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SIZ998DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 2200 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel + Schottky
- Product Range: TrenchFET Series
- Qualification: -
- Transistor Case Style: PowerPAIR
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 32.9W
- Power Dissipation P Channel: 32.9W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 60A
- Continuous Drain Current Id P Channel: 60A
- Drain Source On State Resistance N Channel: 2200µohm
- Drain Source On State Resistance P Channel: 2200µohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.403 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 23, 2026