# MEMS Oscillator, 25 MHz, SMD, 2.5mm x 2mm, 20 ppm, 3.3 V, SiT8208, LVCMOS / LVTTL ![Product image](https://novapart.co/image/farnell:2850172RL/) **URL**: https://novapart.co/products/SIT8208AI-G1-33S-25.000000X/mems-oscillator-25-mhz-smd-25mm-x-2mm-20-ppm-33-v **SKU**: SIT8208AI-G1-33S-25.000000X **Manufacturer**: SITIME **Category**: Crystals & Oscillators || Oscillators || MEMS Oscillators **Price**: €1.8500 **Stock**: 500+ **Lead Time**: 2 days (indicative) ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2850172RL/) **SiT8208 Ultra Performance Oscillator** RTiime  ~~ee~~ The Smart Timing ChoiceThe Smart Timing Choice ## **Features** - Any frequency between 1 and 80 MHz accurate to 6 decimal places - 100% pin-to-pin drop-in replacement to quartz-based oscillators ## **Applications** - SATA, SAS, Ethernet, PCI Express, video, WiFi - Computing, storage, networking, telecom, industrial control - Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) - Frequency stability as low as ±10 PPM - Industrial or extended commercial temperature range - LVCMOS/LVTTL compatible output - Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm - Instant samples with Time Machine II and field programmable oscillators - Outstanding silicon reliability of 2 FIT or 500 million hour MTBF - Pb-free, RoHS and REACH compliant - Ultra short lead time ## **Electrical Characteristics[[1]]** **Parameter Symbol Min. Typ. Max. Unit Condition** ~~Ce~~ **Frequency Range** ~~DG~~ **Output Frequency Range** f 1 – 80 MHz ~~|~~ **Frequency Stability and Aging Frequency Stability** F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over **First year Aging** F_aging ~~eeeeesee~~ -1.5-20-25-50 ~~eeeeeeee~~ –––– ~~ee~~ +1.5 ~~eeee~~ +20+25+50 ~~ee~~ PPMPPMPPMPPM ~~eeeeeeee~~ operating temperature, rated power supply voltage and load25°C ~~a~~ **10-year Aging** -5 – +5 PPM 25°C ~~Po a ss CR~~ **Operating Temperature Range Operating Temperature Range** T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial ~~—————————————————————es es Ce~~ **Supply Voltage and Current Consumption Supply Voltage** Vdd ~~ee~~ 1.71 1.8 ~~ee~~ 1.89 ~~ee ee~~ V Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for additional information. ~~ee~~ 2.25 2.5 ~~ee ee~~ 2.75 ~~ee~~ V ~~ee~~ 2.52 2.8 ~~ee ee~~ 3.08 ~~ee~~ V 2.97 3.3 3.63 V **Current Consumption** Idd – 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V – 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V ~~I ee ——————————————ee ee ee~~ **OE Disable Current** I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down ~~ee~~ – – 30 ~~ee~~ mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down ~~eee~~ **Standby Current** I_std – – 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down – – 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down ~~Eee Ce~~ **LVCMOS Output Characteristics** ~~RsGG~~ **Duty CycleRise/Fall Time** ~~GG~~ Tr, TfDC 45– 1.2– 552 ns% 15 pF load, 10% - 90% Vdd **Output Voltage High** VOH 90% – – Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) ~~Oees~~ **Output Voltage Low** ~~ee~~ VOL ~~ee~~ – – ~~se~~ 10% Vdd IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V) ~~|~~ **Input Characteristics Input Voltage High** VIH 70% – – Vdd Pin 1, OE or ST ~~esss~~ **Input Voltage Low** VIL ~~ns~~ – ~~GD~~ – 30% Vdd ~~(~~ Pin 1, OE or ST **Input Pull-up Impedance** Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high ~~re ee~~ 2 ~~—_—E—EEEGR~~ – – MΩ ~~DG~~ Pin 1, ST logic low **Note:** 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. **SiTime Corporation Rev. 1.02** **Sunnyvale, CA 94085** **(408) 328-4400** **990 Almanor Avenue** **www.sitime.com** **Revised June 24, 2013** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Electrical Characteristics[[1] ] (Continued)** |**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Condition**| |---|---|---|---|---|---|---| |**Startup and Resume Timing**||||||| |**Startup Time**|T_start|–|7|10|ms|Measured from the time Vdd reaches its rated minimum value| |**OE Enable/Disable Time**|T_oe|–|–|150|ns|f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles| |**Resume Time**|T_resume|–|6|10|ms|In standby mode, measured from the time ST
pin crosses 50%
