# IGBT Module, Single, 232 A, 1.8 V, 125 °C, Module

![Product image](https://novapart.co/image/farnell:2423685/)

**URL**: https://novapart.co/products/SKM150GAL12T4/igbt-module-single-232-a-18-v-125-c
**SKU**: SKM150GAL12T4
**Manufacturer**: SEMIKRON
**Price**: €58.9300
**Stock**: 10+
**Lead Time**: 168 days (indicative)

## Description

Transistor Polarity:NPN; DC Collector Current:232A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Sty

## Specifications

| Parameter | Value |
|---|---|
| Product Range | - |
| Igbt Technology | IGBT 4 Fast [Trench] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Transistor Polarity | NPN |
| Dc Collector Current | 232A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 232A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Saturation Voltage Vce(On) | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2423685/)

**SKM150GAL12T4** 

**SEMITRANS[®] 2** 

## Fast IGBT4 Modules 

## **SKM150GAL12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- Electronic welders at fsw up to 20 kHz 

- DC/DC – converter 

- Brake chopper 

|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|
|---|---|---|---|---|
|VCES|Tj= 25 °C||1200|V|
|IC|Tj= 175 °C|Tc= 25 °C|232|A|
|||Tc= 80 °C|179|A|
|ICnom|~~pppo~~||150<br>~~po~~|A<br>~~po~~|
|ICRM|ICRM= 3xICnom<br>~~pppo~~||450<br>~~po~~|A<br>~~po~~|
|VGES|~~pppo~~||-20 ... 20<br>~~po~~|V<br>~~po~~|
|tpsc|VCC= 800 V<br>VGE≤ 15 V<br>VCES≤ 1200 V<br>~~pp~~|Tj= 150 °C<br>~~pppo~~|10<br>~~po~~|µs<br>~~po~~|
|Tj<br>~~Oo~~|~~pppo~~<br>~~Oo~~||-40 ... 175<br>~~po~~<br>~~Oo~~|°C<br>~~po~~<br>~~Oo~~|
|**Inverse diode**<br>~~Oo~~<br>~~ee~~<br>~~es~~|||||
|IF<br>~~Oo~~|Tj= 175 °C<br>~~Oo~~<br>~~ee~~<br>~~———~~|Tc= 25 °C<br>~~Oo~~<br>~~ee~~|189<br>~~Oo~~<br>~~es~~|A<br>~~Oo~~|
|~~—~~||Tc= 80 °C<br>~~ee~~<br>~~ee~~<br>~~—~~|141<br>~~es~~<br>~~ee~~|A<br>~~ee~~|
|IFnom<br>~~_~~<br>~~—~~|~~ee~~<br>~~———~~||150<br>~~ee~~|A<br>~~ee~~|
|IFRM<br>~~_~~<br>~~—~~|IFRM= 3xIFnom<br>~~ee~~<br>~~———~~||450<br>~~ee~~|A<br>~~ee~~|
|IFSM<br>~~_~~<br>~~—~~|tp= 10 ms, sin 180°, Tj= 25 °C<br>~~ee~~<br>~~———~~||900<br>~~ee~~|A<br>~~ee~~|
|Tj<br>~~_~~<br>~~—~~|~~ee~~<br>~~a~~<br>~~———~~||-40 ... 175<br>~~ee~~<br>~~a~~|°C<br>~~ee~~<br>~~a~~|
|**Freewheeling diode**<br>~~———~~|||||
|IF<br>~~—~~|Tj= 175 °C<br>~~———~~|Tc= 25 °C<br>~~—~~|189|A|
|||Tc= 80 °C|141|A|
|IFnom<br>~~ee~~<br>~~eea~~|~~a~~||150|A|
|IFRM<br>~~ee~~<br>~~eea~~|IFRM= 3xIFnom<br>~~a~~||450|A|
|IFSM<br>~~ee~~<br>~~eea~~|tp= 10 ms, sin 180°, Tj= 25 °C<br>~~a~~||900|A|
|Tj<br>~~eea~~<br>~~Oe~~|~~a~~<br>~~Oe~~||-40 ... 175<br>~~Oe~~|°C<br>~~Oe~~|
|**Module**<br>~~Oe~~<br>~~ee~~|||||
|It(RMS)<br>~~Oe~~<br>~~eeee~~|Tterminal= 80 °C<br>~~Oe~~<br>~~ee~~||200<br>~~Oe~~|A<br>~~Oe~~|
|Tstg<br>~~eeee~~|~~ee~~||-40 ... 125|°C|
|Visol<br>~~eeee~~|AC sinus 50 Hz, t = 1 min<br>~~ee~~<br>~~a~~||4000<br>~~a~~|V<br>~~a~~|



- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|
|---|---|---|---|---|
|VCE(sat)|IC= 150 A<br>VGE= 15 V<br>chiplevel|Tj= 25 °C|1.80<br>2.05|V|
|||Tj= 150 °C|2.20<br>2.40|V|
|VCE0|chiplevel|Tj= 25 °C|0.8<br>0.9|V|
|||Tj= 150 °C|0.7<br>0.8|V|
|rCE|VGE= 15 V<br>chiplevel|Tj= 25 °C|6.67<br>7.67|m|
|||Tj= 150 °C|10.00<br>10.67|m|
|VGE(th)|VGE=VCE, IC= 6 mA||5<br>5.8<br>6.5|V|
|ICES|VGE= 0 V<br>VCE= 1200 V|Tj= 25 °C|2.0|mA|
|||Tj= 150 °C||mA|
|Cies|VCE= 25 V<br>VGE= 0 V|f = 1 MHz|9.3|nF|
|Coes||f = 1 MHz|0.58|nF|
|Cres||f = 1 MHz|0.51|nF|
|QG|VGE= - 8 V...+ 15 V||850|nC|
|RGint|Tj= 25 °C||5.0||



**==> picture [22 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
GAL<br>**----- End of picture text -----**<br>


**© by SEMIKRON** 

**Rev. 2 – 03.09.2013** 

**1** 

**SKM150GAL12T4** 

## **Characteristics** 

**SEMITRANS[®] 2** 

## Fast IGBT4 Modules 

## **SKM150GAL12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- Electronic welders at fsw up to 20 kHz 

- DC/DC – converter 

- Brake chopper 

- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

|td(on)<br>VCC= 600 V<br>IC= 150 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 3400 A/µs<br>di/dtoff= 1750 A/µs<br>Tj= 150 °C<br>180<br>ns<br>tr<br>Tj= 150 °C<br>42<br>ns<br>Eon<br>Tj= 150 °C<br>19.2<br>mJ<br>td(off)<br>Tj= 150 °C<br>410<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>15.8<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 150 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 3400 A/µs<br>di/dtoff= 1750 A/µs<br>Tj= 150 °C<br>180<br>ns<br>tr<br>Tj= 150 °C<br>42<br>ns<br>Eon<br>Tj= 150 °C<br>19.2<br>mJ<br>td(off)<br>Tj= 150 °C<br>410<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>15.8<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 150 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 3400 A/µs<br>di/dtoff= 1750 A/µs<br>Tj= 150 °C<br>180<br>ns<br>tr<br>Tj= 150 °C<br>42<br>ns<br>Eon<br>Tj= 150 °C<br>19.2<br>mJ<br>td(off)<br>Tj= 150 °C<br>410<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>15.8<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 150 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 3400 A/µs<br>di/dtoff= 1750 A/µs<br>Tj= 150 °C<br>180<br>ns<br>tr<br>Tj= 150 °C<br>42<br>ns<br>Eon<br>Tj= 150 °C<br>19.2<br>mJ<br>td(off)<br>Tj= 150 °C<br>410<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>15.8<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 150 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 3400 A/µs<br>di/dtoff= 1750 A/µs<br>Tj= 150 °C<br>180<br>ns<br>tr<br>Tj= 150 °C<br>42<br>ns<br>Eon<br>Tj= 150 °C<br>19.2<br>mJ<br>td(off)<br>Tj= 150 °C<br>410<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>15.8<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|
|---|---|---|---|---|
|tr||Tj= 150 °C|42|ns|
|Eon||Tj= 150 °C|19.2|mJ|
|td(off)<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|410|ns|
|tf<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|72|ns|
|Eoff<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|15.8|mJ|
|Rth(j-c)<br>~~ee~~<br>~~pf~~|per IGBT<br>~~ee~~<br>~~pf oF~~||0.19|K/W|
