# MEMS Oscillator, 200 MHz, SMD, 5mm x 3.2mm, 50 ppm, 3.3 V, SiT9120, LVDS ![Product image](https://novapart.co/image/farnell:2850168RL/) **URL**: https://novapart.co/products/SIT9120AI-2C3-33E200.000000X/mems-oscillator-200-mhz-smd-5mm-x-32mm-50-ppm-33-v **SKU**: SIT9120AI-2C3-33E200.000000X **Manufacturer**: SITIME **Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators **Price**: €2.8900 **Stock**: 100+ **Lead Time**: 2 days (indicative) ## Datasheet πŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:2850168RL/) > **Standard Frequency Differential OscillatorSiT9120** KSiTiime  ~~ee~~ The Smart Timing Choice   The Smart Timing Choice  The Smart Timing Choice ## **Features** - 31 standard frequencies from 25 MHz to 212.5 MHz - LVPECL and LVDS output signaling types - 0.6 ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth ## **Applications** - 10GB Ethernet, SONET, SATA, SAS, Fibre Channel, PCI-Express - Telecom, networking, instrumentation, storage, servers - Frequency stability as low as Β±10 ppm - Industrial and extended commercial temperature ranges - Industry-standard packages: 3.2x2.5, 5.0x3.2 and 7.0x5.0 mmxmm - For any other frequencies between 1 to 625 MHz, refer to SiT9121 and SiT9122 datasheet ## **Electrical Characteristics** |**Parameter and Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**| |---|---|---|---|---|---|---| |**LVPECL and LVDS, Common Electrical Characteristics**
~~Ce~~
~~es~~
~~ns~~||||||| |**Supply Voltage**
~~Ce~~
~~Poe~~|Vdd
~~Ce~~
~~Pe~~
~~Poe~~|2.97
~~Ce~~
~~es~~
~~Pe~~|3.3
~~Ce~~
~~es~~
~~es~~|3.63
~~Ce~~
~~ns~~
~~ns~~|V
~~Ce~~
~~ns~~
~~ns~~|~~Ce~~| |||2.25
~~es~~
~~Pe~~
~~ee~~|2.5
~~es~~
~~es~~
~~ee~~|2.75
~~ns~~
~~ns~~
~~ed~~|V
~~ns~~
~~ns~~|| |||2.25
~~Pe~~
~~ee~~|–
~~es~~
~~ee~~|3.63
~~ns~~
~~ed~~|V
~~ns~~|Termination schemes in Figures 1 and 2 - XX ordering code| |**Output Frequency Range**
~~Poe~~|f
~~Poe~~|25
~~ee~~
~~ee~~|–
~~ee~~
~~ee~~|212.5
~~ed~~
~~ee~~|MHz|See lastpage for list of standard frequencies| |**Frequency Stability**
~~Poe~~|F_stab
~~Poe~~|-10
~~ee ~~
~~ee~~
~~ee~~|–
~~ee ~~
~~ee~~
~~es~~|+10
~~ed~~
~~ee~~
~~ee~~|ppm|Inclusive of initial tolerance, operating temperature, rated power
supply voltage, and load variations| |||-20
~~ee~~
~~ee~~
~~ee~~|–
~~ee~~
~~es~~
~~ee~~|+20
~~ee~~
~~ee~~
~~ee~~|ppm|| |||-25
~~ee~~
~~ee~~
~~ee~~|–
~~es~~
~~ee~~
~~ee~~|+25
~~ee~~
~~ee~~
~~ee~~|ppm|| |||-50
~~ee ~~
~~ee~~
~~nn~~|–
~~ee~~
~~ee~~
~~ID~~|+50
~~ee~~
~~ee~~
~~(R~~|ppm
~~(OO~~|| |**First Year Aging**
~~n~~|F_aging1
~~n~~|-2
~~ee ~~
~~n~~
~~nn~~
~~I~~|–
~~ee~~
~~n~~
~~ID~~
~~I~~|+2
~~ee~~
~~n~~~~**D**~~
~~(R~~
~~GD~~|ppm
~~**D**~~
~~(OO~~
~~(OR~~|25Β°C
~~**D**~~| |**10-year Aging**
~~n~~
~~GD~~|F_aging10
~~n~~
~~GD~~|-5
~~n~~
~~nn~~
~~GD~~