threshold. Refer toFigure 5.| |**Jitter**||||||| |**RMS Period Jitter**|T_jitt|–|1.5|2|ps|| |||–|2|3|ps|f = 75 MHz, Vdd = 1.8V| |**RMS Phase Jitter (random)**|T_phj|–|0.5|1|ps|f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz| ## **Note:** 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. |**Pin Configuration**|||| |---|---|---|---| |**Pin**
**Symbol**
**Functionality**
1
OE/ ST
Output
Enable
H or Open[2]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open[2]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2
GND
Power
Electrical ground[3]
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[3]
~~—~~|OE/ST
GND|1
4
3
2
**Top View**|VDD
OUT| |**Notes:**|||| |2. A pull-up resistor of <10 kΩ between OE/ ST
pin and Vdd is recommended in high noise environment.|||| 3. A capacitor of value 0.1 µF between Vdd and GND is recommended. ## **Absolute Maximum** |Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-| |---| |mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.| |**Parameter**
**Min.**
**Max.**
**Unit**
**Storage Temperature**
-65
150
°C
**VDD**
-0.5
4
V
**Electrostatic Discharge**
–
2000
V
**Soldering Temperature (follow standard Pb free soldering guidelines)**
–
260
°C
**Junction Temperature**
–
150
°C
~~SSS~~| |**Thermal Consideration**| |**Package**
**JA, 4 Layer Board**
**(°C/W)**
**JA, 2 Layer Board**
**(°C/W)**
**JC, Bottom**
**(°C/W)**
**7050**
191
263
30
**5032**
97
199
24
**3225**
109
212
27
**2520**
117
222
26
~~—————~~| |**Environmental Compliance**| |**Parameter**
**Condition/Test Method**
**Mechanical Shock**
**MIL-STD-883F, Method 2002**
**Mechanical Vibration**
**MIL-STD-883F, Method 2007**
**Temperature Cycle**
**JESD22, Method A104**
**Solderability**
**MIL-STD-883F, Method 2003**
**Moisture Sensitivity Level**
**MSL1 @ 260°C**
~~—S=~~| **Page 2 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Phase Noise Plot** **==> picture [327 x 243] intentionally omitted <==** **----- Start of picture text -----**
-100
-110
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps
-120
-130
-140
-150
-160
-170
3 4 5 6
10 10 10 10
Frequency Offset (Hz)
Phase Noise (dBc/Hz)
**----- End of picture text -----**
**Figure 1. Phase Noise, 10 MHz, 3.3V, LVCMOS Output** ## **Test Circuit and Waveform** **==> picture [427 x 115] intentionally omitted <==** **----- Start of picture text -----**
Vdd Vout
Test
Point
tr tf
4 3
Power 90% Vdd
Supply 15pF 50%
0.1µF
1 2 (including probe 10% Vdd
and fixture
capacitance) High Pulse Low Pulse
(TH)
(TL)
OE/ST Function
Vdd Period
1k
**----- End of picture text -----**
**Figure 2. Test Circuit** **Figure 3. Waveform** ## **Notes:** 4. Duty Cycle is computed as Duty Cycle = TH/Period. 5. SiT8208 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime. **Page 3 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Timing Diagram** **==> picture [182 x 283] intentionally omitted <==** **----- Start of picture text -----**
90% Vdd, 2.5/2,8/3.3V devices
95% Vdd, 1.8V devices Vdd Pin 4 Voltage
NO Glitch first cycle
T_start
CLK Output
T_start: Time to start from power-off
Figure 4. Startup Timing (OE/ST Mode)
u
Vdd
OE Voltage
50% Vdd
T_OE
CLK Output
Te
JM .
T_OE: Time to re-enable the clock output
**----- End of picture text -----**
**==> picture [122 x 104] intentionally omitted <==** **----- Start of picture text -----**
Vdd ST Voltage
50% Vdd
T_resume
CLK Output
T_resume: Time to resume from ST
**----- End of picture text -----**
**Figure 5. Standby Resume Timing (ST Mode Only)** **==> picture [141 x 104] intentionally omitted <==** **----- Start of picture text -----**
Vdd OE Voltage
50% Vdd
CLK Output
= T_OE
HZ
J U L , ss
T_OE: Time to put the output drive in High Z mode
**----- End of picture text -----**
**Figure 6. OE Enable Timing (OE Mode Only)** **Figure 7. OE Disable Timing (OE Mode Only)** ## **Notes:** 6. SiT8208 supports NO RUNT pulses and No glitches during startup or resume. 7. SiT8208 supports gated output which is accurate within rated frequency stability from the first cycle. **Page 4 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice **Performance Plots** **==> picture [460 x 498] intentionally omitted <==** **----- Start of picture text -----**
3.3V 2.5V 1.8V 3.3V 2.5V 1.8V
