# MEMS Oscillator, 1 MHz, SMD, 2mm x 1.6mm, 20 ppm, 3.3 V, SiT8924, LVCMOS / LVTTL
**URL**: https://novapart.co/products/SIT8924BM-71-33E-1.000000G/mems-oscillator-1-mhz-smd-2mm-x-16mm-20-ppm-33-v
**SKU**: SIT8924BM-71-33E-1.000000G
**Manufacturer**: SITIME
**Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators
**Price**: €7.6600
**Stock**: 200+
**Lead Time**: 57 days (indicative)
## Description
Frequency Nom:1MHz; Oscillator Case:SMD, 2mm x 1.6mm; Frequency Stability + / -:20ppm; Supply Voltage Nom:3.3V; Product Range:SiT8924 Series; Oscillator Output Compatibility:LVCMOS
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Bis(a,a-dimethylbenzyl) peroxide (27-Jun-2024) |
| Frequency Nom | 1MHz |
| Product Range | SiT8924 |
| Supply Voltage Nom | 3.3V |
| Frequency Stability + / - | 20ppm |
| Operating Temperature Max | 125°C |
| Operating Temperature Min | -55°C |
| Oscillator Case / Package | SMD, 2mm x 1.6mm |
| Oscillator Output Compatibility | LVCMOS / LVTTL |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2850130RL/)
**SiT8924B** Automotive AEC-Q100 Oscillator
## **Features**
- AEC-Q100 with extended temperature range (-55°C to 125°C)
- Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places
- Supply voltage of 1.8V or 2.25V to 3.63V
- Excellent total frequency stability as low as ±20 ppm
## **Applications**
- Automotive, extreme temperature and other high-rel electronics
- Infotainment systems, collision detection devices, and in-vehicle networking
- Powertrain control
- Industry best G-sensitivity of 0.1 PPB/G
- Low power consumption of 3.8 mA typical at 1.8V
- LVCMOS/LVTTL compatible output
- Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm
- RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free
**==> picture [236 x 47] intentionally omitted <==**
## **Electrical Characteristics**
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage.
## **Table 1. Electrical Characteristics**
|**Parameters**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**|
|---|---|---|---|---|---|---|
||||**Frequency Range**||||
|**Output Frequency Range **|f|1|–|110|MHz|Refer toTable 13 and Table 14for a list supported frequencies|
||||**Frequency Stability and Aging**||||
|**Frequency Stability**|F_stab|-20|–|+20|ppm|Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).|
|||-25|–|+25|ppm||
|||-30|–|+30|ppm||
|||-50|–|+50|ppm||
||||**Operating Temperature Range**||||
|**Operating Temperature**
**Range (ambient)**|T_use|-40|–|+85|°C|Industrial, AEC-Q100 Grade 3|
|||-40|–|+105|°C|Extended Industrial, AEC-Q100 Grade 2|
|||-40|–|+125|°C|Automotive, AEC-Q100 Grade 1|
|||-55|–|+125|°C|Extended Temperature,AEC-Q100|
|||**Supply Voltage and Current Consumption**|||||
|**Supply Voltage**|Vdd|1.62|1.8|1.98|V|All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported.|
|||2.25|–|3.63|V||
|**Current Consumption**|Idd|–|4.0|4.8|mA|No load condition,f = 20 MHz,Vdd = 2.25V to 3.63V|
|||–|3.8|4.5|mA|No load condition, f=20 MHz, Vdd=1.8V|
||||**LVCMOS Output Characteristics**||||
|**Duty Cycle**|DC|45|–|55|%|All Vdds|
|**Rise/Fall Time**|Tr, Tf|–|1.5|3|ns|Vdd = 2.25V - 3.63V, 20% - 80%|
|||–|1.3|2.5|ns|Vdd = 1.8V, 20% - 80%|
|**Output High Voltage**|VOH|90%|–|–|Vdd|IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA(Vdd = 1.8V)|
|**Output Low Voltage**|VOL|–|–|10%|Vdd|IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA(Vdd = 1.8V)|
||||**Input Characteristics**||||
|**Input High Voltage**|VIH|70%|–|–|Vdd|Pin 1, OE|
