SKKT 570/16 E

**SKKT 570/16 E** ~~ee~~ 

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|Absolute Maximum Ratings|
|Symbol|Conditions|Values|Unit|
|Chip|
|IT(AV)|Tc = 85 °C|570|A|
|sinus 180°|
|Tc = 100 °C|435|A|
|ITRMS|continuous operation|1000|A|
|ITSM|10 ms|Tj = 25 °C|pf|19000|A|
|Tj = 135 °C|15500|A|
|i|[2]|t|Tj = 25 °C|1805000|A²s|
|10 ms|
|SEMIPACK|[®]|5|Tj = 135 °C|1201250|A²s|
|VRSM|1700|V|
|VRRM|1600|V|
|Thyristor Modules|VDRM|1600|V|
|a|
|a|(di/dt)cr|Tj = 135 °C|250|A/µs|
|SKKT 570/16 E|a|(dv/dt)cr|Tj = 135 °C|1000|V/µs|
|a|Tj|-40 ... 135|°C|
|Module|
|Be|
|Features|Tstg|-40 ... 125|°C|
|•|Heat transfer through aluminium nitride|Visol|1 min|3000|V|
|a.c.; 50 Hz; r.m.s.|
|•|Precious metal pressure contacts for ceramic isolated metal baseplate|aPp oy|1 s|fe|3600|V|
|high reliability|
|Characteristics|
|•|Thyristor with amplifying gate|
|•|UL recognized, file no. E 63 532|Symbol|Conditions|min.|typ.|max.|Unit|
|Typical Applications*|Chip|
|•|AC motor softstarters|VT|Tj = 25 °C, IT = 1700 A|1.44|V|
|•|Input converters for AC inverter drives|i|VT(TO)|Tj = 135 °C|0.78|V|
|•|DC motor control (e.g. for machine|a|rT|Tj = 135 °C|0.32|mΩ|
|tools)|
|•|Temperature control (e.g. for ovens,|a|IDD;IRD|Tj = 135 °C, VDD = VDRM; VRD = VRRM|225|mA|
|chemical, processes)|a|tgd|Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs|1|µs|
|•|Professionals light dimming (studios,|a|tgr|VD = 0.67 * VDRM|2|µs|
|theaters)|tq|Tj = 135 °C|200|µs|
|i|IH|Tj = 25 °C|150|500|mA|
|a|IL|Tj = 25 °C, RG = 33 Ω|300|2000|mA|
|a|VGT|Tj = 25 °C, d.c.|3|V|
|a|IGT|Tj = 25 °C, d.c.|200|mA|
|a|VGD|Tj = 135 °C, d.c.|0.25|V|
|IGD|Tj = 135 °C, d.c.|10|mA|
|i|Rth(j-c)|continuous DC|per chip|0.069|K/W|
|per module|0.034|K/W|
|Rth(j-c)|per chip|0.072|K/W|
|sin. 180°|
|per module|0.036|K/W|
|ee|ed|
|Rth(j-c)|per chip|0.077|K/W|
|rec. 120°|
|||ee|ee|
|a|per module|0.038|K/W|
|Module|
|||
|a|Rth(c-s)|chip|0.02|K/W|
|a|module|0.01|K/W|
|Ms|to heatsink M6|4.25|5.75|Nm|
|Mt|to heatsink M10|10.2|13.8|Nm|
|i|
|a|a|5 * 9,81|m/s²|
|w|1400|g|
|SKKT|
|Soy|ie|a|

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~~LT~~ **© by SEMIKRON Rev. 2 – 09.12.2014 1** 

## **SKKT 570/16 E** 

Fig. 1L: Power dissipation per thyristor vs. on-state current 

Fig. 2L: Power dissipation of one module vs. rms current 

Fig. 3L: Power dissipation of two modules vs. direct current 

Fig. 1R: Power dissipation per thyristor vs. ambient temperature 

Fig. 2R: Max. power dissipation of one module vs. case temperature 

Fig. 3R: Power dissipation of two modules vs. case temperature 

**© by SEMIKRON** 

**Rev. 2 – 09.12.2014** 

**2** 

**SKKT 570/16 E** 

Fig. 4L: Power dissipation of three modules vs. direct and rms current 

Fig. 6: Transient thermal impedance vs. time 

Fig. 4R: Power dissipation of three modules vs. case temperature 

Fig. 7: On-state characteristics 

Fig. 8: Surge overload current vs. time 

~~|~~ **© by SEMIKRON Rev. 2 – 09.12.2014 3** 

## **SKKT 570/16 E** 

Fig. 9: Gate trigger characteristics 

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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

**© by SEMIKRON** 

**Rev. 2 – 09.12.2014** 

**4**