3.75<br>4.00<br>m<br>VGE(th)<br>VGE=VCE, IC= 15.2 mA<br>5<br>5.8<br>6.5<br>V<br>ICES<br>VGE= 0 V<br>VCE= 1200 V<br>Tj= 25 °C<br>5<br>mA<br>Tj= 150 °C<br>mA<br>Cies<br>VCE= 25 V<br>VGE= 0 V<br>f = 1 MHz<br>24.6<br>nF<br>Coes<br>f = 1 MHz<br>1.62<br>nF<br>Cres<br>f = 1 MHz<br>1.38<br>nF<br>QG<br>VGE= - 8 V...+ 15 V<br>2260<br>nC<br>RGint<br>Tj= 25 °C<br>1.9<br><br>td(on)<br>VCC= 600 V<br>IC= 400 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 7100 A/µs<br>di/dtoff= 3900 A/µs<br>Tj= 150 °C<br>240<br>ns<br>tr<br>Tj= 150 °C<br>56<br>ns<br>Eon<br>Tj= 150 °C<br>28<br>mJ<br>td(off)<br>Tj= 150 °C<br>500<br>ns<br>tf<br>Tj= 150 °C<br>90<br>ns<br>Eoff<br>Tj= 150 °C<br>44<br>mJ<br>Rth(j-c)<br>per IGBT<br>0.072<br>K/W<br>~~le~~<br>~~ee~~<br>~~ee~~<br>~~ppfe~~<br>~~eePP fo fod~~<br>~~eeee~~<br>~~ee~~<br>~~==~~<br>~~os~~<br>~~ee ee~~<br>~~**a**~~<br>~~ee~~<br>~~es ae~~||



**GA** 

~~ee~~ **© by SEMIKRON Rev. 4 – 03.09.2013 1** 

**SKM400GA12T4** 

**Characteristics** 2 **Symbol Conditions min. typ. max. Unit Inverse diode** VF = VEC IF = 400 A Tj = 25 °C 2.20 2.52 V VGE = 0 V chiplevel Tj = 150 °C 2.15 2.47 V e >, ysl d ~~ee ee~~ VF0 Tj = 25 °C 1.3 1.5 V chiplevel Tj = 150 °C 0.9 1.1 V i ~~eee~~ rF Tj = 25 °C 2.3 2.5 m chiplevel **SEMITRANS[®] 4** ~~ee~~ IRRM IF = 400 A ~~a~~ TTjj = 150 °C = 150 °C 4403.1 3.4 mA Qrr di/dtoff = 7200 A/µs Tj = 150 °C 78 µC ~~ee~~ VGE = ±15 V ~~—————~~ Fast IGBT4 Modules Err VCC = 600 V Tj = 150 °C 37 mJ ~~a—~~ Rth(j-c) per diode ~~eee~~ ~~**e** e~~ 0.14 K/W ~~ee~~ **Module SKM400GA12T4** LCE 15 20 nH ~~ee~~ RCC'+EE' TC = 25 °C 0.18 ~~ee~~ m terminal-chip **Features** TC = 125 °C 0.22 m ~~ee po~~ • IGBT4 = 4. generation fast trench IGBT ~~aPf~~ Rth(c-s) per module 0.02 0.038 K/W (Infineon) Ms to heat sink M6 3 5 Nm • CAL4 = Soft switching 4. generation Mt M6 2.5 5 Nm to terminals CAL-diode M4 1.1 2 Nm • Isolated copper baseplate using DBC ~~a~~ w 330 g technology (Direct Bonded Copper) ~~ee |~~ 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- AC inverter drives 

- UPS 

- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

**GA** ~~J |~~ **2 Rev. 4 – 03.09.2013 © by SEMIKRON** 

**SKM400GA12T4** 

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3: Typ. turn-on /-off energy = f (IC) 

Fig. 5: Typ. transfer characteristic 

Fig. 2: Rated current vs. temperature IC = f (TC) 

Fig. 4: Typ. turn-on /-off energy = f (RG) 

Fig. 6: Typ. gate charge characteristic 

**© by SEMIKRON** 

**Rev. 4 – 03.09.2013** 

**3** 

**SKM400GA12T4** 

Fig. 7: Typ. switching times vs. IC 

Fig. 9: Transient thermal impedance 

Fig. 11: CAL diode peak reverse recovery current 

Fig. 8: Typ. switching times vs. gate resistor RG 

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' 

Fig. 12: Typ. CAL diode peak reverse recovery charge 

**© by SEMIKRON** 

**Rev. 4 – 03.09.2013** 

**4** 

**SKM400GA12T4** 

**SEMITRANS 4 GA** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

~~SS~~ **© by SEMIKRON Rev. 4 – 03.09.2013 5** 



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