|**Input Low Voltage**|VIL|–|–|30%|Vdd|Pin 1, OE|
|**Input Pull-up Impedence**|Z_in|–|100|–|kΩ|Pin 1,OE logic high or logic low|
||||**Startup and Resume Timing**||||
|**Startup Time**|T_start|–|–|10|ms|Measured from the time Vdd reaches its rated minimum value|
|**Enable/Disable Time**|T_oe|–|–|130|ns|f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles|
|||||**Jitter**|||
|**RMS Period Jitter**|T_jitt|–|1.6|2.5|ps|f = 75 MHz, 2.25V to 3.63V|
|||–|1.9|3.0|ps|f = 75 MHz, 1.8V|
|**RMS Phase Jitter (random)**|T_phj|–|0.5|–|ps|f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz|
|||–|1.3|–|ps|f = 75MHz,Integrationbandwidth = 12 kHzto20MHz|
Rev 1.5
December 14, 2016
www.sitime.com
**SiT8924B** Automotive AEC-Q100 Oscillator
**Table 2. Pin Description**
|**Pin**|**Symbol**||**Functionality**|**Top View**
1
4
OE/NC
VDD
3
2
GND
OUT|
|---|---|---|---|---|
|1|Output
Enable|Output Enable|H[1]: specified frequency output
L: output is high impedance. Only output driver is disabled.||
||No Con-
nect|No Connect|Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 hasnofunction.||
|2|GND|Power|Electrical ground[2]||
|3|OUT|Output|Oscillator output||
|4|VDD|Power|Power supply voltage[2]||
**Figure 1. Pin Assignments**
## **Notes:**
1. In OE mode, a pull-up resistor of 10k
**==> picture [24 x 7] intentionally omitted <==**
**----- Start of picture text -----**
option.
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2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
## **Table 3. Absolute Maximum Limits**
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
|**Parameter**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|
|**Storage Temperature**|-65|150|°C|
|**Vdd**|-0.5|4|V|
|**Electrostatic Discharge**|–|2000|V|
|**Soldering Temperature (follow standard Pb free**
**soldering guidelines)**|–|260|°C|
|**Junction Temperature[3]**|–|150|°C|
## **Note:**
3. Exceeding this temperature for extended period of time may damage the device.
## **Table 4. Thermal Consideration[[4]]**
||θ**JA, 4 Layer Board**
|θ**JA, 2 Layer Board**
|θ**JC, Bottom**
|
|---|---|---|---|
|**Package**||||
||**(°C/W)**|**(°C/W)**|**(°C/W)**|
|7050|142|273|30|
|5032|97|199|24|
|3225|109|212|27|
|2520|117|222|26|
|2016|152|252|36|
## **Note:**
4. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.
**Table 5. Maximum Operating Junction Temperature[[5]]**
|**Max Operating Temperature (ambient)**|**Maximum Operating Junction Temperature**|
|---|---|
|85°C|95°C|
|105°C|115°C|
|125°C|135°C|
## **Note:**
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
## **Table 6. Environmental Compliance**
|**Parameter**|**Condition/Test Method**|
|---|---|
|**Mechanical Shock**|**MIL-STD-883F, Method 2002**|
|**Mechanical Vibration**|**MIL-STD-883F, Method 2007**|
|**Temperature Cycle**|**JESD22, Method A104**|
|**Solderability**|**MIL-STD-883F, Method 2003**|
|**Moisture Sensitivity Level**|**MSL1 @ 260°C**|
Page 2 of 17
Rev. 1.5
www.sitime.com
**SiT8924B** Automotive AEC-Q100 Oscillator
## **Test Circuit and Waveform[[6]]**
**==> picture [236 x 106] intentionally omitted <==**
**----- Start of picture text -----**
Vdd Vout
Test
Point
4 3
Power
Supply 0.1µF 1 2 15pF (including probe
and fixture
capacitance)
Vdd
OE/NC Function 1kΩ
**----- End of picture text -----**
**Figure 2. Test Circuit**
**==> picture [162 x 91] intentionally omitted <==**
**----- Start of picture text -----**
tr tf
80% Vdd
50%
20% Vdd
High Pulse Low Pulse
(TH)
(TL)