|**Inverse diode**<br>~~ee~~<br>~~pf oF~~|||||
|VF= VEC<br>~~pf~~|IF= 150 A<br>VGE= 0 V<br>chiplevel<br>~~pf oF~~|Tj= 25 °C<br>~~F~~|2.14<br>2.46|V|
|||Tj= 150 °C|2.07<br>2.38|V|
|VF0<br>~~e~~|chiplevel<br>~~ee~~|Tj= 25 °C<br>~~ee~~|1.3<br>1.5<br>|V<br>|
|~~e~~||Tj= 150 °C<br>~~ee~~|0.9<br>1.1<br>|V<br>|
|rF<br>~~e~~|chiplevel<br>~~ee~~|Tj= 25 °C<br>~~eea~~|5.6<br>6.4<br>~~a~~|m<br>~~a~~|
|~~e~~||Tj= 150 °C<br>~~eea~~|7.8<br>8.5<br>~~a~~<br>~~ee~~|m<br>~~a~~<br>~~ee~~|
|IRRM<br>~~e~~<br>~~ppp~~<br>~~——~~|IF= 150 A<br>di/dtoff= 3100 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~ee ~~<br>~~ppp~~<br>~~——~~|Tj= 150 °C<br>~~eea~~<br>~~ppp~~<br>~~——~~|120<br>~~a~~<br>~~ee~~<br>~~ppp~~|A<br>~~a~~<br>~~ee~~<br>~~ppp~~|
|Qrr<br>~~e~~<br>~~ppp~~<br>~~——~~||Tj= 150 °C<br> ~~ee~~<br>~~ppp~~<br>~~——~~|31.3<br><br>~~ppp~~|µC<br><br>~~ppp~~|
|Err<br>~~ppp~~<br>~~——~~||Tj= 150 °C<br>~~ppp~~<br>~~——~~|13<br>~~ppp~~|mJ<br>~~ppp~~|
|Rth(j-c)<br>~~ppp~~<br>~~——~~|per diode<br>~~ppp~~<br>~~a~~<br>~~——~~||0.31<br>~~ppp~~<br>~~a~~|K/W<br>~~ppp~~<br>~~a~~|
|**Freewheeling diode**<br>~~——~~|||||
|VF= VEC<br>~~——~~<br>~~a~~|IF= 150 A<br>VGE= 0 V<br>chiplevel<br>~~——~~<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~——~~<br>~~a~~|2.14<br>2.46<br>~~pf~~|V<br>~~pf~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~|2.07<br>2.38<br>~~pf~~|V<br>~~pf~~|
|VF0<br>~~a~~<br>~~—~~|chiplevel<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|1.3<br>1.5<br>~~pf~~<br>~~a~~|V<br>~~pf~~<br>~~a~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|0.9<br>1.1<br>~~pf~~<br>~~a~~|V<br>~~pf~~<br>~~a~~|
|rF<br>~~a~~<br>~~—~~|chiplevel<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|5.6<br>6.4<br>~~pf~~<br>~~a~~|m<br>~~pf~~<br>~~a~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|7.8<br>8.5<br>~~pf~~<br>~~a~~|m<br>~~pf~~<br>~~a~~|
|IRRM<br>~~a~~<br>~~—~~<br>~~-—~~|IF= 150 A<br>di/dtoff= 3100 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~a~~<br>~~Pf~~<br>|Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~<br>~~a~~<br>~~ee~~|120<br>~~pf~~<br>~~a~~<br>~~a~~<br>~~ee~~|A<br>~~pf~~<br>~~a~~<br>~~a~~|
|Qrr<br>~~—~~<br>~~-—~~||Tj= 150 °C<br>~~Pf~~<br>~~a~~<br>~~ee~~|31.3<br>~~a~~<br>~~ee~~|µC<br>~~a~~|
|Err<br>~~—~~<br>~~-—~~||Tj= 150 °C<br>~~Pf~~<br>~~a~~<br>~~ee~~|13<br>~~a~~<br>~~ee~~|mJ<br>~~a~~<br>~~|~~|
|Rth(j-c)<br>~~-—~~|per Diode<br>~~a~~<br>~~ee~~<br>~~a~~||0.31<br>~~a~~<br>~~ee~~<br>~~a~~|K/W<br>~~a~~<br>~~|~~<br>~~a~~|
|**Module**<br>~~-— a~~<br>~~Ce~~|||||
|LCE|||30|nH|
|RCC'+EE'|terminal-chip<br>~~ed~~|TC= 25 °C|0.65|m|
|~~ee~~||TC= 125 °C<br>~~ed~~|1<br>~~ee~~|m|
|Rth(c-s)<br>~~|~~<br>~~ee~~<br>~~ee~~|per module<br>~~ed~~<br>~~ee~~||0.04<br>0.05<br>~~ee~~<br>~~ee~~|K/W<br>~~ee~~|
|Ms<br>~~ee~~<br>~~ee~~<br>~~po~~|to heat sink M6<br>~~ed~~<br>~~ee~~<br>~~po~~||3<br>5<br>~~ee~~<br>~~ee~~|Nm<br>~~ee~~|
|Mt<br>~~ee~~<br>~~ee~~<br>~~po~~|~~ed~~<br>~~ee~~<br>~~po~~|to terminals M5<br>~~ed~~<br>~~ee~~|2.5<br>5<br>~~ee~~<br>~~ee~~|Nm<br>~~ee~~|
|~~ee~~<br>~~po~~||~~ee ~~|~~ee ~~|Nm<br> ~~ee~~|
|w<br>~~po~~|~~po~~||160|g|



