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SIZF906BDT-T1-GE3

Dual MOSFET, N Channel, 30 V, 30 V, 257 A, 257 A, 450 µohm

  • Manufacturer: VISHAY
  • Product type: Dual MOSFETs
  • MSL: MSL 2 - 1 year
  • SVHC: Lead (07-Nov-2024)
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen IV Series
  • Qualification: -
  • Transistor Case Style: PowerPAIR
  • Operating Temperature Max: 150°C
  • Power Dissipation N Channel: 83W
  • Power Dissipation P Channel: 83W
  • Drain Source Voltage Vds N Channel: 30V
  • Drain Source Voltage Vds P Channel: 30V
  • Continuous Drain Current Id N Channel: 257A
  • Continuous Drain Current Id P Channel: 257A
  • Drain Source On State Resistance N Channel: 450µohm
  • Drain Source On State Resistance P Channel: 450µohm
Delivery and price
Units per pack 5000
Price 0.613 €
Current stock 10+
Lead time 7 days

Updated at March 23, 2026