Period
**----- End of picture text -----**
**Figure 3. Waveform**
## **Note:**
6. Duty Cycle is computed as Duty Cycle = TH/Period.
## **Timing Diagrams**
**==> picture [160 x 98] intentionally omitted <==**
**----- Start of picture text -----**
Vdd
90% Vdd
[7]
T_start No Glitch
Pin 4 Voltage during start up
CLK Output
HZ
T_start: Time to start from power-off
**----- End of picture text -----**
**Figure 4. Startup Timing (OE Mode)**
**==> picture [140 x 103] intentionally omitted <==**
**----- Start of picture text -----**
Vdd
50% Vdd
T_oe
OE Voltage
CLK Output
HZ
T_oe: Time to re-enable the clock output
**----- End of picture text -----**
**Figure 5. OE Enable Timing (OE Mode Only)**
**==> picture [159 x 104] intentionally omitted <==**
**----- Start of picture text -----**
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to put the output in High Z mode
**----- End of picture text -----**
**Figure 6. OE Disable Timing (OE Mode Only)**
## **Note:**
7. SiT8924 has “no runt” pulses and “no glitch” output during startup or resume.
Page 3 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Performance Plots[[8]]**
**==> picture [218 x 358] intentionally omitted <==**
**----- Start of picture text -----**
1.8 V 2.5 V 2.8 V 3 V 3.3 V
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0 20 40 60 80 100
Frequency (MHz)
Figure 7. Idd vs Frequency
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100
Frequency (MHz)
Idd (mA)
RMS period jitter (ps)
**----- End of picture text -----**
**Figure 9. RMS Period Jitter vs Frequency**
**==> picture [214 x 154] intentionally omitted <==**
**----- Start of picture text -----**
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Rise time (ns)
**----- End of picture text -----**
**Figure 11. 20%-80% Rise Time vs Temperature**
**==> picture [219 x 154] intentionally omitted <==**
**----- Start of picture text -----**
DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7
DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14
DUT15 DUT16 DUT17 DUT18 DUT19 DUT20
25
20
15
10
5
0
-5
-10
-15
-20
-25
-55 -35 -15 5 25 45 65 85 105 125
Temperature (°C)
Frequency (ppm)
**----- End of picture text -----**
**Figure 8. Frequency vs Temperature**
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**----- Start of picture text -----**
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
55
54
53
52
51
50
49
48
47
46
45
0 20 40 60 80 100
Frequency (MHz)
Figure 10. Duty Cycle vs Frequency
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Duty cycle (%)
Fall time (ns)
**----- End of picture text -----**
**Figure 12. 20%-80% Fall Time vs Temperature**
Page 4 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Performance Plots[[8] ]**
**==> picture [446 x 158] intentionally omitted <==**
**----- Start of picture text -----**
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.0 1.0
1.9
0.9
1.8
1.7 0.8
1.6 0.7
1.5
1.4 0.6
1.3 0.5
1.2
0.4
1.1
1.0 0.3
10 20 30 40 50 60 70 80 90 100 110 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz) Frequency (MHz)
IPJ (ps) IPJ (ps)
**----- End of picture text -----**
**Figure 13. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[[9]]**
**Figure 14. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[[9]]**
## **Notes:**
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz.
Page 5 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Programmable Drive Strength**
The SiT8924 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are:
- Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time.
- Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time.
- Ability to drive large capacitive loads while maintaining full swing with sharp edge rates.