40.0 3.0 0
38.0
2.5 0
36.0
34.0 2.0 0
32.0
30.0 1.5 0
28.0
1.0 0
26.0
24.0 0.5 0
22.0
20.0 0.0 0
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
Frequency, MHz Frequency, MHz
ES —-
Figure 8. Idd vs Frequency Figure 9. RMS Period Jitter vs Frequency
3.3 V 2.5V 1.8V 2.5V 3.3V 1.8V
55. 0 1
54. 0 0.9
53. 0 0.8
52. 0 0.7
51. 0 0.6
50. 0 0.5
49. 0 0.4
48. 0
0.3
47. 0
0.2
46. 0
0.1
45. 0
0
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
Frequency, MHz Frequency, MHz
Figure 10. Duty Cycle vs Frequency Figure 11. RMS Phase Jitter vs Frequency
1.8V 2.5V 3.3V 1.8V 2.5V 3.3V
35 2.0
33
1.5
31
1.0
29
27 0.5
25 0.0
-40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80
Temperature, °C Temperature, °C
Idd, mA
RMS Period jitter, ps
Duty cycle, %
RMS Phase jitter, ps
Idd, mA
Rise Time, ns
**----- End of picture text -----**
**Figure 12. Idd vs Temperature, 10 MHz Output** **Figure 13. Rise Time vs Temperature, 75 MHz Output** **Note:** 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. **Page 5 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  —SCSC“‘;CCC The Smart Timing Choice   The Smart Timing Choice  The Smart Timing Choice ## **Programmable Drive Strength** The SiT8208 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: - Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time - Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. - Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Applications Note section; http://www.sitime.com/support/application-notes. ## **EMI Reduction by Slowing Rise/Fall Time** Figure 14 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. **==> picture [231 x 134] intentionally omitted <==** **----- Start of picture text -----**
trise=0.05
trise=0.1
10 trise=0.15
trise=0.2
0 trise=0.25
trise=0.3
-10 trise=0.35
trise=0.4
-20 trise=0.45
-30 Se e t ee ee
-40
SS
-50
-60
-70
-80
1 3 5 7 9 11
Harmonic number
Harmonic amplitude (dB)
**----- End of picture text -----**
**Figure 14. Harmonic EMI reduction as a Function of Slower Rise/Fall Time** ## **Jitter Reduction with Faster Rise/Fall Time** Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to increase rise/fall time (edge rate) of the input clock. Some chipsets would require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The SiT8208SiT8208 provides up to 3 additional high drive strength settings for very fast rise/fall time. Refer to the Rise/Fall Time Tables to determine the proper drive strength. choose to speed up the rise/fall time to 1.41ns by then increasing the drive strength setting on the SiT8208. The SiT8208 can support up to 60 pF or higher in maximum capacitive loads with up to 3 additional drive strength settings. Refer to the Rise/Tall Time Tables to determine the proper drive strength for the desired combination of output load vs. rise/fall time ## **SiT8208 Drive Strength Selection** Tables 1 through 5 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8208 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. ## **Calculating Maximum Frequency** Based on the rise and fall time data given in Tables 1 through 4, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: **==> picture [123 x 28] intentionally omitted <==** ## _**Example 1**_ Calculate fMAX for the following condition: - Vdd = 1.8V (Table 1) - Capacitive Load: 30 pF - Desired Tr/f time = 3 ns (rise/fall time part number code = G) Part number for the above example: SiT8208AI **G** G2-18E-55.500000 Drive strength code is inserted here. Default setting is “-” ## **High Output Load Capability** The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8208 device with default drive strength setting, the typical rise/fall time is 1.15ns for 15 pF output load. The typical rise/fall time slows down to 2.72ns when the output load increases to 45 pF. One can **Page 6 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  ~~a~~ The Smart Timing ChoiceThe Smart Timing Choice ## **Rise/Fall Time (10% to 90%) vs CLOAD Tables** |**Rise/Fall Time Typ (ns)**
~~ee~~|**Rise/Fall Time Typ (ns)**
