# Power MOSFET, N Channel, 20 V, 1 A, 0.73 ohm, PowerPAK 0806, Surface Mount

![Product image](https://novapart.co/image/farnell:3929250/)

**URL**: https://novapart.co/products/SIUD402ED-T1-GE3/power-mosfet-n-channel-20-v-1-a-073-ohm-powerpak
**SKU**: SIUD402ED-T1-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0730
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET Series |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | PowerPAK 0806 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1A |
| Drain Source On State Resistance | 0.73ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3929250/)

**SiUD402ED** 

Vishay Siliconix 

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## **N-Channel 20 V (D-S) MOSFET** 

## **FEATURES** 

||**PowerPAK® 0806 Single**|**PowerPAK® 0806 Single**|**PowerPAK® 0806 Single**|**0806 Single**|**0806 Single**||
|---|---|---|---|---|---|---|
|||||D<br>3|||
|0.4 mm|**1**<br>**0.8 mm**<br>||0.**6** **mm**<br>5||1<br>G<br>2<br>S<br>™e?<br>a|||
||Top View|||Bottom View|||
|**Marking Code:**|**Marking Code:**C||||||
|**PRODUCT SUMMARY**<br>VDS (V)|||||20||
|RDS(on)max.|max.()at VGS= 4.5 V|= 4.5 V|||0.73||
|RDS(on)max.|max.()at VGS= 2.5 V|= 2.5 V|||0.87||
|RDS(on)max.<br>RDS(on)max.|max.()at VGS= 1.8 V<br>max.()at VGS= 1.5 V|= 1.8 V<br>= 1.5 V|||1.10<br>1.80||
|Qgtyp.|.(nC)||||0.5||
|ID (A) a|||||1||
|Configuration|||||Single||



## **Marking Code:** C 

- TrenchFET[®] power MOSFET 

- Ultra small 0.8 mm x 0.6 mm outline 

- Ultra thin 0.4 mm max. height 

- 100 % Rg tested 

- Typical ESD protection 2000 V (HBM) 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

D G S N-Channel MOSFET 

- Load switch 

- High speed switching 

- DC/DC converters 

- For smart phones, tablet PCs and mobile computing 

- Small signal switching 

## **ORDERING INFORMATION** 

Package PowerPAK 0806 Lead (Pb)-free and halogen-free SiUD402ED-T1-GE3 

**Note** • The lead finish is NiPdAu and classed as E4 finish 

**ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) ~~**a**~~ **Parameter Symbol Limit Unit** Drain-source voltage VDS 20 V ~~a~~ Gate-source voltage VGS ± 8 TA = 25 °C 1[a] Continuous drain current (TJ = 150 °C) TA = 70 °C ID 0.8[a] TA = 25 °C 0.35[b] ~~|| i|~~ TA = 70 °C 0.28[b] A Pulsed drain current (t = 100 μs) IDM 1.4 ~~eea~~ Continuous source-drain diode current TTAA = 25 °C = 25 °C ~~ee~~ IS 0.37 1[a][b] TA = 25 °C 1.25[a] TA = 70 °C 0.8[a] Maximum power dissipation ~~|~~ PD W TA = 25 °C 0.37[b] ~~| SS~~ TA = 70 °C 0.24[b] ~~Rr~~ Operating junction and storage temperature range TJ, Tstg -55 to +150 °C ~~ee~~ Soldering recommendations (peak temperature)[c] 260 **THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit** Maximum junction-to-ambient[a, d] 80 100 Maximum junction-to-ambient[b, e] t  5 s RthJA 265 335 °C/W 

## **Notes** 

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s c. Refer to IPC/JEDEC[®] (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 °C/W e. Maximum under steady state conditions is 400 °C/W 

S20-0847-Rev. B, 26-Oct-2020 

**1** 

Document Number: 62968 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiUD402ED** 