For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section: http://www.sitime.com/support/application-notes.
## **EMI Reduction by Slowing Rise/Fall Time**
Figure 15 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period.
One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT8924.
The SiT8924 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time.
## **SiT8924 Drive Strength Selection**
Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage.
**1.** Select the table that matches the SiT8924 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
**2.** Select the capacitive load column that matches the application requirement (5 pF to 60 pF)
**3.** Under the capacitive load column, select the desired rise/fall times.
**4.** The left-most column represents the part number code for the corresponding drive strength.
**5.** Add the drive strength code to the part number for ordering purposes.
## **Calculating Maximum Frequency**
Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as follows:
**==> picture [121 x 24] intentionally omitted <==**
where Trf_20/80 is the typical value for 20%-80% rise/fall time.
## _**Example 1**_
Calculate fMAX for the following condition:
**Figure 15. Harmonic EMI reduction as a Function of Slower Rise/Fall Time**
## **Jitter Reduction with Faster Rise/Fall Time**
Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength.
- Vdd = 1.8V (Table 7)
- Capacitive Load: 30 pF
- Desired Tr/f time = 3 ns (rise/fall time part number code = E)
Part number for the above example:
SiT8924BI **E** 12-18E-66.666660
Drive strength code is inserted here. Default setting is “-”
## **High Output Load Capability**
The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8924 device with default drive strength setting, the typical rise/fall time is 1ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF.
Page 6 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Rise/Fall Time (20% to 80%) vs CLOAD Tables**
## **Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD**
||Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|||
|---|---|---|---|---|---|
|Drive Strength\CLOAD|5pF|15pF|30pF|45pF|60pF|
|L|6.16|11.61|22.00|31.27|39.91|
|A|3.19|6.35|11.00|16.01|21.52|
|R|2.11|4.31|7.65|10.77|14.47|
|B|1.65|3.23|5.79|8.18|11.08|
|T|0.93|1.91|3.32|4.66|6.48|
|E|0.78|1.66|2.94|4.09|5.74|
|U|0.70|1.48|2.64|3.68|5.09|
|F or "-": default|0.65|1.30|2.40|3.35|4.56|
## **Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD**
||Rise/Fall Time Typ(ns)|Rise/Fall Time Typ(ns)|Rise/Fall Time Typ(ns)|||
|---|---|---|---|---|---|
|Drive Strength\CLOAD|5pF|15pF|30pF|45pF|60pF|
|L|3.77|7.54|12.28|19.57|25.27|
|A|1.94|3.90|7.03|10.24|13.34|
|R|1.29|2.57|4.72|7.01|9.06|
|B|0.97|2.00|3.54|5.43|6.93|
|T|0.55|1.12|2.08|3.22|4.08|
|E or "-": default|0.44|1.00|1.83|2.82|3.67|
|U|0.34|0.88|1.64|2.52|3.30|
|F|0.29|0.81|1.48|2.29|2.99|
## **Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD**
||Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|||
|---|---|---|---|---|---|
|Drive Strength\CLOAD|5pF|15pF|30pF|45pF|60pF|
|L|4.13|8.25|12.82|21.45|27.79|
|A|2.11|4.27|7.64|11.20|14.49|
|R|1.45|2.81|5.16|7.65|9.88|
|B|1.09|2.20|3.88|5.86|7.57|
|T|0.62|1.28|2.27|3.51|4.45|
|E or "-": default|0.54|1.00|2.01|3.10|4.01|
|U|0.43|0.96|1.81|2.79|3.65|
|F|0.34|0.88|1.64|2.54|3.32|
**Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD**
||Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|||
|---|---|---|---|---|---|
|Drive Strength\CLOAD|5pF|15pF|30pF|45pF|60pF|
|L|3.60|7.21|11.97|18.74|24.30|
|A|1.84|3.71|6.72|9.86|12.68|
|R|1.22|2.46|4.54|6.76|8.62|
|B|0.89|1.92|3.39|5.20|6.64|
|T or "-": default|0.51|1.00|1.97|3.07|3.90|
|E|0.38|0.92|1.72|2.71|3.51|
|U|0.30|0.83|1.55|2.40|3.13|
|F|0.27|0.76|1.39|2.16|2.85|
## **Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD**
||Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|Rise/Fall Time Typ (ns)|||
|---|---|---|---|---|---|
|Drive Strength \|5pF|15pF|30pF|45pF|60pF|
|L|3.39|6.88|11.63|17.56|23.59|
|A|1.74|3.50|6.38|8.98|12.19|
|R|1.16|2.33|4.29|6.04|8.34|
|B|0.81|1.82|3.22|4.52|6.33|
|T or "-": default|0.46|1.00|1.86|2.60|3.84|
|E|0.33|0.87|1.64|2.30|3.35|
|U|0.28|0.79|1.46|2.05|2.93|
|F|0.25|0.72|1.31|1.83|2.61|
Page 7 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Pin 1 Configuration Options (OE or NC)**
Pin 1 of the SiT8924 can be factory-programmed to support two modes: Output Enable (OE) or No Connect (NC).