~~ee~~|**Rise/Fall Time Typ (ns)**
~~ee~~|**Rise/Fall Time Typ (ns)**
~~ee~~|**Rise/Fall Time Typ (ns)**
~~ee~~|**Rise/Fall Time Typ (ns)**
~~ee~~| |---|---|---|---|---|---| |**Drive Strength \ CLOAD**
~~es~~
~~ee~~
~~ee~~|**5 pF**
~~es es~~|**15 pF**
~~es es~~|**30 pF**
~~es~~|**45 pF**|**60 pF**| |**L**
~~es ~~
~~ee~~
~~ee~~
~~ee~~|12.45
~~es es~~
~~es~~|17.68
~~es es~~
~~es~~|19.48
~~es~~
~~es~~|46.21
~~es~~|57.82| |**A**
~~ee~~
~~ee~~
~~ee~~
~~ee~~|6.50
~~es~~
~~es~~|10.27
~~es~~
~~es~~|16.21
~~es~~
~~es~~|23.92
~~es~~|30.73| |**R**
~~ee~~
~~ee~~
~~ee~~
~~es~~|4.38
~~es~~
~~es~~|7.05
~~es~~
~~es~~|11.61
~~es~~
~~es~~|16.17
~~es~~|20.83| |**B**
~~ee~~
~~ee~~
~~es~~
~~es~~|3.27
~~es~~
~~es Ps~~
|5.30
~~es~~
~~Ps~~
|8.89
~~es~~
~~(es~~
|12.18
~~es~~|15.75| |**S**
~~ee~~
~~es~~
~~es~~
~~es~~|2.62
~~es Ps~~
~~es~~
|4.25
~~Ps ~~
~~es~~
|7.20
~~(es~~
|9.81|12.65| |**D**
~~es~~
~~es Re Gs~~
~~es~~
~~ee~~|2.19
~~es~~
~~Re Gs~~|3.52
~~es~~
~~Re Gs Gs~~|6.00
~~Gs~~|8.31|10.59| |**T**
~~es Re Gs~~
~~es~~
~~ee~~
~~ee~~|1.76
~~Re Gs~~
~~ee~~|3.01
~~Re Gs Gs~~|5.14
~~Gs~~
~~Gs~~|7.10|9.15| |**E**
~~es~~
~~ee~~
~~ee~~
~~es~~|1.59
~~ee~~
~~es~~
|2.59
~~es~~
|4.49
~~Gs~~
~~es~~
|6.25|7.98| |**U**
~~ee~~
~~ee~~
~~es~~
~~es~~|1.49
~~es~~
~~es Ps~~

|2.28
~~es~~
~~Ps~~

|3.96
~~es~~
~~(es~~

|5.55|7.15| |**F**
~~ee~~
~~es Re Gs~~
~~es~~
~~es~~|1.22
~~es Ps~~
~~Re Gs~~
|2.10
~~Ps ~~
~~Re Gs Gs~~
|3.57
~~(es~~
~~Gs~~
|5.00|6.46| |**W**
~~es Re Gs~~
~~es Re Gs~~
~~es~~
~~es~~|1.07
~~Re Gs~~
~~Re Gs~~
|1.88
~~Re Gs Gs~~
~~Re Gs Gs~~
|3.23
~~Gs~~
~~Gs~~
|4.50|5.87| |**G**
~~es Re Gs~~
~~es~~
~~es~~
~~ee~~|1.01
~~Re Gs~~
~~ee~~

|1.64
~~Re Gs Gs~~

|2.95
~~Gs~~
~~Gs~~
|4.12|5.40| |**X**
~~es~~
~~es Re Gs~~
~~ee~~
~~ee~~|0.96
~~ee~~
~~Re Gs~~
|1.50
~~Re Gs Gs~~
|2.74
~~Gs~~
~~Gs~~|3.80|4.98| |**K**
~~es Re Gs~~
~~ee Re Gs~~
~~ee~~
~~ee~~|0.92
~~Re Gs~~
~~Re Gs~~|1.41
~~Re Gs Gs~~
~~Re Gs~~|2.56
~~Gs~~
~~es~~|3.52|4.64| |**Y**
~~ee Re Gs~~
~~ee~~
~~ee~~
~~ee~~|0.88
~~Re Gs~~
~~es~~|1.34
~~Re Gs~~
~~es~~|2.39
~~es~~
~~es~~|3.25
~~es~~|4.32| |**Q**
~~ee~~
~~ee~~
~~ee~~
~~ee~~|0.86
~~es~~
~~es~~|1.29
~~es~~
~~es~~|2.24
~~es~~
~~es~~|3.04
~~es~~
~~es~~|4.06| |**Z or "-": Default**
~~ee~~
~~ee~~
~~ee~~
~~ee~~|0.82
~~es~~
~~es~~|1.24
~~es~~
~~es~~|2.07
~~es~~
~~es~~|2.89
~~es~~
~~es~~|3.82| |**M**
~~ee~~
~~ee~~
~~ee~~
~~ae~~|0.77
~~es~~
~~es~~|1.20
~~es~~
~~es~~|1.94
~~es~~
~~es es~~|2.72
~~es~~
~~es~~|3.61| |**N**
~~ee~~
~~ee~~
~~ae~~|0.66
~~es~~
~~es~~
~~es~~|1.15
~~es~~
~~es~~
~~es~~|1.84
~~es es~~
~~es~~
~~es~~|2.58
~~es~~
~~es~~|3.41| |**P**
~~ee~~
~~ae~~|0.51
~~es~~
~~es~~|1.09
~~es~~
~~es~~|1.76
~~es~~
~~es~~|2.45
~~es~~|3.24| **Table 1. Vdd = 1.8V Rise/Fall Times for Specific CLOAD** |**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~|**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~|**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~|**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~|**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~|**Rise/Fall Time Typ (ns)**
~~es~~~~**e**ses~~| |---|---|---|---|---|---| |**Drive Strength \ CLOAD**
~~es~~|**5 pF**
~~es~~
~~es~~
~~es~~|**15 pF**
~~es~~
~~**e**s~~
~~es~~|**30 pF**
~~es~~
~~es~~
~~es~~|**45 pF**
~~es~~|60 pF
~~es~~| |**L**
~~es~~
~~e~~|8.68
~~es~~
~~es~~
~~e~~
~~es~~
~~es~~|13.59
~~es~~
~~**e**s~~
~~e~~
~~es~~
~~es~~|18.36
~~es~~
~~es~~
~~es~~
~~es~~|32.70
~~es~~|42.06
~~es~~| |**A**
~~e~~
~~ee~~|4.42
~~es ~~
~~e~~
~~es~~
~~ee~~
~~es~~
~~es~~|7.18
~~**e**s ~~
~~e~~
~~es~~
~~ee~~
~~es~~
~~es~~|11.93
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~|16.60
~~ee~~
~~es~~|21.38
~~ee~~| |**R**
~~ee~~
~~ee~~|2.93
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~ee~~|4.78
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|8.15
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~|11.19
~~ee~~
~~ee~~
~~es~~|14.59
~~ee~~
~~ee~~| |**B**
~~ee~~
~~ee~~|2.21
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~ee~~
~~es~~|3.57
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|6.19
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~|8.55
~~ee~~
~~es~~
~~ee~~