~~I~~|–
~~n~~
~~ID~~
~~GD~~
~~I~~|+5
~~n~~~~**D**~~
~~(R~~
~~GD~~
~~GD~~|ppm
~~**D**~~
~~(OO~~
~~GD~~
~~(OR~~|25Β°C
~~**D**~~
~~GD~~| |**Operating Temperature Range**
~~GD~~
~~pf~~
~~es~~
~~rs~~|T_use
~~GD~~
~~pf~~
~~**rs**~~|-40
~~GD~~
~~I ~~
~~pf~~
~~ee~~
|–
~~GD~~
~~I ~~
~~pf~~
~~ee~~|+85
~~GD~~
~~GD ~~
~~pf~~
~~ed~~|Β°C
~~GD~~
~~(OR~~
~~pf~~|Industrial
~~GD~~| |||-20
~~pf~~
~~ee~~
~~rr~~|–
~~pf~~
~~ee~~
~~**(**~~|+70
~~pf~~
~~ed~~
~~**(**GR~~|Β°C
~~pf~~
~~GR~~|Extended Commercial
~~**(**RO~~| |**Input Voltage High**
~~es~~
~~rs~~|VIH
~~**rs**~~|70%
~~ee~~
~~rr~~
~~nn~~|–
~~ee~~
~~**(**~~|–
~~ed~~
~~**(**GR~~
~~GD~~|Vdd
~~GR~~
~~GD~~|Pin 1, OE or ST
~~**(**RO~~
~~OU~~| |**Input Voltage Low**
~~es ~~
~~rs~~
~~a~~|VIL
~~**rs**~~
~~a~~|–
~~ee ~~
~~rr~~
~~nn~~
~~a~~|–
~~ee ~~
~~**(**~~
~~a~~|30%
~~ed~~
~~**(**GR~~
~~GD~~
~~a~~|Vdd
~~GR~~
~~GD~~
~~a~~|Pin 1, OE or ST
~~**(**RO~~
~~OU~~| |**Input Pull-up Impedance**

~~rs~~
~~a~~|Z_in
~~**rs** ~~
~~a~~|–
~~rr~~
~~nn~~
~~a~~
~~ee~~|100
~~**(**~~
~~a~~
~~es~~|250
~~**(**GR~~
~~GD~~
~~a~~
~~es ns~~|kΞ©
~~GR ~~
~~GD~~
~~a~~
~~ns~~|Pin 1, OE logic high or logic low, or ST
logic high
~~**(**RO~~
~~OU~~| |||2
~~a~~
~~ee~~|–
~~a~~
~~es~~|–
~~a~~
~~es ns~~|MΞ©
~~a~~
~~ns~~|Pin 1, ST
logic low| |**Start-up Time**
~~ee~~|T_start
~~ee~~|–
~~ee ~~
~~ee~~|6
~~es~~
~~ee~~|10
~~es ns~~
~~ee~~|ms
~~ns~~
~~ee~~|Measured from the time Vdd reaches its rated minimum value.| |**Resume Time**
~~ee~~
~~Pee~~|T_resume
~~ee~~
~~Pee~~|–
~~ee~~|6
~~ee~~|10
~~ee~~|ms
~~ee~~|In Standby mode, measured from the time ST
pin crosses
50% threshold.| |**Duty Cycle**
~~ee ~~
~~Pee~~|DC
~~ee ~~
~~Pee~~|45
~~ee ~~|–
~~ee ~~|55
~~ee ~~|%
~~ee~~|Contact SiTime for tighter duty cycle| |**LVPECL, DC and AC Characteristics**
~~Pee~~
~~Bee~~
~~Pe~~||||||| |**Current Consumption**
~~Pe~~|Idd|–|61
~~G(R~~|69
~~G(R~~|mA
~~G(R~~|Excluding Load Termination Current, Vdd = 3.3V or 2.5V| |**OE Disable Supply Current**
~~Pe~~
~~GD~~
~~Poi~~|I_OE
~~GD~~
|–
~~GD~~
~~DG~~|–
~~GD~~
~~G(R~~
~~DG~~|35
~~GD~~
~~G(R~~
~~DG~~|mA
~~GD~~
~~G(R~~
~~QO~~|OE = Low
~~GD~~| |**Output Disable Leakage Current**
~~GD~~
~~Poieee~~|I_leak
~~GD~~
~~eee~~|–
~~GD~~
~~DG~~|–
~~G(R~~
~~GD~~
~~DG~~|1
~~G(R~~
~~GD~~
~~DG~~|A
~~G(R~~
~~GD~~
~~QO~~|OE = Low
~~GD~~| |**Standby Current**
~~Poieee~~|I_std
~~eee~~|–
~~DG~~
~~I~~|–
~~DG~~
~~I GD~~|100
~~DG~~
~~GD~~|A
~~QO~~
~~QO~~|ST
= Low, for all Vdds| |**Maximum Output Current**
~~Poi eee~~
~~RD~~|I_driver
~~eee~~
~~RD~~|–
~~DG~~
~~RD~~
~~I~~
~~I~~|–
~~DG~~
~~RD~~
~~I GD~~
~~I GD~~|30
~~DG~~
~~RD~~
~~GD~~
~~GD~~|mA
~~QO~~
~~RD~~
~~QO~~
~~QO~~|Maximum average current drawn from OUT+ or OUT-
~~RD~~| |**Output High Voltage**
~~RD~~|VOH
~~RD~~|Vdd-1.1
~~I~~
~~RD~~
~~I~~
~~nn~~|–
~~I GD~~