In addition, the SiT8924 supports “no runt” pulses and “no glitch” output during startup or when the device output driver is enabled as shown in the waveform captures in Figure 16 and Figure 17.
## **Output Enable (OE) Mode**
In the OE mode, applying logic low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1µs.
## **No Connect (NC) Mode**
In the NC mode, the device always operates in its normal mode and output the specified frequency regardless of the logic level on pin 1.
Table 12 below summarizes the key relevant parameters in the operation of the device in OE or NC mode.
**Figure 16. Startup Waveform vs. Vdd**
## **Table 12. OE vs. NC**
||OE|NC|
|---|---|---|
|Active current 20 MHz(max, 1.8V)|4.5 mA|4.5 mA|
|OE disable current(max. 1.8V)|3.8 mA|N/A|
|OE enable time at 110 MHz(max)|130 ns|N/A|
|Output driver in OE disable|High Z|N/A|
## **Output on Startup and OE Enable**
The SiT8924 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or when the output driver is enabled.
**Figure 17. Startup Waveform vs. Vdd (Zoomed-in View of Figure 16)**
Page 8 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Dimensions and Patterns**
**==> picture [505 x 596] intentionally omitted <==**
**----- Start of picture text -----**
Package Size – Dimensions (Unit: mm) [[10]] Recommended Land Pattern (Unit: mm) [[11]]
2.0 x 1.6 x 0.75 mm
2.5 x 2.0 x 0.75 mm
2.5 ± 0.05
#4 #3 #3 1. 00 #4 1.9
YXXXX
#1 #2 #2 #1
0.75
1.1
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05 2.1 2 .2
#4 #3 #3 #4
YXXXX
#1 #2 #2 #1
0.9
1 .4
5.0 x 3.2 x 0.75 mm
2 .54
5.0 ± 0.05 2. 39
#4 #3 #3 #4
YXXXX
#1 #2 #2 #1
1.15
1 .5
0.05 1
2.0 ± 1. 0.5 5
1.
.0
0.75 ± 0.05 1
0.05
0.9 .9
1
2.5 ±
0.7
2
1.
0.75 ± 0.05
0.8
0.05 2
3.2 ± 1.1 2.
1.6
0.75 ± 0.05
**----- End of picture text -----**
Page 9 of 17
Rev. 1.5
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Dimensions and Patterns**
**==> picture [505 x 163] intentionally omitted <==**
**----- Start of picture text -----**
Package Size – Dimensions (Unit: mm) [[10]] Recommended Land Pattern (Unit: mm) [[11]]
7.0 x 5.0 x 0.90 mm
5.08 5 .08
7.0 ± 0.05
YXXXX
1.4
2.2
2.6 81
3.
5.0 ± 0.05
1.1 0
2.