~~es~~|11.04
~~ee~~
~~ee~~| |**S**
~~ee~~
~~ee~~|1.67
~~es ~~
~~ee~~
~~ee~~
~~ee~~
~~es~~
~~es~~|2.87
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~Gs~~|4.94
~~es ~~
~~ee~~
~~ee~~
~~es~~
~~es~~|6.85
~~es~~
~~ee~~
~~ee~~
~~es~~
~~Gs~~|8.80
~~ee~~
~~ee~~| |**D**
~~ee~~
~~ee~~|1.50
~~ee ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|2.33
~~es~~
~~ee~~
~~es~~
~~ee~~
~~Gs~~
~~Gs~~|4.11
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|5.68
~~ee~~
~~es~~
~~ee~~
~~Gs~~
~~Gs~~|7.33
~~ee~~
~~ee~~| |**T**
~~ee~~
~~ee~~|1.06
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|2.04
~~es ~~
~~ee~~
~~Gs~~
~~ee~~
~~Gs~~
~~es~~|3.50
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|4.84
~~es~~
~~ee~~
~~Gs~~
~~ee~~
~~Gs~~|6.26
~~ee~~
~~ee~~| |**E**
~~ee~~
~~ee~~|0.98
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~ee~~|1.69
~~Gs ~~
~~ee~~
~~Gs~~
~~ee~~
~~es~~
~~es~~|3.03
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~|4.20
~~Gs~~
~~ee~~
~~Gs~~
~~ee~~|5.51
~~ee~~
~~ee~~| |**U**
~~ee~~
~~ee~~|0.93
~~es~~
~~ee~~
~~es~~
~~ee~~
~~ee~~
~~es~~|1.48
~~Gs ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|2.69
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~|3.73
~~Gs~~
~~ee~~
~~ee~~
~~es~~|4.92
~~ee~~
~~ee~~| |**F**
~~ee~~
~~ee~~|0.90
~~es ~~
~~ee~~
~~ee~~
~~ee~~
~~es~~
~~es~~|1.37
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~Gs~~|2.44
~~es~~
~~ee~~
~~ee~~
~~es~~
~~es~~|3.34
~~ee~~
~~ee~~
~~es~~
~~Gs~~|4.42
~~ee~~
~~ee~~| |**W**
~~ee~~
~~ee~~|0.87
~~ee ~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~Ge~~|1.29
~~es~~
~~ee~~
~~es~~
~~ee~~
~~Gs~~
~~Gs~~|2.21
~~ee~~
~~es~~
~~ee~~
~~es~~
~~Ge~~|3.04
~~ee~~
~~es~~
~~ee~~
~~Gs~~
~~GO~~|4.02
~~ee~~
~~ee~~| |**G or "-": Default**
~~ee~~
~~es~~|0.67
~~es ~~
~~ee~~
~~es~~
~~es~~
~~Ge~~
~~en~~|1.20
~~es ~~
~~ee~~
~~Gs~~
~~es~~
~~Gs~~
~~Gs~~|2.00
~~es ~~
~~ee~~
~~es~~
~~es~~
~~Ge~~
~~Gs~~|2.79
~~es~~
~~ee~~
~~Gs~~
~~es~~
~~GO~~|3.69
~~ee~~
~~es~~| |**X**
~~es~~
~~es~~|0.44
~~es~~
~~es~~
~~Ge~~
~~es~~
~~en~~
~~ee~~|1.10
~~Gs ~~
~~es~~
~~Gs~~
~~es~~
~~Gs~~
~~Gs~~|1.86
~~es~~
~~es~~
~~Ge~~
~~es~~
~~Gs~~
~~Gs~~|2.56
~~Gs~~
~~es~~
~~GO~~
~~es~~|3.43
~~es~~
~~es~~| |**K**
~~es~~
~~ee~~|0.38
~~Ge ~~
~~es~~
~~en~~
~~ee~~
~~ee~~
~~en~~|0.99
~~Gs ~~
~~es~~
~~Gs~~
~~ee~~
~~Gs~~
~~Gs~~|1.76
~~Ge ~~
~~es~~
~~Gs~~
~~ee~~
~~Gs~~
~~Gs~~|2.37
~~GO~~
~~es~~
~~ee~~|3.18
~~es~~
~~ee~~| |**Y**
~~ee~~
~~es~~|0.36
~~en ~~
~~ee~~
~~ee~~
~~es~~
~~en~~
~~en~~|0.83
~~Gs~~
~~ee~~
~~Gs~~
~~es~~
~~Gs~~
~~Gs~~|1.66
~~Gs~~
~~ee~~
~~Gs~~
~~es~~
~~Gs~~
~~Gs~~|2.20
~~ee~~
~~es~~|2.98
~~ee~~
~~es~~| |**Q**
~~es~~
~~es~~|0.34
~~ee ~~
~~es~~
~~en~~
~~es~~
~~en~~
~~ee~~|0.71
~~Gs~~
~~es~~
~~Gs~~
~~es~~
~~Gs~~
~~es~~|1.58
~~Gs~~
~~es~~
~~Gs~~
~~es~~
~~Gs~~
~~es~~|2.07
~~es~~
~~es~~
~~es~~|2.80
~~es~~
~~es~~| |**Z**
~~es~~
~~ee~~|0.33
~~en ~~
~~es~~
~~en~~
~~ee~~
~~ee~~
~~es~~|0.65
~~Gs~~
~~es~~
~~Gs~~
~~ee~~
~~es~~
~~es~~|1.51
~~Gs~~
~~es~~
~~Gs~~
~~ee~~
~~es~~
~~es~~|1.95
~~es~~
~~ee~~
~~es~~
~~es~~|2.65
~~es~~
~~ee~~| |**M**
~~ee~~
~~ee~~|0.32
~~en ~~
~~ee~~
~~ee~~
~~ee~~
~~es~~
~~**e**s~~|0.62
~~Gs~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~**e**s~~|1.44
~~Gs~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~**es**~~|1.85
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|2.50
~~ee~~
~~ee~~| |**N**
~~ee~~
~~ee~~
~~a~~|0.31
~~ee ~~
~~ee~~
~~es~~
~~ee~~
~~**e**s~~
~~e~~|0.59
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~**e**s~~
~~e~~|1.37
~~es ~~
~~ee~~
~~es~~
~~ee~~
~~**es**~~|1.77
~~es~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~|2.39
~~ee~~
~~ee~~| |**P**
~~ee~~
~~a~~|0.30
~~es ~~
~~ee~~
~~**e**s~~
~~e~~|0.57
~~es ~~
~~ee~~
~~**e**s~~
~~e~~|1.29
~~es~~
~~ee~~
~~**es**~~|1.70
~~es~~
~~ee~~
~~es~~
~~es~~|2.28
~~ee~~| **Table 2. Vdd = 2.5V Rise/Fall Times for Specific CLOAD** |**Drive Strength \ CLOAD**
**5 pF**
**15 pF**
**L**
7.93
12.69
**A**
4.06
6.66
**R**
2.68
4.40
**B**
2.00
3.25
**S**
1.59
2.57
**D**
1.19
2.14
**T**
1.00
1.79
**E**
0.94
1.51
**U**
0.90
1.38
**F**
0.87
1.29
**W**
0.62
1.19
**G or "-": Default**
0.41
1.08
**X**
0.37
0.96
**K**
0.35
0.78
**Y**
0.33
0.67
**Q**
0.32
0.63