~~RD~~
~~I GD~~
~~ID~~|Vdd-0.7
~~GD~~
~~RD~~
~~GD~~
~~(R~~|V
~~QO~~
~~RD~~
~~QO~~
~~(OO~~|See Figure 1(a)
~~RD~~| |**Output Low Voltage**
~~n~~|VOL
~~n~~|Vdd-1.9
~~I~~
~~n~~
~~nn~~
~~I~~|–
~~I GD~~
~~n~~
~~ID~~
~~I~~|Vdd-1.5
~~GD~~
~~n~~~~**D**~~
~~(R~~
~~GD~~|V
~~QO~~
~~**D**~~
~~(OO~~
~~(OR~~|See Figure 1(a)
~~**D**~~| |**Output Differential Voltage Swing**
~~n~~
~~GD~~
~~Po~~|V_Swing
~~n~~
~~GD~~|1.2
~~n~~
~~nn~~
~~GD~~
~~I~~
~~I I~~|1.6
~~n~~
~~ID~~
~~GD~~
~~I~~
~~I~~|2.0
~~n~~~~**D**~~
~~(R~~
~~GD~~
~~GD~~
~~GD~~|V
~~**D**~~
~~(OO~~
~~GD~~
~~(OR~~
~~(OR~~|See Figure 1(b)
~~**D**~~
~~GD~~| |**Rise/Fall Time**
~~GD~~
~~GD~~
~~Po~~|Tr, Tf
~~GD~~
~~GD~~|–
~~GD~~
~~I ~~
~~GD~~
~~I I~~|300
~~GD~~
~~I ~~
~~GD~~
~~I~~|500
~~GD~~
~~GD ~~
~~GD~~
~~GD~~|ps
~~GD~~
~~(OR~~
~~GD~~
~~(OR~~|20% to 80%, see Figure 1(a)
~~GD~~
~~GD~~| |**OE Enable/Disable Time**
~~GD~~
~~Po~~|T_oe
~~GD~~|–
~~GD~~
~~I I~~
~~ee~~|–
~~GD~~
~~I~~
~~ee~~|115
~~GD~~
~~GD~~
~~(Rn~~|ns
~~GD~~
~~(OR~~
~~(Rn~~|f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3period
~~GD~~
~~(RR~~| |**RMS Period Jitter**
~~Po~~
~~es~~|T_jitt
~~es~~|–
~~I I~~
~~ee~~
~~ee~~|1.2
~~I ~~
~~ee~~
~~GG~~|1.7
~~GD~~
~~(Rn~~
~~GG~~|ps
~~(OR~~
~~(Rn~~
~~GG~~|f = 100 MHz, VDD = 3.3V or 2.5V
~~(RR~~| |||–
~~ee~~
~~ee~~|1.2
~~ee~~
~~GG~~|1.7
~~(Rn~~
~~GG~~|ps
~~(Rn ~~
~~GG~~|f = 156.25 MHz, VDD = 3.3V or 2.5V
~~(RR~~| |||–
~~ee ~~
~~Peres~~|1.2
~~GG~~
~~errr~~|1.7
~~GG~~
~~rs Gs~~|ps
~~GG~~
~~Gs~~|f = 212.5 MHz, VDD = 3.3V or 2.5V| |**RMS Phase Jitter (random)**
~~es~~|T_phj
~~es~~|–
~~Peres~~|0.6
~~errr~~|0.85
~~rs Gs~~|ps
~~Gs~~|f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds| |**LVDS, DC and AC Characteristics**
~~es~~
~~es Peres errr rs Gs~~
~~Ree~~
~~nn~~
~~(OU~~
~~(O~~
~~Re~~||||||| |**Current Consumption**
~~nn~~
~~Re~~|Idd
~~nn~~
|–
~~nn~~
|47
~~nn~~
~~nn~~|55
~~nn~~
~~(OU~~|mA
~~nn~~
~~(OU~~|Excluding Load Termination Current, Vdd = 3.3V or 2.5V
~~nn~~
~~(O~~| |**OE Disable Supply Current**
~~Re~~
~~Pe~~|I_OE
~~nn~~|–
~~nn~~|–
~~nn~~
~~I~~|35
~~(OU~~
~~I~~|mA
~~(OU~~
~~QO~~|OE = Low
~~(O~~
~~QO~~| |**Differential Output Voltage**
~~Re ~~
~~Pe~~|VOD
~~nn~~|250
~~nn~~|350
~~nn~~
~~I~~|450
~~(OU~~
~~I~~|mV
~~(OU~~
~~QO~~|See Figure 2
~~(O~~
~~QO~~| **SiTime Corporation Rev. 1.06** **990 Almanor Avenue, Sunnyvale, CA 94085** **(408) 328-4400** **www.sitime.com** **Revised October 3, 2014** **SiT9120 Standard Frequency Differential Oscillator**  ~~β€”___sitime~~ The Smart Timing Choice   The Smart Timing Choice  The Smart Timing Choice ## **Electrical Characteristics (continued)** |**Parameter and Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**| |---|---|---|---|---|---|---| |**LVDS, DC and AC Characteristics (continued)**||||||| |**Output Disable Leakage Current**|I_leak|–|–|1|A|OE = Low| |**Standby Current**|I_std|–|–|100|A|ST