0.90 ± 0.10
**----- End of picture text -----**
## **Notes:**
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
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**SiT8924B** Automotive AEC-Q100 Oscillator
## **Ordering Information**
**The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator.**
## SiT8924BA -12-18E -66.666666D
**==> picture [306 x 230] intentionally omitted <==**
**----- Start of picture text -----**
Part Family Packing Method
“SiT8924” “T”: 12 mm Tape & Reel, 3ku reel
“Y”: 12 mm Tape & Reel, 1ku reel
Revision Letter “D”: 8 mm Tape & Reel, 3ku reel
“B” is the revision “E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
Temperature Range
“I” Industrial -40ºC to 85ºC Frequency
“E” Ext. Industrial -40ºC to 105ºC Refer to the Supported
Frequencies Tables below
“A” Automotive -40ºC to 125ºC
“M” Automotive -55ºC to 125ºC Feature Pin
“E” for Output Enable
Output Drive Strength “N” for No Connect
“–” Default (datasheet limits)
See Tables 7 to 11 for rise/fall Supply Voltage [[12]]
times
“18” for 1.8V ±10%
“L” “T” “25” for 2.5V ±10%
“A” “E” “28” for 2.8V ±10%
“R” “U” “30” for 3.0V ±10%
“B” “F”
“33” for 3.3V ±10%
“XX” for 2.5V -10% to 3.3V +10%
Package Size
“7” 2.0 x 1.6 mm Frequency Stability
“1” 2.5 x 2.0 mm “1” for ±20 ppm
“2” 3.2 x 2.5 mm “2” for ±25 ppm
“3” 5.0 x 3.2 mm “8” for ±30 ppm
“8” 7.0 x 5.0 mm “3” for ±50 ppm
**----- End of picture text -----**
## **Note:**
12. The voltage portion of the SiT8924 part number consists of two characters that denote the specific supply voltage of the device. The SiT8924 supports either 1.8V ±10% or any voltage between 2.25V and 3.62V. In the 1.8V mode, one can simply insert 18 in the part number. In the 2.5V to 3.3V mode, two digits such as 18, 25 or 33 can be used in the part number to reflect the desired voltage. Alternatively, “XX” can be used to indicate the entire operating voltage range from 2.25V to 3.63V.