Vishay Siliconix 

www.vishay.com 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|20|-|-|V|
|VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|18|-|mV/°C|
|VGS(th)temperature coefficient|VGS(th)/TJ||-|-1.9|-||
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.4|-|0.9|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 4.5 V|-|-|± 0.5|μA|
|||VDS= 0 V, VGS= ± 8 V|-|-|± 10||
|Zero gate voltage drain current|IDSS|VDS= 20 V, VGS= 0 V|-|-|1||
|||VDS= 20 V, VGS= 0 V, TJ= 55 °C|-|-|10||
|On-state drain currenta|ID(on)|VDS5 V, VGS= 4.5 V|1|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 4.5 V, ID= 0.2 A|-|0.57|0.73||
|||VGS= 2.5 V, ID= 0.1 A|-|0.67|0.87||
|||VGS= 1.8 V, ID= 0.02 A|-|0.80|1.10||
|||VGS= 1.5 V, ID= 0.01 A|-|0.90|1.80||
|Forward transconductancea|gfs|VDS= 10 V, ID= 0.2 A|-|1.2|-|S|
|**Dynamic** **b**|||||||
|Input capacitance|Ciss|VDS= 10 V, VGS= 0 V, f = 1 MHz|-|16|-|pF|
|Output capacitance|Coss||-|7.5|-||
|Reverse transfer capacitance|Crss||-|3.5|-||
|Total gate charge|Qg|VDS= 10 V, VGS= 8 V, ID= 0.2 A|-|0.75|1.20|nC|
|||VDS= 10 V, VGS= 4.5 V, ID= 0.2 A|-|0.50|0.75||
|Gate-source charge|Qgs||-|0.09|-||
|Gate-drain charge|Qgd||-|0.09|-||
|Gate resistance|Rg|f = 1 MHz|3|24|50||
|Turn-on delay time|td(on)|VDD= 10 V, RL= 50<br>ID 0.2 A, VGEN= 4.5 V, Rg = 1|-|7|15|ns|
|Rise time|tr||-|10|20||
|Turn-off delay time|td(off)||-|23|50||
|Fall time|tf||-|7|15||
|Turn-on delay time|td(on)|VDD= 10 V, RL= 15<br>ID 0.2 A, VGEN= 8 V, Rg= 1|-|5|10||
|Rise time|tr||-|5|10||
|Turn-off delay time|td(off)||-|11|25||
|Fall time|tf||-|5|10||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous source-drain diode current|IS|TC= 25 °C|-|-|1c|A|
|Pulse diode forward current|ISM||-|-|1.4||
|Body diode voltage|VSD|IS= 0.2 A, VGS= 0 V|-|0.8|1.2|V|
|Body diode reverse recovery time|trr|IF= 0.2 A, dI/dt = 100 A/μs, TJ= 25 °C|-|11|25|ns|
|Body diode reverse recovery charge|Qrr||-|3.5|7|nC|
|Reverse recovery fall time|ta||-|5.3|-|ns|
|Reverse recovery rise time|tb||-|5.7|-||



## **Note** 

a. Pulse test; pulse width  300 μs, duty cycle  2 % 

b. Guaranteed by design, not subject to production testing 

c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

S20-0847-Rev. B, 26-Oct-2020 

Document Number: 62968 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiUD402ED** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1.2<br>1.0<br>0.8<br>TJ = 25 °C<br>0.6<br>0.4<br>0.2<br>0<br>0 2 4 6 8 10 12 14<br>VGS - Gate-Source Voltage (V)<br>Gate Current vs. Gate-Source Voltage<br>1.4<br>VGS = 5 V thru 2.5 V<br>1.2<br>VGS = 2 V<br>1.0<br>0.8 VGS = 1.5 V<br>0.6<br>0.4<br>0.2 V GS = 1 V<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>2.0<br>VGS = 1.5 V<br>1.6<br>VGS = 1.8 V<br>1.2<br>VGS = 2.5 V<br>0.8<br>VGS = 4.5 V<br>0.4<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>ID - Drain Current (A)<br> - Gate Current (mA)<br>IGSS<br> - Drain Current (A)<br>ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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10 [-1]<br>10 [-2]<br>10 [-3] TJ = 150 °C<br>10 [-4]<br>10 [-5]<br>TJ = 25 °C<br>10 [-6]<br>10 [-7]<br>10 [-8]<br>0 2 4 6 8 10 12 14<br>VGS - Gate-to-Source Voltage (V)<br>Gate Current vs. Gate-Source Voltage<br>0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>TC = 25 °C<br>0.15<br>0.10 T C = 125 °C<br>0.05 T C  = -55 °C<br>0.00<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>25<br>20<br>Ciss<br>15<br>10<br>Coss<br>5<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance vs. Drain-to-Source Voltage<br> - Gate Current (A)<br>IGSS<br> - Drain Current (A)<br>ID<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


S20-0847-Rev. B, 26-Oct-2020 

Document Number: 62968 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiUD402ED** 

Vishay Siliconix 

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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8<br>6 ID = 0.2 A VDS = 5 V<br>4 V DS  = 10 V<br>VDS = 16 V<br>2<br>0<br>0.0 0.2 0.4 0.6 0.8<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>1<br>TJ = 150 °C<br>TJ = 25 °C<br>0.1<br>0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward Voltage** 