**Rise/Fall Time Typ **
~~es~~
~~ee~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es Ps ~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es Ps ~~
~~ee~~
~~es Ps ~~
~~es Re Gs~~
~~Se~~|**Drive Strength \ CLOAD**
**5 pF**
**15 pF**
**L**
7.93
12.69
**A**
4.06
6.66
**R**
2.68
4.40
**B**
2.00
3.25
**S**
1.59
2.57
**D**
1.19
2.14
**T**
1.00
1.79
**E**
0.94
1.51
**U**
0.90
1.38
**F**
0.87
1.29
**W**
0.62
1.19
**G or "-": Default**
0.41
1.08
**X**
0.37
0.96
**K**
0.35
0.78
**Y**
0.33
0.67
**Q**
0.32
0.63
**Rise/Fall Time Typ **
~~es~~
~~ee~~
~~ee~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es Ps ~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es~~
~~es~~
~~ee~~
~~es Ps ~~
~~ee~~
~~es Ps ~~
~~es Re Gs~~
~~Se~~|**30 pF**
**45 pF**
**60 pF**
17.94
30.10
38.89
11.04
15.31
19.80
7.53
10.29
13.37
5.66
7.84
10.11
4.54
6.27
8.07
3.76
5.21
6.72
3.20
4.43
5.77
2.78
3.84
5.06
2.48
3.40
4.50
2.21
3.03
4.05
1.99
2.76
3.68
1.84
2.52
3.36
1.72
2.33
3.15
1.63
2.15
2.92
1.54
2.00
2.75
1.46
1.89
2.57
**(ns)**
~~es~~
~~ee~~
~~es~~
~~es~~
~~es es~~
~~es~~
~~es~~
~~es~~
~~es~~
~~(es~~
~~es~~
~~es~~
~~es~~
~~es~~
~~es~~
~~es~~
~~(es~~
~~(es~~
~~——— ~~||**Drive Strength \ CLOAD**
**5 pF**
**15 pF**
**30 pF**
**45 pF**
**60 pF**
**L**
7.18
11.59
17.24
27.57
35.57
**A**
3.61
6.02
10.19
13.98
18.10
**R**
2.31
3.95
6.88
9.42
12.24
**B**
1.65
2.92
5.12
7.10
9.17
**S**
1.43
2.26
4.09
5.66
7.34
**D**
1.01
1.91
3.38
4.69
6.14
**T**
0.94
1.51
2.86
3.97
5.25
**E**
0.90
1.36
2.50
3.46
4.58
**U**
0.86
1.25
2.21
3.03
4.07
**F or "-": Default**
0.48
1.15
1.95
2.72
3.65
**W**
0.38
1.04
1.77
2.47
3.31
**G**
0.36
0.87
1.66
2.23
3.03
**X**
0.34
0.70
1.56
2.04
2.80
**K**
0.33
0.63
1.48
1.89
2.61
**Y**
0.32
0.60
1.40
1.79
2.43
**Q**
0.32
0.58
1.31
1.69
2.28
**Rise/Fall Time Typ (ns)**
~~es~~
~~Gn Gs~~
~~ee~~
~~ee Gs~~
~~es~~
~~Re GsGs~~
~~ee~~
~~ee Gs esee~~
~~ee~~
~~es es eses~~
~~ee~~
~~es es eses~~
~~ee~~
~~es~~~~**e**s es es~~
~~e~~
~~es es es~~
~~ee~~
~~ee es(es ns~~
~~ee~~
~~es es eses~~
~~ee~~
~~es~~~~**e**s es es~~
~~e~~
~~es es es~~
~~ee~~
~~es es es~~
~~ee~~
~~es es es~~
~~ee~~
~~es es es es~~
~~————~~| |---|---|---|---|---| |**Z**
0.31
0.60
1.39
1.80
2.43
**M**
0.30
0.57
1.31
1.72
2.30
~~——~~||||**Z**
0.30
0.56
1.22
1.62
2.17
**M**
0.30
0.55
1.12
1.54
2.07| |**N**
0.30
0.56||1.22
1.63
2.22||**N**
0.30
0.54
1.02
1.47
1.97| |**P**
0.29
0.54
~~a~~
~~es~~
~~ee~~||1.13
1.55
2.13
~~es~~
~~es~~||**P**
0.29
0.52
0.95
1.41
1.90
~~ee~~
~~ee~~
~~ee~~
~~es es~~| **Table 3. Vdd = 2.8V Rise/Fall Times for Specific CLOAD** **Table 4. Vdd = 3.3V Rise/Fall Times for Specific CLOAD** **Page 7 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Instant Samples with Time Machine and Field Programmable Oscillators** SiTime supports a field programmable version of the SiT8208 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT8208 package sizes and can be configured to one’s exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. For more information regarding SiTime’s field programmable solutions, visit http://www.sitime.com/time-machine and http://www.sitime.com/fp-devices. SiT8208 is typically factory-programmed per customer ordering codes for volume delivery. ## **Customizable Features of the SiT8208 FP Devices Include** - Any frequency between 1 – 110 MHz - Three frequency stability options, ±20 PPM, ±25 PPM, ±50 PPM - Two operating temperatures, -20 to 70°C or -40 to 85°C - Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and 3.3V - Output drive strength **Page 8 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  ~~Cs~~ The Smart Timing Choice   The Smart Timing Choice  The Smart Timing Choice ## **Dimensions and Patterns** **==> picture [449 x 606] intentionally omitted <==** **----- Start of picture text -----**
Package Size – Dimensions (Unit: mm) [[9]] Recommended Land Pattern (Unit: mm) [[10]]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
1.9
2.7 ± 0.05 1 .00
YXXXX
0.85
i 0.75 ± 0.05 |
1.1
3.2 x 2.5 x 0.75 mm
2 . 2
3.2 ± 0.05 2.1
#4 #3 #3 #4
an t ao
YXXXX
#1 #2 #2 #1
a Wt
0.9
1.4
Fee | a e
a an
5.0 x 3.2 x 0.75 mm
2 . 54
5.0 ± 0.05 2. 39
#4 #3 #3 #4
oe -
YXXXX
e #1 #2 e #2 #1 e