## **Table 13. Supported Frequencies**
## **(-40°C to +85°C)[[13] ]**
|**Frequency Range**|**Frequency Range**|
|---|---|
|**Min.**|**Max.**|
|1.000000 MHz|110.000000 MHz|
## **Table 14. Supported Frequencies (-40°C to +105°C or -40°C to +125°C)[[13, 14] ]**
**Table 15. Supported Frequencies (-55°C to +125°C)[[13, 14] ]**
|**Table 14. Supported Frequencies**
**(-40°C to +105°C or -40°C to +125°C)[13, 14]**|**Table 14. Supported Frequencies**
**(-40°C to +105°C or -40°C to +125°C)[13, 14]**||**Table 15. Supported Frequencies**
**(-55°C to +125°C)[13, 14]**|**Table 15. Supported Frequencies**
**(-55°C to +125°C)[13, 14]**|
|---|---|---|---|---|
|**Frequency Range**|||**Frequency Range**||
|**Min.**|**Max.**||**Min.**|**Max.**|
|1.000000 MHz|61.222999 MHz||1.000000 MHz|61.222999 MHz|
|61.974001 MHz|69.795999 MHz||61.974001 MHz|69.239999 MHz|
|70.485001 MHz|79.062999 MHz||70.827001 MHz|78.714999 MHz|
|79.162001 MHz|81.427999 MHz||79.561001 MHz|80.159999 MHz|
|82.232001 MHz|91.833999 MHz||80.174001 MHz|80.779999 MHz|
|92.155001 MHz|94.248999 MHz||82.632001 MHz|91.833999 MHz|
|94.430001 MHz|94.874999 MHz||95.474001 MHz|96.191999 MHz|
|94.994001 MHz|97.713999 MHz||96.209001 MHz|96.935999 MHz|
|98.679001 MHz|110.000000 MHz||99.158001 MHz|110.000000 MHz|
## **Notes:**
13. Any frequency within the min and max values in the above tables are supported with 6 decimal places of accuracy.
14. Please contact SiTime for frequencies that are not listed in the tables above.
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**SiT8924B** Automotive AEC-Q100 Oscillator
**Table 16. Ordering Codes for Supported Tape & Reel Packing Method**
|**Device Size (mm x mm)**|**16 mm T&R (3ku)**|**16 mm T&R (1ku)**|**12 mm T&R (3ku)**|**12 mm T&R (1ku)**|**8 mm T&R (3ku)**|**8 mm T&R (1ku)**|
|---|---|---|---|---|---|---|
|2.0 x 1.6|–|–|–|–|D|E|
|2.5 x 2.0|–|–|–|–|D|E|
|3.2 x 2.5|–|–|–|–|D|E|
|5.0 x 3.2|–|–|T|Y|–|–|
|7.0 x 5.0|T|Y|–|–|–|–|
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**SiT8924B** Automotive AEC-Q100 Oscillator
**Table 17. Additional Information**
|**Document**|**Description**|**Download Link**|
|---|---|---|
|**Time Machine II**|MEMS oscillator programmer|http://www.sitime.com/support/time-machine-oscillator-programmer|
|**Field Programmable**
**Oscillators**|Devices that can be programmable in
the field by Time Machine II|http://www.sitime.com/products/field-programmable-oscillators|
|**Manufacturing Notes**|Tape & Reel dimension, reflow
profile and other manufacturing
related info|http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-for-
sitime-oscillators|
|**Qualification Reports**|RoHS report, reliability reports,
composition reports|http://www.sitime.com/support/quality-and-reliability|
|**Performance Reports**|Additional performance data such as
phase noise, current consumption and
jitter for selected frequencies|http://www.sitime.com/support/performance-measurement-report|
|**Termination Techniques**|Termination design
recommendations|http://www.sitime.com/support/application-notes|
|**Layout Techniques**|Layout recommendations|http://www.sitime.com/support/application-notes|
## **Table 18. Revision History**
|**Revision**|**Release Date**|**Change Summary**|
|---|---|---|
|0.1|05/19/2015|Finalproduction release|
|1.3|03/18/2016|Added the industrial temperature “-40°C to ±85°C” option
Added support for ±20 ppm frequency stability
Added 12 and 16 mm T&R information to Table 16|
|1.5|12/14/2016|Changed Clock Generator to SOT23 Oscillator
Updated logo and company address, other page layout changes|
## **SiTime Corporation** , 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | **Phone:** +1-408-328-4400 | **Fax:** +1-408-328-4439
> © SiTime Corporation 2016-2017. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
> **Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
## CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited.
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**Silicon MEMS Outperforms Quartz**
## **Supplemental Information**
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
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**Silicon MEMS Outperforms Quartz**
## **Silicon MEMS Outperforms Quartz**
## **Best Reliability**
Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology.
## **Why is EpiSeal™ MEMS Best in Class:**
- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability
- World-class MEMS and CMOS design expertise
**==> picture [221 x 115] intentionally omitted <==**
**----- Start of picture text -----**
Reliability (Million Hours)
EpiSeal
1,140
MEMS
IDT 38
EPSN 28
**----- End of picture text -----**
## **Best Electro Magnetic Susceptibility (EMS)**
SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3.
## **Why is EpiSeal MEMS Best in Class:**
- Internal differential architecture for best common mode noise rejection
- Electrostatically driven MEMS resonator is more immune to EMS
**==> picture [203 x 129] intentionally omitted <==**
**----- Start of picture text -----**
TXC EPS CW KYCA SLAB EpiSeal MEMS
100.0
10.0
1.0
0.1
0.0
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity (ppb/g)
**----- End of picture text -----**
**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]**
## **Best Power Supply Noise Rejection**
**Figure 1. Reliability Comparison[[1]]**
## **Best Aging**
Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2.