= Low, for all Vdds| |**VOD Magnitude Change**|VOD|–|–|50|mV|See Figure 2| |**Offset Voltage**|VOS|1.125|1.2|1.375|V|See Figure 2| |**VOS Magnitude Change**|VOS|–|–|50|mV|See Figure 2| |**Rise/Fall Time**|Tr, Tf|–|495|600|ps|20% to 80%, see Figure 2| |**OE Enable/Disable Time**|T_oe|–|–|115|ns|f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3period| |**RMS Period Jitter**|T_jitt|–|1.2|1.7|ps|f = 100 MHz, VDD = 3.3V or 2.5V| |||–|1.2|1.7|ps|f = 156.25 MHz, VDD = 3.3V or 2.5V| |||–|1.2|1.7|ps|f = 212.5 MHz, VDD = 3.3V or 2.5V| |**RMS Phase Jitter (random)**|T_phj|–|0.6|0.85|ps|f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds| **Pin Description Pin Map Functionality** OE Input H or Open: specified frequency output L: output is high impedance **Top View** 1 H or Open: specified frequency output ST Input L: Device goes to sleep mode. Supply current reduces to OE/ST ~~1 6~~ VDD I_std. 2 NC NA No Connect; Leave it floating or connect to GND for better NC ~~2 5~~ OUTheat dissipation 3 GND Power VDD Power Supply Ground GND ~~3 4~~ OUT+ 4 OUT+ Output Oscillator output 5 OUTOutput Complementary oscillator output 6 VDD Power Power supply voltage ~~===~~ **Absolute Maximum** Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. **Parameter Min. Max. Unit Storage Temperature** -65 150 Β°C **VDD** -0.5 4 V **Electrostatic Discharge (HBM)** – 2000 V **Soldering Temperature (follow standard Pb free soldering guidelines)** – 260 Β°C ~~SS~~ **Thermal Consideration**  **JA, 4 Layer Board**  **JC, Bottom Package (Β°C/W) (Β°C/W) 7050, 6-pin** 142 27 **5032, 6-pin** 97 20 **3225, 6-pin** 109 20 ~~a~~ **Environmental Compliance Parameter Condition/Test Method Mechanical Shock** MIL-STD-883F, Method 2002 **Mechanical Vibration** MIL-STD-883F, Method 2007 **Temperature Cycle** JESD22, Method A104 **Solderability** MIL-STD-883F, Method 2003 **Moisture Sensitivity Level** MSL1 @ 260Β°C ~~β€”β€”~~ **Page 2 of 8** **Rev. 1.06** **www.sitime.com** **SiT9120 Standard Frequency Differential Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Waveform Diagrams** **==> picture [306 x 104] intentionally omitted <==** **----- Start of picture text -----**
OUT-
80% 80%
20% 20% VOH
OUT+
VOL
Tr Tf
SN
GND
**----- End of picture text -----**
**Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)** **==> picture [159 x 25] intentionally omitted <==** **----- Start of picture text -----**
V _ Swing
0 V
t
**----- End of picture text -----**
**Figure 1(b). LVPECL Voltage Levels Across Differential Pair** **==> picture [242 x 107] intentionally omitted <==** **----- Start of picture text -----**
OUT-
80% 80%
VOD
20% 20%
OUT+
VOS
Tr Tf
GND