1.15 1 .5
CT a
7.0 x 5.0 x 0.90 mm
7.0 ± 0.05 5. 08
5 . 08
=, eS f
YXXXX
os
1.4
aes “4
2.2
—— —
Notes:
0.50
1.25
2.4 ± 0.05
1.5
1.0
0.05 2.5 ± 0.9 9 1.
0.7 2
1.
0.75 ± 0.05
0.8
0.05 2
3.2 ± 1.1 2.
1.6
0.75 ± 0.05
0.05
2.6
5.0 ± 81
3.
1.1
0
2.
0.90 ± 0.10
**----- End of picture text -----**
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 10. A capacitor of value 0.1 µF between Vdd and GND is recommended. **Page 9 of 10** **Rev. 1.02** **www.sitime.com** **SiT8208 Ultra Performance Oscillator**  The Smart Timing Choice  The Smart Timing Choice ## **Ordering Information** **The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator.** **==> picture [304 x 271] intentionally omitted <==** **----- Start of picture text -----**
SiT8208AC -23-25E -7 5 .12 3 4 56 T
Packaging
Part Family “T”: Tape & Reel, 3K reel
“SiT8208” “Y”: Tape & Reel, 1K reel
Blank for Bulk
Revision Letter
Frequency
“A” is the silicon revision 1.000000 to 80.000000 MHz
Temperature Range Feature Pin
“E” for Output Enable
“C” Ext. Commercial, -20 to 70ºC
“S” for Standby
“I” Industrial, -40 to 85ºC
Voltage Supply
Output Drive Strength
“18” for 1.8V ±5%
“–” Default (datasheet limits) “25” for 2.5V ±10%
See Tables 1 to 5 for rise/fall
“28” for 2.8V ±10%
times
“33” for 3.3V ±10%
“L” “S” “U” “X” “Z”
“A” “D” “F” “K” “M”
“R” “T” “W” “Y” “N” Frequency Tolerance
“B” “E” “G” “Q” “P”
“F” for ±10 PPM
“1” for ±20 PPM
Package “2” for ±25 PPM
“G” 2.5 x 2.0 “3” for ±50 PPM
“2” 3.2 x 2.5
“3” 5.0 x 3.2
“8” 7.0 x 5.0
**----- End of picture text -----**
|**Document**
~~ee~~|**Description**
~~ee~~|**Download Link**
~~ee~~| |---|---|---| |**Time Machine II**
~~ee~~|MEMS oscillator programmer
~~ee~~|http://www.sitime.com/support/time-machine-oscillator-programmer
~~ee~~| |**Field Programmable**
**Oscillators**
~~ee~~|Devices that can be programmable in the field by
Time Machine II
~~ee~~|http://www.sitime.com/products/field-programmable-oscillators
~~ee~~| |**Manufacturing Notes**
~~ee~~|Tape & Reel dimension, reflow profile and other manufacturing
related info
~~ee~~|http://www.sitime.com/component/docman/doc_download/85-manu
facturing-notes-for-sitime-oscillators
~~ee~~| |**Qualification Reports**
~~ee~~|RoHS report, reliability reports, composition reports
~~ee~~|http://www.sitime.com/support/quality-and-reliability
~~ee~~| |**Performance Reports**
~~ee~~|Additional performance data such as phase noise, current
consumption and jitter for selected frequencies
~~ee~~|http://www.sitime.com/support/performance-measurement-report
~~ee~~| |**Termination Techniques**
~~ee~~|Termination design recommendations
~~ee~~|http://www.sitime.com/support/application-notes
~~ee~~| |**Layout Techniques**
~~ee~~|Layout recommendations
~~ee~~|http://www.sitime.com/support/application-notes
~~ee~~| **Disclaimer:** SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. ## CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. **Page 10 of 10** **Rev. 1.02** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Supplemental Information** The Supplemental Information section is not part of the datasheet and is for informational purposes only. **SiTime Corporation** **Sunnyvale, CA 94085** **(408) 328-4400** **990 Almanor Avenue** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** **SiTime Corporation 990 Almanor Avenue Silicon MEMS Outperforms Quartz Rev. 1.0** **Sunnyvale, CA 94085** **(408) 328-4400** **www.sitime.com Revised January 16, 2013**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** ## **Best Reliability** Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. ## **Why is SiTime Best in Class:** - SiTime’s MEMS resonators are vacuum sealed using an advanced Epi-Seal™ process, which eliminates foreign particles and improves long term aging and reliability ## **Best Electro Magnetic Susceptibility (EMS)** SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. ## **Why is SiTime Best in Class:** - Internal differential architecture for best common mode noise rejection - Electrostatically driven MEMS resonator is more immune to EMS - World-class MEMS and CMOS design expertise **==> picture [223 x 145] intentionally omitted <==** **----- Start of picture text -----**