## **Why is EpiSeal MEMS Best in Class:**
SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4.
## **Why is EpiSeal MEMS Best in Class:**
- On-chip regulators and internal differential architecture for common mode noise rejection
- MEMS resonator is paired with advanced analog CMOS IC
- SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability
- Inherently better immunity of electrostatically driven MEMS resonator
**==> picture [193 x 135] intentionally omitted <==**
**----- Start of picture text -----**
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator Quartz Oscillator
10
8
8
6
4 3.5
3
2 1.5
0
1-Year 10-Year
Aging (± PPM)
**----- End of picture text -----**
**Figure 4. Power Supply Noise Rejection[[4]]**
**Figure 2. Aging Comparison[[2] ]**
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## **Silicon MEMS Outperforms Quartz**
## **Best Vibration Robustness**
High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness.
## **Why is EpiSeal MEMS Best in Class:**
- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz
- Center-anchored MEMS resonator is the most robust design
**Figure 5. Vibration Robustness[[5]]**
## **Best Shock Robustness**
SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6.
## **Why is EpiSeal MEMS Best in Class:**
- The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz
- Center-anchored MEMS resonator is the most robust design
**Figure 6. Shock Robustness[[6]]**
## **Figure labels:**
- TXC = TXC
- Epson = EPSN
- Connor Winfield = CW
- Kyocera = KYCA
- SiLabs = SLAB
- SiTime = EpiSeal MEMS
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## **Silicon MEMS Outperforms Quartz**
## **Notes:**
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
- According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
- Field strength: 3V/m
- Radiated signal modulation: AM 1 kHz at 80% depth
- Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
- Antenna polarization: Vertical
- DUT position: Center aligned to antenna
## **Devices used in this test:**
|**Devices used inthis test: **||||
|---|---|---|---|
|**Label**|**Manufacturer**|**Part Number**|**Technology**|
|EpiSeal MEMS|SiTime|SiT9120AC-1D2-33E156.250000|MEMS + PLL|
|EPSN|Epson|EG-2102CA156.2500M-PHPAL3|Quartz, SAW|
|TXC|TXC|BB-156.250MBE-T|Quartz, 3rdOvertone|
|CW|Conner Winfield|P123-156.25M|Quartz, 3rdOvertone|
|KYCA|AVX Kyocera|KC7050T156.250P30E00|Quartz, SAW|
|SLAB|SiLab|590AB-BDG|Quartz, 3rdOvertone + PLL|
4. 50 mV pk-pk Sinusoidal voltage.
## **Devices used in this test:**
|**Devices used inthis test: **||||
|---|---|---|---|
|**Label**|**Manufacturer**|**Part Number**|**Technology**|
|EpiSeal MEMS|SiTime|SiT8208AI-33-33E-25.000000|MEMS + PLL|
|NDK|NDK|NZ2523SB-25.6M|Quartz|
|KYCA|AVX Kyocera|KC2016B25M0C1GE00|Quartz|
|EPSN|Epson|SG-310SCF-25M0-MB3|Quartz|
5. Devices used in this test:
- same as EMS test stated in Note 3.
6. Test conditions for shock test:
- MIL-STD-883F Method 2002
- Condition A: half sine wave shock pulse, 500-g, 1ms
- Continuous frequency measurement in 100 μs gate time for 10 seconds
## **Devices used in this test:**
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer.
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## Links
- [View this product on Novapart](https://novapart.co/products/SIT8924BM-71-33E-1.000000G/mems-oscillator-1-mhz-smd-2mm-x-16mm-20-ppm-33-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/sitime/sit8924bm-71-33e-1-000000g/mems-osc-aec-q100-1mhz-lvcmos/dp/2850130RL)
---
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