**----- End of picture text -----**
**Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)** **Page 3 of 8** **Rev. 1.06** **www.sitime.com** **SiT9120 Standard Frequency Differential Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Termination Diagrams** ## **LVPECL:** **==> picture [373 x 89] intentionally omitted <==** **----- Start of picture text -----**
VDD
OUT+ Z0 = 50  D+
LVPECL Driver Receiver Device
OUT- Z0 = 50  D-
50  50 
**----- End of picture text -----**
**==> picture [65 x 5] intentionally omitted <==** **----- Start of picture text -----**
VTT = VDD – 2.0 V
**----- End of picture text -----**
**Figure 3. LVPECL Typical Termination** **==> picture [387 x 136] intentionally omitted <==** **----- Start of picture text -----**
VDD VDD= 3.3V => R1 = 100 to 150 
VDD= 2.5V => R1 = 75 
100 nF
OUT+ Z0 = 50  D+
LVPECL Driver Receiver Device
100 nF
OUT- Z0 = 50  D-
R1 R1
50  50 
VTT
**----- End of picture text -----**
**Figure 4. LVPECL AC Coupled Termination** **==> picture [337 x 133] intentionally omitted <==** **----- Start of picture text -----**
VDD = 3.3V => R1 = R3 = 133  and
R2 = R4 = 82 
VDD
VDD = 2.5V => R1 = R3 = 250  and
R2 = R4 = 62.5 
R1 R3
VDD
OUT+ Z0 = 50  D+
LVPECL Driver Receiver Device
OUT- Z0 = 50  D-
R2 R4
**----- End of picture text -----**
**Figure 5. LVPECL with Thevenin Typical Termination** **Page 4 of 8** **Rev. 1.06** **www.sitime.com** **SiT9120 Standard Frequency Differential Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **LVDS:** **==> picture [376 x 87] intentionally omitted <==** **----- Start of picture text -----**
VDD
OUT+ Z0 = 50  D+
LVDS Driver 100  Receiver Device
OUT- Z0 = 50  D-
**----- End of picture text -----**
**Figure 6. LVDS Single Termination (Load Terminated)** **Page 5 of 8** **Rev. 1.06** **www.sitime.com** **SiT9120 Standard Frequency Differential Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Dimensions and Patterns** **==> picture [443 x 445] intentionally omitted <==** **----- Start of picture text -----**
Package Size – Dimensions (Unit: mm) [[1]] Recommended Land Pattern (Unit: mm) [[[2]]]
3.2 x 2.5x 0.75 mm
3.2Β± 0.05 2. 20 2 . 2 5
β€” #6 _β€” #5 #4 #4 #5 #6
YXXXX
1 (U0
#1 #2 #3 #3 #2 #1
0.6
[pee | 0c
0.75Β±0.05 0 .6 5 1 .0 5
5.0 x 3.2 x 0.75 mm
#6 #5 #4 #4 #5 #6
rT 5 254 β€”
YXXXX
#1 #2 #3 #3 #2 #1
PRS | y oo
0.75Β±0.05
β€” OO
7.0 x 5.0x 0.90 mm
7.0 Β±0.10 5. 08
5. 08
#6 #5 #4 #4 #5 #6
[β€” 1. fT I
YXXXX OOO
#1 #2 #3 #3 #2 #1
1.40
1.60
4 [| L I tI [+]
.05
.9
0 6
2.5Β±0 1.
0.7
1.20
0.10 60
5.0Β± 2. 1.10
0
3.8
1.60
0.90 Β±0.10
**----- End of picture text -----**
**Recommended Land Pattern (Unit: mm)**[[[2]]] **==> picture [157 x 106] intentionally omitted <==** **----- Start of picture text -----**
2 . 2 5
+
0c
0 .6 5 1 .0 5
6
1.
