# IGBT Module, Half Bridge, 195 A, 1.45 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:2423684/)

**URL**: https://novapart.co/products/SKM145GB066D/igbt-module-half-bridge-195-a-145-v-175-c
**SKU**: SKM145GB066D
**Manufacturer**: SEMIKRON
**Price**: €63.4500
**Stock**: 10+
**Lead Time**: 168 days (indicative)

## Description

Transistor Polarity:Dual N Channel; DC Collector Current:195A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Tran

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 3 [Trench] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual N Channel |
| Dc Collector Current | 195A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 195A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2423684/)

## **SKM 145GB066D** 

|||fi|;||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|Toase= 20°C,|= 20°C,|= 20°C,|= 20°C,|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**IGBT**|||||||||||||
|ae||De oy oe|||le|||T, = 175 °C|T=25°C||||195||||A|
|re;<br>1||a**l** allel|||||||T,<br>=<br>80°C||||150||||A|
|=<br>|||||loRM<br>~~Mes |~~<br>tose||~~|~~|~~|~~|lopm=2Xlonom<br>~~|~~<br>Veg = 360 V; Veg < 15V;|~~|~~<br>T= 150°C|~~|~~|~~|~~|~~|~~|300<br>~~|~~<br>6|~~|~~|~~|~~|~~|~~|A<br>~~|~~<br>us|
|**SEMITRANS® **||**2**|||**Inverse Diode**<br>Vces < 600 V|||||||||||||
|Trench IGBT Modules|||||le|||T,=175°C|T,<br>=<br>25°C<br>T, = 80°C||||150<br>100||||A<br>A|
|||||||||||||||||||
|**SKM 145GB066D**|||||**Module**<br>lesm|||t= 10 ms; sin.|T; = 175°C||||880||||A|
||||||l~RMs)||||||||200||||A|
||||||~~a~~|||||||||||||
||||||Tog||||||||-40... +125||||°C|
||||||Visol|||AC, 1 min.|||||4000||||Vv|
|**Features**||||||||||||||||||
|e Trench = Trenchgate technology|||||**Characteristics**||||Tease|=||25°C,|unless otherwise specified|||||
|* VocE(sat) With positive <br>coefficient||temperature|||**Symbol**<br>**IGBT**||||**Conditions**|||||**min.**|**typ.**|**max.**||||**Units**|
|°rarcapability, self<br>~~g~~<br>~~Cc~~|||||~~Veen~~<br>logs|||~~Vee = Vee: bo = 2.4 mA~~<br>Vee=OV.Vce=Vceg|~~=~~25°C|||~~5~~|~~58~~<br>0,08|~~65~~<br>0,25|~~Vv~~<br>| mA|||
|**Typical Applications***|||||VoE0||||T, = 25°C||||0,9|1|||Vj|
|e AC inverter Drives|||||||||T, = 150 °C||||0,85|0,9|||V|
|e« UPS|||||Tor|||Voge = 15V|T, =25°C||||3,7|6|||mQ|
|e Electronicwelders|||||||||T, = 150°C||||5,7|8|||mQ|
|**Remarks**<br>-Casetemperature|_<br>limited|limitedtoT,|T,=||VoE(saty<br>~~;~~|||lonom = 150A, Vee = 15V|T= 25°C opintey,<br>T,~~= 150°C,~~<br>j<br>chiplev.||||1,45<br>~~1,7~~<br>~~555~~|1,9<br>~~2,1~~|||7<br>~~Vv~~<br>~~—~~|



**GB** 

© by SEMIKRON 

06-10-2009 NOS 

1 

**SKM 145GB066D** 

**==> picture [362 x 36] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Characteristics|
|Symbol|Conditions|min.|typ.|max.|Units|
|Inverse Diode|

**----- End of picture text -----**<br>


## **SEMITRANS[®] 2** 

**Module** 

## Trench IGBT Modules 

**SKM 145GB066D** 

## **Features** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. 

## **Typical Applications*** 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 

## **Remarks** 

**==> picture [16 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
GB<br>**----- End of picture text -----**<br>


© by SEMIKRON 

06-10-2009 NOS 

2 

## **SKM 145GB066D** 

|Ai<br>——|i||**Zth**<br>**Symbol**|**Conditions**|**Values**|**Units**|
|---|---|---|---|---|---|---|
|—>?|||**Zth(j-c)l**<br>R,|i=|220|mk/W|
|P<br>,<br>dit<br>he|||R;<br>R;<br>R;<br>tau,<br>tau,<br>tau,|i=2<br>i=3<br>i=4<br>i=<br>i=2<br>i=3|60<br>16,5<br>3,5<br>0,0447<br>0,0223<br>0,0015|mk/W<br>mk/W<br>mk/W<br>s<br>s<br>s|
|**SEMITRANS® 2**|||**Zth(j-c)D**<br>tau,<br>R;|i=4<br>i=|0,0002<br>330|s<br>mk/W|
|Trench IGBT Modules|||R,<br>R;|i=2<br>i=3|137<br>28|mk/W<br>mk/W|
||||R;|i=4|5|mk/W|
|**SKM 145GB066D**|||tau,<br>tau,<br>tau,|i=<br>i=2<br>i=3|0,05<br>0,0129<br>0,002|s<br>s<br>s|



## **Features** 

## **Typical Applications*** 

## **Remarks** 

**==> picture [16 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
GB<br>**----- End of picture text -----**<br>


~~LT~~ 3 06-10-2009 NOS © by SEMIKRON 

**SKM 145GB066D** 

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3 Typ. turn-on /-off energy = f (IC) 

Fig. 5 Typ. transfer characteristic 

Fig. 2 Rated current vs. temperature IC = f (TC) 

Fig. 4 Typ. turn-on /-off energy = f (RG) 

Fig. 6 Typ. gate charge characteristic 

~~ST~~ 4 06-10-2009 NOS © by SEMIKRON 

## **SKM 145GB066D** 

Fig. 7 Typ. switching times vs. IC 

Fig. 9 Transient thermal impedance of IGBT and Diode 

Fig. 11Typ. CAL diode peak reverse recovery current 

Fig. 8 Typ. switching times vs. gate resistor RG 

Fig. 10 CAL diode forward characteristic 

Fig. 12 Typ. CAL recovered charge 

© by SEMIKRON 

06-10-2009 NOS 

5 

**SKM 145GB066D** 

UL recognized, file no. E 63 532 

~~LT~~ 6 06-10-2009 NOS © by SEMIKRON 



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- [Supplier page](https://es.farnell.com/semikron/skm145gb066d/igbt-module-dual-n-ch-600v-195a/dp/2423684)
---

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