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1.8<br>1.6 VGS = 4.5 V, ID = 0.2 A<br>VGS = 2.5 V, ID = 0.2 A<br>1.4<br>1.2<br>VGS = 1.8 V, 1.5 V,<br>ID = 0.02 A<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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0.6<br>0.5<br>0.4<br>ID = 250 μA<br>0.3<br>0.2<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>Threshold Voltage<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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2.0<br>1.6 I D = 0.2 A<br>1.2<br>TJ = 125 °C<br>0.8<br>TJ = 25 °C<br>0.4<br>0<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

S20-0847-Rev. B, 26-Oct-2020 

Document Number: 62968 

**4** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiUD402ED** 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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10<br>R DS(on)  Limited  a IDM Limited<br>ID(on) Limited<br>1<br>100 μs<br>1 ms<br>0.1 10 ms<br>100 ms, 1 s,  10 s<br>TA = 25  ° C DC<br>BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operating Area (Junction-to-Ambient)[b]** 

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4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>Power (W)<br>**----- End of picture text -----**<br>


**Single Pulse Power, Junction-to-Ambient[b]** 

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1.0<br>0.8<br>0.6<br>Package Limited<br>0.4<br>0.2<br>0.0<br>0 25 50 75 100 125 150<br>TA - Ambient Temperature (°C)<br>Current Derating  [b, c]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TA - Ambient Temperature (°C)<br>Power Derating  [b]<br>Power (W)<br>**----- End of picture text -----**<br>


## **Note** 

- a. VGS > minimum VGS at which RDS(on) is specified 

- b. When mounted on 1" x 1" FR4 with full copper 

- c. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 

S20-0847-Rev. B, 26-Oct-2020 

Document Number: 62968 

**5** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SiUD402ED** 

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**----- Start of picture text -----**<br>
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Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1<br>Duty Cycle = 0.5<br>Notes:<br>0.1 PDM<br>t1<br>0.2 0.05 1. Duty Cycle, D = t2 tt12<br>0.02 3. T2. Per Unit Base = RJM - TA = PDMZthJAthJA [(t)]  = 135 °C/W<br>4. Surface Mounted<br>0.1 Single Pulse<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient  [a]<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1 0.05 PDM<br>0.02 1. Duty Cyt1cle, D =t2 tt 1 2<br>2. Per Unit Base = RthJA = 400 °C/W<br>Single Pulse 3. TJM - TA = PDMZthJA [(t)]<br>4. Surface Mounted<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient  [a]<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Note** 

a. When mounted on 1" x 1" FR4 with minimum copper 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62968._ 

S20-0847-Rev. B, 26-Oct-2020 

Document Number: 62968 

**6** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** Vishay Siliconix 

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www.vishay.com 

## **Case Outline for PowerPAK 0.8 mm x 0.6 mm** 

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D<br>C<br>Pin 1 Indication<br>E<br>Top View Side View<br>A<br>A1<br>L D1<br>b<br>2<br>e 3 E1<br>1<br>K<br>Bottom View<br>**----- End of picture text -----**<br>


|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|A|0.350|0.380|0.400|0.0138|0.0150|0.0157|
|A1|0|-|0.020|0|-|0.0008|
|b|0.120|0.150|0.180|0.0047|0.0059|0.0071|
|C|0.119|0.127|0.135|0.0047|0.0050|0.0053|
|D|0.750|0.800|0.850|0.0295|0.0315|0.0335|
|D1|0.200|0.250|0.300|0.0078|0.0098|0.0118|
|E|0.550|0.600|0.650|0.0217|0.0236|0.0256|
|E1|0.450|0.500|0.550|0.0177|0.0197|0.0217|
|e|0.300|0.350|0.400|0.0118|0.0138|0.0158|
|K|0.150|0.250|0.350|0.0058|0.0098|0.0138|
|L|0.200|0.250|0.300|0.0078|0.0098|0.0118|
|ECN: C13-1574-Rev. A, 23-Dec-13<br>DWG: 6020|||||||
||||||||



Document Number: 64254 

Revision: 23-Dec-13 

**1** 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**PAD Pattern** Vishay Siliconix 

www.vishay.com 

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## **Recommended Land Pattern PowerPAK[®] 0806** 

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0.3 0.8 0.3<br>1<br>3<br>2<br>0.23<br>0.55 0.62<br>0.03<br>0.13<br>0.35 0.54 0.6<br>0.13<br>0.03<br>**----- End of picture text -----**<br>


Revision: 25-Oct-2018 

Document Number: 78035 

**1** 

For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/SIUD402ED-T1-GE3/power-mosfet-n-channel-20-v-1-a-073-ohm-powerpak)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/siud402ed-t1-ge3/mosfet-n-ch-20v-1a-powerpak-0806/dp/3929250)
---

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