1.00
**----- End of picture text -----**
## **Notes:** 1. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of β€œY” will depend on the assembly location of the device. 2. A capacitor of value 0.1 F between Vdd and GND is recommended. **Page 6 of 8** **Rev. 1.06** **www.sitime.com** **==> picture [501 x 460] intentionally omitted <==** **----- Start of picture text -----**
SiT9120
Standard Frequency Differential Oscillator

The Smart Timing Choice 
The Smart Timing Choice
Ordering Information
SiT9120AC -1C2-33E125.000000T
Packaging:
Part Family β€œT”, β€œY”, β€œX”, β€œD”, β€œE”, or β€œG”
β€œSiT9120” Refer to table below for
packing method
Leave Blank for Bulk
Revision Letter
β€œA” is the revision of Silicon Frequency
See supported frequency list
below
Temperature Range
Β° Feature Pin
β€œI” Industrial, -40 to 85 C
β€œC” Extended Commercial, -20 to 70Β°C β€œE” for Output Enable
β€œS” for Standby
Signalling Type Voltage Supply
β€œ1” = LVPECL β€œ25” for 2.5V Β±10%
β€œ2” = LVDS β€œ33” for 3.3V Β±10%
β€œXX” for 2.25V to 3.63V
Package Size Frequency Stability
β€œB” 3.2 x 2.5 mm x mm β€œF” for Β±10 ppm
β€œC” 5.0 x 3.2 mm x mm
β€œ1” for Β±20 ppm
β€œD” 7.0 x 5.0 mm x mm
β€œ2” for Β±25 ppm
SIE β€œ3” for Β±50 ppm
Supported Frequencies
25.000000 MHz 50.000000 MHz 74.175824 MHz 74.250000 MHz 75.000000 MHz 98.304000 MHz 100.000000 MHz 106.250000 MHz
125.000000 MHz 133.000000 MHz 133.300000 MHz 133.330000 MHz 133.333000 MHz 133.333300 MHz 133.333330 MHz 133.333333 MHz
148.351648 MHz 148.500000 MHz 150.000000 MHz 155.520000 MHz 156.250000 MHz 161.132800 MHz 166.000000 MHz 166.600000 MHz
166.660000 MHz 166.666000 MHz 166.666600 MHz 166.666660 MHz 166.666666 MHz 200.000000 MHz 212.500000 MHz
**----- End of picture text -----**
## **Ordering Codes for Supported Tape & Reel Packing Method** |**Device Size**|**8 mm T&R**
**(3ku)**|**8 mm T&R**
**(1ku)**|**8 mm T&R**
**(250u)**|**12 mm T&R**
**(3ku)**|**12 mm T&R**
**(1ku)**|**12 mm T&R**
**(250u)**|**16 mm T&R**
**(3ku)**|**16 mm T&R**
**(1ku)**|**16 mm T&R**
**(250u)**| |---|---|---|---|---|---|---|---|---|---| |7.0 x 5.0 mm|–|–|–|–|–|–|T|Y|X| |5.0 x 3.2 mm|–|–|–|T|Y|X|–|–|–| |3.2 x 2.5 mm|D|E|G|T|Y|X|–|–|–| **Page 7 of 8** **Rev. 1.06** **www.sitime.com** **SiT9120 Standard Frequency Differential Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Revision History** |**Version**|**Release Date**|**Change Summary**| |---|---|---| |1.01|2/20/13|Original| |1.02|11/23/13|Added input specifications, LVPECL/LVDS waveforms, packaging T&R options| |1.03|2/6/14|Added 8mm T&R option| |1.04|3/3/14|Added Β±10 ppm| |1.05|7/23/14|Include Thermal Consideration Table| |1.06|10/3/14|Modified Thermal Consideration values| Β© SiTime Corporation 2014. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. **Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. ## CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. **Page 8 of 8** **Rev. 1.06** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Supplemental Information** The Supplemental Information section is not part of the datasheet and is for informational purposes only. **SiTime Corporation** **990 Almanor Avenue, Sunnyvale, CA 94085** **(408) 328-4400** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** **SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.1** **990 Almanor Avenue, Sunnyvale, CA 94085** **(408) 328-4400** **www.sitime.com Revised October 5, 2013**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** ## **Best Reliability** Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. ## **Why is SiTime Best in Class:** - SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSealβ„’ process, which eliminates foreign particles and improves long term aging and reliability ## **Best Electro Magnetic Susceptibility (EMS)** SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. ## **Why is SiTime Best in Class:** - Internal differential architecture for best common mode noise rejection - Electrostatically driven MEMS resonator is more immune to EMS - World-class MEMS and CMOS design expertise **==> picture [223 x 145] intentionally omitted <==** **----- Start of picture text -----**
Mean Time Between Failure (Million Hours)
SiTime 500
IDT (Fox) 38
SiTime
20X Better