**GAL** ~~fa LT~~ **2 Rev. 2 – 03.09.2013 © by SEMIKRON** 

**SKM150GAL12T4** 

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3: Typ. turn-on /-off energy = f (IC) 

Fig. 5: Typ. transfer characteristic 

Fig. 2: Rated current vs. temperature IC = f (TC) 

Fig. 4: Typ. turn-on /-off energy = f (RG) 

Fig. 6: Typ. gate charge characteristic 

**© by SEMIKRON** 

**Rev. 2 – 03.09.2013** 

**3** 

## **SKM150GAL12T4** 

Fig. 7: Typ. switching times vs. IC 

Fig. 9: Transient thermal impedance 

Fig. 11: CAL diode peak reverse recovery current 

Fig. 8: Typ. switching times vs. gate resistor RG 

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' 

Fig. 12: Typ. CAL diode peak reverse recovery charge 

**© by SEMIKRON** 

**Rev. 2 – 03.09.2013** 

**4** 

**SKM150GAL12T4** 

**==> picture [62 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMITRANS 2<br>GAL<br>**----- End of picture text -----**<br>


This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

~~ee~~ **© by SEMIKRON Rev. 2 – 03.09.2013 5** 



## Links

- [View this product on Novapart](https://novapart.co/products/SKM150GAL12T4/igbt-module-single-232-a-18-v-125-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/semikron/skm150gal12t4/igbt-module-n-ch-1-2kv-232a/dp/2423685)
---

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