Mean Time Between Failure (Million Hours)
SiTime 500
IDT (Fox) 38
SiTime
20X Better
Epson 28
TXC 16
Pericom 14
0 200 400 600
**----- End of picture text -----**
**Figure 1. Reliability Comparison[[1]]** **==> picture [214 x 151] intentionally omitted <==** **----- Start of picture text -----**
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
- 30
- 39 - 40
- 40 - 42 - 43 - 45
- 50
- 60 SiTime
54X Better
- 70 - 73
- 80
- 90
Kyocera Epson TXC CW SiLabs SiTime
Average Spurs (dB)
**----- End of picture text -----**
**Figure 3. Electro Magnetic Susceptibility (EMS)[[3]]** ## **Best Aging** Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. ## **Best Power Supply Noise Rejection** SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. ## **Why is SiTime Best in Class:** ## **Why is SiTime Best in Class:** - SiTime’s MEMS resonators are vacuum sealed using an advanced Epi-Seal™ process, which eliminates foreign particles and improves long term aging and reliability - On-chip regulators and internal differential architecture for common mode noise rejection - Best analog CMOS design expertise - Inherently better immunity of electrostatically driven MEMS resonator **==> picture [191 x 148] intentionally omitted <==** **----- Start of picture text -----**
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
10
8.0
8
SiTime
6 2X Better
4 3.5
3.0
2 1.5
0
1-Year 10-Year
Aging (±PPM)
**----- End of picture text -----**
**Figure 2. Aging Comparison[[2]]** **==> picture [220 x 151] intentionally omitted <==** **----- Start of picture text -----**
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
5.0
4.0
3.0
2.0
SiTimeSiTime
1.0 3X Better
0.0
10 100 1,000 10,000
Power Supply Noise Frequency (kHz)
Injected Noise (ps/mv)
Additive Integrated Phase Jitter per mVp-p
**----- End of picture text -----**
**Figure 4. Power Supply Noise Rejection[[4]]** **Silicon MEMS Outperforms Quartz Rev. 1.0** **www.sitime.com**  The Smart Timing Choice  The Smart Timing Choice ## **Silicon MEMS Outperforms Quartz** ## **Best Vibration Robustness** High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. ## **Why is SiTime Best in Class:** - The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz - Center-anchored MEMS resonator is the most robust design ## **Best Shock Robustness** SiTime’s oscillators can withstand at least 50,000 _g_ shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. ## **Why is SiTime Best in Class:** - The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz - Center-anchored MEMS resonator is the most robust design **==> picture [473 x 413] intentionally omitted <==** **----- Start of picture text -----**
Vibration Sensitivity vs. Frequency 16 Differential XO Shock Robustness - 500 g
SiTime TXC Epson Connor Winfield Kyocera SiLabs
14.3
100.00 14
12.6
12
10.00 10
8
SiTime
6
1.00 SiTime 3.9 Up to 25x Better
Up to 30x 4
Better 2.9 2.5
2
0.6
0.10
=S 0 -_
10 100 1000
Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime
Figure 5. Vibration Robustness [[5]] Figure 6. Shock Robustness [[6]]
Data Source: Reliability documents of named companies.
Data source: SiTime and quartz oscillator devices datasheets.
Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
Vibration Sensitivity (ppb/g)
Peak Frequency Deviation (PPM)
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## **Notes:** 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): 4. 50 mV pk-pk Sinusoidal voltage. 5. **Devices used in this test:** same as EMS test stated in Note 3. 6. Test conditions for shock test: - MIL-STD-883F Method 2002 - Condition A: half sine wave shock pulse, 500-g, 1ms - Continuous frequency measurement in 100 μs gate time for 10 seconds - **Devices used in this test:** same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. **Silicon MEMS Outperforms Quartz Rev. 1.0** **www.sitime.com** ## **Document Feedback Form**  The Smart Timing Choice  The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. **==> picture [506 x 528] intentionally omitted <==** **----- Start of picture text -----**
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