Epson 28
TXC 16
Pericom 14
0 200 400 600
**----- End of picture text -----**
**Figure 1. Reliability Comparison[[1]]** **==> picture [214 x 151] intentionally omitted <==** **----- Start of picture text -----**
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
- 30
- 39 - 40
- 40 - 42 - 43 - 45
- 50
- 60 SiTime
54X Better
- 70 - 73
- 80
- 90
Kyocera Epson TXC CW SiLabs SiTime
Average Spurs (dB)
**----- End of picture text -----**
**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** ## **Best Aging** Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. ## **Best Power Supply Noise Rejection** SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. ## **Why is SiTime Best in Class:** ## **Why is SiTime Best in Class:** - SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability - On-chip regulators and internal differential architecture for common mode noise rejection - Best analog CMOS design expertise - Inherently better immunity of electrostatically driven MEMS resonator **==> picture [191 x 148] intentionally omitted <==** **----- Start of picture text -----**
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
10
8.0
8
SiTime
6 2X Better
4 3.5
3.0
2 1.5
0
1-Year 10-Year
Aging (Β±PPM)
**----- End of picture text -----**
**Figure 2. Aging Comparison[[2]]** **==> picture [220 x 151] intentionally omitted <==** **----- Start of picture text -----**
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
5.0
4.0
3.0
2.0
SiTimeSiTime
1.0 3X Better
0.0
10 100 1,000 10,000
Power Supply Noise Frequency (kHz)
Injected Noise (ps/mv)
Additive Integrated Phase Jitter per mVp-p
**----- End of picture text -----**
**Figure 4. Power Supply Noise Rejection[[4]]** **Silicon MEMS Outperforms Quartz Rev. 1.1** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** ## **Best Vibration Robustness** High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. ## **Why is SiTime Best in Class:** - The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz - Center-anchored MEMS resonator is the most robust design ## **Best Shock Robustness** SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. ## **Why is SiTime Best in Class:** - The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz - Center-anchored MEMS resonator is the most robust design **==> picture [473 x 413] intentionally omitted <==** **----- Start of picture text -----**
Vibration Sensitivity vs. Frequency 16 Differential XO Shock Robustness - 500 g
SiTime TXC Epson Connor Winfield Kyocera SiLabs
14.3
100.00 14
12.6
12
10.00 10
8
SiTime
6
1.00 SiTime 3.9 Up to 25x Better
Up to 30x 4
Better 2.9 2.5
2
0.6
0.10
=S 0 -_
10 100 1000
Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime
Figure 5. Vibration Robustness [[5]] Figure 6. Shock Robustness [[6]]
Data Source: Reliability documents of named companies.
Data source: SiTime and quartz oscillator devices datasheets.
Test conditions for Electro Magnetic Susceptibility (EMS):
β€’ According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
β€’ Field strength: 3V/m
β€’ Radiated signal modulation: AM 1 kHz at 80% depth
β€’ Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
β€’ Antenna polarization: Vertical
β€’ DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
Vibration Sensitivity (ppb/g)
Peak Frequency Deviation (PPM)
**----- End of picture text -----**
## **Notes:** 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): 4. 50 mV pk-pk Sinusoidal voltage. 5. **Devices used in this test:** same as EMS test stated in Note 3. 6. Test conditions for shock test: - MIL-STD-883F Method 2002 - Condition A: half sine wave shock pulse, 500-g, 1ms - Continuous frequency measurement in 100 ΞΌs gate time for 10 seconds - **Devices used in this test:** same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. **Silicon MEMS Outperforms Quartz Rev. 1.1** **www.sitime.com** ## **Document Feedback Form**  The Smart Timing Choice  The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. **==> picture [506 x 528] intentionally omitted <==** **----- Start of picture text -----**
1. Does the Electrical Characteristics table provide complete information? Yes No
If No, what parameters are missing?
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